公开(公告)号：US07510338B2

公开(公告)日：2009-03-31

申请号：US11892652

申请日：2007-08-24

申请人： Shin-ichi Sakuramoto ,  Masakazu Horishita ,  Kazuya Sasaki ,  Masaki Kunii ,  Tetsuya Yamada

发明人： Shin-ichi Sakuramoto ,  Masakazu Horishita ,  Kazuya Sasaki ,  Masaki Kunii ,  Tetsuya Yamada

IPC分类号： G02B6/36

CPC分类号： G02B6/4201 ,  G02B6/4246 ,  G02B6/4253 ,  G02B6/4255 ,  G02B6/4279 ,  H01S5/02216 ,  H01S5/02284

摘要： An optical transmitting/receiving apparatus capable of suppressing electrical crosstalk and magnetic crosstalk, includes: a laser diode/photo diode (LD/PD) integrated module that terminates a single-core bidirectional optical fiber; a circuit board electrically connected to a lead pin led out of the LD/PD integrated module; and a plastic case that accommodates the circuit board. At least a part of the plastic case abuts against the LD/PD integrated module, and impedance of the plastic case is controlled by mixing a conductive filler into the plastic case.

摘要翻译： 一种能够抑制电串扰和磁串扰的光发送/接收装置，包括：终止单芯双向光纤的激光二极管/光电二极管（LD / PD）集成模块; 电连接到从LD / PD集成模块引出的引脚的电路板; 以及容纳电路板的塑料外壳。 塑料外壳的至少一部分与LD / PD集成模块相接触，塑料外壳的阻抗通过将导电填料混合到塑料外壳中来控制。

公开(公告)号：US20080203465A1

公开(公告)日：2008-08-28

申请号：US12013709

申请日：2008-01-14

申请人： Tetsuya Yamada

发明人： Tetsuya Yamada

IPC分类号： H01L27/115 ,  H01L21/8247

CPC分类号： H01L29/66825 ,  G11C16/0433 ,  H01L21/28518 ,  H01L21/31144 ,  H01L21/3165 ,  H01L21/31662 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/11517 ,  H01L27/11526 ,  H01L27/11529 ,  H01L29/7883

摘要： The present invention provides a method for manufacturing a semiconductor device including the steps of forming a flash memory cell provided with a floating gate, an intermediate insulating film, and a control gate, forming first and second impurity diffusion regions, thermally oxidizing surfaces of a silicon substrate and the floating gate, etching a tunnel insulating film in a partial region through a window of a resist pattern; forming a metal silicide layer on the first impurity diffusion region in the partial region, forming an interlayer insulating film covering the flash memory cell, and forming, in a first hole of the interlayer insulating film, a conductive plug connected to the metal silicide layer.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括以下步骤：形成具有浮置栅极，中间绝缘膜和控制栅极的闪存单元，形成第一和第二杂质扩散区，热氧化硅表面 衬底和浮置栅极，通过抗蚀剂图案的窗口蚀刻部分区域中的隧道绝缘膜; 在所述部分区域中的所述第一杂质扩散区上形成金属硅化物层，形成覆盖所述闪速存储单元的层间绝缘膜，以及在所述层间绝缘膜的第一孔中形成与所述金属硅化物层连接的导电插塞。

公开(公告)号：US20080193146A1

公开(公告)日：2008-08-14

申请号：US12028136

申请日：2008-02-08

申请人： Tetsuya Yamada

发明人： Tetsuya Yamada

IPC分类号： G03G15/00

CPC分类号： G03G21/02 ,  G03G15/50 ,  G03G21/04

摘要： A monitoring apparatus and a monitoring system monitor a person who removed an output sheet for a print job or a copy job from an image forming apparatus that can be used by a plurality of users. With the use of a job-start notification, a job-end notification, and a sheet-removal notification received from the image forming apparatus, a video image during a period including the time at which the sheet output from the image forming apparatus was removed by a person can be recorded, and the video image can be managed in association with job information.

摘要翻译： 监视装置和监视系统监视从多个用户可以使用的图像形成装置移除用于打印作业或复印作业的输出纸的人。 通过使用从图像形成装置接收到的作业开始通知，作业结束通知和纸张删除通知，在包括从图像形成装置输出的纸张被移除的时间的时段期间的视频图像 可以记录一个人，并且可以与作业信息相关联地管理视频图像。

公开(公告)号：US20080143184A1

公开(公告)日：2008-06-19

申请号：US11956122

申请日：2007-12-13

申请人： Kazuo OTSUGA ,  Tetsuya Yamada ,  Kenichi Osada ,  Yusuke Kanno

发明人： Kazuo OTSUGA ,  Tetsuya Yamada ,  Kenichi Osada ,  Yusuke Kanno

IPC分类号： H02J1/00 ,  G01R19/00

CPC分类号： G01R19/0092 ,  Y10T307/406

摘要： A semiconductor integrated circuit is constituted to include a circuit block having a predetermined function, a power switch capable of supplying an operating power to the circuit block, and a current measuring circuit for obtaining a current flowing to the circuit block based on a voltage between terminals of the power switch in a state in which the power switch is turned on and an on-resistance of the power switch. The current flowing to the circuit block is obtained based on the voltage between terminals of the power switch in the state in which the power switch is turned on and the on-resistance of the power switch. Thus, it is possible to measure a current of the circuit block in a state in which a chip is normally operated.

摘要翻译： 半导体集成电路被构成为包括具有预定功能的电路块，能够向电路块提供工作电力的电源开关，以及电流测量电路，用于根据端子之间的电压获得流向电路块的电流 电源开关处于电源开关接通的状态和电源开关的导通电阻。 基于电源开关接通状态和电源开关的导通电阻之间的电源开关电压之间的电流可以获得流向电路块的电流。 因此，可以在芯片正常工作的状态下测量电路块的电流。

公开(公告)号：US20080114967A1

公开(公告)日：2008-05-15

申请号：US11935790

申请日：2007-11-06

申请人： Makoto Saen ,  Kenichi Osada ,  Tetsuya Yamada ,  Yusuke Kanno ,  Satoshi Misaka

发明人： Makoto Saen ,  Kenichi Osada ,  Tetsuya Yamada ,  Yusuke Kanno ,  Satoshi Misaka

IPC分类号： G06F9/302

CPC分类号： G06F1/3228 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a semiconductor integrated circuit device which consumes less power and enables real-time processing. The semiconductor integrated circuit device comprises: thermal sensors which can detect temperature, determine whether the detection result exceeds each of the above reference values and output the result; and a control block capable of controlling the operations of arithmetic blocks based on the output signals of the thermal sensors, wherein the control block returns to an operation state from a suspended state with an interrupt signal based on the output signals of the thermal sensors and determines the operation conditions of the arithmetic blocks to ensure that the temperature conditions of the arithmetic blocks are satisfied. Thereby, power consumption is reduced and real-time processing efficiency is improved.

摘要翻译： 提供了一种半导体集成电路器件，其消耗较少功率并实现实时处理。 半导体集成电路装置包括：可以检测温度的热传感器，确定检测结果是否超过上述参考值，并输出结果; 以及控制块，其能够基于所述热传感器的输出信号来控制运算块的运算，其中，所述控制块基于所述热传感器的输出信号，利用中断信号从暂停状态返回到运行状态，并且确定 运算块的操作条件，以确保运算块的温度条件得到满足。 从而降低了功耗，提高了实时处理效率。

公开(公告)号：US20080001242A1

公开(公告)日：2008-01-03

申请号：US11808235

申请日：2007-06-07

申请人： Tetsuya Yamada

发明人： Tetsuya Yamada

IPC分类号： H01L31/0232 ,  H01L21/00

CPC分类号： H01L31/0203 ,  H01L27/1446 ,  H01L31/02005 ,  H01L31/0232

摘要： In a light detector that is a semiconductor integrated circuit, a wiring structure is disposed on a semiconductor substrate along a periphery of a rectangular region that corresponds to a light receiver, and an interlayer insulating film composed of an SOG film is layered over the wiring structure. In this structure, the interlayer insulating film is thicker at a corner than at a center part of the light receiver. In order to increase efficiency of the incidence of light on the light receiver, the planar shape of the open part is formed so that the corners of the rectangle that surrounds the wiring structure are removed when the interlayer insulating film is etched and the open part is formed (i.e., yielding an octagonal shape). Accordingly, the effects of differences in the thickness of the interlayer film at the center part and corners of the light receiver are avoided, a bottom surface of the open part is formed in a flat manner, and uniformity in the incidence of light from the open part to the light receiver is improved.

摘要翻译： 在作为半导体集成电路的光检测器中，沿着与受光部对应的矩形区域的周边配置在半导体基板上的配线结构，在该配线结构上层叠由SOG膜构成的层间绝缘膜 。 在这种结构中，层间绝缘膜在角部比在光接收器的中心部分更厚。 为了提高光接收器的光的入射效率，开口部的平面形状形成为当蚀刻层间绝缘膜时，除去布线结构周围的矩形的角部，开放部为 形成（即产生八角形）。 因此，避免了在光接收器的中心部分和角部处的中间膜厚度差异的影响，开放部分的底表面以平坦的方式形成，并且来自开口的光的入射的均匀性 部分对光接收机的改进。

公开(公告)号：US20070207564A1

公开(公告)日：2007-09-06

申请号：US11709774

申请日：2007-02-23

申请人： Yoji Nomura ,  Tetsuya Yamada

发明人： Yoji Nomura ,  Tetsuya Yamada

IPC分类号： H01L21/00

CPC分类号： H01L31/18 ,  H01L27/1443 ,  H01L31/0216 ,  H01L31/105 ,  H01L2924/0002 ,  H01L2924/00

摘要： A step for etching a wiring-structure layer and the like on a light-receiving part of a light detector and forming an apertured part is simplified. A silicon nitride film 86 is formed on a semiconductor substrate 60 by CVD or the like, and a layered structure 88 that has the wiring-structure layer is then formed. A photoresist film 122 having an aperture above the light-receiving part is formed on the layered structure 88, and the layered structure 88 is etched using the photoresist layer as an etching mask. The type of etching and the conditions under which the etching is performed are such that the etching selectivity of the interlayer insulating film with respect to a silicon nitride film will be maintained. In the etching process, the silicon nitride film 86 functions as an etching stopper. The silicon nitride film 86 that has been exposed at a bottom part of the apertured part 116 constitutes an antireflective film.

摘要翻译： 简化了在光检测器的光接收部分上蚀刻布线结构层等并形成有孔部分的步骤。 通过CVD等在半导体衬底60上形成氮化硅膜86，然后形成具有布线结构层的层状结构88。 在层状结构88上形成具有光接收部分上方孔径的光致抗蚀剂膜122，并且使用光致抗蚀剂层作为蚀刻掩模蚀刻层状结构88。 蚀刻的类型和进行蚀刻的条件使得层间绝缘膜相对于氮化硅膜的蚀刻选择性将得到保持。 在蚀刻工艺中，氮化硅膜86用作蚀刻停止层。 在有孔部116的底部露出的氮化硅膜86构成防反射膜。

公开(公告)号：US07243119B1

公开(公告)日：2007-07-10

申请号：US10362775

申请日：2000-09-26

申请人： Tetsuya Yamada ,  Motonobu Tonomura ,  Fumio Arakawa

发明人： Tetsuya Yamada ,  Motonobu Tonomura ,  Fumio Arakawa

IPC分类号： G06F7/52

CPC分类号： G06F7/535 ,  G06F7/483 ,  G06F7/4873 ,  G06F7/5375 ,  G06F7/5525 ,  G06F2207/382 ,  G06F2207/5528

摘要： A Sweeney Robertson Tocher (SRT) divider and a square root extractor of floating point double-precision bit width, including a selector of single-precision and double-precision, a carry propagation adder (CPA) for conducting carry propagation of a partial remainder, a quotient digit selector circuit for making selection on a quotient digit, and a selector of a divisor or a partial square root extractor circuit, in a lower side thereof. A selector for selecting the propagation of carry between a carry save adder (CSA) in the upper side and the lower side thereof is provided, and a selector of a starting position within a quotient production circuit is provided, thereby enabling the execution of two (2) calculations, such as, division or square root extraction of the floating point single-precision, at the same time, but without increasing the bit width of a computing unit. Also, with the square root extraction, it is possible to execute two (2) calculations of single-precision in parallel, in a similar manner, by adding a partial square root extraction circuit thereinto.

摘要翻译： 一个Sweeney Robertson Tocher（SRT）分频器和一个浮点双精度位宽的平方根提取器，包括单精度和双精度的选择器，用于进行部分余数的进位传播的进位传播加法器（CPA） 用于在商数上进行选择的商数选择器电路，以及在其下侧的除数或部分平方根提取器电路的选择器。 提供了用于选择在上侧的进位存储加法器（CSA）和其下侧之间的进位传播的选择器，并且提供了在商生产电路内的起始位置的选择器，从而使得能够执行两个 2）计算，如分割或平方根提取浮点单精度，同时，但不增加计算单元的位宽。 此外，通过平方根提取，可以以类似的方式通过将部分平方根提取电路加到其中来并行地执行单精度的两（2）次计算。

公开(公告)号：US20060266445A1

公开(公告)日：2006-11-30

申请号：US10571023

申请日：2004-09-02

申请人： Tatsuo Yokoi ,  Tetsuya Yamada ,  Osamu Kawano

发明人： Tatsuo Yokoi ,  Tetsuya Yamada ,  Osamu Kawano

IPC分类号： C22C38/00 ,  C21D8/00

CPC分类号： C23C2/02 ,  C21D8/0226 ,  C21D2201/00 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C23C2/28 ,  Y10T428/12799

摘要： An exemplary hot rolled steel sheet can included, in terms of percent by mass, C of 0.01 to 0.2%; Si of 0.01 to 2%; Mn of 0.1 to 2%; P of ≦0.1%; S of ≦0.03%; Al of 0.001 to 0.1%; N of ≦0.01%; and as a remainder, Fe and unavoidable impurities. For example, a microstructure can be substantially a homogeneous continuous-cooled microstructure, and an average grain size of the microstructure may be more than 8 mm and 30 mm or less. An exemplary method for manufacturing a hot rolled steel sheet can include subjecting a slab having the above composition to a rough rolling so as to obtain a rough rolled bar, subjecting the rough rolled bar to a finish rolling so as to obtain a rolled steel under conditions in which a finishing temperature is (Ar3 transformation point +50° C.) or more; and starting cooling the rolled steel after 0.5 seconds or more pass from the end of the finish rolling at a temperature of the Ar3 transformation point or more. At least in the temperature range from the Ar3 transformation point can be cooled to 500° C. at a cooling rate of 80° C./sec or more, a further cooling can be effectuated until the temperature is 500° C. or less to obtain a hot rolled steel sheet and coiling the hot rolled steel sheet.

摘要翻译： 作为热轧钢板，可以以质量％计含有0.01〜0.2％的C， Si为0.01〜2％ Mn为0.1〜2％ P <0.1％; S <0.03％; Al为0.001〜0.1％; N <0.01％; 作为余量，Fe和不可避免的杂质。 例如，微结构可以是基本上均匀的连续冷却微结构，并且微结构的平均晶粒尺寸可以大于8mm和30mm或更小。 用于制造热轧钢板的示例性方法可以包括对具有上述组成的板坯进行粗轧以获得粗轧条，对粗轧条进行精轧，以在条件下获得轧制钢 其中终轧温度为（Ar3相变点+ 50℃）以上; 在Ar3相变点以上的温度下，从精轧结束0.5秒钟以上开始冷却轧制钢。 至少在Ar 3相变点的温度范围内，可以以80℃/秒以上的冷却速度将其冷却至500℃，进一步冷却至500℃以下 得到热轧钢板并卷取热轧钢板。

公开(公告)号：US20060179169A1

公开(公告)日：2006-08-10

申请号：US11333218

申请日：2006-01-18

申请人： Tetsuya Yamada

发明人： Tetsuya Yamada

IPC分类号： G06F3/00

CPC分类号： H04N1/00416 ,  G03G15/502 ,  G03G15/5087 ,  G03G15/5091 ,  G03G2215/00109 ,  H04N1/00347 ,  H04N1/00411 ,  H04N1/00482 ,  H04N2201/001 ,  H04N2201/0084 ,  H04N2201/0091 ,  H04N2201/0094

摘要： It is possible to provide a user with an operation screen having settings with which the user is familiar, such as an operation screen that has been used in the past for this external input/output device. When a external input/output device is connected to a information processing apparatus, specific information for specifying the device is acquired. Then, from a storage device that associates and stores an operation screen for processing an image that has been handled by the external device and the specific information, a corresponding operation screen is selected based upon the specific information that has been acquired. By displaying the selected operation screen on a touch-sensitive panel display, various setting operations can be performed with regard to an image that has been input from the external input/output device.

摘要翻译： 可以向用户提供具有用户熟悉的设置的操作屏幕，例如在过去已经用于该外部输入/输出设备的操作屏幕。 当外部输入/输出设备连接到信息处理设备时，获取用于指定设备的特定信息。 然后，从关联并存储用于处理由外部设备处理的图像的操作屏幕和特定信息的存储设备，基于已经获取的特定信息来选择相应的操作屏幕。 通过在触敏面板显示器上显示所选择的操作屏幕，可以对从外部输入/输出设备输入的图像进行各种设置操作。