公开(公告)号：US20190331617A1

公开(公告)日：2019-10-31

申请号：US16394032

申请日：2019-04-25

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Ryosuke OTA ,  Motohiro SUYAMA ,  Hideki SHIMOI

IPC: G01N23/095 ,  G01T1/24 ,  G01T1/22

Abstract: A gamma ray detector is a detector detecting gamma rays and includes a photomultiplier tube having an entrance window and a photoelectric surface. The entrance window is a Cherenkov radiator. The photoelectric surface is formed on a vacuum side of the entrance window via an intermediate layer. The thickness of the intermediate layer is equal to or less than the wavelength of Cherenkov light emitted by an interaction of the gamma rays with the entrance window.

公开(公告)号：US20200093448A1

公开(公告)日：2020-03-26

申请号：US16543728

申请日：2019-08-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Motohiro SUYAMA ,  Hideki SHIMOI ,  Ryosuke OTA ,  Ryoko YAMADA

IPC: A61B6/00 ,  G01T1/24 ,  A61B6/03

Abstract: A high-energy ray detector includes a detection unit in a vacuum container. The detection unit includes a first electron multiplier, a second electron multiplier, and an electron collector. Each of the first electron multiplier and the second electron multiplier has one or more MCPs each configured to emit electrons by interaction with an incident high-energy ray (γ-ray, X-ray (in particular hard X-ray), or neutron ray), and multiply and output the electrons. The electron collector is transmissive for the high-energy ray. The electron collector is configured to collect the electrons multiplied and output from each of the first electron multiplier and the second electron multiplier, and output an electric pulse signal.

公开(公告)号：US20140111085A1

公开(公告)日：2014-04-24

申请号：US14136236

申请日：2013-12-20

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroyuki KYUSHIMA ,  Hideki SHIMOI ,  Akihiro KAGEYAMA ,  Keisuke INOUE ,  Masuo ITO

IPC: H01J43/04

CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

Abstract: The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.

Abstract translation: 本发明涉及具有能够容易地实现高检测精度和精细处理的结构的光电倍增管及其制造方法。 光电倍增管包括具有内部保持在真空状态的外壳，而响应于入射光发射电子的光电阴极，电子倍增器部分以级联方式从光电阴极发射的电子和用于取出二次电子的阳极 在电子倍增器部分中产生的电极被布置在外壳中。 外壳的一部分由具有平坦部分的玻璃基板构成，而电子倍增器部分和阳极中的每一个二维地布置在玻璃基板的平坦部分上。

公开(公告)号：US20160167355A1

公开(公告)日：2016-06-16

申请号：US15051038

申请日：2016-02-23

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hideki SHIMOI ,  Naoki UCHIYAMA ,  Daisuke KAWAGUCHI

IPC: B32B37/06 ,  B32B38/00

CPC classification number: B32B37/06 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/00 ,  B28D5/0011 ,  B32B38/0004 ,  H01L21/78 ,  Y10T29/49002 ,  Y10T29/49787 ,  Y10T156/1052

Abstract: A silicon substrate 12 has a main face in a (100) plane, whereby a fracture 17 generated from a molten processed region 13 acting as a start point extends in a cleavage direction of the silicon substrate 12 (a direction orthogonal to the main face of the silicon substrate 12). Here, a rear face 1b of an object to be processed 1A and a front face 10a of an object to be processed for separation 10A are bonded to each other by anode bonding, whereby the fracture 17 reaches a front face 1a of the object 1A continuously without substantially changing its direction. When generating a stress in the object for separation 10A, the fracture 17 has reached a rear face 10b of the object for separation 10A and thus easily extends toward the object 1A.

Abstract translation: 硅基板12具有（100）面内的主面，由作为起点的熔融处理区域13产生的断裂线17沿硅基板12的切割方向（与 硅衬底12）。 这里，待处理物体1A的后表面1b和待加工物体10A的前面10a通过阳极接合彼此接合，从而断裂17连续地到达物体1A的前表面1a 而不会大幅改变其方向。 当在分离对象物10A中产生应力时，断裂部17已到达分离对象物10A的背面10b，因此容易向物体1A延伸。

公开(公告)号：US20160172169A1

公开(公告)日：2016-06-16

申请号：US15043263

申请日：2016-02-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hideki SHIMOI ,  Hiroyuki KYUSHIMA ,  Keisuke INOUE

IPC: H01J43/22

CPC classification number: H01J43/22

Abstract: The present invention relates to an electron multiplier and others to effectively suppress luminescence noise, even in compact size, in which each of multistage dynodes has a plurality of columns each having a peripheral surface separated physically, and in which each column is processed in such a shape that an area or a peripheral length of a section parallel to an installation surface on which the electron multiplier is arranged becomes minimum at a certain position on the peripheral surface in the column of interest.

公开(公告)号：US20150371835A1

公开(公告)日：2015-12-24

申请号：US14841886

申请日：2015-09-01

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroyuki KYUSHIMA ,  Hideki SHIMOI ,  Akihiro KAGEYAMA ,  Keisuke INOUE ,  Masuo ITO

IPC: H01J43/08 ,  H01J9/26

CPC classification number: H01J43/08 ,  H01J9/26 ,  H01J43/04 ,  H01J43/24

Abstract: The present invention relates to a photomultiplier having a structure for making it possible to easily realize high detection accuracy and fine processing, and a method of manufacturing the same. The photomultiplier comprises an enclosure having an inside kept in a vacuum state, whereas a photocathode emitting electrons in response to incident light, an electron multiplier section multiplying in a cascading manner the electron emitted from the photocathode, and an anode for taking out a secondary electron generated in the electron multiplier section are arranged in the enclosure. A part of the enclosure is constructed by a glass substrate having a flat part, whereas each of the electron multiplier section and anode is two-dimensionally arranged on the flat part in the glass substrate.

Abstract translation: 本发明涉及具有能够容易地实现高检测精度和精细处理的结构的光电倍增管及其制造方法。 光电倍增管包括具有内部保持在真空状态的外壳，而响应于入射光发射电子的光电阴极，电子倍增器部分以级联方式从光电阴极发射的电子和用于取出二次电子的阳极 在电子倍增器部分中产生的电极被布置在外壳中。 外壳的一部分由具有平坦部分的玻璃基板构成，而电子倍增器部分和阳极中的每一个二维地布置在玻璃基板的平坦部分上。

公开(公告)号：US20150343562A1

公开(公告)日：2015-12-03

申请号：US14763267

申请日：2013-11-29

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Tsubasa HIROSE ,  Yuu TAKIGUCHI ,  Yasunori IGASAKI ,  Hideki SHIMOI

IPC: B23K26/06 ,  H01L21/67 ,  H01L21/268 ,  B23K26/00

CPC classification number: H01L21/268 ,  B23K26/0006 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/38 ,  B23K26/53 ,  B23K26/55 ,  B23K2103/50 ,  H01L21/67115

Abstract: A laser processing apparatus 1 is an apparatus for forming a modified region R in an object to be processed S by irradiating the object S with laser light L. The laser processing apparatus 1 comprises a laser light source 2 that emits the laser light L, a mount table 8 that supports the object S, and an optical system 11 that converges a ring part surrounding a center part including an optical axis of the laser light L in the laser light L emitted from the laser light source 2 at a predetermined part of the object S supported by the mount table 8. The optical system 11 adjusts a form of at least one of inner and outer edges of the ring part of the laser light L according to a position of the predetermined part in the object S.

Abstract translation: 激光加工装置1是通过用激光L照射被摄体S来形成被处理体S的变形区域R的装置。激光加工装置1包括发射激光L的激光光源2， 支撑物体S的安装台8和将激光光源2发射的激光L中的包括激光L的光轴的中心部分的环形部分会聚在预定部分的光学系统11 对象S由安装台8支撑。光学系统11根据对象S中的预定部分的位置来调整激光L的环部分的内边缘和外边缘中的至少一个的形式。