公开(公告)号：US5545919A

公开(公告)日：1996-08-13

申请号：US497756

申请日：1995-07-03

申请人： Satoshi Ueda ,  Tetsuya Ueda ,  Atsuhiro Yamano ,  Kousaku Yano

发明人： Satoshi Ueda ,  Tetsuya Ueda ,  Atsuhiro Yamano ,  Kousaku Yano

IPC分类号： H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L23/31 ,  H01L23/52 ,  H01L23/532 ,  H01L23/58

CPC分类号： H01L23/3171 ,  H01L23/5329 ,  H01L2924/0002

摘要： Metal wires are formed side by side over a semiconductor substrate, with an interlayer insulating film interposed between the metal interconnections and the semiconductor substrate. The metal interconnections are covered with a passivation film composed of a lower silicon oxide film and an upper silicon nitride film. The silicon oxide film is deposited so that the maximum thickness of the portions of the silicon oxide film on the side faces of the metal interconnections is less than half of the minimum space between the metal interconnections. The silicon nitride film is deposited so as to be interposed between the portions of the silicon oxide film on the side faces of the adjacent metal interconnections.

摘要翻译： 金属线并排地形成在半导体衬底上，层间绝缘膜介于金属互连和半导体衬底之间。 金属互连用由下部氧化硅膜和上部氮化硅膜构成的钝化膜覆盖。 沉积氧化硅膜，使得金属互连侧面上的氧化硅膜的部分的最大厚度小于金属互连之间的最小空间的一半。 沉积氮化硅膜以便在相邻的金属互连的侧面上介于氧化硅膜的部分之间。

公开(公告)号：US5518513A

公开(公告)日：1996-05-21

申请号：US307056

申请日：1994-09-16

申请人： Atsumasa Iwanaga ,  Kiyoshi Nagashima ,  Tetsuya Ueda ,  Hisataka Urakata ,  Tetsuya Fujino

发明人： Atsumasa Iwanaga ,  Kiyoshi Nagashima ,  Tetsuya Ueda ,  Hisataka Urakata ,  Tetsuya Fujino

IPC分类号： B01D46/00 ,  B01D46/24 ,  B01D46/42

CPC分类号： B01D46/2407 ,  B01D46/002 ,  B01D46/0049 ,  B01D46/0067 ,  B01D46/2418

摘要： A dust removing apparatus suppresses pressure and temperature variations of cleaned gas to facilitate the removal of dust. A clean gas chamber delimited by a plurality of porous ceramic tubular filter elements is divided in two by a partition wall. The respective chambers are connected through discrete outlet pipes to a clean gas main pipe, and backwashing devices are provided in the respective outlet pipes. Furthermore, a porous ceramics filter element is provided on a bottom partition plate so that the gas flow velocity in the tubular filter elements can be insured to prevent dust from adhering thereto.

摘要翻译： 除尘装置抑制净化气体的压力和温度变化，以便除尘。 由多个多孔陶瓷管状过滤器元件限定的清洁气体室由分隔壁分成两部分。 各个室通过离散出口管连接到清洁气体主管，并且反洗装置设置在相应的出口管中。 此外，在底部隔板上设置多孔陶瓷过滤元件，使得可以保证管状过滤元件中的气体流速，以防止灰尘附着在其上。

公开(公告)号：US5385867A

公开(公告)日：1995-01-31

申请号：US216968

申请日：1994-03-24

申请人： Tetsuya Ueda ,  Kousaku Yano ,  Tomoyasu Murakami ,  Michinari Yamanaka ,  Shuji Hirao ,  Noboru Nomura

发明人： Tetsuya Ueda ,  Kousaku Yano ,  Tomoyasu Murakami ,  Michinari Yamanaka ,  Shuji Hirao ,  Noboru Nomura

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L21/283 ,  H01L21/31

CPC分类号： H01L21/76847 ,  H01L21/76844 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/5226 ,  H01L2924/0002 ,  Y10S438/948

摘要： After accumulating a BPSG film layer on a silicon substrate, a first Al--Si--Cu film layer, a W film layer and a second Al--Si--Cu film layer are successively accumulated on this BPSG film layer. A resist pattern with wide-width and narrow-width pattern portions is formed on the second Al--Si--Cu film layer. The wide-width pattern portion is provided at a position corresponding to a contact for connecting a first-layer metallic wiring and a second-layer metallic wiring, while the narrow-width pattern portion is provided at a position corresponding to a wiring portion for the first-layer metallic wiring. After applying first etching on the second Al--Si--Cu film layer with a mask of the resist patter, second etching is applied on the W film layer. Thereafter, by applying third etching, the resist pattern remaining on the first-layer metallic wiring is removed and the first Al--Si--Cu film layer is transfigured into a tall metallic film portion and a short metallic film portion. After accumulating an inter-layer insulating film layer on the first Al--Si--Cu film layer, etchback is applied on this inter-layer insulating film layer until the top of the tall metallic film portion is bared. Then, the second-layer metallic wiring is formed on the inter-layer insulating film layer so that the second-layer metallic wiring is connected with the tall metallic film portion.

摘要翻译： 在硅衬底上积累BPSG膜层之后，第一Al-Si-Cu膜层，W膜层和第二Al-Si-Cu膜层依次堆积在该BPSG膜层上。 在第二Al-Si-Cu膜层上形成具有宽幅和窄宽图案部分的抗蚀剂图案。 宽幅图形部分设置在与用于连接第一层金属布线和第二层金属布线的接触件相对应的位置处，而窄宽图案部分设置在与布线部分相对应的位置处 第一层金属布线。 在具有抗蚀剂图案的掩模的第二Al-Si-Cu膜层上施加第一蚀刻之后，在W膜层上施加第二蚀刻。 此后，通过施加第三蚀刻，去除残留在第一层金属布线上的抗蚀剂图案，并将第一Al-Si-Cu膜层变形为高金属膜部分和短金属膜部分。 在第一Al-Si-Cu膜层上积累层间绝缘膜层之后，在该层间绝缘膜层上施加回蚀，直到高金属膜部分的顶部露出。 然后，在层间绝缘膜层上形成第二层金属布线，使得第二层金属布线与高金属膜部分连接。

公开(公告)号：US09115418B2

公开(公告)日：2015-08-25

申请号：US14004334

申请日：2012-03-07

申请人： Yuzuru Nakamura ,  Minoru Kawasaki ,  Katsunori Yamaguchi ,  Tetsuya Ueda ,  Keiko Ishizaki

发明人： Yuzuru Nakamura ,  Minoru Kawasaki ,  Katsunori Yamaguchi ,  Tetsuya Ueda ,  Keiko Ishizaki

IPC分类号： C22B11/02 ,  C22B11/00

CPC分类号： C22B11/02 ,  C22B11/021 ,  Y02P10/214

摘要： Provided is a method of unevenly distributing a specific element in a copper phase out of platinum group elements that exist in the copper phase, including further adding copper into a molten copper phase containing the platinum group elements including at least rhodium, thereby increasing a distribution ratio of rhodium in the molten copper phase.

摘要翻译： 提供了一种从铜相中存在的铂族元素中不均匀地分布铜相中的特定元素的方法，包括进一步将铜添加到含有至少包含铑的铂族元素的熔融铜相中，从而增加分配比 的铑在熔融铜相中。

公开(公告)号：US08502385B2

公开(公告)日：2013-08-06

申请号：US13150593

申请日：2011-06-01

申请人： Seiji Oka ,  Tetsuya Ueda

发明人： Seiji Oka ,  Tetsuya Ueda

IPC分类号： H01L23/48 ,  H01L23/498

CPC分类号： H01L21/56 ,  H01L23/3121 ,  H01L23/49811 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A power semiconductor device has the power semiconductor elements having back surfaces bonded to wiring patterns and surface electrodes, cylindrical communication parts having bottom surfaces bonded on the surface electrodes of the power semiconductor elements and/or on the wiring patterns, a transfer mold resin having concave parts which expose the upper surfaces of the communication parts and cover the insulating layer, the wiring patterns, and the power semiconductor elements. External terminals have one ends inserted in the upper surfaces of the communication parts and the other ends guided upward, and at least one external terminal has, between both end parts, a bent area which is bent in an L shape and is embedded in the concave part of the transfer mold resin.

摘要翻译： 功率半导体器件具有将背面接合到布线图案和表面电极的功率半导体元件，具有接合在功率半导体元件的表面电极上和/或布线图案上的底面的圆筒形连通部分，具有凹形 露出通信部的上表面并覆盖绝缘层的部分，布线图案和功率半导体元件。 外部端子的一端插入连通部的上表面，另一端被向上引导，并且至少一个外部端子在两端部之间具有弯曲的L形的弯曲区域并嵌入凹部 部分转移模具树脂。

公开(公告)号：US20130120217A1

公开(公告)日：2013-05-16

申请号：US13812300

申请日：2011-07-28

申请人： Tetsuya Ueda ,  Gouki Haida ,  Shintaro Yamamoto

发明人： Tetsuya Ueda ,  Gouki Haida ,  Shintaro Yamamoto

IPC分类号： H03H7/01

CPC分类号： H03H7/0138 ,  H01P1/203 ,  H01P7/082 ,  H01Q15/0086 ,  H03H7/0115

摘要： A reflective impedance element is connected to a port of a composite right/left-handed transmission line, and operates at a predetermined operating frequency so that an impedance when the reflective impedance element is seen from the port becomes a pure imaginary number jB. A reflective impedance component is connected to a port of the composite right/left-handed transmission line, and operates at the predetermined operating frequency so that an impedance when the reflective impedance element is seen from the port becomes −jB.

摘要翻译： 反射阻抗元件连接到复合右/左手传输线的端口，并且以预定的工作频率工作，使得当从端口看到反射阻抗元件时的阻抗变为纯虚数jB。 反射阻抗分量连接到复合右/左传输线的端口，并且以预定工作频率工作，使得从端口看到反射阻抗元件时的阻抗变为-jB。

公开(公告)号：US20110047812A1

公开(公告)日：2011-03-03

申请号：US12922289

申请日：2009-03-06

申请人： Yasuyo Sugimoto ,  Tsutomu Katou ,  Tetsuya Ueda ,  Takuya Kotanagi ,  Ippei Oda ,  Kazuhiro Taniguchi

发明人： Yasuyo Sugimoto ,  Tsutomu Katou ,  Tetsuya Ueda ,  Takuya Kotanagi ,  Ippei Oda ,  Kazuhiro Taniguchi

IPC分类号： F26B19/00 ,  F26B7/00 ,  F24F13/06

CPC分类号： D06F58/28 ,  D06F2058/2819 ,  D06F2058/2841 ,  D06F2058/2845

摘要： A control method for drying clothes is disclosed. The method finds a difference in surface temperature between clothes catching air and the same clothes catching no air, and then determines a degree of dryness in the clothes based on the difference. Based on the degree of dryness, the method determines at what time heating should start.

摘要翻译： 公开了一种用于干燥衣物的控制方法。 该方法发现衣物吸入空气与没有空气的衣物之间的表面温度差异，然后根据差异确定衣物的干燥程度。 根据干燥度，该方法确定加热开始的时间。

公开(公告)号：US07830014B2

公开(公告)日：2010-11-09

申请号：US12786156

申请日：2010-05-24

申请人： Tetsuya Ueda

发明人： Tetsuya Ueda

IPC分类号： H01L23/48

CPC分类号： H01L21/76801 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device includes the steps of: forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.

公开(公告)号：US07749891B2

公开(公告)日：2010-07-06

申请号：US12603197

申请日：2009-10-21

申请人： Tetsuya Ueda

发明人： Tetsuya Ueda

IPC分类号： H01L21/4763

CPC分类号： H01L21/76801 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76849 ,  H01L23/5222 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device includes the steps of: forming a plurality of lower interconnections at intervals in a first insulating film; removing a portion of the first insulating film located between the lower interconnections, thereby forming an interconnection-to-interconnection gap; forming a second insulating film over the first insulating film in which the lower interconnections and the interconnection-to-interconnection gap are formed such that an air gap is formed out of the interconnection-to-interconnection gap; and forming, in the second insulating film, a connection portion connected to one of the lower interconnections and an upper interconnection connected to the connection portion. The connection portion is formed to be connected to one of the lower interconnections not adjacent to the air gap.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在第一绝缘膜中间隔地形成多个下互连; 去除位于下互连之间的第一绝缘膜的一部分，从而形成互连互连间隙; 在所述第一绝缘膜上形成第二绝缘膜，其中所述下互连和互连互连间隙形成为使得从所述互连互连间隙形成气隙; 以及在所述第二绝缘膜中形成连接到所述下部互连中的一个的连接部分和连接到所述连接部分的上部互连件。 连接部分形成为连接到不邻近气隙的下互连中的一个。

公开(公告)号：US20090020281A1

公开(公告)日：2009-01-22

申请号：US11578724

申请日：2006-02-17

申请人： Tetsuya Ueda ,  Hideo Ohara ,  Akinori Yukimasa

发明人： Tetsuya Ueda ,  Hideo Ohara ,  Akinori Yukimasa

IPC分类号： G05D23/00 ,  F28D15/00

CPC分类号： F24D11/005 ,  F24D2200/16 ,  F24D2200/26 ,  F24H1/18 ,  F24H2240/06 ,  F24H2240/10 ,  F28D20/0034 ,  F28D21/0007 ,  F28F27/00 ,  F28F2265/10 ,  H01M2008/1095 ,  H01M2250/10 ,  H01M2250/402 ,  H01M2250/405 ,  Y02B90/12 ,  Y02B90/14 ,  Y02B90/16 ,  Y02E20/14 ,  Y02E60/142 ,  Y02P80/15

摘要： A cogeneration system of the present invention includes: an electric power generator (5); a cooling circuit (10) configured to cool the electric power generator (5) with a first heat transfer medium; a heat exchanger (16) provided on the cooling circuit (10); an exhaust heat recovery circuit (12) through which a second heat transfer medium that exchanges heat with the first heat transfer medium via the heat exchanger (16) flows; a heat storage unit (20) connected to the exhaust heat recovery circuit (12) and configured to store the second heat transfer medium that has undergone a heat exchange by the heat exchanger (16); and a controller (21), wherein a first temperature sensor (17), and a heater to which electric power is supplied from the electric power generator (5), are connected, in this order, downstream of the heat exchanger (16) in a direction in which the second heat transfer medium flows, and the controller (21) controls a flow rate of a circulating pump (13) so that, based on a temperature detected by the first temperature sensor (17), the detected temperature becomes a predetermined target temperature. In addition to preventing water temperature decrease in heat recovery and ensuring safety, this configuration can keep water temperature high at all times.

摘要翻译： 本发明的热电联产系统包括：发电机（5）; 冷却回路（10），被配置为用第一传热介质冷却所述发电机（5）; 设置在所述冷却回路（10）上的热交换器（16）。 通过热交换器（16）与第一传热介质进行热交换的第二传热介质通过该排气热回收回路（12）; 连接到排气热回收回路（12）并构造成存储由热交换器（16）进行热交换的第二传热介质的蓄热单元（20）。 以及控制器（21），其中第一温度传感器（17）和从发电机（5）供应电力的加热器依次连接在热交换器（16）的下游 第二传热介质流动的方向，并且控制器（21）控制循环泵（13）的流量，使得基于由第一温度传感器（17）检测到的温度，检测到的温度变为 预定目标温度。 除了防止热回收中的水温下降和确保安全性之外，这种配置可以始终保持水温高。