公开(公告)号：US06869888B1

公开(公告)日：2005-03-22

申请号：US09901704

申请日：2001-07-11

申请人： Marina V. Plat ,  Ramkumar Subramanian ,  Christopher F. Lyons ,  Bhanwar Singh

发明人： Marina V. Plat ,  Ramkumar Subramanian ,  Christopher F. Lyons ,  Bhanwar Singh

IPC分类号： H01L21/027 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/768

CPC分类号： H01L21/76808 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02134 ,  H01L21/0276 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/76825

摘要： A method for forming a semiconductor device is described. The method comprises forming a first layer over a semiconductor substrate. At least one hole is formed through the first layer. A bottom anti-reflective coating (BARC) layer is formed in the at least one hole. The BARC layer is exposed to an electron beam (e-beam) so that the BARC layer reaches a flow temperature in the at least one hole. An etch is performed to form a trench in the first layer and over the at least one hole, wherein the BARC layer in the at least one hole acts as an etch resistant layer during the etch.

摘要翻译： 对半导体装置的形成方法进行说明。 该方法包括在半导体衬底上形成第一层。 通过第一层形成至少一个孔。 在至少一个孔中形成底部抗反射涂层（BARC）层。 BARC层暴露于电子束（电子束），使得BARC层在至少一个孔中达到流动温度。 执行蚀刻以在第一层中和在至少一个孔上形成沟槽，其中至少一个孔中的BARC层在蚀刻期间用作耐蚀刻层。

公开(公告)号：US06845345B1

公开(公告)日：2005-01-18

申请号：US09777435

申请日：2001-02-06

申请人： Bhanwar Singh ,  Michael K. Templeton ,  Ramkumar Subramanian

发明人： Bhanwar Singh ,  Michael K. Templeton ,  Ramkumar Subramanian

IPC分类号： G06F11/00

CPC分类号： G05B23/0283

摘要： A system for analyzing diagnostic information associated with a spin track is provided. The system includes one or more analysis systems that collect diagnostic information from one or more spin tracks. The system further includes one or more maintenance systems that schedule routine and/or special maintenance based on analysis of the diagnostic information. An alternative aspect of the system further includes one or more control information systems that generate of feedback control information employed in adapting the processes performed by the spin track.

摘要翻译： 提供了一种用于分析与自旋轨迹相关联的诊断信息的系统。 该系统包括从一个或多个自旋轨道收集诊断信息的一个或多个分析系统。 该系统还包括一个或多个维护系统，其基于对诊断信息的分析来调度例行和/或特殊维护。 该系统的另一方面还包括一​​个或多个控制信息系统，其产生用于适应由旋转轨迹执行的处理的反馈控制信息。

公开(公告)号：US06844206B1

公开(公告)日：2005-01-18

申请号：US10645363

申请日：2003-08-21

申请人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

发明人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC分类号： G03F7/20 ,  H01L21/00 ,  G03C5/00

CPC分类号： G03F7/70341

摘要： A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.

摘要翻译： 公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。 已知的光栅结构被构建在衬底上。 折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

公开(公告)号：US06829380B1

公开(公告)日：2004-12-07

申请号：US09642959

申请日：2000-08-21

申请人： Bryan K. Choo ,  Bhanwar Singh ,  Sanjay K. Yedur

发明人： Bryan K. Choo ,  Bhanwar Singh ,  Sanjay K. Yedur

IPC分类号： G06K900

CPC分类号： G03F7/70616 ,  G03F7/70441 ,  G03F7/70625

摘要： A system for evaluating optical proximity corrected (OPC) designs is provided. The system includes an analysis system for performing measurements relating to a segment of a feature. The analysis system is configured to determine a first image for the segment of the feature based upon the measurements. The analysis system determines a second image to facilitate analysis of the first image and evaluates OPC designs based upon comparisons of the first and second image.

摘要翻译： 提供了一种用于评估光学邻近校正（OPC）设计的系统。 该系统包括用于执行与特征的段相关的测量的分析系统。 分析系统被配置为基于测量来确定特征的段的第一图像。 分析系统确定第二图像以便于分析第一图像，并且基于第一和第二图像的比较来评估OPC设计。

公开(公告)号：US06813574B1

公开(公告)日：2004-11-02

申请号：US09992599

申请日：2001-11-06

申请人： Sanjay K. Yedur ,  Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

发明人： Sanjay K. Yedur ,  Bhanwar Singh ,  Bharath Rangarajan ,  Ramkumar Subramanian

IPC分类号： G01N2186

CPC分类号： H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Patterned layers in an integrated circuit (IC) or other device are aligned in conjunction with the detection of the topology of the layers. The topology can be used to determine the location of a metrology mark and/or to compensate for a horizontal shift in the apparent location of the metrology mark. Precise detection of topography can be achieved without physical contact with the IC or other device with an atomic force microscope.

摘要翻译： 集成电路（IC）或其他设备中的图案层与层的拓扑结构的检测结合对齐。 拓扑结构可用于确定计量标记的位置和/或补偿计量标记的表观位置的水平位移。 无需使用原子力显微镜与IC或其他器件物理接触即可实现精确的形貌检测。

公开(公告)号：US06808591B1

公开(公告)日：2004-10-26

申请号：US10021531

申请日：2001-12-12

申请人： Khoi A. Phan ,  Bharath Rangarajan ,  Christopher F. Lyons ,  Steven C. Avanzino ,  Ramkumar Subramanian ,  Bhanwar Singh ,  Cyrus E. Tabery

发明人： Khoi A. Phan ,  Bharath Rangarajan ,  Christopher F. Lyons ,  Steven C. Avanzino ,  Ramkumar Subramanian ,  Bhanwar Singh ,  Cyrus E. Tabery

IPC分类号： H01L21302

CPC分类号： H01L21/67253 ,  H01L21/32136

摘要： A systems and methodologies are provided for metal overetch control. Metal overetch processes are controlled by utilizing overetch device models to determine overetch times or overetch endpoints. The systems and methodologies reduce the need for manual testing and manual overetch characterization. An overetch system includes a metal etcher, a target device and an overetch controller. The target device is located in or on the metal etcher. The overetch controller is coupled to the metal etcher. The overetch controller controls overetching of the target device by the metal etcher. The overetch controller includes an overetch time controller, a set of etch control models and a control system.

摘要翻译： 提供了用于金属过程控制的系统和方法。 通过利用过滤设备模型来确定金属过蚀刻过程以确定过蚀刻时间或过程延伸端点。 系统和方法减少了手动测试和手动过程表征的需要。 一种过蚀系统包括金属蚀刻机，目标装置和过程控制器。 目标设备位于金属蚀刻机中或其上。 该过程控制器耦合到金属蚀刻器。 过程控制器通过金属蚀刻器控制目标器件的过蚀刻。 该过程控制器包括一个过时延时间控制器，一组蚀刻控制模型和一个控制系统。

公开(公告)号：US06758612B1

公开(公告)日：2004-07-06

申请号：US10050471

申请日：2002-01-16

申请人： Cyrus E. Tabery ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

发明人： Cyrus E. Tabery ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC分类号： G03D500

CPC分类号： G03F7/3028

摘要： A system for regulating (e.g., terminating) a development process is provided. The system includes one or more light sources, each light source directing light to one or more patterns and/or gratings on a wafer. Light reflected from the patterns and/or gratings is collected by a measuring system, which processes the collected light. The collected light is indicative of the dimensions achieved at respective portions of the wafer. The measuring system provides development related data to a processor that determines the acceptability of the development of the respective portions of the wafer. The collected light may be analyzed by scatterometry and/or reflectometry systems to produce development related data and the development related data may be examined to determine whether a development process end point has been reached, at which time the system can control the development process and terminate development.

摘要翻译： 提供了一种用于调节（例如，终止）显影过程的系统。 该系统包括一个或多个光源，每个光源将光引导到晶片上的一个或多个图案和/或光栅。 从图案和/或光栅反射的光被测量系统收集，该系统处理所收集的光。 所收集的光指示在晶片的相应部分处获得的尺寸。 该测量系统将开发相关数据提供给处理器，该处理器确定晶片各个部分的可接受性。 所收集的光可以通过散射法和/或反射测量系统进行分析以产生开发相关数据，并且可以检查开发相关数据以确定是否已经达到开发过程终点，此时系统可以控制开发过程并终止 发展。

公开(公告)号：US06721046B1

公开(公告)日：2004-04-13

申请号：US09903885

申请日：2001-07-12

申请人： Arvind Halliyal ,  Bhanwar Singh ,  Ramkumar Subramanian

发明人： Arvind Halliyal ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC分类号： G01B1100

CPC分类号： H01L21/28185 ,  G01N21/4788 ,  G01N21/55 ,  G01N21/8422 ,  G01N2021/4126 ,  G01N2021/4735 ,  G01N2021/8416 ,  H01L21/28202 ,  H01L22/26 ,  H01L29/518

摘要： A system for regulating nitrided gate oxide layer formation is provided. The system includes one or more light sources, each light source directing light to one or more nitrided gate oxide layers being deposited and/or formed on a wafer. Light reflected from the nitrided gate oxide layers is collected by a measuring system, which processes the collected light. The collected light is indicative of the nitrogen concentration of the respective nitrided gate oxide layers on the wafer. The measuring system provides nitrogen concentration related data to a processor that determines the nitrogen concentration of the respective nitrided gate oxide layers on the wafer. The system also includes one or more nitrided gate oxide layer formers where a nitride gate oxide former corresponds to a respective portion of the wafer and provides for nitrided gate oxide layer formation thereon. The processor selectively controls the nitrided gate oxide layer formers to regulate nitrided gate oxide layer formation on the respective nitrided gate oxide layer formations on the wafer, and particularly to control, in situ, the amount of nitrogen incorporated into the gate oxide layer.

摘要翻译： 提供了一种用于调节氮化栅氧化层形成的系统。 该系统包括一个或多个光源，每个光源将光引导到在晶片上沉积和/或形成的一个或多个氮化栅极氧化物层。 从氮化栅氧化层反射的光被测量系统收集，该系统处理所收集的光。 所收集的光表示晶片上相应的氮化栅极氧化物层的氮浓度。 测量系统向处理器提供氮浓度相关数据，该处理器确定晶片上相应的氮化栅极氧化物层的氮浓度。 该系统还包括一个或多个氮化栅极氧化物层形成器，其中氮化物栅极氧化物形成体对应于晶片的相应部分并且在其上形成氮化的栅极氧化物层。 处理器选择性地控制氮化栅极氧化物层形成器来调节晶片上相应的氮化栅极氧化物层形成物上的氮化栅极氧化物层形成，并且特别地原位控制掺入到栅极氧化物层中的氮的量。

公开(公告)号：US06641963B1

公开(公告)日：2003-11-04

申请号：US09845239

申请日：2001-04-30

申请人： Bharath Rangarajan ,  Michael K. Templeton ,  Bhanwar Singh ,  Ramkumar Subramanian

发明人： Bharath Rangarajan ,  Michael K. Templeton ,  Bhanwar Singh ,  Ramkumar Subramanian

IPC分类号： G03F900

CPC分类号： G03F7/38 ,  G03B27/52

摘要： A system for regulating temperature of a post exposure baking process is provided. The system includes one or more light sources, each light source directing light to one or more gratings being baked and hardened on a wafer. Light reflected from the gratings is collected by a measuring system, which processes the collected light. Light passing through the gratings may similarly be collected by the measuring system, which processes the collected light. The collected light is indicative of the baking and hardening of the respective portions of the wafer. The measuring system provides baking and hardening related data to a processor that determines the baking and hardening of the respective portions of the wafer. The system also includes a plurality of temperature controlling devices, each such device corresponds to a respective portion of the wafer and provides for the heating and/or cooling thereof. The processor selectively controls the temperature controlling devices so as to regulate temperature of the respective portions of the wafer.

摘要翻译： 提供了一种用于调节后曝光烘烤处理温度的系统。 该系统包括一个或多个光源，每个光源将光引导到在晶片上被烘烤和硬化的一个或多个光栅。 从光栅反射的光被测量系统收集，该系统处理收集的光。 通过光栅的光可以类似地由处理所收集的光的测量系统收集。 所收集的光表示晶片的各个部分的烘烤和硬化。 测量系统向处理器提供烘烤和硬化相关数据，该处理器确定晶片的相应部分的烘烤和硬化。 该系统还包括多个温度控制装置，每个这样的装置对应于晶片的相应部分并提供其加热和/或冷却。 处理器选择性地控制温度控制装置，以调节晶片各部分的温度。

公开(公告)号：US06630361B1

公开(公告)日：2003-10-07

申请号：US09894701

申请日：2001-06-28

申请人： Bhanwar Singh ,  Bharath Rangarajan ,  Michael K. Templeton ,  Ramkumar Subramanian ,  Cristina Cheung

发明人： Bhanwar Singh ,  Bharath Rangarajan ,  Michael K. Templeton ,  Ramkumar Subramanian ,  Cristina Cheung

IPC分类号： H01L2100

CPC分类号： H01L22/20 ,  G01N21/47 ,  G01N21/9501 ,  G01N21/956 ,  H01L21/67253

摘要： A system for regulating a gaseous phase chemical trim process is provided. The system includes one or more light sources, each light source directing light to one or more features and/or gratings on a wafer. Light reflected from the features and/or gratings is collected by a measuring system, which processes the collected light. The collected light is indicative of the dimensions achieved at respective portions of the wafer. The measuring system provides trimming related data to a processor that determines the acceptability of the trimming of the respective portions of the wafer. The system also includes one or more trimming devices, each such device corresponding to a portion of the wafer and providing for the trimming thereof. The processor selectively controls the trimming devices to regulate trimming of the portions of the wafer.

摘要翻译： 提供了一种用于调节气相化学修饰过程的系统。 该系统包括一个或多个光源，每个光源将光引导到晶片上的一个或多个特征和/或光栅。 从特征和/或光栅反射的光由测量系统收集，该系统处理收集的光。 所收集的光指示在晶片的相应部分处获得的尺寸。 测量系统向处理器提供修剪相关数据，该处理器确定了晶片各部分的修整的可接受性。 该系统还包括一个或多个修整装置，每个这样的装置对应于晶片的一部分并提供其修剪。 处理器选择性地控制修整装置来调节对晶片的部分的修整。