公开(公告)号：US10453598B2

公开(公告)日：2019-10-22

申请号：US16020373

申请日：2018-06-27

Applicant: TDK CORPORATION

Inventor： Kazuumi Inubushi ,  Katsuyuki Nakada ,  Tomoyuki Sasaki

IPC: G11B5/39 ,  H01F10/32 ,  H01L43/02 ,  H03H11/04 ,  G01R33/09 ,  H03B15/00 ,  H01L43/10 ,  H01L43/08 ,  H03H2/00

Abstract: There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe2TiSi.

公开(公告)号：US10355201B2

公开(公告)日：2019-07-16

申请号：US15993712

申请日：2018-05-31

Applicant: TDK CORPORATION

Inventor： Eiji Suzuki ,  Katsuyuki Nakada ,  Shogo Yonemura

IPC: H01L43/08 ,  H01F10/32 ,  H01L43/10

Abstract: A laminated structure according to an embodiment includes: a ferromagnetic layer; and a multiferroic layer formed on one surface of the ferromagnetic layer, wherein the multiferroic layer includes a first region having a tetragonal crystal located on a surface side on the ferromagnetic layer side and a second region having a rhombohedral crystal located further inside than the first region.

公开(公告)号：US10319904B2

公开(公告)日：2019-06-11

申请号：US15556261

申请日：2016-03-29

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Katsuyuki Nakada ,  Tatsuo Shibata

IPC: H01L43/10 ,  G01R33/09 ,  G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L27/105 ,  H01L29/82 ,  G11B5/39

Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn2Ox (0

公开(公告)号：US10243139B2

公开(公告)日：2019-03-26

申请号：US16003524

申请日：2018-06-08

Applicant: TDK CORPORATION

Inventor： Kazuumi Inubushi ,  Katsuyuki Nakada

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic metal layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. The first ferromagnetic layer and the second ferromagnetic layer include a Heusler alloy consisting of a CoMnSi alloy. A ratio x of Mn with respect to Co2 in each of the first ferromagnetic layer and the second ferromagnetic layer is 0.7≤x≤1.7. Compositions of the first ferromagnetic layer and the second ferromagnetic layer are different from each other.

公开(公告)号：US09362038B2

公开(公告)日：2016-06-07

申请号：US14613852

申请日：2015-02-04

Applicant: TDK CORPORATION

Inventor： Katsuyuki Nakada ,  Takahiro Suwa ,  Kuniyasu Ito ,  Takumi Aoki ,  Tetsuya Shibata

IPC: G11B5/127 ,  H01F10/32 ,  H01F3/10 ,  H01F7/20 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01F10/3268 ,  G11B5/127 ,  G11C11/161 ,  H01F3/10 ,  H01F7/20 ,  H01L43/08

Abstract: A magnetic element including a magnetoresistive effect film (MEF). Magnetic element includes an MEF and nonmagnetic spacer layer, first and second ferromagnetic layers, wherein layers being disposed with nonmagnetic spacer layer interposed therebetween, pair of electrodes disposed with MEF interposed therebetween in stacking direction of MEF at least two first soft magnetic layers, coil, and second soft magnetic layer magnetically connected to coil, wherein second soft magnetic layer has ring-like shape, spacing distance between second soft magnetic layer and MEF is larger than first soft magnetic layer and MEF, film thickness of second soft magnetic layer is larger than first soft magnetic layer, part of the two first soft magnetic layers overlaps a part of second soft magnetic layer in stacking direction of MEF, first and second soft magnetic layers are magnetically coupled to each other, and MEF is disposed between respective fore ends of two first soft magnetic layers.

Abstract translation: 包括磁阻效应膜（MEF）的磁性元件。 磁性元件包括MEF和非磁性间隔层，第一和第二铁磁层，其中设置有介于其间的非磁性间隔层的层间设置有MEF的一对电极，MEF的堆叠方向在MEF的堆叠方向上至少两个第一软磁性层，线圈， 和第二软磁层磁性地连接到线圈，其中第二软磁层具有环形形状，第二软磁层与MEF之间的间隔距离大于第一软磁层和MEF，第二软磁层的膜厚度大于 第一软磁层，两个第一软磁层的一部分在MEF的堆叠方向上与第二软磁层的一部分重叠，第一和第二软磁层彼此磁耦合，并且MEF设置在两个的相应前端之间 第一软磁层。

公开(公告)号：US09153771B2

公开(公告)日：2015-10-06

申请号：US14282428

申请日：2014-05-20

Applicant: TDK CORPORATION

Inventor： Katsuyuki Nakada ,  Takahiro Suwa ,  Kuniyasu Ito ,  Masato Takahashi

IPC: G11B5/39 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3922 ,  G11B5/3932 ,  G11B5/3941 ,  G11B2005/3996 ,  H01L43/08

Abstract: A magnetoresistive effect element includes a pair of first soft magnetic layers that are arranged opposite to each other so as to sandwich a magnetoresistive effect film; a second soft magnetic layer; and a coil that is windingly formed about the second soft magnetic layer. When a rear end region cross-sectional area of the first soft magnetic layers is defined as S1r and a tip end region cross-sectional area of the second soft magnetic layer is defined as S2f, S2f>S1r is established, and when a tip end width of the first soft magnetic layers is defined as W1f and a rear end width of the first soft magnetic layers is defined as W1r, W1r>W1f is established.

Abstract translation: 磁阻效应元件包括彼此相对布置以便夹着磁阻效应膜的一对第一软磁性层; 第二软磁层; 以及围绕第二软磁层卷绕形成的线圈。 当第一软磁性层的后端区域横截面积被定义为S1r，将第二软磁性层的前端区域横截面积定义为S2f时，建立S2f> S1r，并且当尖端 将第一软磁性层的宽度定义为W1f，将第一软磁性层的后端宽度定义为W1r，建立W1r> W1f。