公开(公告)号：US11543700B2

公开(公告)日：2023-01-03

申请号：US17578010

申请日：2022-01-18

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Hajime Kimura

IPC分类号： G02F1/13357 ,  G09G3/34 ,  G09G3/36 ,  H04N5/14 ,  H04N7/01

摘要： A low-resolution image is displayed at high resolution and power consumption is reduced. Resolution is made higher by super-resolution processing. Then, display is performed with the luminance of a backlight controlled by local dimming after the super-resolution processing. By controlling the luminance of the backlight, power consumption can be reduced. Further, by performing the local dimming ater the super-resolution processing, accurate display can be performed.

公开(公告)号：US20220417390A1

公开(公告)日：2022-12-29

申请号：US17764622

申请日：2020-09-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Kengo AKIMOTO ,  Seiko INOUE ,  Daichi MISHIMA

IPC分类号： H04N1/60

摘要： Color filters are used for color images obtained using imaging devices such as conventional image sensors. Imaging elements with color filters are sold, and an appropriate combination of the imaging element and a lens or the like is incorporated in an electronic device. Only providing a color filter to overlap a light-receiving region of an image sensor reduces the amount of light reaching the light-receiving region. An imaging system of the present invention includes a solid-state imaging element without a color filter, a storage device, and a learning device. Since the color filter is not included, colorization is performed on obtained monochrome image data (analog data), and coloring is performed using an AI system.

公开(公告)号：US20220416183A1

公开(公告)日：2022-12-29

申请号：US17899816

申请日：2022-08-31

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Takaaki NAGATA ,  Tatsuya SAKUISHI ,  Kohei YOKOYAMA ,  Yasuhiro JINBO ,  Taisuke KAMADA ,  Akihiro CHIDA

IPC分类号： H01L51/00 ,  H01L27/32 ,  H01L51/52 ,  H01L51/56 ,  H05K1/18

摘要： A flexible display device is manufactured with high yield. A display device having high resistance to repeated bending is provided. The display device is manufactured by forming a separation layer over a support substrate; forming, over the separation layer, an inorganic insulating layer including a first portion and a second portion; forming a display element over the inorganic insulating layer to be overlapped with the first portion; forming a connection electrode over the inorganic insulating layer to be overlapped with the second portion; sealing the display element; separating the support substrate and the inorganic insulating layer using the separation layer; attaching a substrate to the inorganic insulating layer to be overlapped with the first portion; and etching the second portion using the substrate as a mask to expose the connection electrode.

公开(公告)号：US20220416089A1

公开(公告)日：2022-12-29

申请号：US17895126

申请日：2022-08-25

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Toshihiko TAKEUCHI ,  Naoto YAMADE ,  Yutaka OKAZAKI ,  Sachiaki TEZUKA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L27/108 ,  H01L27/12 ,  H01L29/792

摘要： The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

公开(公告)号：US11536889B2

公开(公告)日：2022-12-27

申请号：US17296832

申请日：2019-12-02

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei Yamazaki ,  Ryo Hatsumi ,  Tetsuji Ishitani ,  Akio Yamashita

IPC分类号： G02F1/1362 ,  F21V8/00 ,  G02F1/137 ,  G02F1/1337 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12

摘要： A novel display device that is highly convenient, useful, or reliable is provided. The display device includes a light guide plate, a display panel, and an intermediate layer, and the light guide plate includes a first surface and a second surface. The first surface is irradiated with light, the second surface has a function of distributing light, the second surface is in contact with the intermediate layer, and the second surface has a first refractive index N1 in a region in contact with the intermediate layer. The display panel faces the second surface, the display panel is in contact with the intermediate layer, and the display panel has a function of scattering the distributed light. The intermediate layer includes a region positioned between the second surface and the display panel, and the intermediate layer has a second refractive index N2 in a region in contact with the second surface. The second refractive index N2 is smaller than the first refractive index N1.

公开(公告)号：US20220406944A1

公开(公告)日：2022-12-22

申请号：US17894197

申请日：2022-08-24

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yasutaka NAKAZAWA ,  Yukinori SHIMA ,  Kenichi OKAZAKI ,  Junichi KOEZUKA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  G09F9/30 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H05B33/10 ,  H05B33/14

摘要： A semiconductor device which has favorable electrical characteristics, a method for manufacturing a semiconductor device with high productivity, and a method for manufacturing a semiconductor device with a high yield are provided. The method for manufacturing a semiconductor device includes a first step of forming a first insulating layer containing silicon and nitrogen, a second step of adding oxygen in a vicinity of a surface of the first insulating layer, a third step of forming a semiconductor layer containing a metal oxide over and in contact with the first insulating layer, a fourth step of forming a second insulating layer containing oxygen over and in contact with the semiconductor layer, a fifth step of performing plasma treatment in an atmosphere containing oxygen at a first temperature, a sixth step of performing plasma treatment in an atmosphere containing oxygen at a second temperature lower than the first temperature, and a seventh step of forming a third insulating layer containing silicon and nitrogen over the second insulating layer.

公开(公告)号：US20220406268A1

公开(公告)日：2022-12-22

申请号：US17848488

申请日：2022-06-24

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Atsushi UMEZAKI ,  Ryo ARASAWA

IPC分类号： G09G3/36 ,  G11C19/18 ,  H01L27/12 ,  H01L49/02

摘要： It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line. The scan line driver circuit includes a second transistor and a capacitor for holding a voltage between a gate electrode layer of the second transistor and a source electrode layer of the second transistor. The source electrode of the second transistor is connected to the scan line.

公开(公告)号：US11532755B2

公开(公告)日：2022-12-20

申请号：US17120774

申请日：2020-12-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa Shimomura ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yasumasa Yamane ,  Yuhei Sato ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02

摘要： To provide a novel oxide semiconductor film. The oxide semiconductor film includes In, M, and Zn. The M is Al, Ga, Y, or Sn. In the case where the proportion of In in the oxide semiconductor film is 4, the proportion of M is greater than or equal to 1.5 and less than or equal 2.5 and the proportion of Zn is greater than or equal to 2 and less than or equal to 4.

公开(公告)号：US11532650B2

公开(公告)日：2022-12-20

申请号：US17030560

申请日：2020-09-24

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Kenichi Okazaki ,  Daisuke Kurosaki ,  Yasutaka Nakazawa

IPC分类号： H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  G02F1/1362 ,  H01L27/12 ,  H01L21/02 ,  G02F1/1368 ,  H01L29/786

摘要： A liquid crystal display device with a high aperture ratio is provided. A liquid crystal display device with low power consumption is provided. A display device includes a transistor and a capacitor. The transistor includes a first insulating layer, a first semiconductor layer in contact with the first insulating layer, a second insulating layer in contact with the first semiconductor layer, and a first conductive layer electrically connected to the first semiconductor layer via an opening portion provided in the second insulating layer. The capacitor includes a second conductive layer in contact with the first insulating layer, the second insulating layer in contact with the second conductive layer, and the first conductive layer in contact with the second insulating layer. The second conductive layer includes a composition similar to that of the first semiconductor layer. The first conductive layer and the second conductive layer are configured to transmit visible light.

公开(公告)号：US11532488B2

公开(公告)日：2022-12-20

申请号：US17325490

申请日：2021-05-20

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Masashi Tsubuku ,  Kengo Akimoto ,  Miyuki Hosoba ,  Masayuki Sakakura ,  Yoshiaki Oikawa

IPC分类号： H01L29/768 ,  H01L27/12 ,  H01L21/477 ,  H01L29/66 ,  H01L21/02 ,  G02F1/1333 ,  G02F1/1368 ,  H01L29/786

摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.