公开(公告)号：US20080020263A1

公开(公告)日：2008-01-24

申请号：US11863725

申请日：2007-09-28

申请人： Asako SATOH ,  Nobuyasu Negishi ,  Hirofumi Kan ,  Katsumi Ichikawa ,  Shinichi Onodera ,  Masakazu Kudo

发明人： Asako SATOH ,  Nobuyasu Negishi ,  Hirofumi Kan ,  Katsumi Ichikawa ,  Shinichi Onodera ,  Masakazu Kudo

IPC分类号： H01M4/86 ,  H01M8/10

CPC分类号： H01M8/1011 ,  H01M8/0271 ,  H01M8/04208 ,  H01M8/1023 ,  H01M8/1039 ,  H01M8/1067 ,  Y02E60/523

摘要： A fuel cell using a liquid fuel containing methanol with a concentration of more than 50 mol % and no more than 100 mol %, the fuel cell includes a cathode catalyst layer, an anode catalyst layer to which a vaporized component of the liquid fuel is supplied, and a proton conductive membrane provided between the cathode catalyst layer and the anode catalyst layer, wherein a ratio (L:L0) of a thickness L to a thickness L0 is more than 1:1 and no more than 5:1 assuming a total thickness of the cathode catalyst layer and the anode catalyst layer to be represented by L and a thickness of the proton conductive membrane to be represented by L0.

摘要翻译： 一种使用含有浓度大于50摩尔％且不超过100摩尔％的甲醇的液体燃料的燃料电池，所述燃料电池包括阴极催化剂层，供给液体燃料的蒸发成分的阳极催化剂层 以及设置在阴极催化剂层和阳极催化剂层之间的质子传导膜，其中厚度L与厚度L 0的比例（L：L <0 < 假定阴极催化剂层和阳极催化剂层的总厚度由L表示并且质子传导膜的厚度由L 0表示，则大于1：1且不大于5：1， / SUB>。

公开(公告)号：US20080014491A1

公开(公告)日：2008-01-17

申请号：US11858162

申请日：2007-09-20

申请人： Akira Yajima ,  Yumiko Takizawa ,  Asako Satoh ,  Hirofumi Kan

发明人： Akira Yajima ,  Yumiko Takizawa ,  Asako Satoh ,  Hirofumi Kan

IPC分类号： H01M8/04 ,  H01M8/10 ,  H01M4/86

CPC分类号： H01M8/04149 ,  H01M8/1011 ,  H01M2008/1095 ,  Y02E60/523

摘要： A fuel cell comprises a proton conductive membrane, an anode catalyst layer provided on one surface of the proton conductive membrane, and a cathode catalyst layer provided partly on another surface of the proton conductive membrane, wherein water generated in the cathode catalyst layer is supplied to the anode catalyst layer through the proton conductive membrane, and the fuel cell further comprises a water-diffusing portion which is provided on the another surface of the proton conductive membrane and is in contact with the cathode catalyst layer.

摘要翻译： 燃料电池包括质子传导膜，设置在质子传导膜的一个表面上的阳极催化剂层和部分地设置在质子传导膜的另一个表面上的阴极催化剂层，其中在阴极催化剂层中产生的水被供应到 通过质子传导膜的阳极催化剂层，并且燃料电池还包括设置在质子传导膜的另一个表面上并与阴极催化剂层接触的水扩散部分。

公开(公告)号：US07045957B2

公开(公告)日：2006-05-16

申请号：US10223378

申请日：2002-08-20

申请人： Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

发明人： Minoru Niigaki ,  Shoichi Uchiyama ,  Hirofumi Kan

IPC分类号： H01J40/06

CPC分类号： H01J43/08 ,  H01J1/34 ,  H01J40/06 ,  H01J2201/3421 ,  H01J2231/50021 ,  Y10T428/30

摘要： In the polycrystal diamond thin film in accordance with the present invention, the average particle size is at least 1.5 μm and, in a Raman spectrum obtained by Raman spectroscopy, a peak intensity near a wave number of 1580 cm−1 has a ratio of 0.2 or less with respect to a peak intensity near a wave number of 1335 cm−1. The photocathode and electron tube in accordance with the present invention comprise the polycrystal diamond thin film as a light-absorbing layer.

摘要翻译： 在本发明的多晶金刚石薄膜中，平均粒径为1.5μm以上，通过拉曼光谱法获得的拉曼光谱中，波数为1580cm -1以上的峰强度， SUP>相对于波数为1335cm -1附近的峰值强度具有0.2或更小的比率。 根据本发明的光电阴极和电子管包括多晶金刚石薄膜作为光吸收层。

公开(公告)号：US20050186435A1

公开(公告)日：2005-08-25

申请号：US11066318

申请日：2005-02-25

申请人： Shucheng Chu ,  Hirofumi Kan

发明人： Shucheng Chu ,  Hirofumi Kan

IPC分类号： B32B9/04 ,  B32B15/18 ,  H01L33/26

CPC分类号： H01L33/26

摘要： A light emitting device (10) comprises a β-FeSi2 film (2) provided on a front surface of a Si substrate (1), first electrode (3) provided on a rear-surface side of the Si substrate (1), second electrodes 4 provided on a front-surface side of the β-FeSi2 film (2). The β-FeSi2 film (2) has the conductivity different from that of Si substrate (1). Between the Si substrate (1) and β-FeSi2 film (2), a pn junction is formed. The β-FeSi2 film (2) functions as a luminescent layer. Its luminescence properties are not influenced very much by the type and purity of the substrate.

摘要翻译： 发光器件（10）包括设置在Si衬底（1）的前表面上的β-FeSi 2膜（2），设置在Si衬底的背面侧的第一电极（3） Si衬底（1），设置在β-FeSi 2膜（2）的前表面侧的第二电极4。 β-FeSi 2膜（2）具有与Si衬底（1）不同的导电性。 在Si衬底（1）和β-FeSi 2膜（2）之间形成pn结。 β-FeSi 2膜（2）用作发光层。 其发光性质不受基材的类型和纯度的太大影响。

公开(公告)号：US20050151140A1

公开(公告)日：2005-07-14

申请号：US10506508

申请日：2003-03-06

申请人： Takayoshi Honma ,  Hiroshi Tsuchiya ,  Hirofumi Kan

发明人： Takayoshi Honma ,  Hiroshi Tsuchiya ,  Hirofumi Kan

IPC分类号： H01L23/473 ,  A01G7/04 ,  H01S5/024 ,  H01L33/00

CPC分类号： A01G7/045 ,  H01L23/473 ,  H01L2924/0002 ,  Y02P60/149 ,  Y10T29/49158 ,  H01L2924/00

摘要： Guard electrodes 2 which are electrically connected with a conductive portion of a cooling water passage 23 through connection lines 3 are respectively provided in the middle of a water inlet pipe 1 connected with a water inlet master pipe 10 and a water outlet pipe 6 connected with a water outlet master pipe 13 in M pieces of semiconductor laser units 4. At this time, since the guard electrode 2 has a potential equal to the conductive portion of the cooling water passage 23, the electric current hardly flows between the guard electrode 2 and the conductive portion of the cooling water passage 23. As a result, rusting is inhibited in the M pieces of semiconductor laser units 4, and a clogged piping is prevented in the cooling water passage 23.

摘要翻译： 通过连接线3与冷却水通道23的导电部分电连接的保护电极2分别设置在与进水主管10和出水管6连接的进水管1的中部， M个半导体激光器单元4中的出水主管13。 此时，由于保护电极2具有与冷却水通路23的导电部相等的电位，因此电流几乎不在保护电极2与冷却水通路23的导电部之间流动。 结果，M片半导体激光器单元4中的生锈被抑制，并且在冷却水通道23中阻止了堵塞的管道。

公开(公告)号：US20050036531A1

公开(公告)日：2005-02-17

申请号：US10892475

申请日：2004-07-16

申请人： Hirofumi Kan ,  Akihiro Sone ,  Takunori Taira ,  Yasunori Furukawa

发明人： Hirofumi Kan ,  Akihiro Sone ,  Takunori Taira ,  Yasunori Furukawa

IPC分类号： H01S3/16 ,  H01S3/042 ,  H01S3/06 ,  H01S3/091 ,  H01S3/094 ,  H01S3/0941 ,  H01S3/10 ,  H01S3/113

CPC分类号： H01S3/0941 ,  H01S3/042 ,  H01S3/0604 ,  H01S3/094038 ,  H01S3/1611 ,  H01S3/1671

摘要： A laser device 1 is provided with: a solid sate laser medium made of GdVO4 or YVO4 to which Nd3+ is added, having first and second surfaces 10A, 10B facing each other; a high reflection film 12 formed on the first surface of the laser medium for reflecting light having a wavelength in a first wavelength range 880±5 nm and in a second wavelength range from 910 nm to 916 nm; a reflecting means 20 placed in a manner where an optical resonator of which the resonance Q-value for light having a wavelength in the second wavelength range is greater than the resonance Q-value for light of every wavelength in a third wavelength range from 1060 nm to 1065 nm is formed together with the high reflection film and the laser medium is positioned within the resonator; and an excitation light source 22 that outputs light having a wavelength in the first wavelength range for exciting the laser medium. Laser device 1 is formed so that light from the excitation light source is guided into the resonator in a direction different from the optical axis direction of the resonator, and enters into the laser medium. As a result, a solid state laser device having a high light-emission efficiency can be implemented.

摘要翻译： 激光装置1设置有：添加有Nd + 3+的GdVO 4或YVO 4制成的固体激光介质，具有彼此面对的第一和第二表面10A，10B; 形成在激光介质的第一表面上的高反射膜12，用于反射具有880±5nm的第一波长范围和910nm至916nm的第二波长范围的波长的光; 一个反射装置20，以这样的方式放置：其中具有第二波长范围的波长的光的谐振Q值大于来自1060nm的第三波长范围内的每个波长的光的谐振Q值的光学谐振器 与高反射膜一起形成1065nm，激光介质位于谐振器内; 以及激励光源22，其输出具有用于激发激光介质的第一波长范围的波长的光。 激光装置1形成为使得来自激发光源的光沿着与谐振器的光轴方向不同的方向被引导到谐振器中，并进入激光介质。 结果，可以实现具有高发光效率的固态激光器件。

公开(公告)号：US06831341B2

公开(公告)日：2004-12-14

申请号：US10416703

申请日：2003-05-14

申请人： Hirofumi Kan ,  Minoru Niigaki ,  Masashi Ohta ,  Yasufumi Takagi ,  Shoichi Uchiyama

发明人： Hirofumi Kan ,  Minoru Niigaki ,  Masashi Ohta ,  Yasufumi Takagi ,  Shoichi Uchiyama

IPC分类号： H01J134

CPC分类号： H01J31/507 ,  H01J1/34 ,  H01J40/06 ,  H01J43/08 ,  H01J2231/50021

摘要： Ultraviolet light incident from the side of a surface layer 5 passes through the surface layer 5 to reach an optical absorption layer 4. Light which reaches the optical absorption layer 4 is absorbed within the optical absorption layer 4, and photoelectrons are generated within the optical absorption layer 4. Photoelectrons diffuse within the optical absorption layer 4, and reach the interface between the optical absorption layer 4 and the surface layer 5. Because the energy band is curved in the vicinity of the interface between the optical absorption layer 4 and surface layer 5, the energy of the photoelectrons is larger than the electron affinity in the surface layer 5, and so photoelectrons are easily ejected to the outside. Here, the optical absorption layer 4 is formed from an Al0.3Ga0.7N layer with an Mg content concentration of not less than 2×1019 cm−3 but not more than 1×1020 cm−3, so that a solar-blind type semiconductor photocathode 1 with high quantum efficiency is obtained.

摘要翻译： 从表面层5侧入射的紫外光通过表层5到达光吸收层4.到达光吸收层4的光被吸收在光吸收层4内，并且在光吸收中产生光电子 光电子在光吸收层4内扩散，并到达光吸收层4和表面层5之间的界面。因为能带在光吸收层4和表面层5之间的界面附近弯曲 ，光电子的能量大于表面层5中的电子亲和力，因此光电子容易被排出到外部。 这里，光吸收层4由Mg含量浓度不小于2×10 19 cm -3但不大于1×10 20 cm -3的Al 0.3 Ga 0.7 N层形成，因此 得到具有高量子效率的太阳能型半导体光电阴极1。

公开(公告)号：US06804275B2

公开(公告)日：2004-10-12

申请号：US09773510

申请日：2001-02-02

申请人： Hirofumi Miyajima ,  Hirofumi Kan

发明人： Hirofumi Miyajima ,  Hirofumi Kan

IPC分类号： H01L2336

CPC分类号： H01S5/02423 ,  H01L23/473 ,  H01L2924/0002 ,  H01S5/02268 ,  H01S5/4031 ,  H01S5/405 ,  H05K7/20254 ,  H01L2924/00

摘要： A semiconductor laser stack apparatus 1 comprises three semiconductor lasers 2a to 2c, two copper plates 3a and 3b, two lead plates 4a and 4b, a supply tube 5, a discharge tube 6, four insulating members 7a to 7d, and three heat sinks 10a to 10c. Here, the heat sink 10a to 10c is formed by a lower planar member 12 having an upper face formed with a supply water path groove portion 22, an intermediate planar member 14 formed with a plurality of water guiding holes 38, and an upper planar member 16 having a lower face formed with a discharge water path groove portion 30 which are successively stacked one upon another, whereas their contact surfaces are joined together.

摘要翻译： 半导体激光器堆叠装置1包括三个半导体激光器2a至2c，两个铜板3a和3b，两个引线板4a和4b，供给管5，放电管6，四个绝缘构件7a至7d以及三个散热片10a 到10c。 这里，散热片10a至10c由具有形成有供水路径槽部22的上表面的下平面构件12，形成有多个导水孔38的中间平面构件14和上平面构件 16，其下表面形成有排水路径槽部分30，它们彼此依次堆叠，而它们的接触表面接合在一起。

公开(公告)号：US5109358A

公开(公告)日：1992-04-28

申请号：US423203

申请日：1989-10-17

申请人： Yoshihiko Mizushima ,  Kazutoshi Nakajima ,  Toru Hirohata ,  Takashi Iida ,  Yoshihisa Warashina ,  Kenichi Sugimoto ,  Hirofumi Kan

发明人： Yoshihiko Mizushima ,  Kazutoshi Nakajima ,  Toru Hirohata ,  Takashi Iida ,  Yoshihisa Warashina ,  Kenichi Sugimoto ,  Hirofumi Kan

IPC分类号： G11C13/04 ,  G02F3/00 ,  G11C11/42 ,  H03K3/42

CPC分类号： G11C11/42

摘要： An optical flip-flop circuit which includes an electrical power source for providing an electrical signal, a light-receiving element provided in series with the power source for switching the electrical signal in response to an optical signal, a light-emitting element for emitting the optical signal in response to the electric signal, an electrical signal path between the light-receiving element and the light-emitting element, whereby the electrical signal passes from the power source to the light-emitting element in response to the optical signal received by the light-receiving element, a light path for directing the optical signal from the light-emitting element to the light-receiving element, wherein the light path and the electrical signal path form a signal loop through which a signal circulates, said circulating signal comprising the electrical signal through the electrical signal path portion of the signal loop and the optical signal through the light path portion of the signal loop, and input/output means for providing an input optical signal to the light-receiving element and for emitting a portion of the optical signal directed by the light path.

摘要翻译： 一种光学触发器电路，其包括用于提供电信号的电源，与电源串联设置的光接收元件，用于响应光信号切换电信号;发光元件，用于发射 响应于电信号的光信号，光接收元件和发光元件之间的电信号路径，由此电信号响应于由光接收元件和发光元件接收的光信号而从电源传递到发光元件 光接收元件，用于将光信号从发光元件引导到光接收元件的光路，其中光路和电信号路径形成信号循环通过的信号回路，所述循环信号包括 通过信号环路的电信号路径部分的电信号和通过信号的光路部分的光信号 环路和输入/输出装置，用于向光接收元件提供输入光信号，并用于发射由光路引导的光信号的一部分。

公开(公告)号：US3961996A

公开(公告)日：1976-06-08

申请号：US515616

申请日：1974-10-17

申请人： Hirofumi Namizaki ,  Hirofumi Kan

发明人： Hirofumi Namizaki ,  Hirofumi Kan

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01L7/36 ,  H01L7/38

CPC分类号： H01S5/20 ,  H01S5/2203 ,  H01S5/2059 ,  Y10S148/039 ,  Y10S148/05 ,  Y10S148/051 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/145

摘要： N type Ga.sub.0.7 Al.sub.0.3 As, N type GaAs, N type Ga.sub.0.7 Al.sub.0.3 As and P type Ga.sub.1-0.3 Al.sub.0.3 As are epitaxially grown on an N type GaAs substrate in the named order one after another to form superposed layers. A selected portion of the uppermost layer is etched away along with those portions of the following two layers and one part of the lowermost layer located below the selected uppermost layer portion. P type Ga.sub.1-0.3 Al.sub.0.3 As highly doped with zinc is epitaxially grown to fill the removed portions of the layers. Then the zinc is diffused into the adjacent portions of the layers to form a radiative recombination region of a layer on that portion of the GaAs layer converted to the P type.