公开(公告)号：US20230001517A1

公开(公告)日：2023-01-05

申请号：US17900966

申请日：2022-09-01

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Naoto KUSUMOTO

IPC分类号： B23K26/50 ,  B23K26/064 ,  B23K26/08 ,  B32B43/00 ,  B23K26/073

摘要： A laser processing apparatus and a stack processing apparatus are provided. The laser processing apparatus includes a laser oscillator and an optical system for forming a linear beam and an x-y-θ or x-θ stage. With use of the x-y-θ or x-θ stage, the object to be processed can be moved and rotated in the horizontal direction. With this operation, a desired region of the object to be processed can be efficiently irradiated with laser light, and the area occupied by a chamber provided with the x-y-θ or x-θ stage can be made small.

公开(公告)号：US20220379408A1

公开(公告)日：2022-12-01

申请号：US17664739

申请日：2022-05-24

申请人： DISCO CORPORATION

发明人： Koji SHIONO ,  Haruki KAMIYAMA

IPC分类号： B23K26/50 ,  B23K26/064 ,  B23K26/06 ,  B23K26/067 ,  B23K26/082

摘要： A laser beam irradiation unit of a laser processing apparatus includes a first splitting unit that causes a laser beam emitted from a laser oscillator to branch into a first optical path and a second optical path, a first beam condenser that focuses the laser beam having been introduced to the first optical path, and a second beam condenser that focuses the laser beam having been introduced to the second optical path. The laser beam irradiation unit further includes a second splitting unit on the first optical path between the first splitting unit and the first beam condenser that splits the laser beam into at least two laser beams, and a laser beam scanning unit on the second optical path between the first splitting unit and the second beam condenser that executes scanning with the laser beam and introduces the laser beam to the second beam condenser.

公开(公告)号：US11434162B2

公开(公告)日：2022-09-06

申请号：US15769748

申请日：2016-10-16

申请人： Soreq Nucelar Research Center

发明人： Sharone Goldring

IPC分类号： C03B37/029 ,  B23K26/50 ,  H05B1/02

摘要： A radiation pumped heater includes a ceramic substrate which is heated by a laser beam to a steady state temperature. An optical fiber is heated by conduction and radiation emitted from the ceramic substrate.

公开(公告)号：US20220246461A1

公开(公告)日：2022-08-04

申请号：US17648462

申请日：2022-01-20

申请人： DISCO CORPORATION

发明人： Shuzo MITANI

IPC分类号： H01L21/683 ,  H01L21/782 ,  B23K26/50

摘要： A manufacturing method of chips includes forming modified layers that become points of origin of dividing along planned dividing lines, grinding the back surface of the wafer by grinding abrasive stones to thin the wafer into a finished thickness, and dividing the wafer into the chips along the planned dividing lines using the modified layers as the points of origin. The manufacturing method also includes sticking an expanding tape having elasticity to the back surface of the wafer for which grinding processing has been executed, expanding the expanding tape and widening the interval between the respective chips along the planned dividing lines.

公开(公告)号：US20220226934A1

公开(公告)日：2022-07-21

申请号：US17648329

申请日：2022-01-19

申请人： DISCO CORPORATION

发明人： Yuki IKKU ,  Youngsuk KIM

IPC分类号： B23K26/50 ,  H01L23/00

摘要： An electrode welding method includes a laser irradiation apparatus preparation step of preparing a laser irradiation apparatus including a laser oscillator that emits a laser beam with a wavelength having absorbability with respect to a semiconductor chip and a spatial light modulator that adjusts the energy distribution of the laser beam emitted by the laser oscillator, an electrode positioning step of positioning, corresponding to electrodes of a wiring substrate, bump electrodes of a device, and an electrode welding step of irradiating the back surface of the semiconductor chip with the laser beam and welding the bump electrodes to the electrodes of the wiring substrate.

公开(公告)号：US11328956B2

公开(公告)日：2022-05-10

申请号：US17066658

申请日：2020-10-09

申请人： DISCO CORPORATION

发明人： Masaru Nakamura ,  Hisayuki Yamaoka

IPC分类号： H01L21/78 ,  H01L21/304 ,  B23K26/50 ,  B23K101/40

摘要： A wafer processing method includes a modified layer forming step of applying a laser beam of a wavelength having transmitting property to a wafer with a focusing point of the laser beam positioned inside the wafer at positions corresponding to division lines, thereby to form modified layers, and a back side grinding step of holding the wafer on a chuck table of a grinding apparatus, grinding a back side of the wafer to thin the wafer, and dividing the wafer into individual device chips from cracks that are generated from the modified layers formed inside the wafer along the division lines to the division lines formed on a front side of the wafer. In the modified layer forming step, in a case where triangular chips each having a surface area smaller than the device chips are to be formed, the application of the laser beam is stopped in a region where the triangular chips are to be formed.

公开(公告)号：US11201081B2

公开(公告)日：2021-12-14

申请号：US16563442

申请日：2019-09-06

申请人： Siltectra GmbH

发明人： Wolfram Drescher ,  Jan Richter

IPC分类号： H01L21/762 ,  B23K26/50 ,  B23K26/53 ,  C30B33/06 ,  B28D1/22 ,  B23K103/00

摘要： Providing a solid body to be split into a number of layers of solid material, introducing or generating defects in the solid body in order to determine a first detachment plane (8) along which a first layer of solid material is separated from the solid body, providing a receiving layer for holding the layer of solid material on the solid body, applying heat to the receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the first layer of solid material from the solid body, then providing a second receiving layer for holding another layer of solid material on the solid body reduced by the first layer of solid material, introducing or generating defects in the solid body in order to determine a second detachment plane (9) along which a second layer of solid material is separated from the solid body, applying heat to the second receiving layer in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the second detachment plane, which crack separates the second layer of solid material from the solid body.

公开(公告)号：US11111170B2

公开(公告)日：2021-09-07

申请号：US16097999

申请日：2017-05-04

申请人： CORNING INCORPORATED

发明人： Bradley Frederick Bowden ,  Xiaoju Guo ,  Thomas Hackert ,  Garrett Andrew Piech ,  Kristopher Allen Wieland

IPC分类号： B23K26/38 ,  B23K26/50 ,  C03B33/02 ,  C03B33/04 ,  C03B33/09 ,  B23K26/53 ,  B23K103/00

摘要： A method for cutting, separating and removing interior contoured shapes in thin substrates, particularly glass substrates. The method involves the utilization of an ultra-short pulse laser to form defect lines in the substrate that may be followed by use of a second laser beam to promote isolation of the part defined by the interior contour.

公开(公告)号：US20210125870A1

公开(公告)日：2021-04-29

申请号：US17066658

申请日：2020-10-09

申请人： DISCO CORPORATION

发明人： Masaru Nakamura ,  Hisayuki Yamaoka

IPC分类号： H01L21/78 ,  B23K26/50 ,  H01L21/304

摘要： A wafer processing method includes a modified layer forming step of applying a laser beam of a wavelength having transmitting property to a wafer with a focusing point of the laser beam positioned inside the wafer at positions corresponding to division lines, thereby to form modified layers, and a back side grinding step of holding the wafer on a chuck table of a grinding apparatus, grinding a back side of the wafer to thin the wafer, and dividing the wafer into individual device chips from cracks that are generated from the modified layers formed inside the wafer along the division lines to the division lines formed on a front side of the wafer. In the modified layer forming step, in a case where triangular chips each having a surface area smaller than the device chips are to be formed, the application of the laser beam is stopped in a region where the triangular chips are to be formed.

公开(公告)号：US20210008661A1

公开(公告)日：2021-01-14

申请号：US16910655

申请日：2020-06-24

申请人： DISCO CORPORATION

发明人： Atsushi UEKI ,  Yutaka KOBAYASHI

IPC分类号： B23K26/08 ,  B23K26/06 ,  B23K26/364 ,  B23K26/50 ,  H01L21/67 ,  H01L21/683

摘要： A calculating section of a control unit calculates a vertical position Defocus for a condensing lens using a height value H1 of a modified layer in a wafer that is set by a setting section according to the equation (1) below. Defocus=(thickness T1 of wafer−height value H1−b)/a  (1) The calculating section calculates an appropriate vertical position for the condensing lens according to the equation (1) depending on the height value H1 of the modified layer that is set by the setting section. Therefore, the vertical position of the condensing lens in laser processing operation can be determined more easily, and a time-consuming and tedious experiment for fine adjustment of the vertical position of the condensing lens does not need to be conducted.