公开(公告)号：US07864281B2

公开(公告)日：2011-01-04

申请号：US11574087

申请日：2005-08-23

申请人： Wataru Nakamura ,  Atsushi Ban ,  Shoji Okazaki ,  Hiromitsu Katsui ,  Yoshihiro Okada

发明人： Wataru Nakamura ,  Atsushi Ban ,  Shoji Okazaki ,  Hiromitsu Katsui ,  Yoshihiro Okada

IPC分类号： G02F1/1333

CPC分类号： G02F1/136227 ,  G02F1/136286

摘要： An active matrix substrate includes a substrate; scanning lines formed on the substrate; an insulating film covering the scanning lines; signal lines intersecting the scanning lines via the insulating film; switching elements formed on the substrate, each operating in response to a signal which is applied to the corresponding scanning line; and pixel electrodes each capable of being electrically connected to the corresponding signal line via the switching elements. The insulating film is a multilayer insulating film including a first insulating layer and a second insulating layer. The first insulating layer is formed of an insulating material containing an organic component, and the multilayer insulating film has a low-stack region in at least a portion of a region overlapping each switching element, the first insulating layer not being formed in the low-stack region. The active matrix substrate reduces the capacitance formed at each intersection between a scanning line and a signal line, without causing an increase in the wiring resistance or a degradation of the driving ability of switching elements.

摘要翻译： 有源矩阵基板包括基板; 形成在基板上的扫描线; 覆盖扫描线的绝缘膜; 经由绝缘膜与扫描线相交的信号线; 形成在基板上的开关元件，每个开关元件响应于施加到相应扫描线的信号而工作; 以及各自能够经由开关元件电连接到对应的信号线的像素电极。 绝缘膜是包括第一绝缘层和第二绝缘层的多层绝缘膜。 第一绝缘层由含有有机成分的绝缘材料形成，并且多层绝缘膜在与开关元件重叠的区域的至少一部分中具有低堆叠区域，第一绝缘层不形成在低电压 堆栈区域。 有源矩阵基板减少了在扫描线和信号线之间的每个交叉点处形成的电容，而不会导致布线电阻的增加或开关元件的驱动能力的劣化。

公开(公告)号：US20100214490A1

公开(公告)日：2010-08-26

申请号：US12095938

申请日：2006-07-28

申请人： Toshihide Tsubata ,  Yoshihiro Okada ,  Atsushi Ban ,  Toshinori Sugihara

发明人： Toshihide Tsubata ,  Yoshihiro Okada ,  Atsushi Ban ,  Toshinori Sugihara

IPC分类号： H04N5/44 ,  G09G3/20 ,  G02F1/1333

CPC分类号： G02F1/1368 ,  H01L27/124 ,  H01L27/1248 ,  H01L29/41733

摘要： An active matrix substrate includes a transistor, a pixel electrode, a drain lead electrode connected with the drain electrode of the transistor, and a contact hole connecting the drain lead electrode and the pixel electrode. A non-electrode through-bore portion is created on the drain lead electrode, and an opening of the contact hole crosses the through-bore portion. As a result, any changes or decreases in the contact area between the drain lead electrode and the pixel electrode may be prevented or reduced significantly, while the open area ratio can be improved.

摘要翻译： 有源矩阵基板包括晶体管，像素电极，与晶体管的漏极连接的漏极引线电极以及连接漏极引线电极和像素电极的接触孔。 在漏极引线电极上形成非电极通孔部分，并且接触孔的开口穿过通孔部分。 结果，可以显着地防止或降低漏极引线电极和像素电极之间的接触面积的任何变化或减小，同时可以提高开口面积比。

公开(公告)号：US20090153758A1

公开(公告)日：2009-06-18

申请号：US12097796

申请日：2006-07-28

申请人： Toshihide Tsubata ,  Yoshihiro Okada ,  Atsushi Ban ,  Toshinori Sugihara

发明人： Toshihide Tsubata ,  Yoshihiro Okada ,  Atsushi Ban ,  Toshinori Sugihara

IPC分类号： G02F1/133

CPC分类号： G02F1/136259 ,  G02F1/133707 ,  G02F2001/136263 ,  G02F2001/136268 ,  H01L27/124 ,  H01L27/1255 ,  H01L2924/19041

摘要： An active matrix substrate includes a transistor, a pixel electrode connected with one of the current-flowing electrodes of the transistor; a storage capacitor wiring; a lead wiring extending from one of the current-flowing electrodes of the transistor; and a repair wiring extending from the storage capacitor wiring. The repair wiring overlaps a portion of the lead wiring with an insulating layer interposed therebetween. As a result, TFT defects (for example, a short circuit between a source electrode and a drain electrode) can be repaired, and performance of fast display and reduction in electric power consumption can be realized.

摘要翻译： 有源矩阵基板包括晶体管，与晶体管的电流流动电极之一连接的像素电极; 存储电容器配线; 从晶体管的电流流动电极之一延伸的引线; 以及从保持电容配线延伸的修补布线。 修补布线与引线之间的绝缘层与引线的一部分重叠。 结果，可以修复TFT缺陷（例如，源电极和漏电极之间的短路），并且可以实现快速显示和降低功耗。

公开(公告)号：US07547918B2

公开(公告)日：2009-06-16

申请号：US11158041

申请日：2005-06-22

申请人： Kyoko Azumada ,  Kenji Nakamura ,  Atsushi Ban ,  Tatsuya Fujita

发明人： Kyoko Azumada ,  Kenji Nakamura ,  Atsushi Ban ,  Tatsuya Fujita

IPC分类号： H01L29/04 ,  H01L29/15

CPC分类号： H01L51/0022 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/1292 ,  H01L27/3279

摘要： An auxiliary line including a guide layer and an auxiliary metallic member is formed with respect to a signal transmitting line or a main auxiliary capacitance line formed on a glass substrate. The guide layer is formed in the same layer where pixel electrodes are formed. The auxiliary metallic member is formed by using a method such as an inkjet method, in which fine particles of metal is ejected or dropped.

摘要翻译： 相对于形成在玻璃基板上的信号传输线或主辅助电容线，形成包括引导层和辅助金属部件的辅助线。 引导层形成在形成像素电极的相同层中。 辅助金属构件通过使用诸如喷墨方法的方法形成，其中金属的细颗粒被喷射或掉落。

公开(公告)号：US6133157A

公开(公告)日：2000-10-17

申请号：US119993

申请日：1998-07-21

申请人： Takehisa Sakurai ,  Hitoshi Ujimasa ,  Katsuhiro Kawai ,  Atsushi Ban ,  Masaru Kajitani ,  Mikio Katayama

发明人： Takehisa Sakurai ,  Hitoshi Ujimasa ,  Katsuhiro Kawai ,  Atsushi Ban ,  Masaru Kajitani ,  Mikio Katayama

IPC分类号： G02F1/13 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32137

摘要： In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chloride gas.

摘要翻译： 在根据本发明的用于选择性蚀刻包括第一硅层和形成在第一硅层上并掺杂有杂质的第二硅层的多层结构的第二硅层的方法中，通过使用第二硅层选择性地蚀刻第二硅层 包括氟利昂-14气体的蚀刻气体和选自氯化氢气体和氯化物气体的气体。

公开(公告)号：US5783494A

公开(公告)日：1998-07-21

申请号：US524886

申请日：1995-09-07

申请人： Takehisa Sakurai ,  Hitoshi Ujimasa ,  Katsuhiro Kawai ,  Atsushi Ban ,  Masaru Kajitani ,  Mikio Katayama

发明人： Takehisa Sakurai ,  Hitoshi Ujimasa ,  Katsuhiro Kawai ,  Atsushi Ban ,  Masaru Kajitani ,  Mikio Katayama

IPC分类号： G02F1/13 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/32137

摘要： In a method for selectively etching a second silicon layer of a multilayer structure which includes a first silicon layer and the second silicon layer formed on the first silicon layer and doped with impurities according to the present invention, the second silicon layer is selectively etched by using an etching gas including freon-14 gas and a gas selected from a group composed of hydrogen chloride gas and chlorine gas.

摘要翻译： 在根据本发明的用于选择性蚀刻包括第一硅层和形成在第一硅层上并掺杂有杂质的第二硅层的多层结构的第二硅层的方法中，通过使用第二硅层选择性地蚀刻第二硅层 包括氟利昂-14气体的蚀刻气体和选自氯化氢气体和氯气的气体。

公开(公告)号：US08932323B2

公开(公告)日：2015-01-13

申请号：US12028407

申请日：2008-02-08

申请人： Keita Suzuki ,  Atsushi Ban

发明人： Keita Suzuki ,  Atsushi Ban

IPC分类号： A61B17/00 ,  A61B10/06 ,  A61B17/128 ,  A61B1/018 ,  A61B17/34 ,  A61B17/29

CPC分类号： A61B10/06 ,  A61B1/018 ,  A61B17/1285 ,  A61B17/3478 ,  A61B2017/2931 ,  A61B2217/005 ,  A61B2217/007

摘要： An treatment tool for a endoscope comprises a treatment tool insertion portion to be inserted into a channel of the endoscope; an open/close member support portion formed in a distal end of the treatment tool insertion portion; an open/close member which is freely supported so as to be opened or closed and treats a target site; a liquid conduit which transports a liquid to a target site, liquid conduit being provided on an outside of the open/close member in a direction orthogonal to a lengthwise direction of the open/close member, and comprising at least one distal end aperture which opens toward the distal end direction of the open/close member support portion, the liquid conduit transports.

摘要翻译： 一种内窥镜治疗工具，其特征在于，包括：插入所述内窥镜的通道内的治疗工具插入部; 形成在治疗工具插入部的前端的开闭部件支撑部; 一个自由支撑以便打开或关闭并对待目标地点的开/关构件; 液体导管，其将液体输送到目标部位，液体导管在与所述开闭部件的长度方向正交的方向上设置在所述打开/关闭部件的外侧，并且包括至少一个开口的远端开口 朝向打开/关闭构件支撑部分的远端方向移动，液体导管传送。

公开(公告)号：US08405808B2

公开(公告)日：2013-03-26

申请号：US12946000

申请日：2010-11-15

申请人： Wataru Nakamura ,  Atsushi Ban ,  Shoji Okazaki ,  Hiromitsu Katsui ,  Yoshihiro Okada

发明人： Wataru Nakamura ,  Atsushi Ban ,  Shoji Okazaki ,  Hiromitsu Katsui ,  Yoshihiro Okada

IPC分类号： G02F1/1333

CPC分类号： G02F1/136227 ,  G02F1/136286

摘要： An active matrix substrate includes a substrate; scanning lines formed on the substrate; an insulating film covering the scanning lines; signal lines intersecting the scanning lines via the insulating film; switching elements formed on the substrate, each operating in response to a signal which is applied to the corresponding scanning line; and pixel electrodes each capable of being electrically connected to the corresponding signal line via the switching elements. The insulating film is a multilayer insulating film including a first insulating layer and a second insulating layer. The first insulating layer is formed of an insulating material containing an organic component, and the multilayer insulating film has a low-stack region in at least a portion of a region overlapping each switching element, the first insulating layer not being formed in the low-stack region. The active matrix substrate reduces the capacitance formed at each intersection between a scanning line and a signal line, without causing an increase in the wiring resistance or a degradation of the driving ability of switching elements.

摘要翻译： 有源矩阵基板包括基板; 形成在基板上的扫描线; 覆盖扫描线的绝缘膜; 经由绝缘膜与扫描线相交的信号线; 形成在基板上的开关元件，每个开关元件响应于施加到相应扫描线的信号而工作; 以及各自能够经由开关元件电连接到对应的信号线的像素电极。 绝缘膜是包括第一绝缘层和第二绝缘层的多层绝缘膜。 第一绝缘层由含有有机成分的绝缘材料形成，并且多层绝缘膜在与开关元件重叠的区域的至少一部分中具有低堆叠区域，第一绝缘层不形成在低电压 堆栈区域。 有源矩阵基板减少了在扫描线和信号线之间的每个交叉点处形成的电容，而不会导致布线电阻的增加或开关元件的驱动能力的劣化。

公开(公告)号：US20120188494A1

公开(公告)日：2012-07-26

申请号：US13496495

申请日：2010-06-18

申请人： Takehisa Yoshida ,  Masayuki Katagami ,  Atsushi Ban

发明人： Takehisa Yoshida ,  Masayuki Katagami ,  Atsushi Ban

IPC分类号： G02F1/1335

CPC分类号： G02F1/13394 ,  G02F1/133514 ,  G02F2001/13398 ,  G02F2201/506 ,  G02F2201/52

摘要： The present invention provides a liquid crystal display panel provided with a laminate spacer including a plurality of primary color filters which can avoid deterioration of the display quality and improve the production efficiency. The liquid crystal display panel of the present invention comprises: an array substrate provided with a first electrode; a color filter substrate provided with a second electrode; and a liquid crystal layer sandwiched between the array substrate and the color filter substrate, wherein the color filter substrate further includes: four or more differently colored transparent layers, the colors of which include red, green, blue, and at least one of yellow and white; and a laminate spacer formed by the second electrode and at least two layers among the four or more differently colored transparent layers, and the laminate spacer is surrounded by the yellow or white transparent layer when viewed in a plan view.

摘要翻译： 本发明提供一种液晶显示面板，其具备能够避免显示品质恶化，提高生产效率的多个原色滤色片的叠层间隔物。 本发明的液晶显示面板包括：具有第一电极的阵列基板; 设置有第二电极的滤色器基板; 以及夹在所述阵列基板和所述滤色器基板之间的液晶层，其中，所述滤色器基板还包括：四色以上不同颜色的透明层，其颜色包括红色，绿色，蓝色，以及黄色和 白色; 以及由所述第二电极和所述四色以上不同颜色的透明层中的至少两层形成的层压隔离物，并且当从俯视图中观察时，所述层叠间隔件被所述黄色或白色透明层围绕。

公开(公告)号：US08045076B2

公开(公告)日：2011-10-25

申请号：US12570296

申请日：2009-09-30

申请人： Toshihide Tsubata ,  Yoshihiro Okada ,  Atsushi Ban ,  Toshinori Sugihara

发明人： Toshihide Tsubata ,  Yoshihiro Okada ,  Atsushi Ban ,  Toshinori Sugihara

IPC分类号： G02F1/1333

CPC分类号： G02F1/136259 ,  G02F1/133707 ,  G02F2001/136263 ,  G02F2001/136268 ,  H01L27/124 ,  H01L27/1255 ,  H01L2924/19041

摘要： An active matrix substrate includes a transistor, a pixel electrode connected with one of the current-flowing electrodes of the transistor, a storage capacitor wiring, a lead wiring extending from one of the current-flowing electrodes of the transistor, and a repair wiring extending from the storage capacitor wiring. The repair wiring overlaps a portion of the lead wiring with an insulating layer interposed therebetween. As a result, TFT defects (for example, a short circuit between a source electrode and a drain electrode) can be repaired, and performance of fast display and reduction in electric power consumption can be realized.

摘要翻译： 有源矩阵基板包括晶体管，与晶体管的电流流动电极中的一个连接的像素电极，辅助电容布线，从晶体管的电流流动电极之一延伸的引线以及延伸的修复布线 从存储电容接线。 修补布线与引线之间的绝缘层与引线的一部分重叠。 结果，可以修复TFT缺陷（例如，源电极和漏电极之间的短路），并且可以实现快速显示和降低功耗。