公开(公告)号：US10756678B2

公开(公告)日：2020-08-25

申请号：US16250889

申请日：2019-01-17

Applicant: pSemi Corporation

Inventor： Jonathan James Klaren ,  David Kovac ,  Eric S. Shapiro ,  Christopher C. Murphy ,  Robert Mark Englekirk ,  Keith Bargroff ,  Tero Tapio Ranta

IPC: H03F1/22 ,  H03F3/195 ,  H03F3/213 ,  H03F3/24 ,  H03F1/30 ,  H03F1/56 ,  H03F3/193

Abstract: Bias circuits and methods for silicon-based amplifier architectures that are tolerant of supply and bias voltage variations, bias current variations, and transistor stack height, and compensate for poor output resistance characteristics. Embodiments include power amplifiers and low-noise amplifiers that utilize a cascode reference circuit to bias the final stages of a cascode amplifier under the control of a closed loop bias control circuit. The closed loop bias control circuit ensures that the current in the cascode reference circuit is approximately equal to a selected multiple of a known current value by adjusting the gate bias voltage to the final stage of the cascode amplifier. The final current through the cascode amplifier is a multiple of the current in the cascode reference circuit, based on a device scaling factor representing the relative sizes of the transistor devices in the cascode amplifier and in the cascode reference circuit.

公开(公告)号：US20180337043A1

公开(公告)日：2018-11-22

申请号：US15600588

申请日：2017-05-19

Applicant: pSemi Corporation

Inventor： Robert Mark Englekirk ,  Keith Bargroff ,  Christopher C. Murphy ,  Tero Tapio Ranta ,  Simon Edward Willard

IPC: H01L21/02 ,  H01L21/8234 ,  H01L21/762 ,  H01L21/322 ,  H01L21/265 ,  H01L29/06

CPC classification number: H01L21/02658 ,  H01L21/265 ,  H01L21/3226 ,  H01L21/7624 ,  H01L21/823481 ,  H01L27/1218 ,  H01L29/0649

Abstract: Modified silicon-on-insulator (SOI) substrates having a trap rich layer, and methods for making such modifications. The modified regions eliminate or manage accumulated charge that would otherwise arise because of the interaction of the underlying trap rich layer and active layer devices undergoing transient changes of state, thereby eliminating or mitigating the effects of such accumulated charge on non-RF integrated circuitry fabricated on such substrates. Embodiments retain the beneficial characteristics of SOI substrates with a trap rich layer for RF circuitry requiring high linearity, such as RF switches, while avoiding the problems of a trap rich layer for circuitry that is sensitive to accumulated charge effects caused by the presence of the trap rich layer, such as non-RF analog circuitry and amplifiers (including power amplifiers and low noise amplifiers).

公开(公告)号：US20180316327A1

公开(公告)日：2018-11-01

申请号：US16025873

申请日：2018-07-02

Applicant: pSemi Corporation

Inventor： Tero Tapio Ranta ,  Keith Bargroff ,  Christopher C. Murphy ,  Robert Mark Englekirk

IPC: H03G3/30 ,  H03F3/21 ,  H03F3/19 ,  H03F1/56 ,  H03F1/30

Abstract: Temperature compensation circuits and methods for adjusting one or more circuit parameters of a power amplifier (PA) to maintain approximately constant Gain versus time during pulsed operation sufficient to substantially offset self-heating of the PA. Some embodiments compensate for PA Gain “droop” due to self-heating using a Sample and Hold (S&H) circuit. The S&H circuit samples and holds an initial temperature of the PA at commencement of a pulse. Thereafter, the S&H circuit generates a continuous measurement that corresponds to the temperature of the PA during the remainder of the pulse. A Gain Control signal is generated that is a function of the difference between the initial temperature and the operating temperature of the PA as the PA self-heats for the duration of the pulse. The Gain Control signal is applied to one or more adjustable or tunable circuits within a PA to offset the Gain droop of the PA.

公开(公告)号：US20180262166A1

公开(公告)日：2018-09-13

申请号：US15908469

申请日：2018-02-28

Applicant: pSemi Corporation

Inventor： Tsuyoshi Takagi ,  Tero Tapio Ranta ,  Keith Bargroff ,  Christopher C. Murphy ,  Robert Mark Englekirk

IPC: H03F1/30 ,  H03F3/213 ,  H03G3/30 ,  H03F3/195 ,  H03F3/68

Abstract: Temperature compensation circuits and methods for adjusting one or more circuit parameters of a power amplifier (PA) to maintain approximately constant Gain versus time during pulsed operation sufficient to substantially offset self-heating of the PA. Some embodiments compensate for PA Gain “droop” due to self-heating using a Sample and Hold (S&H) circuit. Other embodiments include bias compensation circuits that directly regulate a bias signal to an amplifier stage as a function of localized heating of one or more of amplifier stages. Such bias compensation circuits include physical placement of at least one bias compensation circuit element in closer proximity to at least one amplifier stage than other bias compensation circuit elements. One bias compensation circuit embodiment includes a temperature-sensitive current mirror circuit for regulating the bias signal. Another bias compensation circuit embodiment includes a temperature-sensitive element having a positive temperature coefficient (PTC) for regulating the bias signal.

公开(公告)号：US10056874B1

公开(公告)日：2018-08-21

申请号：US15445811

申请日：2017-02-28

Applicant: pSemi Corporation

Inventor： Tero Tapio Ranta ,  Keith Bargroff ,  Christopher Murphy ,  Robert Mark Englekirk

IPC: H03F1/30 ,  H03F1/56 ,  H03F3/19 ,  H03F3/21 ,  H03G3/30

CPC classification number: H03G3/3042 ,  H03F1/30 ,  H03F1/303 ,  H03F1/304 ,  H03F1/56 ,  H03F3/19 ,  H03F3/21 ,  H03F3/245 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/447 ,  H03F2200/451 ,  H03F2200/468 ,  H03G3/3036 ,  H03G2201/106

Abstract: Temperature compensation circuits and methods for adjusting one or more circuit parameters of a power amplifier (PA) to maintain approximately constant Gain versus time during pulsed operation sufficient to substantially offset self-heating of the PA. Some embodiments compensate for PA Gain “droop” due to self-heating using a Sample and Hold (S&H) circuit. The S&H circuit samples and holds an initial temperature of the PA at commencement of a pulse. Thereafter, the S&H circuit generates a continuous measurement that corresponds to the temperature of the PA during the remainder of the pulse. A Gain Control signal is generated that is a function of the difference between the initial temperature and the operating temperature of the PA as the PA self-heats for the duration of the pulse. The Gain Control signal is applied to one or more adjustable or tunable circuits within a PA to offset the Gain droop of the PA.