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公开(公告)号：US3255375A
公开(公告)日：1966-06-07
申请号：US15556561
申请日：1961-11-29
申请人： VARIAN ASSOCIATES
发明人： WARD CURTIS E
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公开(公告)号：US20190057829A1
公开(公告)日：2019-02-21
申请号：US16027200
申请日：2018-07-03
发明人： Chris Ferrari , Thomas M. Bemis
摘要： Embodiments include a vacuum device, comprising: an enclosure configured to enclose a vacuum, comprising an external base forming at least a portion of the enclosure; an internal base within the enclosure; and at least one thermal dissipative strap assembly, comprising: an internal base thermal conductive base in contact with the internal base, an external base thermal conductive base in contact with the external base, and a flexible thermal dissipative strap coupling the internal base thermal conductive base to the external base thermal conductive base.
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公开(公告)号：US20180286622A1
公开(公告)日：2018-10-04
申请号：US15762874
申请日：2016-09-16
发明人： Yukihira NAKAZATO , Eiji FUJIWARA
IPC分类号： H01J23/34 , H01J23/04 , H01J23/06 , H01J23/027
CPC分类号： H01J23/34 , H01J23/027 , H01J23/04 , H01J23/06 , H01J23/065 , H01J23/087
摘要： The purpose is to make it possible to autonomously suppress a reduction in an electron beam without providing a means for supervising the electron beam intensity of a monitor or the like. An electron gun, provided with: a heater (12) in which one terminal serves as a heater terminal (H) and the other terminal serves as a shared terminal (HK), and in which a low-voltage power supply (21) is connected between the terminals, the heater (12) generating heat due to a current being supplied from the low-voltage power supply (21); and a cathode electrode (11) connected to the shared terminal (HK) and heated by the heater (12) to discharge thermal electrons. A cathode current (Ik) due to the thermal electrons discharged from the cathode electrode (11), and a current (Ih) due to the low-voltage power supply, flow in opposite directions through the heater (12).
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公开(公告)号：US20170207055A1
公开(公告)日：2017-07-20
申请号：US15372726
申请日：2016-12-08
发明人： Ryan Matthew Jacobs , Dane Morgan , John Booske
IPC分类号： H01J19/062 , H01J19/064 , H03F3/189 , H01J23/04 , H03F3/58 , H01J45/00 , H01J25/42
CPC分类号： H01J19/062 , H01J19/064 , H01J23/04 , H01J25/42 , H01J45/00 , H03F3/189 , H03F3/58 , H03F2200/451
摘要： An electron emitter device is provided comprising a cathode comprising a conductive transition metal perovskite oxide comprising mobile conducting electrons exhibiting a conductivity of at least 10−6 Ω−1-cm−1 at room temperature, the transition metal perovskite oxide having a surface from which the mobile electrons are induced to emit upon receiving sufficient energy from an energy source; and an anode electrically coupled to the cathode and positioned to define an interelectrode conductive region between the anode and the cathode, onto which anode the emitted electrons are collected. The transition metal perovskite oxide may have formula Sr1-xBaxVO3. Related methods and devices based on the electron emitter device are also provided.
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公开(公告)号：US20170140892A1
公开(公告)日：2017-05-18
申请号：US15319845
申请日：2015-06-26
发明人： Takatsugu MUNEHIRO
IPC分类号： H01J23/087 , H01J23/065 , H01J23/027 , H01J23/04
CPC分类号： H01J23/087 , H01J23/027 , H01J23/04 , H01J23/06 , H01J23/065 , H01J23/0873 , H01J23/34 , H01J25/34 , H01J25/42
摘要： Provided are a traveling wave tube and a high-frequency circuit system such that the product life span of the traveling wave tube operating in multiple modes can be extended while variations in gain and amplification efficiency that accompany switching of the operation modes can be suppressed. The traveling wave tube comprises: an electron gun equipped with a cathode that releases electrons, and a heater that provides the cathode with heat energy for releasing the electrons; a helix causing an RF signal to interact with an electron beam formed from the electrons released by the electron gun; a collector for catching the electron beam emitted by the helix; an anode whereby the electrons released from the electron gun are guided into the helix; and a magnetic field application device for generating a magnetic field in order to change the diameter of the electron beam, said magnetic field application device being supplied with electric power for generating the magnetic field from the outside.
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公开(公告)号：US09305738B2
公开(公告)日：2016-04-05
申请号：US14749583
申请日：2015-06-24
发明人： Peng Liu , Pi-Jin Chen , Duan-Liang Zhou , Chun-Hai Zhang , Shou-Shan Fan
摘要： An electron emission device includes an anode, a cathode, an electron emitter structure, and an electron extraction electrode. The cathode is spaced from the anode. The electron emitter structure is electrically connected to the cathode. The electron extraction electrode is insulated from the cathode. The electron extraction electrode defines a through hole surrounded by a sidewall, and the electron emitter structure faces to the sidewall. The electron emitter structure includes a number of electron emitters extending toward the sidewall, each of the number of electron emitters includes an electron emission terminal, a first distance between each electron emission terminal and the sidewall is substantially the same, a second distance between the electron emission terminal and the anode is greater than or equal to 10 micrometers and smaller than or equal to 200 micrometers, and a pressure in the electron emission device is smaller than or equal to 100 Pascal.
摘要翻译： 电子发射装置包括阳极，阴极，电子发射体结构和电子提取电极。 阴极与阳极间隔开。 电子发射体结构与阴极电连接。 电子提取电极与阴极绝缘。 电子提取电极限定由侧壁包围的通孔，并且电子发射体结构面向侧壁。 电子发射器结构包括朝向侧壁延伸的多个电子发射体，多个电子发射器中的每一个包括电子发射端子，每个电子发射端子和侧壁之间的第一距离基本相同，电子之间的第二距离 发射端子和阳极大于或等于10微米且小于或等于200微米，并且电子发射器件中的压力小于或等于100帕斯卡。
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公开(公告)号：US09305734B2
公开(公告)日：2016-04-05
申请号：US14234328
申请日：2012-07-20
摘要： A semiconductor device for electron emission in a vacuum comprises a stack of two or more semi-conductor layers of N and P type according to sequence N/(P)/N forming a juxtaposition of two head-to-tail NP junctions, in materials belonging to the III-N family, two adjacent layers forming an interface. The semiconductor materials of the layers of the stack close to the vacuum, where the electrons reach a high energy, have a band gap Eg>c/2, where c is the electron affinity of the semiconductor material, the P-type semiconductor layer being obtained partially or completely, by doping impurities of acceptor type or by piezoelectric effect to exhibit a negative fixed charge in any interface between the layers, a positive bias potential applied to the stack supplying, to a fraction of electrons circulating in the stack, the energy needed for emission in the vacuum by an emissive zone of an output layer.
摘要翻译： 用于真空中电子发射的半导体器件包括根据序列N /（P）/ N的两个或多个N型和P型半导体层的堆叠，形成两个头对尾NP连接的并置，材料 属于III-N族，两个相邻的层形成界面。 靠近真空的堆叠层的半导体材料，其中电子达到高能量，具有带隙Eg> c / 2，其中c是半导体材料的电子亲和力，P型半导体层是 通过掺杂受体类型的杂质或通过压电效应来获得部分或完全地获得，以在层之间的任何界面中显示负的固定电荷，施加到堆叠的积极偏置电势提供给堆叠中循环的一部分电子， 需要通过输出层的发射区在真空中发射。
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公开(公告)号：US20150380199A1
公开(公告)日：2015-12-31
申请号：US14749583
申请日：2015-06-24
发明人： PENG LIU , PI-JIN CHEN , DUAN-LIANG ZHOU , CHUN-HAI ZHANG , SHOU-SHAN FAN
摘要： An electron emission device includes an anode, a cathode, an electron emitter structure, and an electron extraction electrode. The cathode is spaced from the anode. The electron emitter structure is electrically connected to the cathode. The electron extraction electrode is insulated from the cathode. The electron extraction electrode defines a through hole surrounded by a sidewall, and the electron emitter structure faces to the sidewall. The electron emitter structure includes a number of electron emitters extending toward the sidewall, each of the number of electron emitters includes an electron emission terminal, a first distance between each electron emission terminal and the sidewall is substantially the same, a second distance between the electron emission terminal and the anode is greater than or equal to 10 micrometers and smaller than or equal to 200 micrometers, and a pressure in the electron emission device is smaller than or equal to 100 Pascal.
摘要翻译： 电子发射装置包括阳极，阴极，电子发射体结构和电子提取电极。 阴极与阳极间隔开。 电子发射体结构与阴极电连接。 电子提取电极与阴极绝缘。 电子提取电极限定由侧壁包围的通孔，并且电子发射体结构面向侧壁。 电子发射器结构包括朝向侧壁延伸的多个电子发射体，多个电子发射器中的每一个包括电子发射端子，每个电子发射端子和侧壁之间的第一距离基本相同，电子之间的第二距离 发射端子和阳极大于或等于10微米且小于或等于200微米，并且电子发射器件中的压力小于或等于100帕斯卡。
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