POLISHING ENDPOINT DETECTION METHOD AND POLISHING ENDPOINT DETECTION APPARATUS
    61.
    发明申请
    POLISHING ENDPOINT DETECTION METHOD AND POLISHING ENDPOINT DETECTION APPARATUS 有权
    抛光端点检测方法和抛光端点检测装置

    公开(公告)号:US20110081829A1

    公开(公告)日:2011-04-07

    申请号:US12897973

    申请日:2010-10-05

    IPC分类号: B24B49/00

    CPC分类号: B24B37/013 B24B37/042

    摘要: Method and apparatus for detecting an accurate polishing endpoint of a substrate based on a change in polishing rate are provided. The method includes: applying a light to the surface of the substrate and receiving a reflected light from the substrate; obtaining a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; selecting at least one pair of spectral profiles, including a latest spectral profile, from the plurality of spectral profiles obtained; calculating a difference in the reflection intensity at a predetermined wavelength between the spectral profiles selected; determining an amount of change in the reflection intensity from the difference; and determining a polishing endpoint based on the amount of change.

    摘要翻译: 提供了用于基于抛光速率的变化来检测基板的精确抛光终点的方法和装置。 该方法包括:将光施加到衬底的表面并接收来自衬底的反射光; 以预定的时间间隔获得多个光谱轮廓,每个光谱轮廓指示反射光的每个波长处的反射强度; 从所获得的多个光谱分布中选择至少一对光谱分布,包括最新的光谱分布; 计算所选择的光谱轮廓之间的预定波长处的反射强度的差; 从所述差确定反射强度的变化量; 以及基于变化量确定抛光端点。

    Processing end point detection method, polishing method,and polishing apparatus
    62.
    发明申请
    Processing end point detection method, polishing method,and polishing apparatus 有权
    处理终点检测方法,抛光方法和抛光装置

    公开(公告)号:US20100015889A1

    公开(公告)日:2010-01-21

    申请号:US12311560

    申请日:2007-10-05

    IPC分类号: B24B49/04 B24B49/12 B24B37/04

    摘要: The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

    摘要翻译: 本发明涉及通过计算工件(抛光对象)的表面的特性值来检测处理终点的定时(例如,抛光停止,改变抛光条件)的处理终点检测方法,例如 底物。 该方法包括:基于频谱波形,使用基准工件或模拟计算,产生指示处理终点处的反射强度与波长之间的关系的光谱波形,选择局部最大值的波长和局部最小值的局部最小值 反射强度,从所选择的波长的反射强度计算相对于要处理的表面的特征值,将作为处理终点的处理终点处的特征值的特征时间变化设定为特征值 并且通过在工件的加工期间检测特征点来检测工件的加工终点。

    Peripheral processing method and method of manufacturing a semiconductor device
    63.
    发明授权
    Peripheral processing method and method of manufacturing a semiconductor device 有权
    外围加工方法及其制造方法

    公开(公告)号:US07638439B2

    公开(公告)日:2009-12-29

    申请号:US11604786

    申请日:2006-11-28

    IPC分类号: H01L21/31

    摘要: A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher than oxidation rate of native oxide film on a surface of the silicon-based substrate, thereby forming a first oxide film along the periphery, the first oxide film being thicker than the native oxide film. A method of manufacturing a semiconductor device includes: forming an insulating film on a frontside and periphery of a silicon-based substrate; forming a workpiece by selectively etching away the insulating film to expose a portion of the frontside of the silicon-based substrate; forming a first oxide film at an exposed part of the silicon-based substrate, the exposed part being formed in the insulating film of the periphery during the selective etching; depositing a metal film on the frontside of the workpiece after the first oxide film is formed; and allowing the metal film to react with the portion of the frontside of the silicon-based substrate by heat treatment.

    摘要翻译: 周边加工方法包括:通过局部加热包括硅基底材的工件的周边中的至少一种,并选择性地向外围供应反应活化物质,允许外围的氧化速率高于自然氧化膜的氧化速率 在硅基基板的表面上,由此沿着周边形成第一氧化膜,第一氧化膜比天然氧化膜厚。 一种制造半导体器件的方法包括:在硅基衬底的前面和周围形成绝缘膜; 通过选择性地蚀刻掉绝缘膜以暴露硅基衬底的前侧的一部分来形成工件; 在硅基基板的暴露部分形成第一氧化物膜,在选择性蚀刻期间,暴露部分形成在周边的绝缘膜中; 在形成第一氧化膜之后,在工件的前侧沉积金属膜; 并通过热处理使金属膜与硅基基板的前侧的部分反应。

    Polishing apparatus and polishing method
    64.
    发明申请
    Polishing apparatus and polishing method 有权
    抛光设备和抛光方法

    公开(公告)号:US20090017730A1

    公开(公告)日:2009-01-15

    申请号:US11665001

    申请日:2005-10-12

    IPC分类号: B24B1/00 B24B21/00

    摘要: A polishing apparatus has a polishing tape (21), a supply reel (22) for supplying the polishing tape (21) to a contact portion (30) at which the polishing tape (21) is brought into contact with a notch portion (11) of a substrate (10), and a take-up reel (23) for winding up the polishing tape (21) from the contact portion (30). The polishing apparatus also has a first guide portion (24) having as guide surface (241) for supplying the polishing tape (21) directly to the contact portion (30), and a second guide portion (25) having a guide surface for supplying the polishing tape (21) tot the take-up reel (23). The guide surface (241) of the first guide portion (24) and/or the guide surface of the second guide portion (25) has a shape corresponding to a shape of the notch portion (11) of the substrate (10).

    摘要翻译: 抛光装置具有研磨带(21),用于将研磨带(21)供给到研磨带(21)与切口部(11)接触的接触部(30)的供带盘(22) )和用于从所述接触部分(30)卷绕所述研磨带(21)的卷取卷轴(23)。 抛光装置还具有第一引导部分(24),其具有用于将研磨带(21)直接供应到接触部分(30)的引导表面(241),以及具有引导表面的第二引导部分(25) 研磨带(21)卷绕在卷取卷轴(23)上。 第一引导部(24)的引导面(241)和/或第二引导部(25)的引导面具有与基板(10)的切口部(11)的形状对应的形状。

    Method of manufacturing semiconductor device
    65.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US07413989B2

    公开(公告)日:2008-08-19

    申请号:US10944866

    申请日:2004-09-21

    IPC分类号: H01L21/302

    摘要: A semiconductor wafer including an underlying layer including an insulating film having at least one recess therein and a metallic material layer formed over a top surface of the underlying layer and filling the recess, on a semiconductor substrate, is subjected to a polishing treatment while supplying a basic CMP slurry containing metal ions on the semiconductor wafer to at least partially remove the metallic material layer. Then, an organic acid which chelates the metal ions is added to the basic CMP slurry, and polishing is conducted, using the organic acid-added CMP slurry, until a surface of the insulating film is exposed.

    摘要翻译: 在半导体基板上包括具有至少一个凹部的绝缘膜和在下层的顶面上形成的填充凹部的金属材料层的下层的半导体晶片经受抛光处理,同时供给 在半导体晶片上含有金属离子的基本CMP浆料以至少部分地去除金属材料层。 然后,向碱性CMP浆料中加入螯合金属离子的有机酸,并使用添加有机酸的CMP浆料进行研磨,直至暴露出绝缘膜的表面。

    Substrate processing method and semiconductor device manufacturing method
    66.
    发明申请
    Substrate processing method and semiconductor device manufacturing method 审中-公开
    基板加工方法和半导体器件制造方法

    公开(公告)号:US20070000873A1

    公开(公告)日:2007-01-04

    申请号:US11449686

    申请日:2006-06-09

    摘要: There is disclosed a substrate processing method of polishing a peripheral portion of a substrate to-be-processed by sliding a polishing member and the peripheral portion of the substrate to each other to remove a SiN film deposited on the peripheral portion of the substrate. The method includes supplying a solution containing at least one of polyethyleneimine and tetramethylammonium hydroxide to a slide portion between the peripheral portion of the substrate and the polishing member.

    摘要翻译: 公开了通过将研磨部件和基板的周边部分彼此滑动以去除沉积在基板的周边部分上的SiN膜来研磨待处理基板的周边部分的基板处理方法。 该方法包括将含有聚乙烯亚胺和四甲基氢氧化铵中的至少一种的溶液供应到基材的周边部分和抛光部件之间的滑动部分。

    Method of judging residual film by optical measurement

    公开(公告)号:US06984532B2

    公开(公告)日:2006-01-10

    申请号:US10396310

    申请日:2003-03-26

    IPC分类号: H01L21/66

    摘要: A method of judging a residual film on a sample by an optical measurement, the sample including a first metal film whose reflectance is changed depending on a wavelength of measuring light, and an insulating film formed above the first metal film, and the residual film being a second metal film above the insulating film, the method comprising irradiating the sample with a measuring light so as to measure a change in intensity of light reflected from the sample depending on the wavelength of the measuring light, thereby obtaining a reflectance spectrum curve, and dividing the reflectance spectrum curve into a plurality of wavelength regions so as to judge presence or absence of the second metal film above the insulating film depending on a waveform in each of the wavelength regions of the reflectance spectrum curve.

    Polishing apparatus with improved exhaust
    69.
    发明授权
    Polishing apparatus with improved exhaust 失效
    具有改善排气的抛光装置

    公开(公告)号:US5653623A

    公开(公告)日:1997-08-05

    申请号:US357176

    申请日:1994-12-13

    CPC分类号: B24B53/017

    摘要: A polishing apparatus for polishing a surface of a workpiece such as a semiconductor wafer is installed in a clean room. The polishing apparatus includes a polishing section having a turntable with an abrasive cloth mounted on an upper surface thereof, a top ring for supporting the workpiece to be polished and pressing the workpiece against the abrasive cloth, a loading section for loading the workpiece to be polished onto the top ring, and an unloading section for unloading the workpiece which has been polished from the top ring. A cover covers an entire area of movement of the top ring including the polishing section, the loading section and the unloading section. An exhaust duct discharges air of an interior space of the cover to an outside of an installation space of the polishing apparatus.

    摘要翻译: 用于抛光诸如半导体晶片的工件的表面的抛光装置安装在洁净室中。 抛光装置包括具有安装在其上表面上的研磨布的转台的抛光部分,用于支撑待抛光工件的顶环,并将工件压靠在研磨布上,用于将待抛光工件加载的装载部分 以及用于卸载已经从顶环抛光的工件的卸载部分。 盖子覆盖包括抛光部分,装载部分和卸载部分在内的顶环的整个运动区域。 排气管将盖的内部空间的空气排出到抛光装置的安装空间的外部。