公开(公告)号：US2138928A

公开(公告)日：1938-12-06

申请号：US10475436

申请日：1936-10-09

Applicant: EMI LTD

Inventor： OTTO KLEMPERER

IPC: H01J43/08

CPC classification number: H01J43/08

公开(公告)号：US20170062637A1

公开(公告)日：2017-03-02

申请号：US15256360

申请日：2016-09-02

Applicant: Physical Optics Corporation

Inventor： Paul Shnitser ,  Gennady Medvedkin

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/0304

CPC classification number: H01L31/035227 ,  H01J43/00 ,  H01J43/08 ,  H01L31/03044 ,  H01L31/1856

Abstract: A photodetector assembly for ultraviolet and far-ultraviolet detection includes an anode, a microchannel plate with an array of multichannel walls, and a photocathode layer disposed on the microchannel plate. Additionally, the photocathode may include nanowires deposited on a top surface of the array of multichannel walls.

Abstract translation: 用于紫外线和远紫外线检测的光电检测器组件包括阳极，具有多通道壁阵列的微通道板和设置在微通道板上的光电阴极层。 另外，光电阴极可以包括沉积在多通道阵列阵列的顶表面上的纳米线。

公开(公告)号：US20160300701A1

公开(公告)日：2016-10-13

申请号：US15189871

申请日：2016-06-22

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Alex Chuang ,  David L. Brown ,  John Fielden

IPC: H01J40/06 ,  H01L31/103 ,  H01L31/0216 ,  H01J43/08

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A system for inspecting a sample including a detector, either a photomultiplier tube or an electron-bombarded image sensor, that is positioned to receive light from the sample. The detector includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. The semiconductor photocathode includes silicon, and further includes a pure boron coating on at least one surface.

Abstract translation: 用于检查包括检测器，光电倍增管或电子轰击图像传感器的样品的系统，其被定位成接收来自样品的光。 检测器包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及在p掺杂的第二表面上形成的纯硼层 半导体层。 半导体光电阴极包括硅，并且在至少一个表面上还包括纯硼涂层。

公开(公告)号：US09460899B2

公开(公告)日：2016-10-04

申请号：US14841886

申请日：2015-09-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroyuki Kyushima ,  Hideki Shimoi ,  Akihiro Kageyama ,  Keisuke Inoue ,  Masuo Ito

IPC: H01J43/04 ,  H01J43/08 ,  H01J43/24 ,  H01J9/26

CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

Abstract: The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.

公开(公告)号：US20160141161A1

公开(公告)日：2016-05-19

申请号：US14934107

申请日：2015-11-05

Applicant: KLA-Tencor Corporation

Inventor： Derek Cameron Mackay

IPC: H01J43/10 ,  H01J43/18

CPC classification number: H01J43/10 ,  H01J43/08 ,  H01J43/18

Abstract: An internal portion of a photomultiplier tube (PMT) having a reflective photocathode array, and a method for manufacturing the same, are provided. The internal portion of the PMT comprises the reflective photocathode array and at least one dynode structure corresponding to the array of reflective photocathodes. Each reflective photocathode receives light and from the light, generates photoelectrons which then travel towards the at least one dynode structure. Upon the photoelectrons making contact with the at least one dynode structure, the photoelectrons are multiplied.

Abstract translation: 提供了具有反射光电阴极阵列的光电倍增管（PMT）的内部部分及其制造方法。 PMT的内部部分包括反射光电阴极阵列和对应于反射光电阴极阵列的至少一个倍增极结构。 每个反射光电阴极接收光并且从光产生光电子，然后光电子朝向至少一个倍增电极结构行进。 当光电子与至少一个倍增极结构接触时，光电子被倍增。

公开(公告)号：US08963094B2

公开(公告)日：2015-02-24

申请号：US13753458

申请日：2013-01-29

Applicant: Rapiscan Systems, Inc.

Inventor： Tsahi Gozani ,  Michael Joseph King ,  Donald Bennett Hilliard ,  Joseph Bendahan

IPC: G01T1/164

CPC classification number: G01T3/06 ,  G01T1/167 ,  G01T1/2008 ,  G01T1/203 ,  G01T3/008 ,  G01V5/0075 ,  G01V5/0091 ,  H01J43/08 ,  H01J43/30

Abstract: The present invention provides a gamma-neutron detector based on mixtures of thermal neutron absorbers that produce heavy-particle emission following thermal capture. In one configuration, B-10 based detector is used in a parallel electrode plate geometry that integrates neutron moderating sheets, such as polyethylene, on the back of the electrode plates to thermalize the neutrons and then detect them with high efficiency. The moderator can also be replaced with plastic scintillator sheets viewed with a large area photomultiplier tube to detect gamma-rays as well. The detector can be used in several scanning configurations including portal, drive-through, drive-by, handheld and backpack, etc.

Abstract translation: 本发明提供了一种基于热中子吸收剂的混合物的γ中子检测器，其在热捕获之后产生重粒子发射。 在一种配置中，基于B-10的检测器用于平行电极板几何形状，其将中子调节片（例如聚乙烯）集成在电极板的背面上，以使中子热化，然后以高效率进行检测。 调节剂也可以用用大面积光电倍增管观察的塑料闪烁体片替代，以检测伽马射线。 检测器可用于多种扫描配置，包括门禁，驱动器，驱动器，手持和背包等。

公开(公告)号：US20140291493A1

公开(公告)日：2014-10-02

申请号：US14198175

申请日：2014-03-05

Applicant: KLA-Tencor Corporation

Inventor： Yung-Ho Chuang ,  David L. Brown ,  John Fielden

IPC: H01L31/11 ,  H01L31/167

CPC classification number: H01J40/06 ,  H01J43/08 ,  H01L31/02161 ,  H01L31/103

Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

Abstract translation: 光电倍增管包括半导体光电阴极和光电二极管。 值得注意的是，光电二极管包括p掺杂半导体层，形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层，以及形成在p掺杂半导体层的第二表面上的纯硼层 半导体层。 半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。 半导体光电阴极可以包括例如氮化镓。 一个或多个p掺杂氮化镓层。 在其他实施例中，半导体光电阴极可以包括硅。 该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。

公开(公告)号：US20140111085A1

公开(公告)日：2014-04-24

申请号：US14136236

申请日：2013-12-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroyuki KYUSHIMA ,  Hideki SHIMOI ,  Akihiro KAGEYAMA ,  Keisuke INOUE ,  Masuo ITO

IPC: H01J43/04

CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

Abstract: The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.

Abstract translation: 本发明涉及具有能够容易地实现高检测精度和精细处理的结构的光电倍增管及其制造方法。 光电倍增管包括具有内部保持在真空状态的外壳，而响应于入射光发射电子的光电阴极，电子倍增器部分以级联方式从光电阴极发射的电子和用于取出二次电子的阳极 在电子倍增器部分中产生的电极被布置在外壳中。 外壳的一部分由具有平坦部分的玻璃基板构成，而电子倍增器部分和阳极中的每一个二维地布置在玻璃基板的平坦部分上。

公开(公告)号：US08643258B2

公开(公告)日：2014-02-04

申请号：US13548772

申请日：2012-07-13

Applicant: Hiroyuki Kyushima ,  Hideki Shimoi ,  Akihiro Kageyama ,  Keisuke Inoue ,  Masuo Ito

Inventor： Hiroyuki Kyushima ,  Hideki Shimoi ,  Akihiro Kageyama ,  Keisuke Inoue ,  Masuo Ito

IPC: H01J43/00

CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

Abstract: The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.

Abstract translation: 本发明涉及具有能够容易地实现高检测精度和精细处理的结构的光电倍增管及其制造方法。 光电倍增管包括具有内部保持在真空状态的外壳，而响应于入射光发射电子的光电阴极，电子倍增器部分以级联方式从光电阴极发射的电子和用于取出二次电子的阳极 在电子倍增器部分中产生的电极被布置在外壳中。 外壳的一部分由具有平坦部分的玻璃基板构成，而电子倍增器部分和阳极中的每一个二维地布置在玻璃基板的平坦部分上。

公开(公告)号：US08389942B2

公开(公告)日：2013-03-05

申请号：US12997251

申请日：2009-06-11

Applicant: Edward James Morton

Inventor： Edward James Morton

IPC: G01T1/166

CPC classification number: H01J43/30 ,  G01T1/16 ,  G01T1/167 ,  G01T1/208 ,  G01T3/06 ,  G01V5/0025 ,  G01V5/0091 ,  H01J40/04 ,  H01J43/08 ,  H01J43/18

Abstract: The invention provides a switchable photomultiplier switchable between a detecting state and a non-detecting state including a cathode upon which incident radiation is arranged to impinge. The photomultiplier also includes a series of dynodes arranged to amplify a current created at the cathode upon detection of photoradiation. The invention also provides a detection system arranged to detect radiation-emitting material in an object. The system includes a detector switchable between a detecting state in which the detector is arranged to detect radiation and a non-detecting state in which the detector is arranged to not detect radiation. The system further includes a controller arranged to control switching of the detector between the states such that the detector is switched to the non-detecting state while an external radiation source is irradiating the object.