Process for Preparation of Elemental Chalcogen Solutions and Method of Employing Said Solutions in Preparation of Kesterite Films
    62.
    发明申请
    Process for Preparation of Elemental Chalcogen Solutions and Method of Employing Said Solutions in Preparation of Kesterite Films 审中-公开
    元素硫族元素溶液的制备方法及其制备方法

    公开(公告)号:US20130037111A1

    公开(公告)日:2013-02-14

    申请号:US13207248

    申请日:2011-08-10

    摘要: Techniques for preparing chalcogen-containing solutions using an environmentally benign borane-based reducing agent and solvents under ambient conditions, as well as application of these solutions in a liquid-based method for deposition of inorganic films having copper (Cu), zinc (Zn), tin (Sn), and at least one of sulfur (S) and selenium (Se) are provided. In one aspect, a method for preparing a chalcogen-containing solution is provided. The method includes the following steps. At least one chalcogen element, a reducing agent and a liquid medium are contacted under conditions sufficient to produce a homogenous solution. The reducing agent (i) contains both boron and hydrogen, (ii) is substantially carbon free and (iii) is substantially metal free.

    摘要翻译: 在环境条件下使用环境友好的硼烷类还原剂和溶剂制备含硫属化合物溶液的技术,以及这些溶液在用于沉积具有铜(Cu),锌(Zn) ,锡(Sn)和硫(S)和硒(Se)中的至少一种。 一方面,提供了制备含硫属原子溶液的方法。 该方法包括以下步骤。 在足以产生均匀溶液的条件下接触至少一种硫属元素,还原剂和液体介质。 还原剂(i)含有硼和氢,(ii)基本上不含碳,(iii)基本上不含金属。

    COATING SOLUTION FOR FORMING LIGHT-ABSORBING LAYER, AND METHOD FOR PRODUCING COATING SOLUTION FOR FORMING LIGHT-ABSORBING LAYER
    64.
    发明申请
    COATING SOLUTION FOR FORMING LIGHT-ABSORBING LAYER, AND METHOD FOR PRODUCING COATING SOLUTION FOR FORMING LIGHT-ABSORBING LAYER 审中-公开
    用于形成吸光层的涂料溶液及其制备用于形成吸光层的涂料溶液的方法

    公开(公告)号:US20120313044A1

    公开(公告)日:2012-12-13

    申请号:US13157923

    申请日:2011-06-10

    IPC分类号: C09K11/88 C09K11/66

    摘要: A coating solution for forming a light-absorbing layer of a CZTS solar cell, including a hydrazine-coordinated Cu chalcogenide complex component (A), a hydrazine-coordinated Sn chalcogenide complex component (B) and a hydrazine-coordinated Zn chalcogenide complex component (C) dissolved in dimethylsulfoxide; and a method of producing a coating solution forming a light-absorbing layer a CZTS solar cell, including preparing dimethylsulfoxide having a hydrazine-coordinated Cu chalcogenide complex dissolved therein as a first solution, dissolving a hydrazine-coordinated Sn chalcogenide complex in dimethylsulfoxide to obtain a second solution, dissolving a hydrazine-coordinated Zn chalcogenide complex in dimethylsulfoxide to obtain a third solution, and mixing together the first solution, the second solution and the third solution.

    摘要翻译: 一种用于形成CZTS太阳能电池的光吸收层的涂料溶液,包括肼配位的Cu硫属元素化合物组分(A),肼配位的硫属硫化物络合物组分(B)和肼配位的Zn硫属元素化物络合物组分( C)溶于二甲亚砜; 以及制备形成CZTS太阳能电池的光吸收层的涂布溶液的方法,包括制备溶解有作为第一溶液的肼配位的Cu硫属元素化合物的二甲基亚砜,将肼配位的硫属硫化物配合物溶解在二甲基亚砜中,得到 将肼配位的Zn硫属化物配合物溶解在二甲基亚砜中以得到第三溶液,并将第一溶液,第二溶液和第三溶液混合在一起。

    Thin film crystallization device and method for making a polycrystalline composition
    66.
    发明申请
    Thin film crystallization device and method for making a polycrystalline composition 审中-公开
    薄膜结晶装置及其制造方法

    公开(公告)号:US20120190180A1

    公开(公告)日:2012-07-26

    申请号:US12931067

    申请日:2011-01-24

    摘要: A method for making a polycrystalline composition, wherein the method includes the steps of a) preparing a precursor material, b) heating the precursor material to a reaction temperature in the presence of a precursor vapor supplied from a source at a preselected partial pressure, for a sufficient time to initiate an interaction between the precursor material and the precursor vapor to form a heated precursor material, and c) cooling the heated precursor material at a predetermined cooling rate, optionally, in the presence of the precursor vapor supplied at a partial pressure, to yield the polycrystalline composition. A device for implementing the method of the present invention is also provided

    摘要翻译: 一种制备多晶组合物的方法,其中所述方法包括以下步骤:a)制备前体材料,b)在预选分压下从源提供的前体蒸气存在下,将前体材料加热到反应温度, 足够的时间来引发前体材料和前体蒸气之间的相互作用以形成加热的前体材料,以及c)以预定的冷却速率冷却被加热的前体材料,任选地,在分压下供应的前体蒸气 ,以产生多晶组合物。 还提供了一种用于实现本发明的方法的设备

    Zinc Thin Films Plating Chemistry and Methods
    67.
    发明申请
    Zinc Thin Films Plating Chemistry and Methods 有权
    锌薄膜电镀化学与方法

    公开(公告)号:US20120061250A1

    公开(公告)日:2012-03-15

    申请号:US12878787

    申请日:2010-09-09

    IPC分类号: C25D3/22

    摘要: Techniques for electrodepositing zinc (Zn)-containing films are provided. In one aspect, a method of preparing a Zn electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of at least one zinc salt, a sulfonic acid and a solvent. The sulfonic acid is quenched with a base. A pH of the solution is adjusted to be either less than about 3.5 or greater than about 8.0. The pH of the solution can be adjusted by adding additional sulfonic acid to the solution to adjust the pH of the solution to be less than about 3.5 or by adding a second base to the solution to adjust the pH of the solution to be greater than about 8.0. A Zn electroplating solution and an electroplating method are also provided.

    摘要翻译: 提供了用于电沉积含锌(Zn)的膜的技术。 一方面,提供了制备Zn电镀液的方法。 该方法包括以下步骤。 溶液由至少一种锌盐,磺酸和溶剂的混合物形成。 磺酸用碱淬灭。 将溶液的pH调节至小于约3.5或大于约8.0。 可以通过向溶液中加入另外的磺酸来调节溶液的pH以将溶液的pH调节至小于约3.5,或通过向溶液中加入第二碱以将溶液的pH调节至大于约 8.0。 还提供了Zn电镀溶液和电镀方法。