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公开(公告)号：US12072642B2
公开(公告)日：2024-08-27
申请号：US17827252
申请日：2022-05-27
Applicant: TDK CORPORATION
Inventor： Kuniyasu Ito , Tsuyoshi Komaki , Hideaki Fukuzawa
CPC classification number: G03G15/0409 , G02B6/0068 , G02B6/0078 , G03G15/04072
Abstract: A integrated light source module includes a planar optical waveguides layer having N light incident ports aligned with respect to each other, M light exit ports aligned with respect to each other, and optical waveguides connected to the N light incident ports and the M light exit ports, and N optical semiconductor devices facing each of the N light incident ports arranged so that light emitted from each of the N optical semiconductor devices can be incident on each of the N light incident ports, wherein light emitted from the M light exit ports can be applied to an object to be irradiated.
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Patent Agency Ranking
公开(公告)号：US09362038B2
公开(公告)日：2016-06-07
申请号：US14613852
申请日：2015-02-04
Applicant: TDK CORPORATION
Inventor： Katsuyuki Nakada , Takahiro Suwa , Kuniyasu Ito , Takumi Aoki , Tetsuya Shibata
CPC classification number: H01F10/3268 , G11B5/127 , G11C11/161 , H01F3/10 , H01F7/20 , H01L43/08
Abstract: A magnetic element including a magnetoresistive effect film (MEF). Magnetic element includes an MEF and nonmagnetic spacer layer, first and second ferromagnetic layers, wherein layers being disposed with nonmagnetic spacer layer interposed therebetween, pair of electrodes disposed with MEF interposed therebetween in stacking direction of MEF at least two first soft magnetic layers, coil, and second soft magnetic layer magnetically connected to coil, wherein second soft magnetic layer has ring-like shape, spacing distance between second soft magnetic layer and MEF is larger than first soft magnetic layer and MEF, film thickness of second soft magnetic layer is larger than first soft magnetic layer, part of the two first soft magnetic layers overlaps a part of second soft magnetic layer in stacking direction of MEF, first and second soft magnetic layers are magnetically coupled to each other, and MEF is disposed between respective fore ends of two first soft magnetic layers.
Abstract translation: 包括磁阻效应膜（MEF）的磁性元件。 磁性元件包括MEF和非磁性间隔层，第一和第二铁磁层，其中设置有介于其间的非磁性间隔层的层间设置有MEF的一对电极，MEF的堆叠方向在MEF的堆叠方向上至少两个第一软磁性层，线圈， 和第二软磁层磁性地连接到线圈，其中第二软磁层具有环形形状，第二软磁层与MEF之间的间隔距离大于第一软磁层和MEF，第二软磁层的膜厚度大于 第一软磁层，两个第一软磁层的一部分在MEF的堆叠方向上与第二软磁层的一部分重叠，第一和第二软磁层彼此磁耦合，并且MEF设置在两个的相应前端之间 第一软磁层。
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3.发明授权Thin film magnetic element having a pair of first soft magnetic layers sandwiching a magnetoresistive effect film and a coil windingly formed about a second soft magnetic layer 有权具有夹着磁阻效应膜的一对第一软磁性层和围绕第二软磁性层卷绕形成的线圈的薄膜磁性元件公开(公告)号：US09153771B2
公开(公告)日：2015-10-06
申请号：US14282428
申请日：2014-05-20
Applicant: TDK CORPORATION
Inventor： Katsuyuki Nakada , Takahiro Suwa , Kuniyasu Ito , Masato Takahashi
CPC classification number: H01L43/02 , G11B5/3906 , G11B5/3909 , G11B5/3922 , G11B5/3932 , G11B5/3941 , G11B2005/3996 , H01L43/08
Abstract: A magnetoresistive effect element includes a pair of first soft magnetic layers that are arranged opposite to each other so as to sandwich a magnetoresistive effect film; a second soft magnetic layer; and a coil that is windingly formed about the second soft magnetic layer. When a rear end region cross-sectional area of the first soft magnetic layers is defined as S1r and a tip end region cross-sectional area of the second soft magnetic layer is defined as S2f, S2f>S1r is established, and when a tip end width of the first soft magnetic layers is defined as W1f and a rear end width of the first soft magnetic layers is defined as W1r, W1r>W1f is established.
Abstract translation: 磁阻效应元件包括彼此相对布置以便夹着磁阻效应膜的一对第一软磁性层; 第二软磁层; 以及围绕第二软磁层卷绕形成的线圈。 当第一软磁性层的后端区域横截面积被定义为S1r，将第二软磁性层的前端区域横截面积定义为S2f时，建立S2f> S1r，并且当尖端 将第一软磁性层的宽度定义为W1f，将第一软磁性层的后端宽度定义为W1r，建立W1r> W1f。
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公开(公告)号：US12001811B2
公开(公告)日：2024-06-04
申请号：US17281021
申请日：2018-10-11
Applicant: TDK CORPORATION
Inventor： Kuniyasu Ito , Tatsuo Shibata
CPC classification number: G06F7/5443 , G06G7/16 , G06N3/065
Abstract: A multiply-accumulate calculation device includes: multiple calculation units which generates output signals by multiplying an input signal corresponding to an input value and having a rising part, a signal part, and a falling part by a weight, and output the output signals; an accumulate calculation unit configured to calculate a sum of the output signals output from the plurality of multiple calculation units; and a correction unit configured to execute correction processing for correcting the sum of the output signals on the basis of a correction value including at least one of a first value incorporated into the sum by a current flowing into variable resistors of the multiple calculation units due to the rising part of the input signal, and a second value incorporated into the sum by a current flowing into the variable resistors of the multiple calculation units due to the falling part of the input signal.
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公开(公告)号：US11469370B2
公开(公告)日：2022-10-11
申请号：US16760169
申请日：2019-01-09
Applicant: TDK CORPORATION
Inventor： Kuniyasu Ito , Tatsuo Shibata
Abstract: A magnetic domain wall movement type magnetic recording element includes: a first ferromagnetic layer which includes a ferromagnetic body; a non-magnetic layer which faces the first ferromagnetic layer; and a magnetic recording layer which faces a surface of the non-magnetic layer on a side opposite to the first ferromagnetic layer and extends in a first direction. The magnetic recording layer has a concave-convex structure on a second surface opposite to a first surface which faces the non-magnetic layer.
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公开(公告)号：US09017831B2
公开(公告)日：2015-04-28
申请号：US13779048
申请日：2013-02-27
Applicant: TDK Corporation
Inventor： Katsuyuki Nakada , Takahiro Suwa , Kuniyasu Ito , Yuji Kakinuma , Masato Takahashi
CPC classification number: H01F1/0036 , G01R33/091 , G01R33/093 , G11B5/3903 , G11C11/16 , G11C11/161 , H01F10/3268 , H01F10/3286 , H01F10/3295 , Y10T428/1107 , Y10T428/1121
Abstract: A thin-film magnetic oscillation element includes a pinned magnetic layer, a free magnetic layer, a nonmagnetic spacer layer provided between the pinned magnetic layer and the free magnetic layer, and a pair of electrodes, in which the easy axis of magnetization of the pinned magnetic layer lies in an in-plane direction of the plane of the pinned magnetic layer, and the easy axis of magnetization of the free magnetic layer lies in a direction normal to the plane of the free magnetic layer. Preferably, the relationship between the saturation magnetization Ms and the magnetic anisotropy field Ha of the free magnetic layer satisfies 1.257 Ms
Abstract translation: 薄膜磁振动元件包括钉扎磁性层，自由磁性层，设置在钉扎磁性层和自由磁性层之间的非磁性间隔层，以及一对电极，其中固定的易磁化轴 磁性层位于被钉扎的磁性层的平面的面内方向，自由磁性层的易磁化轴位于与自由磁性层的平面垂直的方向上。 优选地，自由磁性层的饱和磁化强度Ms和磁各向异性场Ha之间的关系满足1.257 Ms
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