公开(公告)号：US5412224A

公开(公告)日：1995-05-02

申请号：US894989

申请日：1992-06-08

申请人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani

发明人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani

IPC分类号： H01L29/80 ,  H01L29/10 ,  H01L29/778 ,  H01L29/161 ,  H01L29/205 ,  H01L29/225

CPC分类号： H01L29/1029 ,  H01L29/1054 ,  H01L29/778

摘要： A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by barrier layers comprising wide bandgap material (18) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a N-type drain region (22b). Each channel is also coupled to an N-type source region (25b). With appropriate gate bias on a gate electrode (17), quantized energy levels in the channels (12, 14, 16) are aligned to provide self-doping by electrons in the valence band of the P-channel (14) moving to the conduction band of the N-channels (12, 16) providing peak channel conductivity. At higher gate bias, one of the N-channels (12) becomes non-conductive creating a negative resistance region.

摘要翻译： 提供了具有由包括宽带隙材料（18）的阻挡层隔开的多个垂直堆叠通道（12,14,16）的场效应半导体器件。 通道（12,14,16）形成在宽带隙缓冲层（11）上，每个通道耦合有N型漏区（22b）。 每个通道也耦合到N型源极区域（25b）。 在栅电极（17）上具有合适的栅极偏置，通道（12,14,16）中的量化能级被对准以提供通过移动到导通的P沟道（14）的价带中的电子的自掺杂 带宽的N沟道（12,16）提供峰值沟道导电性。 在较高的栅极偏压下，N沟道（12）中的一个变为不导通，产生负电阻区域。

公开(公告)号：US5289014A

公开(公告)日：1994-02-22

申请号：US930958

申请日：1992-08-17

申请人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani ,  X. Theodore Zhu

发明人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani ,  X. Theodore Zhu

IPC分类号： H01L21/20 ,  H01L29/06 ,  H01L29/76 ,  H01L29/80 ,  H01L29/161 ,  H01L29/205

CPC分类号： B82Y10/00 ,  H01L29/7613

摘要： A semiconductor device having a vertical interconnect or via stacked formed by quantum well comprising a semiconductor material is provided. A first semiconductor device (11) having a current carrying region (19) is formed in a first horizontal plane. A second semiconductor device (12) having a current carrying region (29) is formed in a second horizontal plane. Each of the current carrying regions have a first quantized energy level that is substantially equal. A semiconductor via (31) couples the current carrying region (19) of the first semiconductor device (11) to the current carrying region (29) of the second device (12), wherein the semiconductor via (31) has a first quantized energy level capable of alignment with the quantized energy levels of the current carrying regions (19, 29) of the first and second semiconductor devices (11,12).

摘要翻译： 提供了具有由包括半导体材料的量子阱形成的垂直互连或通过层叠形成的半导体器件。 具有载流区域（19）的第一半导体器件（11）形成在第一水平面中。 具有载流区域（29）的第二半导体器件（12）形成在第二水平面中。 每个电流承载区域具有基本相等的第一量化能级。 半导体通孔（31）将第一半导体器件（11）的载流区域（19）耦合到第二器件（12）的载流区域（29），其中半导体通孔（31）具有第一量子化能 能够与第一和第二半导体器件（11,12）的载流区域（19,29）的量化能级对准。

公开(公告)号：US5221849A

公开(公告)日：1993-06-22

申请号：US899439

申请日：1992-06-16

申请人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani ,  X. Theodore Zhu

发明人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani ,  X. Theodore Zhu

IPC分类号： H01L29/80 ,  H01L27/06 ,  H01L29/10 ,  H01L29/772

CPC分类号： H01L27/0605 ,  H01L29/1029 ,  H01L29/772

摘要： A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by independent gate electrodes (13, 15) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a drain electrode (21). Each channel is also coupled to a source electrode (25-26). The quantum well channels (12, 14, 16) and quantum well gates (13, 15) are separated from each other by barrier layers (18) of a wide bandgap semiconductor material.

摘要翻译： 提供具有由独立的栅电极（13,15）分离的多个垂直堆叠的通道（12,14,16）的场效半导体器件。 通道（12,14,16）形成在宽带隙缓冲层（11）上，每个通道与漏电极（21）相连。 每个通道也耦合到源电极（25-26）。 量子阱通道（12,14,16）和量子阱栅极（13,15）通过宽带隙半导体材料的阻挡层（18）彼此分离。

公开(公告)号：US5355005A

公开(公告)日：1994-10-11

申请号：US971118

申请日：1992-11-04

申请人： Saied Tehrani ,  Jun Shen ,  Herbert Goronkin ,  Robert Smith

发明人： Saied Tehrani ,  Jun Shen ,  Herbert Goronkin ,  Robert Smith

IPC分类号： H01L27/092 ,  H01L21/338 ,  H01L21/8238 ,  H01L27/06 ,  H01L27/095 ,  H01L29/778 ,  H01L29/812 ,  H01L31/072 ,  H01L29/06 ,  H01L29/80 ,  H01L31/109

CPC分类号： H01L27/0605 ,  H01L27/095 ,  H01L29/7783

摘要： A complementary field effect structure having a first field effect device (26) including a quantum well having a first channel (12). A first doping region (14) is positioned adjacent to a first quantum well and a first gate electrode (29) is positioned so that the first doping region (14) is between the first gate electrode (29) and the first channel (12) . A second field effect device (37) includes a second channel (22) and a second doping region (19) positioned adjacent to the second channel. A second gate electrode (31) is positioned over the second channel (22) so that the second channel (22) is between the second gate electrode (31) and the second doping region (19). An interconnect electrically couples the first gate electrode (29) to the second gate electrode (31).

摘要翻译： 具有包括具有第一通道（12）的量子阱的第一场效应器件（26）的互补场效应结构。 第一掺杂区域（14）定位成与第一量子阱相邻，并且第一栅电极（29）被定位成使得第一掺杂区域（14）在第一栅电极（29）和第一沟道（12）之间， 。 第二场效应装置（37）包括邻近第二通道定位的第二通道（22）和第二掺杂区域（19）。 第二栅电极（31）位于第二通道（22）上方，使得第二通道（22）位于第二栅极电极（31）和第二掺杂区域（19）之间。 互连将第一栅电极（29）电耦合到第二栅电极（31）。

公开(公告)号：US5298763A

公开(公告)日：1994-03-29

申请号：US970456

申请日：1992-11-02

申请人： Jun Shen ,  Saied Tehrani ,  Herbert Goronkin

发明人： Jun Shen ,  Saied Tehrani ,  Herbert Goronkin

IPC分类号： H01L29/32 ,  H01L29/161 ,  H01L29/205

CPC分类号： H01L29/32

摘要： A semiconductor structure that provides intrinsic doping from native defects is provided. A quantum well including a narrow bandgap material (11, 14) having a low concentration of native defects is sandwiched between two wide bandgap spacer layers (12, 20, 17, 15). The spacer layers (12, 20, 17, 15) have a low concentration of native defects. At least one doping region (13, 16) having a high concentration of native defects positioned adjacent to one of the undoped spacer layers (12, 17).

摘要翻译： 提供了一种从天然缺陷提供内在掺杂的半导体结构。 包括具有低浓度天然缺陷的窄带隙材料（11,14）的量子阱夹在两个宽带隙间隔层（12,20,17,15）之间。 间隔层（12,20,17,15）具有低浓度的天然缺陷。 至少一个掺杂区域（13,16）具有与未掺杂的间隔层（12,17）中的一个相邻定位的高浓度的天然缺陷。

公开(公告)号：US5280180A

公开(公告)日：1994-01-18

申请号：US932116

申请日：1992-08-19

申请人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani ,  Raymond K. Tsui ,  X. Theodore Zhu

发明人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani ,  Raymond K. Tsui ,  X. Theodore Zhu

IPC分类号： H01L21/20 ,  H01L23/535 ,  H01L29/06 ,  H01L29/80 ,  H01L29/161 ,  H01L29/205

CPC分类号： H01L23/535 ,  H01L2924/0002

摘要： A semiconductor device having a lateral interconnect or via formed by quantum well comprising a semiconductor material is provided. The lateral interconnect (17, 18, 19) formed by a quantum well comprising a first semiconductor material composition. A first semiconductor region (11, 12, 13) comprising a second material type is formed adjacent to the lateral interconnect (17, 18, 19). A second semiconductor region (23, 24, 26) comprising the second material type is adjacent to the lateral interconnect (17, 18, 19) so that the lateral interconnect (17, 18, 19) separates the first (11, 12, 13) and second (23, 24, 26) semiconductor regions. The first (17, 18, 19) and second (23, 24, 26) semiconductor regions have a first quantized energy level that is substantially equal. The lateral interconnect (17, 18, 19) has a first quantized energy level capable of alignment with the quantized energy levels of the first (11, 12, 13) and second (23, 24, 26) semiconductor regions.

摘要翻译： 提供了具有由包括半导体材料的量子阱形成的横向互连或通孔的半导体器件。 由包括第一半导体材料组合物的量子阱形成的横向互连（17,18,19）。 包括第二材料类型的第一半导体区域（11,12,13）形成为与横向互连（17,18,19）相邻。 包括第二材料类型的第二半导体区域（23,24,26）与横向互连（17,18,19）相邻，使得横向互连（17,18,19）将第一（11,12,13） ）和第二（23,24,26）个半导体区域。 第一（17,18,19）和第二（23,24,26）半导体区域具有基本相等的第一量化能级。 横向互连（17,18,19）具有能够与第一（11,12,13）和第二（23,24,26）半导体区域的量化能级对准的第一量化能级。

公开(公告)号：US5270225A

公开(公告)日：1993-12-14

申请号：US838955

申请日：1992-02-21

申请人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani

发明人： Herbert Goronkin ,  Jun Shen ,  Saied Tehrani

IPC分类号： H01L29/06 ,  H01L21/331 ,  H01L29/68 ,  H01L29/737 ,  H01L21/265

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L29/66318 ,  H01L29/7376

摘要： A resonant tunneling semiconductor device having two large bandgap barrier layers (12, 14) separated by a quantum well (13) is provided. The two barriers (12,14) and the quantum well (13) are formed between first and second semiconductor layers (11, 16) of a first conductivity type. A monolayer (17) of material having a different bandgap than the quantum well material is provided in the quantum well thereby lowering the ground state energy level of the quantum well. Alternatively, monolayers (18, 19) having a different bandgap than that of the first and second semiconductor layers (11, 16) are formed in the first and second semiconductor layers, respectively, outside of the quantum well (13).

摘要翻译： 提供了具有由量子阱（13）分离的两个大的带隙势垒层（12,14）的共振隧穿半导体器件。 在第一导电类型的第一和第二半导体层（11,16）之间形成两个势垒（12,14）和量子阱（13）。 在量子阱中提供具有与量子阱材料不同的带隙的材料的单层（17），从而降低量子阱的基态能级。 或者，在第一和第二半导体层中分别在量子阱（13）的外部形成具有与第一和第二半导体层（11,16）不同的带隙的单层（18,19）。

公开(公告)号：US08228715B2

公开(公告)日：2012-07-24

申请号：US12789838

申请日：2010-05-28

申请人： Thomas Andre ,  Saied Tehrani ,  Jon Slaughter ,  Nicholas Rizzo

发明人： Thomas Andre ,  Saied Tehrani ,  Jon Slaughter ,  Nicholas Rizzo

IPC分类号： G11C11/00 ,  G11C11/14

CPC分类号： G11C11/1657 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： An apparatus and method of programming a spin-torque magnetoresistive memory array includes a metal reset line positioned near each of a plurality of magnetoresistive bits and configured to set the plurality of magnetoresistive memory elements to a known state by generating a magnetic field when an electrical current flows through it. A spin torque transfer current is then applied to selected ones of the magnetoresistive bits to switch the selected bit to a programmed state. In another mode of operation, a resistance of the plurality of bits is sensed prior to generating the magnetic field. The resistance is again sensed after the magnetic field is generated and the data represented by the initial state of each bit is determined from the resistance change. A spin torque transfer current is then applied only to those magnetoresistive bits having a resistance different from prior to the magnetic field being applied.

摘要翻译： 编程自旋转矩磁阻存储器阵列的装置和方法包括位于多个磁阻位中的每一个附近的金属复位线，并且被配置为通过在电流下产生磁场将多个磁阻存储元件设置为已知状态 流过它 然后将自旋转矩传递电流施加到选定的磁阻位，以将所选位切换到编程状态。 在另一种操作模式中，在产生磁场之前感测到多个位的电阻。 在产生磁场之后再次感测电阻，并且根据电阻变化确定由每个位的初始状态表示的数据。 然后，自旋转矩传递电流仅施加于具有与施加磁场之前不同的电阻的那些磁阻位。

公开(公告)号：US06205052B1

公开(公告)日：2001-03-20

申请号：US09422447

申请日：1999-10-21

申请人： Jon Slaughter ,  Jing Shi ,  Eugene Chen ,  Saied Tehrani

发明人： Jon Slaughter ,  Jing Shi ,  Eugene Chen ,  Saied Tehrani

IPC分类号： G11C1115

CPC分类号： H01L43/08 ,  B82Y25/00 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268

摘要： An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) includes a fixed ferromagnetic layer (26). A second electrode (18) is included and comprises a free ferromagnetic layer (28). A spacer layer (16) is located between the fixed ferromagnetic layer (26) and the free ferromagnetic (28) layer, the spacer layer (16). At least one additional layer (20 & 22) is provided between the base metal layer (13) and the spacer layer (16). The base metal layer (13) or at least one of the layers positioned between the base metal layer (13) and the spacer layer (16) having an x-ray amorphous structure such that a reduced topological coupling strength between the free ferromagnetic layer (28) and the fixed ferromagnetic layer (26) is achieved.

摘要翻译： 一种用于磁性元件的改进和新颖的器件和制造方法，更具体地，包括第一电极（14），第二电极（18）和间隔层（16）的磁性元件（10）。 第一电极（14）包括固定的铁磁层（26）。 包括第二电极（18）并且包括自由铁磁层（28）。 间隔层（16）位于固定铁磁层（26）和自由铁磁（28）层间隔层（16）之间。 至少一个附加层（20和22）设置在基底金属层（13）和间隔层（16）之间。 基底金属层（13）或位于基底金属层（13）和间隔层（16）之间的层中的至少一层具有x射线非晶结构，使得游离铁磁层（ 28）和固定铁磁层（26）。

公开(公告)号：US06579625B1

公开(公告)日：2003-06-17

申请号：US09695467

申请日：2000-10-24

申请人： Bradley N. Engel ,  Nicholas D. Rizzo ,  Jason A. Janesky ,  Saied Tehrani

发明人： Bradley N. Engel ,  Nicholas D. Rizzo ,  Jason A. Janesky ,  Saied Tehrani

IPC分类号： G11B5127

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/32 ,  H01L27/222 ,  H01L43/08 ,  Y10T428/1171 ,  Y10T428/12465 ,  Y10T428/12639 ,  Y10T428/24942 ,  Y10T428/31

摘要： A magnetic layer (46) of a magnetoelectronics element (40) is provided that has a first sub-element layer (48) and a second sub-element layer (50). The first sub-element layer (48) is configured to have a first area and the second sub-element layer (50) is configured to have a second area that is less than the first area.

摘要翻译： 提供了具有第一子元件层（48）和第二子元件层（50）的磁电元件（40）的磁性层（46）。 第一子元件层（48）被配置为具有第一区域，并且第二子元件层（50）被配置为具有小于第一区域的第二区域。