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    MBE process for preparing oxide superconducting films
    61.
    发明授权
    MBE process for preparing oxide superconducting films 失效
    制备氧化物超导薄膜的MBE工艺

    公开(公告)号：US5350737A

    公开(公告)日：1994-09-27

    申请号：US946735

    申请日：1992-08-28

    申请人： Keizo Harada ,  Hideo Itozaki ,  Shuji Yazu

    发明人： Keizo Harada ,  Hideo Itozaki ,  Shuji Yazu

    IPC分类号： H01L39/24 ,  B05D3/06 ,  B05D5/12

    CPC分类号： H01L39/2432 ,  Y10S505/729 ,  Y10S505/73 ,  Y10S505/786 ,  Y10S505/819

    摘要： In a process for preparing a thin film of oxide superconductor having a layered crystal structure by depositing each layer of said layered crystal structure on a substrate by Molecular Beam Epitaxy (MBE) method with introducing oxygen-containing gas which is excited by irradiation of microwave, improvement in that a film-forming operation by the MBE method is interrupted temporarily after predetermined numbers of constituent layers which correspond to one unit crystal or less than one unit crystal are layered so that the deposited constituent layers are left in an activated oxygen atmosphere to effect a crystallization promotive operation, before the next film-forming operation is restarted.

    摘要翻译： 在通过分子束外延（MBE）方法将各层所述层状晶体结构沉积在基板上的介质中制备具有层状晶体结构的氧化物超导体薄膜的方法中，通过引入通过微波照射激发的含氧气体， 改进之处在于，通过MBE方法的成膜操作在对应于一个单位晶体或少于一个单位晶体的预定数量的构成层之后暂时中断，使得沉积的构成层留在活性氧气氛中以实现 在重新开始下一次成膜操作之前的结晶促进操作。

    Method for forming electrode for electrical connections to oxide super-conductor
    62.
    发明授权
    Method for forming electrode for electrical connections to oxide super-conductor 失效
    用于形成电连接到氧化物超导体的电极的方法

    公开(公告)号：US5240905A

    公开(公告)日：1993-08-31

    申请号：US827185

    申请日：1992-01-28

    申请人： Saburo Tanaka ,  Hideo Itozaki ,  Shuji Yazu

    发明人： Saburo Tanaka ,  Hideo Itozaki ,  Shuji Yazu

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2474 ,  H01L2924/0002 ,  Y10S428/93 ,  Y10S505/701 ,  Y10T428/12611 ,  Y10T428/12889 ,  Y10T428/12896

    摘要： A metal electrode formed on an oxide superconductor for electric connection to the oxide superconductor, includes a first layer of Ag in direct contact with the oxide superconductor, and a second layer formed on the first layer. The second layer is formed of noble metal excluding Ag. The metal electrode can be formed by forming a first layer of Ag to cover a whole surface of the oxide superconductor layer, and forming a second layer of noble metal excluding Ag, to cover a whole surface of the first layer, thereby to form a double metal layer, and patterning the double metal layer so as to form a metal electrode composed of the double metal layer.

    摘要翻译： 形成在与氧化物超导体电连接的氧化物超导体上的金属电极包括与氧化物超导体直接接触的第一Ag层，以及形成在第一层上的第二层。 第二层由不含Ag的贵金属形成。 金属电极可以通过形成第一层Ag以覆盖氧化物超导体层的整个表面，并且形成除Ag之外的第二层贵金属以覆盖第一层的整个表面，从而形成双重的 金属层，图案化双金属层，形成由双金属层构成的金属电极。

    Process and system for preparing a superconducting thin film of oxide
    63.
    发明授权
    Process and system for preparing a superconducting thin film of oxide 失效
    用于制备氧化物超薄膜的方法和系统

    公开(公告)号：US5143896A

    公开(公告)日：1992-09-01

    申请号：US604896

    申请日：1990-10-31

    申请人： Keizo Harada ,  Hideo Itozaki ,  Shuji Yazu

    发明人： Keizo Harada ,  Hideo Itozaki ,  Shuji Yazu

    IPC分类号： H01L39/24

    CPC分类号： H01L39/2432 ,  Y10S505/729 ,  Y10S505/73 ,  Y10S505/786 ,  Y10S505/819

    摘要： In a process for preparing a thin film of oxide superconductor having a layered crystal structure by depositing each layer of said layered crystal structure on a substrate by Molecular Beam Epitaxy (MBE) method with introducing oxygen-containing gas which is exited by irradiation of microwave, improvement in that a film-forming operation by the MBE method is interrupted temporally after predetermined numbers of constituent layers which correspond to one unit crystal or less than one unit crystal are layered so that the deposited constituent layers are left in an activated oxygen atmosphere to effect a crystallization promotive operation, before next film-forming operation is restarted.

    Method of synthesizing diamond
    66.
    发明授权
    Method of synthesizing diamond 失效
    金刚石合成方法

    公开(公告)号：US4632817A

    公开(公告)日：1986-12-30

    申请号：US717074

    申请日：1985-03-28

    申请人： Shuji Yazu ,  Kazuo Tsuji ,  Akito Yoshida

    发明人： Shuji Yazu ,  Kazuo Tsuji ,  Akito Yoshida

    IPC分类号： B01J3/06 ,  C01B31/06

    CPC分类号： B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  B01J2203/0685

    摘要： A diamond synthesizing method carried out under diamond-stable superhigh pressure and temperature by employing a synthesizing vessel (10) having a plurality of synthesizing chambers (10a, 10b) divided by a partition layer (16) in the vertical direction. Solvent metals (13a, 13b) respectively placed in the upwardly arranged synthesizing chamber (10a) and the downwardly arranged synthesizing chamber (10b) are prepared so that the solvent metals are different in eutectic temperature with carbon from each other. In the respective synthesizing chambers (10a, 10b), carbon sources (12a, 12b) are placed in contact with highest-temperature portions of the respective solvent metals (13a, 13b) and seed crystals (11a, 11b) are placed in contact with lowest-temperature portions thereof. The synthesizing vessel (10) is provided with a temperature gradient in such directivity that the upper part thereof is at a higher temperature and the lower part is at a lower temperature.

    摘要翻译： 一种在金刚石稳定的超高压和高温下进行的金刚石合成方法，该方法是在垂直方向上使用具有由分隔层（16）分割的多个合成室（10a，10b）的合成容器（10）。 制备分别放置在向上排列的合成室（10a）和向下排列的合成室（10b）中的溶剂金属（13a，13b），使得溶剂金属在共晶温度下与碳彼此不同。 在各合成室（10a，10b）中，碳源（12a，12b）与各溶剂金属（13a，13b）的最高温度部分接触放置，晶种（11a，11b）与 其最低温度部分。 合成容器（10）具有这样的方向性的温度梯度，使得其上部处于较高温度，下部处于较低温度。

    Diamond sintered compact wherein crystal particles are uniformly orientated in the particular direction and the method for producing the same
    67.
    发明授权
    Diamond sintered compact wherein crystal particles are uniformly orientated in the particular direction and the method for producing the same 失效
    其中晶体颗粒沿特定方向均匀取向的金刚石烧结体及其制造方法

    公开(公告)号：US4425315A

    公开(公告)日：1984-01-10

    申请号：US352248

    申请日：1982-02-25

    申请人： Kazuo Tsuji ,  Shuji Yazu ,  Akio Hara

    发明人： Kazuo Tsuji ,  Shuji Yazu ,  Akio Hara

    IPC分类号： B01J3/06 ,  H01L21/48 ,  C01B31/06

    CPC分类号： B01J3/062 ,  H01L21/4803 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  Y10T428/2982 ,  Y10T428/30

    摘要： The invention relates to a diamond sintered compact wherein diamond crystal particles are uniformly orientated in a particular direction and the method for producing the same, and has for an object to provide a diamond sintered compact having a high thermal conductivity particularly suitable for heat sink for use in the field of electronics.According to the invention, graphite is used as carbonaceous raw material, diamond crystal particles having such elongated shape that the ratio of the length of the long axis to that of the short axis is more than 2 being synthesized in such state that the greater part of the crystal particles have their long axes uniformly oriented in a particular direction, the crystal particles being sintered in the direction of the long axes thereof so that transformation of the graphite into diamond and sintering thereof may be accomplished synchronously. The invention has for an object to obtain a diamond sintered compact suitable for the aforesaid use by degassing reaction system raw material plugged into an air permeable container by heating it in vacuum in order to intercept gaseous components causing a decrease of thermal conductivity at the time of synthesizing diamond from carbonaceous material and a catalytic metal and sintering thereof, subsequently the air permeable part of the said container being sealed by means of soldering material preliminarily placed in contact with the said container.

    摘要翻译： 本发明涉及金刚石烧结体，其中金刚石晶体颗粒在特定方向上均匀取向，并且其制造方法的目的是提供一种具有高热导率的金刚石烧结体，特别适用于散热器 在电子领域。 根据本发明，石墨用作碳质原料，具有这样细长形状的金刚石晶体颗粒，使得长轴与短轴的长度的比例大于2被合成为使得大部分 晶体颗粒具有沿特定方向均匀取向的长轴，晶体颗粒沿其长轴方向烧结，从而可以同时完成石墨转化为金刚石和烧结。 本发明的目的是获得一种适用于上述用途的金刚石烧结体，其通过在真空中加热而将插入到透气性容器中的反应系统原料脱气，以截留导致在 从碳质材料和催化金属合成金刚石并将其烧结，随后所述容器的透气部分通过预先与所述容器接触的焊料密封。

    Diamond sintered body and the method for producing the same
    68.
    发明授权
    Diamond sintered body and the method for producing the same 失效
    金刚石烧结体及其制造方法

    公开(公告)号：US4303442A

    公开(公告)日：1981-12-01

    申请号：US69575

    申请日：1979-08-24

    申请人： Akio Hara ,  Shuji Yazu

    发明人： Akio Hara ,  Shuji Yazu

    IPC分类号： B01J3/06 ,  B23P5/00 ,  C03B33/10 ,  C22C26/00

    CPC分类号： C03B33/105 ,  B01J3/062 ,  B23P5/00 ,  C22C26/00 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  C22C2026/005

    摘要： The invention relates to a diamond sintered body having a high wear resistance and making it possible to obtain a processed surface of high dimensional precision and beautiful finish as a wear resisting tool blank for use particularly in a wire drawing die, shaving die and the like, as a tool blank for use in a cutting tool for a workpiece consisting of nonferrous metals, plastics, ceramic, etc., and as a cutting tool blank for use in a glass cutter, synthetic building material cutting blade, etc., and method for producing the same, wherein a mixture comprising a diamond powder below 1.mu. and a powder below 1.mu. of one or more than two kinds of carbides, nitrides and borides of IVa, Va and VIa group metals of the periodic table, and further a powder of iron group metals is placed between a plurality of cemented carbide plates and then subjected to hot press sintering at a high temperature and high pressure under which diamond is stable thereby enabling to obtain a diamond sintered body having high properties suitable for the aforesaid uses.

    摘要翻译： 本发明涉及一种具有高耐磨性的金刚石烧结体，并且可以获得高尺寸精度和美观的加工表面作为特别用于拉丝模，剃须刀等的耐磨工具坯料， 作为用于由有色金属，塑料，陶瓷等组成的工件的切削工具中使用的工具坯料，以及用于玻璃切割机，合成建筑材料切割刀片等的切削工具坯料，以及用于 制备其中的方法，其中将包含低于1微米的金刚石粉末和低于1微米的粉末的元素周期表中的IVa，Va和VIa族金属的一种或多于两种的一种或多于两种的碳化物，氮化物和硼化物的混合物， 的铁族金属放置在多个硬质合金板之间，然后在高温高压下进行热压烧结，金刚石稳定，由此能够获得金刚石烧结体 具有适用于上述用途的高性能。

    Tunnel junction type josephson device
    69.
    发明授权
    Tunnel junction type josephson device 失效
    隧道结型约瑟夫森装置

    公开(公告)号：US6157044A

    公开(公告)日：2000-12-05

    申请号：US029361

    申请日：1993-03-10

    申请人： Hidenori Nakanishi ,  Saburo Tanaka ,  Hideo Itozaki ,  Shuji Yazu

    发明人： Hidenori Nakanishi ,  Saburo Tanaka ,  Hideo Itozaki ,  Shuji Yazu

    IPC分类号： H01L39/22 ,  H01L39/24 ,  H01L29/06 ,  H01L39/00

    CPC分类号： H01L39/225

    摘要： A tunnel junction type Josephson device includes a pair of superconductor layers formed of a compound oxide superconductor material and an insulator layer formed between the pair of superconductor layers. The insulator layer is formed of a compound oxide which is composed of the same constituent elements as those of the compound oxide superconductor material of the superconductor layers but with an atomic ratio which does not present a superconductivity characteristics. In addition, the superconductor layers and the insulator layer are continuously formed while supplying oxygen.

    摘要翻译： 隧道结型约瑟夫逊装置包括由复合氧化物超导体材料形成的一对超导体层和形成在该对超导体层之间的绝缘体层。 绝缘体层由复合氧化物形成，该复合氧化物由与超导体层的复合氧化物超导体材料相同的构成元素构成，但是具有不具有超导特性的原子比。 此外，超导体层和绝缘体层在供给氧的同时连续地形成。