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公开(公告)号：US07125334B2
公开(公告)日：2006-10-24
申请号：US10136373
申请日：2002-05-02
IPC分类号： A63F13/00
CPC分类号： G07F17/3297 , A63F7/022 , A63F9/0468 , G07F17/32
摘要： A game machine for providing a game, the regularity of which cannot be easily recognized by the player, by making use of a chaotic random number produced by a random number generating means.
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公开(公告)号：US07118996B1
公开(公告)日：2006-10-10
申请号：US09235143
申请日：1999-01-21
IPC分类号： H01L21/265
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
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公开(公告)号：US07078727B2
公开(公告)日：2006-07-18
申请号：US10282189
申请日：2002-10-29
申请人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame , Hisashi Ohtani , Toshiji Hamatani
发明人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame , Hisashi Ohtani , Toshiji Hamatani
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L21/02672 , H01L21/2022 , H01L21/28158 , H01L21/3221 , H01L21/3226 , H01L27/12 , H01L27/1277 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78675
摘要： Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, in the silicon film, impurities included such as oxygen or chlorine, are segregated with extending along the crystal growth, the crystallinity is improved, and the gettering of nickel element proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.
摘要翻译： 镍选择性地保持与非晶硅膜的特定区域接触。 通过进行热处理来实现与基板平行的晶体生长。 通过在含有卤素元素的氧化气氛中进行热处理，在硅膜上形成热氧化膜。 在该步骤中，在硅膜中，包含的杂质如氧或氯的杂质沿着晶体生长延伸而分离，结晶度提高，并且镍元素的吸杂进行。 形成薄膜晶体管，使得连接源极和漏极区域的方向与上述晶体生长方向一致。 结果，具有诸如迁移率大于200cm 2 / Vs的优异特性和小于100mV / dec的S值的TFT。 可以获得。
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公开(公告)号：US20060006348A1
公开(公告)日：2006-01-12
申请号：US11221956
申请日：2005-09-09
IPC分类号： G21K5/10
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
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公开(公告)号：US06889977B2
公开(公告)日：2005-05-10
申请号：US10320380
申请日：2002-12-17
CPC分类号： A63F7/022 , A63F9/0468 , A63F2250/26
摘要： A game machine enabled to make various responses by adding the psychosomatic state and emotion of the player as one of conditions for determining the responding manner. The psychosomatic state of the player is grasped to change the responses in accordance with the psychological state of the player by making use of both a chaos attractor obtained by numerically processing the information sampled from the player and the index indicating the degree how the chaos attractor matches the defining condition of the chaos.
摘要翻译： 一种游戏机能够通过将玩家的身心状态和情感加入作为确定响应方式的条件之一来做出各种响应。 掌握玩家的身心状态，通过利用通过数字处理从玩家抽样的信息获得的混沌吸引子和表示混沌吸引子匹配度的指标，根据玩家的心理状态来改变响应 混乱的定义条件。
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公开(公告)号：US06885027B2
公开(公告)日：2005-04-26
申请号：US10267647
申请日：2002-10-10
申请人： Yasuhiko Takemura , Toshiji Hamatani , Toshimitsu Konuma , Jun Koyama , Yuji Kawasaki , Shunpei Yamazaki
发明人： Yasuhiko Takemura , Toshiji Hamatani , Toshimitsu Konuma , Jun Koyama , Yuji Kawasaki , Shunpei Yamazaki
IPC分类号： G02F1/1362 , G09G3/36 , H01L29/786 , H01L29/04 , G02F1/133
CPC分类号： H01L27/12 , G02F1/13624 , G02F2001/13685 , G09G3/3648 , G09G2300/0809 , G09G2300/0819 , G09G2300/0842 , G09G2300/0852 , G09G2320/0214 , H01L27/124 , H01L29/78621 , H01L29/78645 , H01L29/78696
摘要： A structure for reducing the OFF current of an active matrix display. In the active matrix display, plural TFTs are connected in series with each one pixel electrode. Of these TFTs connected in series, at least one TFT excluding the TFTs located at opposite ends is maintained in conduction. Alternatively, at least one capacitor is connected between the junction of the drain and source of each TFT connected in series and an AC grounded point. Thus, the amount of electric charge released from auxiliary capacitors during cutoff of the TFTs is reduced.
摘要翻译： 一种用于降低有源矩阵显示器的截止电流的结构。 在有源矩阵显示器中，多个TFT与每个像素电极串联连接。 在串联连接的这些TFT中，除了位于相对端的TFT之外的至少一个TFT保持导通。 或者，至少一个电容器连接在串联连接的每个TFT的漏极和源极的接点与AC接地点之间。 因此，在TFT的截止期间从辅助电容器释放的电荷量减少。
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公开(公告)号：US06734446B1
公开(公告)日：2004-05-11
申请号：US09696863
申请日：2000-10-25
IPC分类号： H01J37317
CPC分类号： H01J37/05 , H01J37/08 , H01J37/147 , H01J37/3171 , H01J37/32412 , H01J37/32752 , H01J2237/057 , H01J2237/0817 , H01J2237/304 , H01L21/26506 , H01L21/26513 , H01L21/26586
摘要： There is proposed an apparatus for doping a material to be doped by generating plasma (ions) and accelerating it by a high voltage to form an ion current is proposed, which is particularly suitable for processing a substrate having a large area. The ion current is formed to have a linear sectional configuration, and doping is performed by moving a material to be doped in a direction substantially perpendicular to the longitudinal direction of a section of the ion current.
摘要翻译： 提出了一种用于通过产生等离子体（离子）来掺杂待掺杂的材料并通过高电压加速以形成离子电流的装置，其特别适用于处理具有大面积的衬底。离子电流是 形成为具有线性截面构造，并且通过在与离子电流的截面的纵向方向基本垂直的方向上移动待掺杂的材料来进行掺杂。
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公开(公告)号：US06528358B1
公开(公告)日：2003-03-04
申请号：US09536792
申请日：2000-03-28
申请人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame , Hisashi Ohtani , Toshiji Hamatani
发明人： Shunpei Yamazaki , Satoshi Teramoto , Jun Koyama , Yasushi Ogata , Masahiko Hayakawa , Mitsuaki Osame , Hisashi Ohtani , Toshiji Hamatani
IPC分类号： H01L2100
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/2022 , H01L21/28158 , H01L21/3221 , H01L21/3226 , H01L27/12 , H01L27/1203 , H01L27/1277 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78675
摘要： A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus obtained is provided. The method for fabricating a semiconductor device comprises steps of intentionally introducing the metal element which promotes crystallization of silicon to the amorphous silicon film and crystallizing the amorphous silicon film by a first heat treatment to obtain the crystal silicon film; eliminating or reducing the metal element existing within the crystal silicon film by implementing a second heat treatment within an oxidizing atmosphere; eliminating a thermal oxide film formed in the previous step; and forming another thermal oxide film on the surface of the region from which the thermal oxide film has been eliminated by implementing another thermal oxidation.
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公开(公告)号：US06495404B1
公开(公告)日：2002-12-17
申请号：US09315968
申请日：1999-05-21
IPC分类号： H01L2100
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/02672 , H01L21/2026 , H01L21/67167 , H01L21/67207 , H01L21/67213 , H01L21/67225 , H01L21/67236
摘要： A laser processing apparatus provides a heating chamber, a chamber for laser light irradiation and a robot arm, wherein a temperature of a substrate on which a silicon film to be irradiated with laser light is formed is heated to 450 to 750° C. in the heating chamber followed by irradiating the silicon film with laser light so that a silicon film having a single crystal or a silicon film that can be regarded as the single crystal can be obtained.
摘要翻译： 激光加工装置提供加热室，用于激光照射的腔室和机器人臂，其中在其上形成有用激光照射的硅膜的基板的温度被加热到450至750℃ 加热室，然后用激光照射硅膜，从而可以获得可以被认为是单晶的具有单晶或硅膜的硅膜。
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公开(公告)号：US06482687B2
公开(公告)日：2002-11-19
申请号：US09840229
申请日：2001-04-24
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , H01L21/02675 , H01L21/2026 , H01L21/67167 , H01L21/67207 , H01L21/67213 , H01L21/67225 , H01L21/67236
摘要： A laser processing apparatus provides a heating chamber, a chamber for laser light irradiation and a robot arm, wherein a temperature of a substrate on which a silicon film to be irradiated with laser light is formed is heated to 450 to 750° C. in the heating chamber followed by irradiating the silicon film with laser light so that a silicon film having a single crystal or a silicon film that can be regarded as the single crystal can be obtained.
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