公开(公告)号：US20100173487A1

公开(公告)日：2010-07-08

申请号：US12654559

申请日：2009-12-23

申请人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

发明人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

IPC分类号： H01L21/28

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66825 ,  H01L29/78

摘要： A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2 film, a film containing SiO2 as a main component and at least one of Hf and Zr, a film containing SiO2 as a main component and N, a film containing SiO2 as a main component, Hf and N, a film containing SiO2 as a main component, Zr and N, or a film containing SiO2 as a main component, Hf, Zr and N.

公开(公告)号：US20100159686A1

公开(公告)日：2010-06-24

申请号：US12659250

申请日：2010-03-02

申请人： Akio Kaneko ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Kazuhiro Eguchi ,  Motoyuki Sato

发明人： Akio Kaneko ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Kazuhiro Eguchi ,  Motoyuki Sato

IPC分类号： H01L21/28

CPC分类号： H01L21/28194 ,  H01L21/28079 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to the present invention comprises a semiconductor substrate, a gate insulating film which is composed of a material whose main component is a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO2, or a mixture of a tetravalent metal oxide and SiON and which containing B when it is in an nMOS structure on the semiconductor substrate or containing at least one of P and As when it is in a pMOS structure on the semiconductor substrate, and a gate electrode made of a metal having a work function of 4 eV to 5.5 eV.

公开(公告)号：US07652341B2

公开(公告)日：2010-01-26

申请号：US11889278

申请日：2007-08-10

申请人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

发明人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

IPC分类号： H01L29/78

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66825 ,  H01L29/78

摘要： A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2 film, a film containing SiO2 as a main component and at least one of Hf and Zr, a film containing SiO2 as a main component and N, a film containing SiO2 as a main component, Hf and N, a film containing SiO2 as a main component, Zr and N, or a film containing SiO2 as a main component, Hf, Zr and N.

摘要翻译： 一种半导体装置，其中形成在半导体衬底上的器件包括栅极绝缘膜，该栅极绝缘膜包括形成在基底上的高介电常数膜和形成在高介电常数膜上的抗反应膜，以及形成在抗反应上的栅电极 高介电常数膜包括含有Hf和Zr中的至少一种以及Si和O的膜，或包含Hf和Zr中的至少一种以及Si，O和N的膜，所述抗反应膜包括 SiO 2膜，含有SiO 2作为主要成分的膜和Hf和Zr中的至少一种，以SiO 2为主要成分的膜和N，以SiO 2为主要成分的膜，Hf和N，含有SiO 2作为 主成分Zr和N，或以SiO2为主要成分的膜，Hf，Zr和N.

公开(公告)号：US07265427B2

公开(公告)日：2007-09-04

申请号：US10927115

申请日：2004-08-27

申请人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

发明人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66825 ,  H01L29/78

摘要： A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2 film, a film containing SiO2 as a main component and at least one of Hf and Zr, a film containing SiO2 as a main component and N, a film containing SiO2 as a main component, Hf and N, a film containing SiO2 as a main component, Zr and N, or a film containing SiO2 as a main component, Hf, Zr and N.

摘要翻译： 一种半导体装置，其中形成在半导体衬底上的器件包括栅极绝缘膜，该栅极绝缘膜包括形成在基底上的高介电常数膜和形成在高介电常数膜上的抗反应膜，以及形成在抗反应上的栅电极 高介电常数膜包括含有Hf和Zr中的至少一种以及Si和O的膜，或包含Hf和Zr中的至少一种以及Si，O和N的膜，所述抗反应膜包括 SiO 2膜，含有SiO 2作为主要成分的膜和Hf和Zr中的至少一种的膜，含有SiO 2的膜作为 主要成分为N，以SiO 2为主要成分的膜，Hf和N，以SiO 2为主要成分的膜，Zr和N，或膜 含有SiO 2作为主要成分的Hf，Zr和N.

公开(公告)号：US07220681B2

公开(公告)日：2007-05-22

申请号：US11049671

申请日：2005-02-04

申请人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

IPC分类号： H01L21/31

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/3145

摘要： A semiconductor device including a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode; wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

摘要翻译： 一种半导体器件，包括选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅电极下方的沟道区的两侧上的源极区和漏极区; 其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度不大于5×10 22原子/ cm 3。

公开(公告)号：US20060244083A1

公开(公告)日：2006-11-02

申请号：US11475879

申请日：2006-06-28

申请人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

发明人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC分类号： H01L29/78

CPC分类号： H01L29/511 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28229 ,  H01L21/31604 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

公开(公告)号：US20060094255A1

公开(公告)日：2006-05-04

申请号：US11049671

申请日：2005-02-04

申请人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

IPC分类号： H01L21/31

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/3145

摘要： According to the present invention, there is provided a semiconductor device comprising: a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode, wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

摘要翻译： 根据本发明，提供了一种半导体器件，包括：选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅极电极下方的沟道区域的两侧上的源极区和漏极区，其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度 不大于5×10 22个原子/ cm 3。

公开(公告)号：US20060057746A1

公开(公告)日：2006-03-16

申请号：US10986408

申请日：2004-11-12

申请人： Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Katsuyuki Sekine ,  Kazuhiro Eguchi

发明人： Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Katsuyuki Sekine ,  Kazuhiro Eguchi

IPC分类号： H01L21/66

CPC分类号： H01L21/02148 ,  C23C16/401 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31645

摘要： According to the present invention, there is provided a semiconductor device fabrication method, comprising: depositing a film made of an insulating material on a surface of a semiconductor substrate; measuring a film thickness and/or composition of the film; setting nitriding conditions or oxidation conditions on the basis of the measurement result; and nitriding or oxidizing the film on the basis of the set nitriding conditions or oxidation conditions.

摘要翻译： 根据本发明，提供一种半导体器件制造方法，包括：在半导体衬底的表面上沉积由绝缘材料制成的膜; 测量膜的膜厚度和/或组成; 根据测量结果设定氮化条件或氧化条件; 并根据设定的氮化条件或氧化条件对膜进行氮化或氧化。

公开(公告)号：US06999061B2

公开(公告)日：2006-02-14

申请号：US10234871

申请日：2002-09-03

申请人： Naozumi Hara ,  Kazuhiro Eguchi

发明人： Naozumi Hara ,  Kazuhiro Eguchi

IPC分类号： G09G5/08

CPC分类号： G06F3/04883 ,  G09G5/00

摘要： Electronic whiteboard system comprises projected position information setting means for setting projected position information of a PC screen image projected onto the screen of the electronic whiteboard, projected position information storage section for storing projected position information, desktop operation/drawing means for enabling operation on the PC screen image projected on the screen by using an electronic pin as well as storing the locus of free lines drawn on the PC screen image in correspondence with the base image of the PC screen, document information storage section for storing a pair of base image and free lines on a per page basis and storing a plurality of pages as document information, and document information regeneration means for displaying a base image on the window of a computer unit then free lines over the base image in the order the lines were drawn based on the document information stored in the document information storage section.

公开(公告)号：US20050184910A1

公开(公告)日：2005-08-25

申请号：US11061728

申请日：2005-02-22

申请人： Shuichiro Yamaguchi ,  Keisuke Maruyama ,  Hiromi Tokunaga ,  Kazuhiro Eguchi

发明人： Shuichiro Yamaguchi ,  Keisuke Maruyama ,  Hiromi Tokunaga ,  Kazuhiro Eguchi

IPC分类号： H01Q1/22 ,  H01Q1/24 ,  H01Q1/36 ,  H01Q1/38 ,  H01Q1/40 ,  H01Q9/30 ,  H01Q9/36 ,  H01Q9/38 ,  H01Q9/42

CPC分类号： H01Q1/243 ,  H01Q1/362 ,  H01Q1/38 ,  H01Q9/30

摘要： This invention provides an antenna module comprising: a helical antenna 1 including a base 2 and a pair of terminals 4, 5 and a helical area formed on the base 2; a power supply 7 for supplying power to one of the pair of terminals 4, 5 of the helical antenna 1; an opening connected to the other of the pair of terminals; an antenna substrate 9 on which the antenna 7 is mounted; a grounding area 10 formed in the vicinity of the power supply 7; and a peripheral conductor 16 formed at least a portion on the periphery of the antenna substrate 9, wherein the peripheral length of the peripheral conductor 16 formed on the periphery of the antenna substrate 9 is nearly integer times as long as ¼ wavelength of a resonance frequency.

摘要翻译： 本发明提供一种天线模块，包括：螺旋天线1，其包括基座2和一对端子4,5以及形成在基座2上的螺旋区域; 用于向螺旋天线1的一对端子4,5提供电力的电源7; 连接到所述一对端子中的另一个的开口; 安装有天线7的天线基板9; 形成在电源7附近的接地区域10; 以及形成在天线基板9的周围的至少一部分上的外围导体16，其中形成在天线基板9的周围的周边导体16的周长几乎是谐振频率的1/4波长的整数倍 。