公开(公告)号：US5385867A

公开(公告)日：1995-01-31

申请号：US216968

申请日：1994-03-24

申请人： Tetsuya Ueda ,  Kousaku Yano ,  Tomoyasu Murakami ,  Michinari Yamanaka ,  Shuji Hirao ,  Noboru Nomura

发明人： Tetsuya Ueda ,  Kousaku Yano ,  Tomoyasu Murakami ,  Michinari Yamanaka ,  Shuji Hirao ,  Noboru Nomura

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L21/283 ,  H01L21/31

CPC分类号： H01L21/76847 ,  H01L21/76844 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/5226 ,  H01L2924/0002 ,  Y10S438/948

摘要： After accumulating a BPSG film layer on a silicon substrate, a first Al--Si--Cu film layer, a W film layer and a second Al--Si--Cu film layer are successively accumulated on this BPSG film layer. A resist pattern with wide-width and narrow-width pattern portions is formed on the second Al--Si--Cu film layer. The wide-width pattern portion is provided at a position corresponding to a contact for connecting a first-layer metallic wiring and a second-layer metallic wiring, while the narrow-width pattern portion is provided at a position corresponding to a wiring portion for the first-layer metallic wiring. After applying first etching on the second Al--Si--Cu film layer with a mask of the resist patter, second etching is applied on the W film layer. Thereafter, by applying third etching, the resist pattern remaining on the first-layer metallic wiring is removed and the first Al--Si--Cu film layer is transfigured into a tall metallic film portion and a short metallic film portion. After accumulating an inter-layer insulating film layer on the first Al--Si--Cu film layer, etchback is applied on this inter-layer insulating film layer until the top of the tall metallic film portion is bared. Then, the second-layer metallic wiring is formed on the inter-layer insulating film layer so that the second-layer metallic wiring is connected with the tall metallic film portion.

摘要翻译： 在硅衬底上积累BPSG膜层之后，第一Al-Si-Cu膜层，W膜层和第二Al-Si-Cu膜层依次堆积在该BPSG膜层上。 在第二Al-Si-Cu膜层上形成具有宽幅和窄宽图案部分的抗蚀剂图案。 宽幅图形部分设置在与用于连接第一层金属布线和第二层金属布线的接触件相对应的位置处，而窄宽图案部分设置在与布线部分相对应的位置处 第一层金属布线。 在具有抗蚀剂图案的掩模的第二Al-Si-Cu膜层上施加第一蚀刻之后，在W膜层上施加第二蚀刻。 此后，通过施加第三蚀刻，去除残留在第一层金属布线上的抗蚀剂图案，并将第一Al-Si-Cu膜层变形为高金属膜部分和短金属膜部分。 在第一Al-Si-Cu膜层上积累层间绝缘膜层之后，在该层间绝缘膜层上施加回蚀，直到高金属膜部分的顶部露出。 然后，在层间绝缘膜层上形成第二层金属布线，使得第二层金属布线与高金属膜部分连接。

公开(公告)号：US5312776A

公开(公告)日：1994-05-17

申请号：US977022

申请日：1992-11-16

申请人： Tomoyasu Murakami ,  Michinari Yamanaka ,  Kousaku Yano ,  Masayuki Endo ,  Noboru Nomura ,  Staoshi Ueda ,  Naoto Matsuo ,  Hiroshi Imai ,  Masafumi Kubota

发明人： Tomoyasu Murakami ,  Michinari Yamanaka ,  Kousaku Yano ,  Masayuki Endo ,  Noboru Nomura ,  Staoshi Ueda ,  Naoto Matsuo ,  Hiroshi Imai ,  Masafumi Kubota

IPC分类号： H01L21/02 ,  H01L21/3213 ,  H01L23/532 ,  H01L71/44

CPC分类号： H01L21/02071 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S148/131

摘要： According to the method of preventing the corrosion of metallic wirings of the present invention, aluminium alloy wirings are formed on the surface of a substrate with the use of photoresists, and the photoresists are then removed. Thereafter, HMDS (hexamethyl disilazine) serving as a surface-active agent or its derivative is supplied to the aluminium alloy wirings to form hydrophobic molecular layers on the lateral walls of the aluminium alloy wirings.

摘要翻译： 根据本发明的防止金属配线的腐蚀的方法，使用光致抗蚀剂在基板的表面上形成铝合金布线，然后除去光致抗蚀剂。 此后，将作为表面活性剂或其衍生物的HMDS（六甲基二硅嗪）供给到铝合金布线，以在铝合金布线的侧壁上形成疏水性分子层。

公开(公告)号：US5576247A

公开(公告)日：1996-11-19

申请号：US97231

申请日：1993-07-27

申请人： Kousaku Yano ,  Masayuki Endo ,  Yuka Terai ,  Noboru Nomura ,  Tomoyasu Murakami ,  Tetsuya Ueda ,  Satoshi Ueda

发明人： Kousaku Yano ,  Masayuki Endo ,  Yuka Terai ,  Noboru Nomura ,  Tomoyasu Murakami ,  Tetsuya Ueda ,  Satoshi Ueda

IPC分类号： H01L21/3105 ,  H01L21/316

CPC分类号： H01L21/3105 ,  Y10S438/974

摘要： A BPSG layer serving as a silicon oxide layer is formed on a semiconductor substrate 1. Formed on the surface of the BPSG layer is a hydrophobic molecular layer comprising hydrophobic groups such as methyl, ethyl and the like, by a silylation reaction (in which silyl having hydrophobic groups such as methyl groups, ethyl groups and the like, is reacted with OH groups, and in which the hydrophobic groups are substituted with H of the OH groups to generate --O--Si(CH.sub.3).sub.3 or the like). The molecular layer prevents the BPSG layer from absorbing moisture.

摘要翻译： 在半导体衬底1上形成用作氧化硅层的BPSG层。在BPSG层的表面上形成疏水性分子层，其通过甲硅烷基化反应（甲基， 具有疏水基团如甲基，乙基等与OH基团反应，并且其中疏水基团被H的OH基团取代以产生-O-Si（CH 3）3等）。 分子层防止BPSG层吸湿。

公开(公告)号：US5569628A

公开(公告)日：1996-10-29

申请号：US535323

申请日：1995-09-27

申请人： Kousaku Yano ,  Tomoyasu Murakami ,  Masayuki Endo ,  Noboru Nomura

发明人： Kousaku Yano ,  Tomoyasu Murakami ,  Masayuki Endo ,  Noboru Nomura

IPC分类号： H01L21/28 ,  H01L21/768 ,  H01L21/465

CPC分类号： H01L21/76841 ,  H01L21/76843

摘要： A silicon dioxide film is partly etched away to form an opening thereby exposing a silicon substrate. The surface of the opening, which is almost entirely covered with Si-OH, is coated with hexamethyldisilazane (HMDS) to bring about a silylation reaction. This causes the silicon substrate surface to be covered with a molecular film formed by replacing the hydrogen part in Si-OH with Si((CH.sub.3).sub.3. Atoms of aluminum are ejected by a sputtering process. The ejected aluminum atoms collide with the molecular film. Although some hydrocarbons (CH.sub.x) are sputtered or ejected due to such collision, a SiO.sub.x C.sub.y H.sub.z film 12' transformed from the molecular film is left between an aluminum film deposited and the silicon substrate. This SiO.sub.x C.sub.y H.sub.z film 12' acts as a barrier metal. The presence of the SiO.sub.x C.sub.y H.sub.z film prevents the occurrence of counter diffusion in the Al-Si system. No spikes are formed as a result.

摘要翻译： 部分地蚀刻掉二氧化硅膜以形成开口，从而暴露硅衬底。 几乎完全用Si-OH覆盖的开口的表面涂覆有六甲基二硅氮烷（HMDS）以进行甲硅烷基化反应。 这导致硅衬底表面被用Si（（CH 3）3代替Si-OH中的氢部分而形成的分子膜覆盖，铝的原子通过溅射工艺喷射，喷射的铝原子与分子膜碰撞 虽然由于这种碰撞而使一些烃类（CHx）溅射或喷射，但是从分子膜转化的SiO x C y H z膜12'留在沉积的铝膜和硅基板之间，该SiOxCyHz膜12'作为阻挡金属， SiOxCyHz膜的存在防止了在Al-Si系统中产生反向扩散，结果不形成尖峰。

公开(公告)号：US5834369A

公开(公告)日：1998-11-10

申请号：US594225

申请日：1996-01-31

申请人： Tomoyasu Murakami ,  Kousaku Yano

发明人： Tomoyasu Murakami ,  Kousaku Yano

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/28

CPC分类号： H01L23/53233 ,  H01L21/76838 ,  H01L23/5226 ,  H01L2924/0002

摘要： There are provided the steps of: forming a connection hole in an interlayer insulating film overlying a lower metal interconnection; forming a W plug in the connection hole; forming a first metal film and a second metal film over the interlayer insulating film and the W plug; forming an interconnection underlying film by using a photoresist mask with no alignment margin; and forming a diffusion preventing film made of a titanium fluoride or the like over the W plug, while etching away the exposed part of the first metal film. Reciprocal diffusion of tungsten and aluminum is prevented by the titanium fluoride or the like, thereby preventing the formation of an alloy having high electric resistivity. As a result, an alloy having high electric resistivity resulting from the reaction between the metal plug and the upper metal interconnection is prevented from being formed and a semiconductor device which is high in reliability and integration is provided through the manufacturing process involving no alignment margin.

摘要翻译： 提供了以下步骤：在覆盖下金属互连的层间绝缘膜中形成连接孔; 在连接孔中形成W插头; 在层间绝缘膜和W插头上形成第一金属膜和第二金属膜; 通过使用没有取向余量的光致抗蚀剂掩模，形成基底膜的互连; 并且在W插头上形成由氟化钛等制成的防扩散膜，同时蚀刻掉第一金属膜的暴露部分。 通过氟化钛等防止钨和铝的相互扩散，从而防止形成具有高电阻率的合金。 结果，防止了由金属插塞和上部金属互连件之间的反应产生的具有高电阻率的合金，并且通过不涉及取向余量的制造工艺来提供可靠性和集成度高的半导体器件。

公开(公告)号：US07731862B2

公开(公告)日：2010-06-08

申请号：US11475190

申请日：2006-06-27

申请人： Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

发明人： Hideo Nakagawa ,  Masaru Sasago ,  Tomoyasu Murakami

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： C23F4/00 ,  G02B2006/12166 ,  G02B2006/12197

摘要： A substance including tungsten and carbon is etched by using plasma. The plasma is generated from a mixed gas of a gas including a fluorine atom, a gas including a nitrogen atom and a gas including a hydrocarbon molecule.

摘要翻译： 通过使用等离子体蚀刻包括钨和碳的物质。 等离子体由包括氟原子的气体，包括氮原子的气体和包括烃分子的气体的混合气体产生。

公开(公告)号：US20070093575A1

公开(公告)日：2007-04-26

申请号：US10559578

申请日：2004-06-07

申请人： Tomoyasu Murakami ,  Shigenori Sato

发明人： Tomoyasu Murakami ,  Shigenori Sato

IPC分类号： C08K5/41

CPC分类号： C09J4/00 ,  C08F222/1006

摘要： [OBJECTIVE] The present invention provides anaerobic adhesive compositions which can be formulated with increases in both storage stability and speed of cure. [CONSTITUTION]An anaerobic adhesive composition, comprising: a polyacrylic ester capable of radical polymerization at room temperature; an organic peroxide; an anaerobic free radical generator capable of generating a free radical immediately after completion of contact with oxygen gas to facilitate the radical polymerization of the polyacrylic ester; and an organic hydrazide.

摘要翻译： [目的]本发明提供厌氧粘合剂组合物，其可以随着储存稳定性和固化速度的增加而配制。 [组成]厌氧性粘合剂组合物，其包含：能够在室温下自由基聚合的聚丙烯酸酯; 有机过氧化物; 能够在与氧气接触完成后立即产生自由基以促进聚丙烯酸酯的自由基聚合的厌氧自由基发生剂; 和有机酰肼。

公开(公告)号：US07109421B2

公开(公告)日：2006-09-19

申请号：US10937496

申请日：2004-09-10

申请人： Tsukasa Sekino ,  Mitsunori Tsunoda ,  Tomoyasu Murakami ,  Gaku Ito

发明人： Tsukasa Sekino ,  Mitsunori Tsunoda ,  Tomoyasu Murakami ,  Gaku Ito

IPC分类号： H02G1/00

CPC分类号： B60R16/0215 ,  H02G3/0462 ,  H02G3/34 ,  H02G11/006

摘要： For preventing a slack of a wire harness and bending the wire harness more smoothly, a harness holder includes an inner clamp member for supporting the wire harness and an outer clamp member supporting rotatably the inner clamp member. The slack preventing member is formed longer than the harness guide in a harness leading direction. Mounting the harness holder at a vehicle body and disposing a protector for receiving the wire harness at a slide door, the wire harness is wired from the harness holder to the protector. In a partially opened slide door, the slack preventing member supports the wire harness. In a full opened and a completely closed door, the harness guide supports the wire harness.

摘要翻译： 为了防止线束松弛并且更平稳地弯曲线束，线束保持器包括用于支撑线束的内部夹紧构件和可旋转地支撑内部夹紧构件的外部夹紧构件。 松弛防止构件在线束引导方向上比线束引导件形成得更长。 将线束架安装在车身上，并设置用于在滑动门处接收线束的保护器，线束从线束架线缆连接到保护器。 在部分打开的滑动门中，防松松构件支撑线束。 在完全打开和完全关闭的门中，线束导轨支撑线束。

公开(公告)号：US20060201710A1

公开(公告)日：2006-09-14

申请号：US11353064

申请日：2006-02-14

申请人： Tomoyasu Murakami

发明人： Tomoyasu Murakami

IPC分类号： H02G3/18

CPC分类号： H02G3/22 ,  B60R16/0222 ,  Y10T16/05

摘要： A grommet includes a cylindrical portion that operable to fit on an outer circumference of an electric wire which passes through a trough hole in a panel, a panel fitting portion on which an inner circumferential edge of the through hole in the panel is fitted, and a connecting portion that connects the cylindrical portion and the panel fitting portion. The panel fitting portion includes a seal projection that is brought into press contact with the panel, and a seal protection wall is provided on the panel fitting portion for reducing the influence to the panel fitting portion caused by a flow of injected water from external.

摘要翻译： 索环包括可操作以装配在通过面板中的槽孔的电线的外圆周上的圆柱形部分，面板装配部分，面板中的通孔的内周边缘在其上装配，以及 连接部分，其连接圆柱形部分和面板装配部分。 面板装配部分包括与面板压接的密封突起，并且在面板装配部分上设有密封保护壁，用于减少由外部注入的水流引起的对面板装配部分的影响。

公开(公告)号：US20050092511A1

公开(公告)日：2005-05-05

申请号：US10937496

申请日：2004-09-10

申请人： Tsukasa Sekino ,  Mitsunori Tsunoda ,  Tomoyasu Murakami ,  Gaku Ito

发明人： Tsukasa Sekino ,  Mitsunori Tsunoda ,  Tomoyasu Murakami ,  Gaku Ito

IPC分类号： F16B2/08 ,  B60R16/02 ,  H02G3/04 ,  H02G3/30 ,  H02G11/00 ,  H01B7/00

CPC分类号： B60R16/0215 ,  H02G3/0462 ,  H02G3/34 ,  H02G11/006

摘要： For preventing slack of a wire harness and bending the wire harness more smoothly, a harness holder 71 includes an inner clamp member 31 for supporting the wire harness 73 and an outer clamp member 38 supporting rotatably the inner clamp member. The slack preventing member 35 is formed longer than the harness guide 62 in a harness leading direction. Mounting the harness holder 71 at a vehicle body and disposing a protector for receiving the wire harness 73 at a slide door, the wire harness is wired from the harness holder to the protector. In partially opened slide door, the slack preventing member 35 supports the wire harness. In full opened and completely closed door, the harness guide 62 supports the wire harness.

摘要翻译： 为了防止线束松弛和线束弯曲更加平滑，线束夹持器71包括用于支撑线束73的内部夹持构件31和可旋转地支撑内侧夹紧构件的外部夹紧构件38。 松弛防止构件35在线束引导方向上比线束引导件62形成得更长。 将线束保持器71安装在车体处，并且在滑动门处设置用于接收线束73的保护器，线束从线束保持器布线到保护器。 在部分打开的滑动门中，防松松构件35支撑线束。 在完全打开和完全关闭的门中，线束引导件62支撑线束。