公开(公告)号：US09815686B2

公开(公告)日：2017-11-14

申请号：US15293147

申请日：2016-10-13

Applicant: Vmicro ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

Inventor： Benjamin Walter ,  Marc Faucher

IPC: H01L27/14 ,  B81B3/00

CPC classification number: B81B3/0045 ,  B81B3/0021 ,  B81B3/0024 ,  B81B3/0086 ,  B81B2201/02 ,  B81B2201/031 ,  B81B2203/0118 ,  G01P15/123 ,  G01Q10/045 ,  G01Q20/04

Abstract: A microelectromechanical device comprising a mechanical structure extending along a longitudinal direction, linked to a planar substrate by an anchorage situated at one of its ends and able to flex in a plane parallel to the substrate, the mechanical structure comprises a joining portion, which links it to each anchorage and includes a resistive region exhibiting a first and second zone for injecting an electric current to form a resistive transducer, the resistive region extending in the longitudinal direction from an anchorage and arranged so a flexion of the mechanical structure in the plane parallel to the substrate induces a non-zero average strain in the resistive region and vice versa; wherein: the first injection zone is carried by the anchorage; and the second injection zone is carried by a conducting element not fixed to the substrate and extending in a direction, termed lateral, substantially perpendicular to the longitudinal direction.

公开(公告)号：US09783413B2

公开(公告)日：2017-10-10

申请号：US15166019

申请日：2016-05-26

Applicant: DigitalOptics Corporation MEMS

Inventor： Ankur Jain ,  Roman C. Gutierrez ,  Shi-Sheng Lee ,  Robert J. Calvet ,  Xiaolei Liu

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G03B3/10

CPC classification number: B81B7/0077 ,  B81B2201/031 ,  B81B2203/033 ,  B81C1/00571 ,  G03B3/10 ,  G03B2205/0061

Abstract: A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.

公开(公告)号：US09612040B2

公开(公告)日：2017-04-04

申请号：US14362285

申请日：2012-11-29

Applicant: Commissariat à l'énergie atomique et aux énergies alternatives

Inventor： Fabrice Casset

IPC: F24J3/00 ,  F03G7/06 ,  B81B3/00 ,  H02N2/18 ,  H01L41/113

CPC classification number: F24V99/00 ,  B81B3/0024 ,  B81B3/0081 ,  B81B2201/0271 ,  B81B2201/031 ,  B81B2201/032 ,  F03G7/06 ,  H01L41/1136 ,  H02N2/18

Abstract: A device for generating a second temperature variation ΔT2 from a first use temperature variation ΔT1, includes an elastocaloric material layer, having an internal temperature which is able to vary by ΔT2 in response to a given mechanical stress variation Δσ applied to the elastocaloric material layer. The variation Δσ being induced by the first use temperature variation ΔT1 There is a suspended element in mechanical contact with the elastocaloric material layer so as to apply to this layer a mechanical stress that varies in response to the use temperature variation ΔT1. The suspended element is arranged so as to make the mechanical stress applied to the elastocaloric material layer vary by Δσ in response to the temperature variation ΔT1, to generate the second temperature variation ΔT2.

公开(公告)号：US20160272485A1

公开(公告)日：2016-09-22

申请号：US15166019

申请日：2016-05-26

Applicant: DigitalOptics Corporation MEMS

Inventor： Ankur JAIN ,  Roman C. GUTIERREZ ,  Shi-Sheng LEE ,  Robert J. CALVET ,  Xiaolei LIU

IPC: B81B7/00

CPC classification number: B81B7/0077 ,  B81B2201/031 ,  B81B2203/033 ,  B81C1/00571 ,  G03B3/10 ,  G03B2205/0061

Abstract: A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.

Abstract translation: 器件可以包括由第一半导体材料形成的衬底和形成在衬底中的沟槽。 可以在沟槽中形成第二半导体材料。 第二半导体材料可以具有相对于彼此隔离并且相对于第一半导体材料隔离的第一和第二部分。

公开(公告)号：US09441931B1

公开(公告)日：2016-09-13

申请号：US14756652

申请日：2015-09-29

Applicant: Department of the Navy

Inventor： Troy Caruso ,  Thinh Hoang ,  Daniel Jean ,  Kevin Cochran ,  Andrew Jen ,  Scott Rauscher ,  Kristopher Nodianos

IPC: F42C15/188 ,  F42C15/40 ,  F42C19/12 ,  B81B3/00 ,  B81C1/00

CPC classification number: F42C15/188 ,  B81B3/0024 ,  B81B2201/031 ,  B81B2201/034 ,  B81B2203/056 ,  F42C15/40

Abstract: An apparatus used in a fuze device, which includes a MEMS micro-rotor. The micro-rotor of the apparatus may move an explosive material, for example, a fuze material, from an out-of-line position to an in-line position. The micro-rotor includes an integral cavity in which the material may be safely loaded and held in the out-of-line position. At an appropriate time, the fuze device of a fully assembled ordnance may be armed. When the apparatus is activated, the micro-rotor carefully moves the explosive material to the in-line position, where the ordnance is armed.

Abstract translation: 一种在引信装置中使用的装置，其包括MEMS微转子。 装置的微型转子可以将爆炸物质例如引信材料从脱线位置移动到直列位置。 微转子包括整体空腔，其中材料可以被安全地装载并保持在离线位置。 在适当的时候，完全组装的军械的引信装置可以装备。 当设备启动时，微型转子会将爆炸物小心地移动到装备武器的在线位置。

公开(公告)号：US20150318799A1

公开(公告)日：2015-11-05

申请号：US14699183

申请日：2015-04-29

Applicant: Seiko Epson Corporation

Inventor： Nozomu HIROKUBO

IPC: H02N1/00 ,  G02B5/28

CPC classification number: G05B11/14 ,  B81B2201/031 ,  G01J3/027 ,  G01J3/10 ,  G01J3/26 ,  G01J3/505 ,  G02B5/286 ,  G02B5/288 ,  G02B26/001 ,  H02N1/006

Abstract: An actuator apparatus includes a pair of substrates facing each other; a plurality of bias actuators that each vary a gap dimension of a gap between the pair of substrates; a gap detection portion that detects the gap dimension; and a voltage control unit that controls driving of each of the bias actuators on the basis of the detected gap dimension. The bias actuators are located asymmetric relative to a driving central axis and are mutually independently driven; and the voltage control unit derives driving parameters for use in driving the bias actuators, on the basis of voltages and gap dimensions obtained by sequentially switching and driving the bias actuators on by one.

Abstract translation: 致动器装置包括彼此面对的一对基板; 多个偏置致动器，其各自改变所述一对基板之间的间隙的间隙尺寸; 间隙检测部，其检测所述间隙尺寸; 以及电压控制单元，其基于检测到的间隙尺寸来控制每个偏压致动器的驱动。 偏压致动器相对于驱动中心轴线是不对称的并且相互独立地驱动; 并且电压控制单元基于通过依次切换和驱动偏置致动器而得到的电压和间隙尺寸，导出用于驱动偏置致动器的驱动参数。

公开(公告)号：US09108314B2

公开(公告)日：2015-08-18

申请号：US14206585

申请日：2014-03-12

Applicant: The Johns Hopkins University

Inventor： David H. Gracias ,  Timothy G. Leong

IPC: G01N15/06 ,  G01N33/00 ,  G01N33/48 ,  B25J7/00 ,  B81B3/00 ,  B81C99/00

CPC classification number: B25J7/00 ,  B81B3/0024 ,  B81B3/0032 ,  B81B2201/031 ,  B81C99/002 ,  Y10T436/11

Abstract: A lithographically structured device has an actuation layer and a control layer operatively connected to the actuation layer. The actuation layer includes a stress layer and a neutral layer that is constructed of materials and with a structure such that it stores torsional energy upon being constructed. The control layer is constructed to maintain the actuation layer substantially in a first configuration in a local environmental condition and is responsive to a change in the local environmental condition such that it permits a release of stored torsional energy to cause a change in a structural configuration of the lithographically structured device to a second configuration, the control layer thereby providing a trigger mechanism. The lithographically structured device has a maximum dimension that is less than about 10 mm when it is in the second configuration.

Abstract translation: 光刻结构的器件具有可操作地连接到致动层的致动层和控制层。 致动层包括应力层和中性层，其由材料构成，并具有在构造时存储扭转能的结构。 控制层被构造成在局部环境条件下将致动层基本上保持在第一构型中并且响应于局部环境条件的改变，使得其允许释放存储的扭转能量以引起结构构造的变化 光刻结构的设备到第二配置，控制层由此提供触发机构。 光刻结构的装置在其处于第二构型时的最大尺寸小于约10mm。

公开(公告)号：US07692127B1

公开(公告)日：2010-04-06

申请号：US11729086

申请日：2007-03-26

Applicant: Eric H. Linn ,  Michael A. Deeds ,  David Herman

Inventor： Eric H. Linn ,  Michael A. Deeds ,  David Herman

IPC: F42B15/01 ,  F42B10/00 ,  B81B7/00 ,  F42B15/00

CPC classification number: F42B10/62 ,  B81B3/0054 ,  B81B3/0072 ,  B81B2201/031 ,  B81B2203/0109 ,  B81B2203/051 ,  B81B2203/058

Abstract: A MEMS apparatus includes a substrate; electrical contacts disposed on the substrate; a thermal arch beam supported by and connected between the contacts, the thermal arch beam including a midpoint and a protrusion located at about the midpoint; a lever having an axis of rotation and a bearing surface upon which the protrusion is operable to bear, a pair of lever supports disposed on the substrate for rotatably supporting the lever about the axis of rotation, an area of contact between the protrusion and the bearing surface being positioned vertically between the axis of rotation and the plane of the substrate. A voltage difference between the electrical contacts causes the thermal arch beam to move horizontally in the plane and the protrusion to bear against the lever causing rotation of the lever out of the plane.

Abstract translation: MEMS装置包括：基板; 设置在基板上的电触点; 支撑并连接在触头之间的热拱梁，热拱梁包括位于中点附近的中点和突起; 杠杆，其具有旋转轴线和支撑面，突起可操作地承载在所述支承面上;一对杆支撑件，其设置在所述基板上，用于围绕所述旋转轴线可旋转地支撑所述杠杆;所述突起与所述轴承之间的接触区域 表面垂直定位在旋转轴线和基板的平面之间。 电触点之间的电压差导致热拱梁在平面中水平移动，并且突起抵靠杠杆，导致杠杆从平面旋转。

公开(公告)号：US06969630B2

公开(公告)日：2005-11-29

申请号：US10663983

申请日：2003-09-17

Applicant: Mehmet Ozgur

Inventor： Mehmet Ozgur

IPC: B81B3/00 ,  B81B7/02 ,  H01H1/00 ,  H01H61/00 ,  H01L21/00

CPC classification number: H01H1/0036 ,  B81B2201/014 ,  B81B2201/031 ,  B81C1/00246 ,  B81C2203/0735 ,  H01H61/00 ,  H01H2061/006

Abstract: A monolithically integrated, electromechanical microwave switch, capable of handling signals from DC to millimeter-wave frequencies, and an integrated electromechanical tunable capacitor are described. Both electromechanical devices include movable beams actuated either by thermo-mechanical or by electrostatic forces. The devices are fabricated directly on finished silicon-based integrated circuit wafers, such as CMOS, BiCMOS or bipolar wafers. The movable beams are formed by selectively removing the supporting silicon underneath the thin films available in a silicon-based integrated circuit technology, which incorporates at least one polysilicon layer and two metallization layers. A cavity and a thick, low-loss metallization are used to form an electrode above the movable beam. A thick mechanical support layer is formed on regions where the cavity is located, or substrate is bulk-micro-machined, i.e., etched.

Abstract translation: 描述了能够处理从DC到毫米波频率的信号的单片集成的机电微波开关，以及集成的机电可调电容器。 两个机电装置都包括通过热机械或静电力而致动的可移动梁。 这些器件直接在成品硅基集成电路晶片上制造，例如CMOS，BiCMOS或双极晶片。 可移动光束通过选择性地去除在基于硅的集成电路技术中可获得的薄膜下面的支撑硅而形成，该技术包括至少一个多晶硅层和两个金属化层。 使用空腔和厚的低损耗金属化在可动梁的上方形成电极。 在空腔所在的区域上形成厚的机械支撑层，或者衬底被体微加工，即蚀刻。

公开(公告)号：US06877316B1

公开(公告)日：2005-04-12

申请号：US10719266

申请日：2003-11-21

Applicant: Niladri Sarkar ,  Aaron Geisberger ,  Matthew Ellis

Inventor： Niladri Sarkar ,  Aaron Geisberger ,  Matthew Ellis

IPC: B81B3/00 ,  F01B29/10

CPC classification number: B81B3/0024 ,  B81B2201/031 ,  B81B2201/038 ,  B81B2203/051

Abstract: A scratch drive actuator (SDA) device comprising a drive shoe and an actuator. The drive shoe has a first drive shoe position and a second drive shoe position and is configured to urge a shuttle from a first shuttle position to a second shuttle position. The actuator is coupled to the drive shoe and is configured to expand and contract in response to exposure to thermal energy, wherein the expansion and contraction of the actuator each urge the drive shoe towards a corresponding one of the first and second drive shoe positions.

Abstract translation: 包括驱动靴和致动器的刮擦驱动致动器（SDA）装置。 驱动靴具有第一驱动靴位置和第二驱动靴位置，并且构造成将穿梭从第一穿梭位置推动到第二穿梭位置。 致动器联接到驱动靴并且被配置为响应于暴露于热能而膨胀和收缩，其中致动器的膨胀和收缩将每个驱动靴推向第一和第二驱动靴位置中相应的一个。