摘要:
The present invention provides an image processing device for processing an original image having a first number of horizontal lines parallel to one another. Each of the first number of horizontal lines includes a second number of pixels. The image processing device has a processing unit and a storage unit. The processing unit resizes the original image to an output image with a scaling factor, the output image having a plurality of target pixels. The storage unit stores a gray scale of each pixel in at least one of the first number of horizontal lines. The processing unit has a first calculating unit, a selecting unit, and a second calculating unit. The first calculating unit calculates a maximum number of horizontal lines which the storage unit is able to store at once, based on the second number of pixels, the maximum number being less than the first number. The selecting unit selects a resizing method to resize the original image based on the scaling factor and the maximum number of horizontal lines. The second calculating unit calculates a gray scale of the target pixel in the output image with the selected method.
摘要:
Input image data (255, 100, 50) is first converted into output image data (240, 110, 40) based on the color conversion properties of the input end device and the output device, and is subsequently converted into final output image data (255, 115, 40). The latter conversion satisfies the relationship of (240−40):(110−40)=(255−40):(115−40). By changing the highest-gradation-level color in the output image data into the maximum gradation value (255), the complementary color component is made zero in the output results of the output device, thereby reducing granularity Since the middle-gradation-level color is corrected, variations in color hue are reduced.
摘要:
A semiconductor device includes a semiconductor layer formed on a semiconductor substrate via an insulating film and having a projecting shape, a gate electrode formed, via a gate insulating film, on a pair of side surfaces of four side surfaces of the semiconductor layer and a source region and drain region formed on two side surfaces, on which the gate electrode is not formed, of the four side surfaces of the semiconductor layer. A portion of a channel region formed in the semiconductor layer is electrically connected to the gate electrode.
摘要:
A semiconductor device comprising at least one FET formed on the semiconductor substrate, wherein the FET comprises a source region, a drain region, a channel region formed between the source and drain regions and including a plurality of projected epitaxial silicon regions arranged in a width direction of the channel region, each of the projected epitaxial silicon regions having a triangular ridge portion, a gate insulating film formed on the channel region, and a gate electrode formed on the gate insulating film.
摘要:
A first conversion table defines a plurality of grid points that are arranged in a predetermined color space. The grid points include a darkest grid point that is indicative of a darkest point among all the grid points. The grid points further include at least (N+1) number of grid points that are successively arranged in a predetermined direction from the darkest grid point, N being an integer greater than or equal to one (1), the grid points including an N-th grid point and an (N+1)-th grid point that are located N-th and (N+1)-th among the at least (N+1) number of grid points, respectively. The first conversion table lists up an intermediate-component-value combination at each grid point, the intermediate-component-value combination, at at least one grid point that is located between the darkest grid point and the (N+1)-th grid point in the predetermined direction and that includes the N-th grid point, being determined through interpolation based on the intermediate-component-value combination at the darkest grid point and on the intermediate-component-value combination at the (N+1)-th grid point.
摘要:
A semiconductor processing system includes a transfer apparatus for transferring a wafer. The transfer apparatus has a pick arm member with wings. The reference distances between the wafer located at the normal position and the wings are stored in a memory of a CPU. Detection ranges of line sensors are set in a standby position in front of a process chamber in order to detect the distances between the wafer and the wings. In the CPU, the amount of positional shift of the wafer is detected based on the reference distances and the detected distances.
摘要:
A tightening tool includes a drive member rotatably driven by a motor. An intermediate member is interposed between the drive member and a spindle and rotatable with the drive member. A claw clutch is formed between the spindle and the intermediate member and is engageable when the spindle is moved axially through abutment of a bit on a work. A connecting mechanism is interposed between the intermediate member and the drive member for permitting rotation of the intermediate member relative to the drive member within a predetermined range. A biasing member normally keeps the rotational position of the intermediate member relative to the drive member. The rotation of the drive member is transmitted to the intermediate member after the drive member is rotated relative to the intermediate member by a predetermined angle when the claw clutch is engaged by movement of the spindle through abutment of the bit on the work.
摘要:
A semiconductor laser device is disclosed which emits laser light from a facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an AlGaAs active layer for laser oscillation, and a protective film formed on the facet, wherein a film containing sulfur is provided between the facet and the protective film.