公开(公告)号：US20050176253A1

公开(公告)日：2005-08-11

申请号：US10944866

申请日：2004-09-21

申请人： Atsushi Shigeta ,  Kazuhiko Ida ,  Yoshitaka Matsui

发明人： Atsushi Shigeta ,  Kazuhiko Ida ,  Yoshitaka Matsui

IPC分类号： B24B7/00 ,  B24B9/00 ,  B24B37/00 ,  C09G1/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/4763 ,  H01L21/768

CPC分类号： H01L21/02074 ,  B24B37/044 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684

摘要： A semiconductor wafer including an underlying layer including an insulating film having at least one recess therein and a metallic material layer formed over a top surface of the underlying layer and filling the recess, on a semiconductor substrate, is subjected to a polishing treatment while supplying a basic CMP slurry containing metal ions on the semiconductor wafer to at least partially remove the metallic material layer. Then, an organic acid which chelates the metal ions is added to the basic CMP slurry, and polishing is conducted, using the organic acid-added CMP slurry, until a surface of the insulating film is exposed.

摘要翻译： 在半导体基板上包括具有至少一个凹部的绝缘膜和在下层的顶面上形成的填充凹部的金属材料层的下层的半导体晶片经受抛光处理，同时供给 在半导体晶片上含有金属离子的基本CMP浆料以至少部分地去除金属材料层。 然后，向碱性CMP浆料中加入螯合金属离子的有机酸，并使用添加有机酸的CMP浆料进行研磨，直至暴露出绝缘膜的表面。

公开(公告)号：US07005382B2

公开(公告)日：2006-02-28

申请号：US10694890

申请日：2003-10-29

申请人： Kazuo Nishimoto ,  Tatsuaki Sakano ,  Akihiro Takemura ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Naoto Miyashita ,  Atsushi Shigeta ,  Yoshitaka Matsui ,  Kazuhiko Ida

发明人： Kazuo Nishimoto ,  Tatsuaki Sakano ,  Akihiro Takemura ,  Masayuki Hattori ,  Nobuo Kawahashi ,  Naoto Miyashita ,  Atsushi Shigeta ,  Yoshitaka Matsui ,  Kazuhiko Ida

IPC分类号： B24B1/00

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/02024

摘要： Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium. The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound other than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.

摘要翻译： 提供了用于化学机械抛光的水分散体，其平坦化待抛光的表面并具有高的储存稳定性，当抛光不同材料的表面时选择性优异的化学机械抛光工艺以及半导体器件的生产工艺。 第一种水性分散体含有水溶性季铵盐，无机酸盐，磨粒和水性介质。 第二水性分散体至少包含水溶性季铵盐，除水溶性季铵盐以外的其它碱性有机化合物，无机酸盐，水溶性聚合物，磨料颗粒和水性介质。 第二水性分散体由通过将水溶性季铵盐和无机酸盐混合到水性介质中而得到的第一水分散体（I）和第二水分散体（II） 水溶性聚合物和除了水溶性季铵盐之外的另一种碱性有机化合物转化成水性介质。 磨粒在至少一种水分散体中含有。

公开(公告)号：US07413989B2

公开(公告)日：2008-08-19

申请号：US10944866

申请日：2004-09-21

申请人： Atsushi Shigeta ,  Kazuhiko Ida ,  Yoshitaka Matsui

发明人： Atsushi Shigeta ,  Kazuhiko Ida ,  Yoshitaka Matsui

IPC分类号： H01L21/302

CPC分类号： H01L21/02074 ,  B24B37/044 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684

摘要： A semiconductor wafer including an underlying layer including an insulating film having at least one recess therein and a metallic material layer formed over a top surface of the underlying layer and filling the recess, on a semiconductor substrate, is subjected to a polishing treatment while supplying a basic CMP slurry containing metal ions on the semiconductor wafer to at least partially remove the metallic material layer. Then, an organic acid which chelates the metal ions is added to the basic CMP slurry, and polishing is conducted, using the organic acid-added CMP slurry, until a surface of the insulating film is exposed.

摘要翻译： 在半导体基板上包括具有至少一个凹部的绝缘膜和在下层的顶面上形成的填充凹部的金属材料层的下层的半导体晶片经受抛光处理，同时供给 在半导体晶片上含有金属离子的基本CMP浆料以至少部分地去除金属材料层。 然后，向碱性CMP浆料中加入螯合金属离子的有机酸，并使用添加有机酸的CMP浆料进行研磨，直至暴露出绝缘膜的表面。

公开(公告)号：US08554356B2

公开(公告)日：2013-10-08

申请号：US12311560

申请日：2007-10-05

申请人： Noburu Shimizu ,  Shinro Ohta ,  Koji Maruyama ,  Yoichi Kobayashi ,  Ryuichiro Mitani ,  Shunsuke Nakai ,  Atsushi Shigeta

发明人： Noburu Shimizu ,  Shinro Ohta ,  Koji Maruyama ,  Yoichi Kobayashi ,  Ryuichiro Mitani ,  Shunsuke Nakai ,  Atsushi Shigeta

IPC分类号： G06F19/00 ,  G01B11/00 ,  B24B49/00 ,  B24B51/00 ,  G05B19/406 ,  G05B19/4065 ,  G01B11/06 ,  B24B49/16 ,  B24B49/12

CPC分类号： B24B49/04 ,  B24B37/013 ,  B24B49/12 ,  B24B49/16 ,  B24D7/12 ,  G01B11/0675 ,  G01N21/55 ,  G01N21/9501 ,  G05B19/406 ,  G05B19/4065 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

摘要翻译： 处理终点检测方法通过计算诸如基板的工件（抛光对象）的表面的特性值来检测处理终点的定时（例如，抛光停止，改变抛光条件）。 该方法包括：基于频谱波形，使用基准工件或模拟计算，产生指示处理终点处的反射强度与波长之间的关系的光谱波形，选择局部最大值的波长和局部最小值的局部最小值 反射强度，从所选择的波长的反射强度计算相对于要处理的表面的特征值，将作为处理终点的处理终点处的特征值的特征时间变化设定为特征值 并且通过在工件的加工期间检测特征点来检测工件的加工终点。

公开(公告)号：US08506362B2

公开(公告)日：2013-08-13

申请号：US12667891

申请日：2008-07-08

申请人： Dai Fukushima ,  Atsushi Shigeta ,  Tamami Takahashi ,  Kenya Ito ,  Masaya Seki ,  Hiroaki Kusa

发明人： Dai Fukushima ,  Atsushi Shigeta ,  Tamami Takahashi ,  Kenya Ito ,  Masaya Seki ,  Hiroaki Kusa

IPC分类号： B24B7/26

CPC分类号： B24B21/002 ,  B24B9/065 ,  H01L21/02021

摘要： A polishing apparatus includes a substrate holder configured to hold and rotate a substrate, a press pad configured to press a polishing tape having a polishing surface against a bevel portion of the substrate held by the substrate holder, and a feeding mechanism configured to cause the polishing tape to travel in its longitudinal direction. The press pad includes a hard member having a pressing surface for pressing the bevel portion of the substrate through the polishing tape, and at least one elastic member for pressing the hard member against the bevel portion of the substrate through the belt-shaped polishing tool.

摘要翻译： 抛光装置包括：基板保持器，其构造成保持和旋转基板;压垫，其构造成将具有抛光表面的抛光带压靠在由基板保持器保持的基板的斜面部分上;以及馈送机构，其构造成使抛光 胶带沿其纵向行进。 压垫包括具有用于通过研磨带挤压基板的斜面部分的按压表面的硬质部件和用于通过带状抛光工具将硬质部件压靠在基板的斜面部分上的至少一个弹性部件。

公开(公告)号：US08114776B2

公开(公告)日：2012-02-14

申请号：US12781393

申请日：2010-05-17

申请人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

发明人： Hajime Eda ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Takatoshi Ono ,  Satoko Seta

IPC分类号： H01L21/302

CPC分类号： H01L21/31053 ,  C09G1/02 ,  H01L21/3081 ,  H01L21/76224

摘要： In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the silicon film is formed on an upper layer of the polysilicon film, and slurry for the chemical mechanical polishing contains cerium oxide particles, a surface active agent, and resin particles having a cationic or anionic functional group.

摘要翻译： 在利用在半导体衬底上形成的硅膜作为阻挡膜进行化学机械抛光来制造用于平坦化氧化硅膜的半导体器件的方法中，在上层形成用于使硅膜表面亲水化的表面改性膜 的多晶硅膜，并且用于化学机械抛光的浆料含有氧化铈颗粒，表面活性剂和具有阳离子或阴离子官能团的树脂颗粒。

公开(公告)号：US20090239373A1

公开(公告)日：2009-09-24

申请号：US12477332

申请日：2009-06-03

申请人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Hirotaka Shida ,  Yukiteru Matsui ,  Atsushi Shigeta ,  Shinichi Hirasawa ,  Hirokazu Kato ,  Masako Kinoshita ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/768 ,  H01L21/306

CPC分类号： H01L21/7681 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/76835

摘要： A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

摘要翻译： 化学机械抛光方法包括使用包含具有表面官能团的聚合物颗粒和水溶性聚合物的浆料来抛光有机膜。

公开(公告)号：US20090156000A1

公开(公告)日：2009-06-18

申请号：US12332802

申请日：2008-12-11

申请人： Yukiteru MATSUI ,  Atsushi Shigeta ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru MATSUI ,  Atsushi Shigeta ,  Yoshikuni Tateyama ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/283

CPC分类号： H01L21/02118 ,  C09G1/02 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/31058 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76835

摘要： A method for manufacturing a semiconductor device is provided, which includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a first slurry containing first resin particles and a water-soluble polymer to planarize a surface of the organic film precursor, and polishing the organic film precursor where the surface is planarized using a second slurry containing second resin particles and a water-soluble polymer to leave the organic film precursor in the recess, thereby exposing the insulating film, an average particle diameter of the second resin particles being smaller than that of the first resin particles.

摘要翻译： 提供了一种制造半导体器件的方法，其包括通过将含有溶剂和有机组分的溶液涂覆在位于半导体衬底上方并具有凹槽的绝缘膜上的溶液形成涂膜，在第一温度下烘烤该涂膜 不能实现有机成分的交联以获得有机膜前体，使用含有第一树脂粒子和水溶性聚合物的第一浆料对有机膜前体进行研磨，使有机膜前体的表面平坦化， 膜前体，其中使用含有第二树脂颗粒和水溶性聚合物的第二浆料将表面平坦化，以使凹陷中的有机膜前体离开，从而暴露绝缘膜，第二树脂颗粒的平均粒径小于 的第一树脂颗粒。

公开(公告)号：US07452819B2

公开(公告)日：2008-11-18

申请号：US10855529

申请日：2004-05-28

申请人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

发明人： Yukiteru Matsui ,  Gaku Minamihaba ,  Yoshikuni Tateyama ,  Hiroyuki Yano ,  Atsushi Shigeta

IPC分类号： H01L21/302

CPC分类号： H01L21/76808 ,  C09G1/02 ,  H01L21/31058 ,  H01L21/31144 ,  H01L27/10867

摘要： There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 μm, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 μm, and a surfactant having a hydrophilic moiety.

摘要翻译： 公开了一种有机膜的化学机械抛光方法，包括在半导体衬底上形成有机膜，将形成在半导体衬底上的有机膜与附着在转台上的抛光垫接触，并将浆料滴落到抛光垫上以抛光 所述有机膜，所述浆料选自第一浆料和第二浆料，所述第一浆料包含具有选自阴离子官能团，阳离子官能团，两性的官能团的树脂颗粒 官能团和非离子官能团，并且一次粒径为0.05-5μm，第一浆料的pH为2-8，第二浆料包含一次粒径为0.05〜 5μm和具有亲水部分的表面活性剂。

公开(公告)号：US20070178701A1

公开(公告)日：2007-08-02

申请号：US11730890

申请日：2007-04-04

申请人： Gen Toyota ,  Atsushi Shigeta ,  Hiroyuki Yano

发明人： Gen Toyota ,  Atsushi Shigeta ,  Hiroyuki Yano

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02043 ,  B24B9/065 ,  B24B37/02 ,  H01L21/02021 ,  H01L21/30625

摘要： There is disclosed a method of processing a substrate, which comprises applying a surfactant or a water soluble polymer agent onto a surface of a substrate to be processed, and sliding a circumferential portion of the substrate and a polishing member against each other to polish the circumferential portion of the substrate.

摘要翻译： 公开了一种处理基材的方法，该方法包括将表面活性剂或水溶性聚合物试剂涂布到待加工基材的表面上，并将基材的圆周部分和抛光部件相互滑动以使周向 部分基板。