公开(公告)号：US5587944A

公开(公告)日：1996-12-24

申请号：US617247

申请日：1996-03-18

申请人： Jun Shen ,  Herbert Goronkin

发明人： Jun Shen ,  Herbert Goronkin

IPC分类号： G11C11/56 ,  G11C11/36

CPC分类号： G11C11/56 ,  G11C11/412 ,  G11C2211/5614

摘要： A high density multistate SRAM cell including N negative differential resistance diodes connected in series and to a load. The diodes and the load defining a memory node having N+1 stable states. A write transistor having a drain connected to the memory node and adapted to receive N+1 different amplitudes of voltage on the source, and a write signal on the gate. An amplifier having an input terminal connected to the memory node, and a read switch having an input terminal connected to the output terminal of the amplifier. A plurality of cells connected into a matrix with N+1 sense amplifiers associated with each column of the matrix so as to provide an output for each of the N+1 different amplitudes.

摘要翻译： 一个高密度多态SRAM单元，包括串联连接到负载的N个负差分电阻二极管。 二极管和负载定义具有N + 1个稳定状态的存储器节点。 一种写入晶体管，其漏极连接到存储器节点并且适于在源极上接收N + 1个不同的电压幅度，以及栅极上的写入信号。 具有连接到存储器节点的输入端的放大器和具有连接到放大器的输出端的输入端的读开关。 连接到具有与矩阵的每列相关联的N + 1个读出放大器的矩阵中的多个单元，以便为每个N + 1个不同幅度提供输出。

公开(公告)号：US5355005A

公开(公告)日：1994-10-11

申请号：US971118

申请日：1992-11-04

申请人： Saied Tehrani ,  Jun Shen ,  Herbert Goronkin ,  Robert Smith

发明人： Saied Tehrani ,  Jun Shen ,  Herbert Goronkin ,  Robert Smith

IPC分类号： H01L27/092 ,  H01L21/338 ,  H01L21/8238 ,  H01L27/06 ,  H01L27/095 ,  H01L29/778 ,  H01L29/812 ,  H01L31/072 ,  H01L29/06 ,  H01L29/80 ,  H01L31/109

CPC分类号： H01L27/0605 ,  H01L27/095 ,  H01L29/7783

摘要： A complementary field effect structure having a first field effect device (26) including a quantum well having a first channel (12). A first doping region (14) is positioned adjacent to a first quantum well and a first gate electrode (29) is positioned so that the first doping region (14) is between the first gate electrode (29) and the first channel (12) . A second field effect device (37) includes a second channel (22) and a second doping region (19) positioned adjacent to the second channel. A second gate electrode (31) is positioned over the second channel (22) so that the second channel (22) is between the second gate electrode (31) and the second doping region (19). An interconnect electrically couples the first gate electrode (29) to the second gate electrode (31).

摘要翻译： 具有包括具有第一通道（12）的量子阱的第一场效应器件（26）的互补场效应结构。 第一掺杂区域（14）定位成与第一量子阱相邻，并且第一栅电极（29）被定位成使得第一掺杂区域（14）在第一栅电极（29）和第一沟道（12）之间， 。 第二场效应装置（37）包括邻近第二通道定位的第二通道（22）和第二掺杂区域（19）。 第二栅电极（31）位于第二通道（22）上方，使得第二通道（22）位于第二栅极电极（31）和第二掺杂区域（19）之间。 互连将第一栅电极（29）电耦合到第二栅电极（31）。

公开(公告)号：US5298763A

公开(公告)日：1994-03-29

申请号：US970456

申请日：1992-11-02

申请人： Jun Shen ,  Saied Tehrani ,  Herbert Goronkin

发明人： Jun Shen ,  Saied Tehrani ,  Herbert Goronkin

IPC分类号： H01L29/32 ,  H01L29/161 ,  H01L29/205

CPC分类号： H01L29/32

摘要： A semiconductor structure that provides intrinsic doping from native defects is provided. A quantum well including a narrow bandgap material (11, 14) having a low concentration of native defects is sandwiched between two wide bandgap spacer layers (12, 20, 17, 15). The spacer layers (12, 20, 17, 15) have a low concentration of native defects. At least one doping region (13, 16) having a high concentration of native defects positioned adjacent to one of the undoped spacer layers (12, 17).

摘要翻译： 提供了一种从天然缺陷提供内在掺杂的半导体结构。 包括具有低浓度天然缺陷的窄带隙材料（11,14）的量子阱夹在两个宽带隙间隔层（12,20,17,15）之间。 间隔层（12,20,17,15）具有低浓度的天然缺陷。 至少一个掺杂区域（13,16）具有与未掺杂的间隔层（12,17）中的一个相邻定位的高浓度的天然缺陷。

公开(公告)号：US5280180A

公开(公告)日：1994-01-18

申请号：US932116

申请日：1992-08-19

申请人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani ,  Raymond K. Tsui ,  X. Theodore Zhu

发明人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani ,  Raymond K. Tsui ,  X. Theodore Zhu

IPC分类号： H01L21/20 ,  H01L23/535 ,  H01L29/06 ,  H01L29/80 ,  H01L29/161 ,  H01L29/205

CPC分类号： H01L23/535 ,  H01L2924/0002

摘要： A semiconductor device having a lateral interconnect or via formed by quantum well comprising a semiconductor material is provided. The lateral interconnect (17, 18, 19) formed by a quantum well comprising a first semiconductor material composition. A first semiconductor region (11, 12, 13) comprising a second material type is formed adjacent to the lateral interconnect (17, 18, 19). A second semiconductor region (23, 24, 26) comprising the second material type is adjacent to the lateral interconnect (17, 18, 19) so that the lateral interconnect (17, 18, 19) separates the first (11, 12, 13) and second (23, 24, 26) semiconductor regions. The first (17, 18, 19) and second (23, 24, 26) semiconductor regions have a first quantized energy level that is substantially equal. The lateral interconnect (17, 18, 19) has a first quantized energy level capable of alignment with the quantized energy levels of the first (11, 12, 13) and second (23, 24, 26) semiconductor regions.

摘要翻译： 提供了具有由包括半导体材料的量子阱形成的横向互连或通孔的半导体器件。 由包括第一半导体材料组合物的量子阱形成的横向互连（17,18,19）。 包括第二材料类型的第一半导体区域（11,12,13）形成为与横向互连（17,18,19）相邻。 包括第二材料类型的第二半导体区域（23,24,26）与横向互连（17,18,19）相邻，使得横向互连（17,18,19）将第一（11,12,13） ）和第二（23,24,26）个半导体区域。 第一（17,18,19）和第二（23,24,26）半导体区域具有基本相等的第一量化能级。 横向互连（17,18,19）具有能够与第一（11,12,13）和第二（23,24,26）半导体区域的量化能级对准的第一量化能级。

公开(公告)号：US5270225A

公开(公告)日：1993-12-14

申请号：US838955

申请日：1992-02-21

申请人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani

发明人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani

IPC分类号： H01L29/06 ,  H01L21/331 ,  H01L29/68 ,  H01L29/737 ,  H01L21/265

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L29/66318 ,  H01L29/7376

摘要： A resonant tunneling semiconductor device having two large bandgap barrier layers (12, 14) separated by a quantum well (13) is provided. The two barriers (12,14) and the quantum well (13) are formed between first and second semiconductor layers (11, 16) of a first conductivity type. A monolayer (17) of material having a different bandgap than the quantum well material is provided in the quantum well thereby lowering the ground state energy level of the quantum well. Alternatively, monolayers (18, 19) having a different bandgap than that of the first and second semiconductor layers (11, 16) are formed in the first and second semiconductor layers, respectively, outside of the quantum well (13).

摘要翻译： 提供了具有由量子阱（13）分离的两个大的带隙势垒层（12,14）的共振隧穿半导体器件。 在第一导电类型的第一和第二半导体层（11,16）之间形成两个势垒（12,14）和量子阱（13）。 在量子阱中提供具有与量子阱材料不同的带隙的材料的单层（17），从而降低量子阱的基态能级。 或者，在第一和第二半导体层中分别在量子阱（13）的外部形成具有与第一和第二半导体层（11,16）不同的带隙的单层（18,19）。

公开(公告)号：US5160982A

公开(公告)日：1992-11-03

申请号：US895228

申请日：1992-06-08

申请人： Herbert Goronkin ,  X. Theodore Zhu ,  George N. Maracas

发明人： Herbert Goronkin ,  X. Theodore Zhu ,  George N. Maracas

IPC分类号： H01L29/12

CPC分类号： B82Y10/00 ,  H01L29/122

摘要： An enhanced mobility semiconductor comprising a host quantum well having at least two charge carrier barrier layers of a wide bandgap material, each of the two charge carrier barrier layers being separated by a conducting region containing charge carriers is provided. A number of phonon barriers having a predetermined thickness are formed in the conducting region wherein the predetermined thickness is chosen to allow charge carrier tunneling through the phonon barriers.

摘要翻译： 提供了一种增强的迁移率半导体，其包括具有宽带隙材料的至少两个电荷载流子阻挡层的主量子阱，两个电荷载流子阻挡层中的每一个由包含电荷载流子的导电区域分开。 在导电区域中形成许多具有预定厚度的声子屏障，其中选择预定厚度以允许载流子隧道穿过声子屏障。

公开(公告)号：US5142341A

公开(公告)日：1992-08-25

申请号：US681261

申请日：1991-04-08

申请人： Herbert Goronkin ,  X. Theodore Zhu

发明人： Herbert Goronkin ,  X. Theodore Zhu

IPC分类号： H01L29/06 ,  H01L29/15 ,  H01L29/66

CPC分类号： H01L29/155

摘要： An enhanced conductivity structure comprising first and second coupled quantum well channel layers spaced from each other by a barrier layer of predetermined thickness is provided. The barrier layer and other supporting layers comprise a first material type, while the first and second quantum wells comprise a second material type having a narrower bandgap than the first material type. Each of the quantum wells is thin to confine current flow to the plane of the quantum wells. First and second spacer layers of the first material type are formed adjacent to each of the quantum wells, and planar doping layers are provided on each of the spacer layers. First and second buffer layers of the first material type are formed adjacent to each of the spacer layers.

摘要翻译： 提供了包括通过预定厚度的阻挡层彼此隔开的第一和第二耦合量子阱沟道层的增强的导电结构。 阻挡层和其它支撑层包括第一材料类型，而第一和第二量子阱包括具有比第一材料类型更窄的带隙的第二材料类型。 每个量子阱都很薄，以将电流限制到量子阱的平面。 第一材料类型的第一和第二间隔层形成为与每个量子阱相邻，并且平面掺杂层设置在每个间隔层上。 第一材料类型的第一和第二缓冲层形成为与每个间隔层相邻。

公开(公告)号：US4340900A

公开(公告)日：1982-07-20

申请号：US50272

申请日：1979-06-19

申请人： Herbert Goronkin

发明人： Herbert Goronkin

IPC分类号： H01L23/14 ,  H01L23/36 ,  H01L29/861 ,  H01L29/93 ,  H01L29/06 ,  H01L23/02 ,  H01L29/90

CPC分类号： H01L29/93 ,  H01L23/142 ,  H01L23/36 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/3011

摘要： An oxide passivated mesa epitaxial diode with an integral heat sink, and a process by which it may be fabricated. The passivation layer of highly pure thermally grown SiO.sub.2 is formed over the mesa walls in the region of the pn junction without causing a reaction between the contact metals and their surroundings during the high temperature environment imposed during thermal growth. The heat sink is deposited after the SiO.sub.2 passivation has been grown, replacing a polycrystalline silicon layer beneath the mesa formation which was used as a temporary structural support. Dopant, to form the pn junction, is introduced into the silicon wafer after the formation of the passivation layer but before the heat sink is deposited.

摘要翻译： 具有整体散热器的氧化物钝化的台面外延二极管，以及可以制造的方法。 在热生长期间施加的高温环境中，在pn结区域的台面壁上形成高纯度热生长SiO 2的钝化层，而不会在接触金属及其周围环境之间引起反应。 在SiO 2钝化生长之后沉积散热器，代替用作临时结构支撑的台面形成之下的多晶硅层。 形成pn结的掺杂剂在形成钝化层之后但在沉积散热片之前被引入到硅晶片中。