公开(公告)号：US20220334495A1

公开(公告)日：2022-10-20

申请号：US17494558

申请日：2021-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Hao LAI ,  Ming-Hsun TSAI ,  Hsin-Feng CHEN ,  Wei-Shin CHENG ,  Yu-Kuang SUN ,  Cheng-Hsuan WU ,  Yu-Fa LO ,  Shih-Yu TU ,  Jou-Hsuan LU ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20

Abstract: Impurities in a liquefied solid fuel utilized in a droplet generator of an extreme ultraviolet photolithography system are removed from vessels containing the liquefied solid fuel. Removal of the impurities increases the stability and predictability of droplet formation which positively impacts wafer yield and droplet generator lifetime.

公开(公告)号：US20220229371A1

公开(公告)日：2022-07-21

申请号：US17150685

申请日：2021-01-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Heng-Hsin LIU ,  Li-Jui CHEN ,  Shang-Chieh CHIEN

IPC: G03F7/20 ,  H05G2/00 ,  G21K1/06

Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. An array of sensors sense the extreme ultraviolet radiation and charged particles emitted by the droplets. A control system analyses sensor signals from the sensors and adjusts plasma generation parameters responsive to the sensor signals.

公开(公告)号：US20210247702A1

公开(公告)日：2021-08-12

申请号：US16787947

申请日：2020-02-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ssu-Yu CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN

IPC: G03F7/20 ,  H05G2/00

Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a volume to collect liquid tin debris remaining after a plasma generation process, a cover coupled to the volume, wherein the cover comprises at least one opening to allow the liquid tin debris to fall through the at least one opening of the cover and into the volume, and a heater coupled to the cover, wherein the heater is to melt solid tin that forms from cooling of the liquid tin debris on a surface around the at least one opening of the cover.

公开(公告)号：US20200314989A1

公开(公告)日：2020-10-01

申请号：US16899825

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi YANG ,  Sheng-Ta LIN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00 ,  B08B5/02 ,  B01D46/10 ,  G03F7/20

Abstract: An extreme ultraviolet radiation source is provided, including a vessel and a gas scrubber. The vessel has a gas inlet from which a cleaning gas is supplied into the vessel and a gas outlet from which the cleaning gas exits the vessel. The gas scrubber is disposed within the vessel, arranged such that the cleaning gas leaves the vessel through the gas outlet after flowing through the gas scrubber. The gas scrubber has a number of gas passages to allow the cleaning gas to flow through, and the sizes of the gas passages vary according to the distance between each of the gas passages and the gas outlet.

公开(公告)号：US20200178380A1

公开(公告)日：2020-06-04

申请号：US16697149

申请日：2019-11-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuan-Hung CHEN ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00 ,  G03F7/20

Abstract: A lithography apparatus includes an extreme ultraviolet (EUV) scanner, an EUV source coupled to the EUV scanner, a quartz crystal microbalance and a feedback controller. The quartz crystal microbalance is disposed on an internal surface of at least one of the EUV source and the EUV scanner. The feedback controller is coupled to the quartz crystal microbalance and one or more of a radiation source, a droplet generator, and optical guide elements controlling the trajectory of the radiation source associated with the EUV source.

公开(公告)号：US20200068696A1

公开(公告)日：2020-02-27

申请号：US16671347

申请日：2019-11-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chieh HSIEH ,  Shang-Chieh CHIEN ,  Chun-Chia HSU ,  Bo-Tsun LIU ,  Tzung-CHI FU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00 ,  G03F7/20

Abstract: A method for generating light is provided. The method further includes measuring a period of time during which one of targets from a fuel target generator passes through two detection positions. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the method includes adjusting at least one parameter of the laser generator according to the measured period of time, when the measured period of time is different from a predetermined value, wherein the parameter of the laser generator which is adjusted according to the measured period of time includes a frequency for generating a laser for illuminating the targets.

公开(公告)号：US20200057389A1

公开(公告)日：2020-02-20

申请号：US16442057

申请日：2019-06-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Sheng-Ta LIN ,  Po-Chung CHENG ,  Li-Jui CHEN ,  Shang-Chieh CHIEN

IPC: G03F7/20

Abstract: A droplet catcher includes a tube main body and baffles arranged along a length direction of the tube main body.

公开(公告)号：US20200004167A1

公开(公告)日：2020-01-02

申请号：US16415642

申请日：2019-05-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chih CHEN ,  Sheng-Kang YU ,  Chi YANG ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20 ,  H05G2/00

Abstract: An extreme ultraviolet (EUV) radiation source apparatus includes a collector and a target droplet generator for generating a tin (Sn) droplet. A debris collection device is disposed over a reflection surface of the collector, and at least one drip hole is located between the debris collection device and the collector. A tin bucket for collecting debris from the debris collection device is located below the at least one drip hole, and a tube or guide rod extends from the drip hole to the tin bucket.

公开(公告)号：US20190155179A1

公开(公告)日：2019-05-23

申请号：US16117545

申请日：2018-08-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Ying WU ,  Shang-Chieh CHIEN ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.

公开(公告)号：US20190150263A1

公开(公告)日：2019-05-16

申请号：US15906787

申请日：2018-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wei-Chih LAI ,  Han-Lung CHANG ,  Chi YANG ,  Shang-Chieh CHIEN ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: H05G2/00

Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.