公开(公告)号：US5889312A

公开(公告)日：1999-03-30

申请号：US890997

申请日：1997-07-10

申请人： Hideo Miura ,  Yasunobu Tanizaki ,  Eiji Wakimoto ,  Shinji Sakata ,  Makoto Ogasawara ,  Hiroo Masuda ,  Jun Murata ,  Noriaki Okamoto

发明人： Hideo Miura ,  Yasunobu Tanizaki ,  Eiji Wakimoto ,  Shinji Sakata ,  Makoto Ogasawara ,  Hiroo Masuda ,  Jun Murata ,  Noriaki Okamoto

IPC分类号： H01L21/762 ,  H01L27/08 ,  H01L3/22 ,  H01L21/265

CPC分类号： H01L21/76202 ,  H01L27/0802

摘要： A semiconductor device includes a thermal oxide film for isolation, a semiconductor region that becomes an element forming region with the circumference thereof surrounded by the oxide film and diffused resistance layers in the semiconductor region and provides a structure for controlling resistance value variation of diffused resistors originated in a stress generated at time of forming the oxide film for isolation. A distance between an end portion on a longer side closest to a thermal oxide film of the diffused layer and an end of the thermal oxide film is apart from each other by a predetermined value determined by stress distribution in the semiconductor region or by at least 4 .mu.m or more, the longitudinal direction of the diffused layer portion formed from the end of the thermal oxide film over to a stress distribution (gradient) forming region in the semiconductor region is parallel to the forming direction of the stress gradient, and resistance value distribution is formed parallel to the stress gradient in the diffused layer formed from the end of the thermal oxide film over to the stress distribution forming region in the semiconductor region.

摘要翻译： 半导体器件包括用于隔离的热氧化膜，半导体区域，其成为元件形成区域，其周边被半导体区域中的氧化物膜和扩散电阻层包围，并且提供用于控制起始的扩散电阻器的电阻值变化的结构 在形成用于隔离的氧化膜时产生的应力。 最靠近扩散层的热氧化膜的较长侧的端部与热氧化膜的端部之间的距离彼此分开由半导体区域中的应力分布确定的预定值或至少4 从热氧化膜的端部到半导体区域的应力分布（梯度）形成区域形成的扩散层部的纵向方向平行于应力梯度的形成方向，电阻值 分布形成为平行于从热氧化膜的端部到半导体区域中的应力分布形成区域形成的扩散层中的应力梯度。

公开(公告)号：US5436991A

公开(公告)日：1995-07-25

申请号：US284283

申请日：1994-08-02

申请人： Hiroshi Sunagawa ,  Takashi Yamada ,  Hideo Miura

发明人： Hiroshi Sunagawa ,  Takashi Yamada ,  Hideo Miura

IPC分类号： G02B6/124 ,  G02B6/34

CPC分类号： G02B6/124 ,  G02B6/34

摘要： An optical waveguide device for coupling an external wave with a guided wave by means of a grating coupler formed on an optical waveguide device which lies on a substrate. The grating coupler is further coated with a cladding layer. An external wave is transformed into a guided wave after being diffracted by a first grating coupler, and travels along the waveguide to a second grating coupler. The guided wave is then subjected to diffraction by means of the second grating coupler, whereupon a minus first-order wave is diffracted only toward the substrate, whilst other waves of higher order are respectively diffracted toward the cladding layer and the substrate. The wave diffracted toward the cladding layer is totally reflected from a cladding layer boundary furtherst from the substrate, thereby passing through the substrate. The diffracted wave thus reflected interferes with the other wave of the same order diffracted to the substrate, thereby weakening each other.

公开(公告)号：US5402289A

公开(公告)日：1995-03-28

申请号：US996316

申请日：1992-12-23

申请人： Hideki Hayashi ,  Hideo Miura ,  Seilichi Funaya ,  Kouji Seki

发明人： Hideki Hayashi ,  Hideo Miura ,  Seilichi Funaya ,  Kouji Seki

IPC分类号： G11B15/44 ,  G11B5/54

CPC分类号： G11B15/442

摘要： A mode plate (5) which moves between a plurality of operational positions controls the respective positions of a head plate (2) and a link (8). The link (8) is turned to a forward and a reverse position to selectively operate pinch roller casings (12F, 12R) through a change link (4). This causes pinch rollers (13F, 13R) to be pressed against capstans (15F, 15R), respectively to thereby provide a forward or reverse play mode tape travel. By the turning of the link (8), an FF/REW plate (27) is moved to a forward and a reverse side through a detect link (9) and a spring (9a) such that FF/REW gears (25F, 25R) supported at the ends of an FF/REW plate (27) engage selectively with reel bases (11F, 11R) to thereby perform tape travel in an FF mode or a REW mode. A head plate (2) controls the positions of pinch roller casings (12F, 12R) and the FF/REW plate (27). At a stop mode position, the head plate (2) holds the pinch roller casings (12F, 12R) and FF/REW plate (27) at the release positions while holding the FF/REW plate (27) at the release position at a play mode position. The head plate (29) causes idler plates (26F, 26R) which support idler gears (24F, 24R) to engage pinch roller casings (12F, 12R) to operate the idler plates (26F, 26R) depending on the operation of the pinch roller casings (12F, 12R) and engages the idler gears (24F, 24R) selectively with reel bases (11F, 11R), respectively.

摘要翻译： 在多个操作位置之间移动的模板（5）控制头板（2）和连杆（8）的各自位置。 连杆（8）转向正向和反向位置，以通过变速杆（4）选择性地操作压紧辊壳体（12F，12R）。 这使得夹送辊（13F，13R）分别压靠在绞盘（15F，15R）上，从而提供正向或反向播放模式的磁带行进。 通过连杆（8）的转动，通过检测连杆（9）和弹簧（9a）将FF / REW板（27）移动到前侧和后侧，使得FF / REW齿轮（25F，25R ）支撑在FF / REW板（27）的端部，其选择性地与卷轴基座（11F，11R）接合，从而以FF模式或REW模式执行磁带行进。 头板（2）控制压紧辊壳体（12F，12R）和FF ​​/ REW板（27）的位置。 在停止模式位置，头板（2）将夹紧辊壳体（12F，12R）和FF ​​/ REW板（27）保持在释放位置，同时将FF / REW板（27）保持在释放位置处 播放模式位置。 头板（29）引起支撑惰轮（24F，24R）的惰轮板（26F，26R），以接合夹紧辊壳体（12F，12R），以根据夹紧件的操作来操作惰轮板（26F，26R） 辊筒（12F，12R）分别与空转齿轮（24F，24R）分别与卷盘底座（11F，11R）啮合。

公开(公告)号：US08026609B2

公开(公告)日：2011-09-27

申请号：US12759335

申请日：2010-04-13

申请人： Tomio Iwasaki ,  Hideo Miura

发明人： Tomio Iwasaki ,  Hideo Miura

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L23/53238 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53252 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided, is a reliable semiconductor device with a layered interconnect structure that may develop no trouble of voids and interconnect breakdowns, in which the layered interconnect structure comprises a conductor film and a neighboring film as so layered on a semiconductor substrate that the neighboring film is contacted with the conductor film. In the device, the materials for the conductor film and the neighboring film are so selected that the difference between the short side, ap, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the short side, an, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {lap−anl/ap}×100=A (%) and the difference between the long side, bp, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the long side, bn, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {lbp−bnl/bp}×100=B (%) satisfy an inequality of {A+B×(ap/bp)}

摘要翻译： 提供的是具有分层互连结构的可靠的半导体器件，其可以不产生空隙和互连故障的问题，其中分层互连结构包括导体膜和相邻的膜，如此分层在半导体衬底上，邻近膜被接触 与导体膜。 在该器件中，用于导体膜和相邻膜的材料被选择成使得构成具有导体膜的最小自由能和短边的平面的矩形单位电池的短边面ap之间的差， ，构成相邻膜的最小自由能的平面的矩形单位电池，构成的矩形单位电池的长边，bp之间的差值，即（lap-anl / ap}×100 = A（％） 构成相邻膜的最小自由能的{B1p-bnl / bp}×100 = B（％）的平面的矩形单位电池的导体膜的最小自由能和长边bn的平面满足 {A + B×（ap / bp）} <13的不等式。 在此，导体膜的扩散被延迟。

公开(公告)号：US20100254418A1

公开(公告)日：2010-10-07

申请号：US12734704

申请日：2008-11-07

申请人： Takahiro Nagashima ,  Hideo Miura

发明人： Takahiro Nagashima ,  Hideo Miura

IPC分类号： H01S3/10 ,  G02B6/42

CPC分类号： G02B6/02 ,  B23K26/064 ,  B23K26/073 ,  B23K26/0736 ,  B23K26/24 ,  G02B6/14 ,  G02B6/4206 ,  G02B6/4296

摘要： [Problems] A laser beam irradiation apparatus which can accurately perform a linear welding with a uniform width on an irradiation portion even if the overlap ratio is lowered is provided.[Means for Solving the Problems] A laser beam irradiation apparatus includes laser beam generation means for emitting a laser beam, an optical fiber for transmitting the laser beam incident on an input side face to an output side face, an incident optical unit for introducing the laser beam emitted from the laser beam generation means to the input side face of the optical fiber, and an emission optical unit for applying the laser beam emitted from the output side face of the optical fiber to an irradiation portion, wherein the core cross section of the optical fiber is formed to be rectangular, preferably oblong, throughout the optical fiber or in a range at a predetermined distance from the output side face, and the length of the range where the core cross section is rectangular is preferably set to 3 m or above.

摘要翻译： [问题]提供即使重叠率降低也能够在照射部分上精确地进行均匀宽度的线性焊接的激光束照射装置。 解决问题的手段激光束照射装置包括用于发射激光束的激光束产生装置，将入射到输入侧面的激光束传输到输出侧面的光纤，用于引入激光束的入射光学单元 从激光束产生装置发射的激光束到光纤的输入侧面;以及发射光学单元，用于将从光纤的输出侧面发射的激光束施加到照射部分，其中，芯部横截面 光纤在整个光纤中形成为矩形，优选为长方形，或者距离输出侧面在预定距离的范围内，芯部截面为矩形的范围的长度优选设定为3μm， 以上。

公开(公告)号：US07608899B2

公开(公告)日：2009-10-27

申请号：US11936443

申请日：2007-11-07

申请人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

发明人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： H01L21/823462 ,  H01L21/28097 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28518 ,  H01L21/31604 ,  H01L21/823412 ,  H01L27/1085 ,  H01L27/10873 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/78696

摘要： Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate lectrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

摘要翻译： 在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅极电介质膜6,7和栅极放电层8,9作为MOS晶体管。 氧化锆或氧化铪被用作栅极电介质膜6,7的主要成分。例如通过CVD形成栅极绝缘膜6,7。 作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用其表面为（111）的基板的情况下， 在使用表面为（001）晶面的硅衬底的情况下，氧的扩散系数小于氧的扩散系数的1/100，并且控制氧扩散。 因此，控制氧扩散，防止漏电流的产生，提高性能。 实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

公开(公告)号：US07508982B2

公开(公告)日：2009-03-24

申请号：US10668176

申请日：2003-09-24

申请人： Tatsuhide Tsuyuki ,  Shuji Ono ,  Hideo Miura

发明人： Tatsuhide Tsuyuki ,  Shuji Ono ,  Hideo Miura

IPC分类号： G06K9/00 ,  G06K9/40

CPC分类号： G06T7/97 ,  G06T5/50 ,  H04N13/128 ,  H04N13/133

摘要： Light that is incident through a pair of object lenses of digital binocular glasses is photographed by a pair of image pickup devices to obtain a pair of images (stereoscopic image) generating a difference corresponding to a parallax of both eyes. A geometric difference between image structures corresponding to a parallax of both eyes is recognized in the pair of images subjected to various corrections and stored in memories. Thereafter, a noise reduction process is performed, which reduces a difference (for example, a difference between random noises superposed on the pair of images by the image pickup devices) other than the recognized geometric difference between the image structures. The images subjected to the noise reduction process are displayed on a pair of display devices, and are visually recognized (stereoscopically viewed) by the user through eyepiece lenses.

摘要翻译： 通过一对数字双目眼镜入射的光被一对图像拾取装置拍摄，以获得产生与双眼的视差相对应的差的一对图像（立体图像）。 在经过各种校正的一对图像中识别对应于双眼视差的图像结构之间的几何差异并存储在存储器中。 此后，进行除图像结构之间识别的几何差异以外的差异（例如，由图像拾取装置叠加在一对图像上的随机噪声之间的差异）的降噪处理。 经过降噪处理的图像被显示在一对显示装置上，并且由用户通过目镜透视可视地（立体观看）。

公开(公告)号：US07436875B2

公开(公告)日：2008-10-14

申请号：US11489545

申请日：2006-07-20

申请人： Hideo Miura

发明人： Hideo Miura

IPC分类号： H01S3/08 ,  G02B6/26

CPC分类号： G02B6/3821 ,  G02B6/4204 ,  G02B6/4249 ,  H01S5/02284 ,  H01S5/32341 ,  H01S5/4012 ,  H01S5/4025

摘要： A laser module includes: one or more semiconductor laser elements which emit one or more laser beams; an optical fiber which has a light-entrance end face; and an optical condensing system which is constituted by one or more optical components and makes the one or more laser beams converge at the light-entrance end face of the optical fiber. In the laser module, at least one of one or more light-entrance surfaces and one or more light-output surfaces of the one or more optical components is exposed to air, and the one or more laser beams realize an optical power density of 15 W/mm2 or lower, or 60 to 800 W/mm2 at the at least one of the one or more light-entrance surfaces and the one or more light-output surfaces.

摘要翻译： 激光模块包括：发射一个或多个激光束的一个或多个半导体激光元件; 具有光入射端面的光纤; 以及由一个或多个光学部件构成并使一个或多个激光束会聚在光纤的光入射端面的光聚光系统。 在激光模块中，一个或多个光学部件的一个或多个光入射表面和一个或多个光输出表面中的至少一个暴露于空气中，并且一个或多个激光束实现15的光功率密度 一个或多个光入射表面中的至少一个上的W / mm 2或更低，或60至800W / mm 2， 输出面。

公开(公告)号：US07358578B2

公开(公告)日：2008-04-15

申请号：US10155833

申请日：2002-05-22

申请人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

发明人： Tomio Iwasaki ,  Hiroshi Moriya ,  Hideo Miura ,  Shuji Ikeda

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC分类号： H01L21/823462 ,  H01L21/28097 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28518 ,  H01L21/31604 ,  H01L21/823412 ,  H01L27/1085 ,  H01L27/10873 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/4975 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/78696

摘要： Diffusion layers 2-5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2-5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

摘要翻译： 在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8，以便成为MOS晶体管。 氧化锆或氧化铪被用作栅介质膜6,7的主要成分。 栅介质膜6,7例如通过CVD形成。 作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。 在使用表面为（111）晶面的基板的情况下，在使用表面为（001）晶面的硅基板的情况下，氧的扩散系数小于1/100，氧气 扩散被控制。 因此，控制氧扩散，防止漏电流的产生，提高性能。 实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

公开(公告)号：US20080036090A1

公开(公告)日：2008-02-14

申请号：US11834081

申请日：2007-08-06

申请人： Tomio Iwasaki ,  Hideo Miura

发明人： Tomio Iwasaki ,  Hideo Miura

IPC分类号： H01L23/532

CPC分类号： H01L23/53238 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53228 ,  H01L23/53242 ,  H01L23/53252 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided, is a reliable semiconductor device with a layered interconnect structure that may develop no trouble of voids and interconnect breakdowns, in which the layered interconnect structure comprises a conductor film and a neighboring film as so layered on a semiconductor substrate that the neighboring film is contacted with the conductor film. In the device, the materials for the conductor film and the neighboring film are so selected that the difference between the short side, ap, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the short side, an, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|ap−an|/ap}×100=A (%) and the difference between the long side, bp, of the rectangular unit cells that constitute the plane with minimum free energy of the conductor film and the long side, bn, of the rectangular unit cells that constitute the plane with minimum free energy of the neighboring film, {|bp−bn|/bp}×100=B (%) satisfy an inequality of {A+B×(ap/bp)}

摘要翻译： 提供的是具有分层互连结构的可靠的半导体器件，其可以不产生空隙和互连故障的问题，其中分层互连结构包括导体膜和相邻的膜，如此分层在半导体衬底上，邻近膜被接触 与导体膜。 在该器件中，用于导体膜和相邻膜的材料被选择成使构成具有最小自由能的平面的矩形单元电池的短边，即< 导体薄膜和构成具有相邻薄膜的最小自由能的平面的矩形单元电池的短边，即 _{n 构成该矩阵单元的长边，b p 之间的差，x100 = A（％） 构成具有相邻膜的最小自由能的平面的矩形单位电池的导体膜和长边的最小自由能的平面{| b＆lt; p＆lt; x100 = B（％）满足不等式{A + Bx（a p b＆lt; p＆lt; p＆gt;）} <13。 在此，导体膜的扩散被延迟。}