摘要:
The present invention relates to aqueous processes to make metal chalcogenide nanoparticles that are useful precursors to copper zinc tin sulfide/selenide and copper tin sulfide/selenide. In addition, this invention provides processes for preparing crystalline particles from the metal chalcogenide nanoparticles, as well as processes for preparing inks from both the metal chalcogenide nanoparticles and the crystalline particles.
摘要:
Techniques for preparing chalcogen-containing solutions using an environmentally benign borane-based reducing agent and solvents under ambient conditions, as well as application of these solutions in a liquid-based method for deposition of inorganic films having copper (Cu), zinc (Zn), tin (Sn), and at least one of sulfur (S) and selenium (Se) are provided. In one aspect, a method for preparing a chalcogen-containing solution is provided. The method includes the following steps. At least one chalcogen element, a reducing agent and a liquid medium are contacted under conditions sufficient to produce a homogenous solution. The reducing agent (i) contains both boron and hydrogen, (ii) is substantially carbon free and (iii) is substantially metal free.
摘要:
This invention relates to processes for making kesterite compositions with atypical Cu:Zn:Sn:S ratios and/or kesterite compositions with unusually small coherent domain sizes. This invention also relates to these kesterite compositions and their use in preparing CZTS films.
摘要:
A coating solution for forming a light-absorbing layer of a CZTS solar cell, including a hydrazine-coordinated Cu chalcogenide complex component (A), a hydrazine-coordinated Sn chalcogenide complex component (B) and a hydrazine-coordinated Zn chalcogenide complex component (C) dissolved in dimethylsulfoxide; and a method of producing a coating solution forming a light-absorbing layer a CZTS solar cell, including preparing dimethylsulfoxide having a hydrazine-coordinated Cu chalcogenide complex dissolved therein as a first solution, dissolving a hydrazine-coordinated Sn chalcogenide complex in dimethylsulfoxide to obtain a second solution, dissolving a hydrazine-coordinated Zn chalcogenide complex in dimethylsulfoxide to obtain a third solution, and mixing together the first solution, the second solution and the third solution.
摘要:
The present invention relates to screen-printable quaternary chalcogenide compositions. The present invention also provides a process for creating an essentially pure crystalline layer of the quaternary chacogenide on a substrate. Such coated substrates contain p-type to semiconductors and are useful as the absorber layer in a solar cell.
摘要:
A method for making a polycrystalline composition, wherein the method includes the steps of a) preparing a precursor material, b) heating the precursor material to a reaction temperature in the presence of a precursor vapor supplied from a source at a preselected partial pressure, for a sufficient time to initiate an interaction between the precursor material and the precursor vapor to form a heated precursor material, and c) cooling the heated precursor material at a predetermined cooling rate, optionally, in the presence of the precursor vapor supplied at a partial pressure, to yield the polycrystalline composition. A device for implementing the method of the present invention is also provided
摘要:
Techniques for electrodepositing zinc (Zn)-containing films are provided. In one aspect, a method of preparing a Zn electroplating solution is provided. The method includes the following steps. The solution is formed from a mixture of at least one zinc salt, a sulfonic acid and a solvent. The sulfonic acid is quenched with a base. A pH of the solution is adjusted to be either less than about 3.5 or greater than about 8.0. The pH of the solution can be adjusted by adding additional sulfonic acid to the solution to adjust the pH of the solution to be less than about 3.5 or by adding a second base to the solution to adjust the pH of the solution to be greater than about 8.0. A Zn electroplating solution and an electroplating method are also provided.
摘要:
Disclosed is a manufacturing method for a thin film type light absorbing layer of a solar cell. The manufacturing method for a light absorbing layer includes: filling CIGS crystal powder in an evaporation source of a chamber; simultaneously evaporating the CIGS crystal powder; and depositing the evaporated CIGS crystal powder on a substrate to form a CIGS thin film.
摘要:
Disclosed are a precursor for preparing a light absorption layer of a solar cell including (a) an aggregate-phase composite including a first phase including a copper (Cu)-tin (Sn) bimetallic metal and a second phase including zinc (Zn)-containing chalcogenide, or including the first phase including a copper (Cu)-tin (Sn) bimetallic metal, the second phase including zinc (Zn)-containing chalcogenide and a third phase including copper (Cu)-containing chalcogenide; or (b) core-shell structured nanoparticles including a core including copper (Cu)-tin (Sn) bimetallic metal nanoparticles and a shell including zinc (Zn)-containing chalcogenide, or the zinc (Zn)-containing chalcogenide and copper (Cu)-containing chalcogenide; or (c) a mixture thereof, and a method of preparing the same.
摘要:
Kesterite-based photovoltaic devices formed on flexible ceramic substrates are provided. In one aspect, a method of forming a photovoltaic device includes the steps of: forming a back contact on a flexible ceramic substrate; forming a kesterite absorber layer on a side of the back contact opposite the flexible ceramic substrate; annealing the kesterite absorber layer; forming a buffer layer on a side of the kesterite absorber layer opposite the back contact; and forming a transparent front contact on a side of the buffer layer opposite the kesterite absorber layer. A roll-to-roll-based method of forming a photovoltaic device and a photovoltaic device are also provided.