利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

116 条记录 (耗时 0.022 秒)

    Stitching prevention in multibeam imaging for exposing printing plates
    61.
    发明授权
    Stitching prevention in multibeam imaging for exposing printing plates 有权
    用于曝光印版的多光束成像中的缝合防止

    公开(公告)号：US07193641B2

    公开(公告)日：2007-03-20

    申请号：US11022576

    申请日：2004-12-22

    申请人： Thomas Klein ,  Wolfgang Sievers

    发明人： Thomas Klein ,  Wolfgang Sievers

    IPC分类号： B41J2/447

    CPC分类号： G03F7/24 ,  B41C1/05 ,  G03F7/2055 ,  G06K2215/111

    摘要： A method of exposing imaging data onto a sensitized medium including exposing K sets of N of tracks on to the medium according to a corresponding part of imaging data, each successive set being a pixel distance apart in a fast scan direction. The method further includes exposing L sets of N tracks onto the medium with an offset of M pixels in a slow scan direction substantially perpendicular to the fast scan direction, according to a second corresponding part of imaging data. The method includes repeating alternately exposing K sets and L sets of N tracks until the complete medium is exposed along the fast scan direction. During or after the alternately exposing K sets and L sets, there is progression in the slow scan direction such that after exposing the complete length of N tracks of exposed pixels, the next N tracks match along the medium at the start of the next N tracks.

    摘要翻译： 一种将成像数据曝光到敏化介质上的方法，包括根据成像数据的相应部分将K组N个磁道曝光到介质上，每个连续的组是在快速扫描方向上分开的像素距离。 该方法还包括根据成像数据的第二对应部分，将基于垂直于快速扫描方向的慢扫描方向的M个像素的偏移量的L组N个轨迹曝光到介质上。 该方法包括重复交替地暴露K组和L组N个磁道，直到完整的介质沿着快速扫描方向曝光。 在交替曝光K组和L组之间或之后，在慢扫描方向上有进展，使得在暴露出曝光的像素的N个磁迹的完整长度之后，下一个N个磁道在下一个N个磁迹的开始处沿着介质匹配 。

    Cloning and copying on surfaces
    63.
    发明授权
    Cloning and copying on surfaces 有权
    克隆和复制表面

    公开(公告)号：US06534271B2

    公开(公告)日：2003-03-18

    申请号：US09866513

    申请日：2001-05-25

    申请人： Jens Peter Fürste ,  Sven Klussmann ,  Thomas Klein ,  Günter Von Kiedrowski

    发明人： Jens Peter Fürste ,  Sven Klussmann ,  Thomas Klein ,  Günter Von Kiedrowski

    IPC分类号： C12Q168

    CPC分类号： C12N15/10 ,  C12Q1/686 ,  Y10S977/902 ,  C12Q2565/543 ,  C12Q2565/515 ,  C12Q2565/125

    摘要： The present invention provides for amplification methods for cloning and copying genetic material on surfaces as well as copying biological material insofar as, in a broader sense, it can be classified as a ligand-receptor system. The invention therefore relates in particular to a method for propagating ligands and receptors on at least two surfaces, comprising (a) immobilizing a first ligand on a first surface of a substantially solid phase; (b) adding a solution of receptors and binding complementary receptors to the first ligand; (c) transferring the receptor to a second surface and immobilizing the receptor at that location; (d) attaching an additional ligand to the immobilized receptor; and (e) transferring the additional ligand to the first surface and immobilizing it at that location, wherein the steps set forth above may be repeated,multiple times.

    摘要翻译： 本发明提供了用于在表面上克隆和复制遗传物质以及复制生物材料的扩增方法，只要在更广泛的意义上它可以分类为配体 - 受体系统。 因此，本发明具体涉及用于在至少两个表面上传播配体和受体的方法，其包括（a）将第一配体固定在基本固相的第一表面上; （b）加入受体的溶液并将互补受体结合到第一配体上; （c）将受体转移到第二表面并将受体固定在该位置处; （d）将另外的配体连接到固定的受体上; 和（e）将另外的配体转移到第一表面并将其固定在该位置，其中上述步骤可以重复多次。

    Method of manufacturing a low voltage n-channel MOSFET device
    64.
    发明授权
    Method of manufacturing a low voltage n-channel MOSFET device 失效
    制造低电压n沟道MOSFET器件的方法

    公开(公告)号：US4205330A

    公开(公告)日：1980-05-27

    申请号：US896658

    申请日：1978-04-17

    申请人： Thomas Klein

    发明人： Thomas Klein

    IPC分类号： H01L21/8236 ,  H01L29/78 ,  H01L27/02

    CPC分类号： H01L21/8236 ,  Y10S148/053 ,  Y10S148/141

    摘要： A novel MOSFET circuit and method of manufacture utilizing a double ion implant process for manufacturing a low voltage high performance n-channel device that includes an enhancement transistor inverter combined with a depletion transistor load. The process starts with high resistivity material and uses a first ion implant process to dope the field region and to give the required threshold voltage for an enhancement device. A second ion implant is used to dope the channel region for the depletion device.

    摘要翻译： 一种新颖的MOSFET电路和利用双离子注入工艺制造低电压高性能n沟道器件的制造方法，该器件包括与耗尽晶体管负载相结合的增强晶体管反相器。 该过程从高电阻率材料开始，并且使用第一离子注入工艺来掺杂场区域并为增强器件提供所需的阈值电压。 使用第二离子注入来掺杂耗尽装置的通道区域。

    Method of manufacturing Si gate MOS integrated circuit
    65.
    发明授权
    Method of manufacturing Si gate MOS integrated circuit 失效
    Si栅极MOS集成电路的制造方法

    公开(公告)号：US4151631A

    公开(公告)日：1979-05-01

    申请号：US798215

    申请日：1977-05-18

    申请人： Thomas Klein

    发明人： Thomas Klein

    IPC分类号： H01L21/033 ,  H01L21/336 ,  B01J17/00

    CPC分类号： H01L29/66575 ,  H01L21/033 ,  H01L29/41783 ,  Y10S148/113 ,  Y10S148/114 ,  Y10S148/141 ,  Y10S438/981

    摘要： An IC manufacturing method that eliminates the need for separate pad area and allows polysilicon MOS transistor gates to be contacted directly. Present silicon gate process techniques are utilized up to and including the formation of the gate oxide layer, with areas etched through to the substrate. Then polysilicon and silicon nitride are deposited preferably in the same deposition equipment. The polysilicon interconnect and gate pattern is selectively etched for both silicon nitride and polysilicon. Next, the gate oxide exposed by the previous step is removed and phosphorous is diffused into the exposed silicon substrate surfaces. The initial nitride thickness is chosen such that after phosphorous predeposition and subsequent removal of phosphorous glass, a thin layer of silicon nitride is left. A silicon oxide protective layer is then grown over the exposed silicon substrate surfaces. The remaining silicon nitride is removed and a phosphosilicate glass is deposited over the entire surface. Contact cuts are made through the phosphosilicate glass through which metal contacts are established.

    摘要翻译： 一种IC制造方法，其不需要单独的焊盘区域并允许多晶硅MOS晶体管栅极直接接触。 现有的硅栅极工艺技术被利用直到并包括形成栅极氧化物层，区域被蚀刻到衬底上。 然后多晶硅和氮化硅优选沉积在相同的沉积设备中。 对于氮化硅和多晶硅都选择性地蚀刻多晶硅互连和栅极图案。 接下来，去除通过前一步骤曝光的栅极氧化物，并且磷扩散到暴露的硅衬底表面中。 选择初始氮化物厚度，使得在磷预沉积和随后除去磷的玻璃之后，留下薄层的氮化硅。 然后在暴露的硅衬底表面上生长氧化硅保护层。 去除剩余的氮化硅，并在整个表面上沉积磷硅玻璃。 通过形成金属接触的磷硅玻璃制成接触切割。

    METHOD FOR REDUCING THE DIMENSIONALITY OF A SPATIALLY REGISTERED SIGNAL DERIVED FROM THE OPTICAL PROPERTIES OF A SAMPLE, AND DEVICE THEREFOR
    68.
    发明申请
    METHOD FOR REDUCING THE DIMENSIONALITY OF A SPATIALLY REGISTERED SIGNAL DERIVED FROM THE OPTICAL PROPERTIES OF A SAMPLE, AND DEVICE THEREFOR 有权
    用于降低从样品的光学性质衍生的空间注册信号的尺寸的方法及其装置

    公开(公告)号：US20150055136A1

    公开(公告)日：2015-02-26

    申请号：US14386658

    申请日：2013-03-21

    申请人： Robert Alexander Huber ,  Thomas Klein ,  Wolfgang Wieser

    发明人： Robert Alexander Huber ,  Thomas Klein ,  Wolfgang Wieser

    IPC分类号： G01B9/02

    CPC分类号： G01B9/02091 ,  G01B9/02004 ,  G01B9/02041 ,  G01B9/02048 ,  G01B9/02069 ,  G01B9/02083 ,  G01B2290/45

    摘要： At least one embodiment of the method is designed to create a two-dimensional image of a three-dimensional sample. The method comprises the following steps: provision of a wave-length-tunable light source (1) that emits primary radiation (P) with wavelengths that vary over time; sampling of location points of the sample (2) with the primary radiation (P); collection of secondary radiation (S), wherein the secondary radiation (S) is a part of the primary radiation (P) reflected by the sample (2); creation of an interferometer-based detection signal for a plurality of sample areas, each with at least one location point, using a detection unit (4), wherein the detection signal is created as a difference signal from two output signals of a beam splitter (61) that receives reference radiation (R) and/or secondary radiation (S) at two inputs, wherein the reference radiation (R) is a portion of the primary radiation (P) that is not guided to the sample (2); and determination of a brightness value for at least one of the sample areas from the associated detection signal, wherein the determination of the brightness values is not substantially based on the summation of the individual signal amplitudes of the results of a Fourier transformation.

    摘要翻译： 该方法的至少一个实施例被设计成创建三维样本的二维图像。 该方法包括以下步骤：提供发射波长随时间变化的主辐射（P）的波长可调光源（1）; 用初级辐射（P）对样品（2）的位置点进行采样; 二次辐射（S）的收集，其中二次辐射（S）是由样品（2）反射的一次辐射（P）的一部分; 使用检测单元（4）为多个采样区域创建基于干涉仪的检测信号，每个采样区域具有至少一个位置点，其中所述检测信号被创建为来自分束器的两个输出信号的差分信号 其中所述参考辐射（R）是未被引导到所述样品（2）的所述主辐射（P）的一部分;其中所述参考辐射（R）是未被引导到所述样品（2）的一次辐射（P）的一部分。 以及根据相关联的检测信号确定至少一个采样区域的亮度值，其中亮度值的确定基本上不基于傅立叶变换的结果的各个信号幅度的总和。

    Method for producing a body part of a vehicle and body part of a vehicle
    69.
    发明授权
    Method for producing a body part of a vehicle and body part of a vehicle 有权
    用于制造车辆的身体部位和车辆的车身部分的方法

    公开(公告)号：US08898906B2

    公开(公告)日：2014-12-02

    申请号：US12753014

    申请日：2010-04-01

    申请人： Thomas Klein ,  Dirk Rainer Lungershausen ,  Jürgen Hulbert

    发明人： Thomas Klein ,  Dirk Rainer Lungershausen ,  Jürgen Hulbert

    IPC分类号： B21D53/88 ,  B23K33/00 ,  B23K26/26

    CPC分类号： B23K33/008 ,  B23K26/26 ,  B23K2101/006 ,  B62D25/04 ,  Y10T29/49622

    摘要： A method is provided for producing a body part of a vehicle. The method includes, but is not limited to providing a first profile part with at least one first welding flange and with a first opening as well as a second profile part with at least one third welding flange. The welding flange is at least partially arranged on the third welding flange subject to the formation of an at least partially closed form of the body part. The first welding flange and the third welding flange are arranged within the at least partially closed form. A first laser beam is guided through the first opening onto the first welding flange subject to the formation of at least one first laser weld seam between the first welding flange and the third welding flange.

    摘要翻译： 提供了一种用于制造车辆的车身部分的方法。 该方法包括但不限于提供具有至少一个第一焊接凸缘和第一开口的第一轮廓部分以及具有至少一个第三焊接凸缘的第二轮廓部分。 焊接凸缘至少部分地布置在第三焊接凸缘上，以形成身体部分的至少部分封闭形式。 第一焊接凸缘和第三焊接凸缘被布置在至少部分封闭的形式内。 在第一焊接凸缘和第三焊接凸缘之间形成至少一个第一激光焊缝之后，第一激光束被引导通过第一开口到第一焊接凸缘上。

    Photodynamic Control of Microbial Growth on Surfaces
    70.
    发明申请
    Photodynamic Control of Microbial Growth on Surfaces 审中-公开
    表面微生物生长的光动力学控制

    公开(公告)号：US20140119985A1

    公开(公告)日：2014-05-01

    申请号：US13996099

    申请日：2011-12-22

    申请人： Gabriele Berg ,  Stefan Liebminger ,  Lisa Oberauner ,  Thomas Klein ,  Roland Stampf

    发明人： Gabriele Berg ,  Stefan Liebminger ,  Lisa Oberauner ,  Thomas Klein ,  Roland Stampf

    IPC分类号： A61L2/16

    CPC分类号： A61L2/16 ,  A61L2/084 ,  A61L2/088 ,  A61L2/10 ,  A61L2/24 ,  A61L2202/26 ,  B01L1/04

    摘要： Methods and compositions for controlling microbial growth on a surface are disclosed. A method includes exposing the surface to be treated to electromagnetic radiation, the electromagnetic radiation being emitted from one or more electromagnetic radiation sources towards the surface, wherein the surface is provided with one or more photosensitizers being activatable by electromagnetic radiation. The electromagnetic radiation emitted from the one or more electromagnetic radiation sources has a wavelength in a range between 400 nm and 800 nm, and the one or more photosensitizers exhibit antimicrobial efficacy upon activation by electromagnetic radiation. A surface with one or more photosensitizers being activatable by electromagnetic radiation, one or more sources arranged to emit electromagnetic radiation towards the surface, wherein the one or more sources emit electromagnetic radiation having a wavelength in a range between 400 nm and 800 nm, and wherein the one or more photosensitizers exhibiting antimicrobial efficacy upon activation.

    摘要翻译： 公开了用于控制表面上的微生物生长的方法和组合物。 一种方法包括将待处理的表面暴露于电磁辐射，电磁辐射从一个或多个电磁辐射源朝向表面发射，其中该表面设置有可被电磁辐射激活的一个或多个光敏剂。 从一个或多个电磁辐射源发射的电磁辐射具有400nm至800nm范围内的波长，并且一种或多种光敏剂在通过电磁辐射激活时表现出抗菌功效。 具有一个或多个光敏剂的表面可通过电磁辐射激活，一个或多个源被布置成朝向表面发射电磁辐射，其中所述一个或多个源发射波长在400nm和800nm之间的波长的电磁辐射，并且其中 一种或多种光敏剂在活化时表现出抗菌功效。