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公开(公告)号:US12085863B2
公开(公告)日:2024-09-10
申请号:US18138383
申请日:2023-04-24
Applicant: ASML NETHERLANDS B.V.
Inventor: Jiyou Fu
CPC classification number: G03F7/70625 , G06T7/001 , G06T2207/10061 , G06T2207/30148
Abstract: A method for determining stochastic edge placement error associated with a pattern. The method includes acquiring, via a metrology tool, a plurality of images of the pattern at a defined location on the substrate without performing a substrate alignment therebetween; and generating at least two data: (i) first data associated with the pattern using a first set of images of the plurality of images, and (ii) second data associated with the pattern using a second set of images of the plurality of images. The first set of images and the second set of images include at least one different image. The method further includes determining (e.g., via a decomposition algorithm), using the first data and the second data associated with the pattern at the defined location, the stochastic edge placement error associated with the pattern.
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公开(公告)号:US12085862B2
公开(公告)日:2024-09-10
申请号:US17633643
申请日:2020-08-14
Applicant: ASML Netherlands B.V.
Inventor: Matthew Ryan Graham , Spencer Rich , Sean W. McGrogan
CPC classification number: G03F7/70266 , G03F7/70033 , H05G2/008
Abstract: Disclosed is an apparatus and a method in which off-droplet measurements instead of on-droplet measurements of prepulse energy are used for pulse energy control. Prepulse energy is measured during an off-droplet nonexposure period and controlled to a prepulse energy setpoint. The prepulse energy can then be controlled open-loop to the prepulse energy setpoint during on-droplet periods. This effectively decouples the EUV dose control loop from the prepulse energy control loop and avoids negative side effects of coupling such loops, for example, loss of the part of the dose adjustment range available to the dose controller.
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公开(公告)号:US12072620B2
公开(公告)日:2024-08-27
申请号:US17278356
申请日:2019-10-02
Applicant: ASML NETHERLANDS B.V.
Inventor: Pieter-Jan Van Zwol , Sander Baltussen , Dennis De Graaf , Johannes Christiaan Leonardus Franken , Adrianus Johannes Maria Giesbers , Alexander Ludwig Klein , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Alexey Sergeevich Kuznetsov , Arnoud Willem Notenboom , Mahdiar Valefi , Marcus Adrianus Van de Kerkhof , Wilhelmus Theodorus Anthonius Johannes Van den Einden , Ties Wouter Van der Woord , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov
CPC classification number: G03F1/64 , G03F7/7015
Abstract: A method for manufacturing a membrane assembly for EUV lithography, the method including: providing a stack including: at least one membrane layer supported by a planar substrate, wherein the planar substrate has an inner region and a border region around the inner region; and a first sacrificial layer between the planar substrate and the membrane layer; selectively removing the inner region of the planar substrate such that the membrane assembly has: a membrane formed from the at least one membrane layer, and a border holding the membrane, the border having the border region of the planar substrate and the first sacrificial layer situated between the border region and the membrane layer, wherein the selectively removing the inner region of the planar substrate includes using an etchant which has a similar etch rate for the membrane layer and its oxide and a substantially different etch rate for the first sacrificial layer.
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公开(公告)号:US20240280909A1
公开(公告)日:2024-08-22
申请号:US18567931
申请日:2022-06-23
Applicant: ASML Netherlands B.V.
CPC classification number: G03F7/70266 , G02B26/0825 , G03F7/70233 , G03F7/70833
Abstract: A deformable mirror system (300, 400, 500), comprising a monolithic support structure (310, 410, 510), comprising a first side (311) configured to receive a mirror (350, 450, 550); and a second side (312) configured to receive a plurality of actuators (460, 560) such that the actuators are positioned to enable selective deformation of a reflective surface (351, 451, 551) of the mirror.
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公开(公告)号:US20240280517A1
公开(公告)日:2024-08-22
申请号:US18569504
申请日:2022-06-28
Applicant: ASML NETHERLANDS B.V.
Inventor: Albertus Victor Gerardus MANGNUS
IPC: G01N23/2206 , G01N23/203 , G01N23/2251
CPC classification number: G01N23/2206 , G01N23/203 , G01N23/2251
Abstract: A detector for use in a charged particle device for an assessment apparatus to detect charged particles from a sample, wherein the detector includes: a backscatter detector component set to a backscatter bias electric potential and configured to detect higher energy charged particles; and a secondary detector component set to a secondary bias electric potential and configured to detect lower energy charged particles, wherein there is a potential difference between the backscatter bias electric potential and the secondary bias electric potential.
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公开(公告)号:US12066764B2
公开(公告)日:2024-08-20
申请号:US18143825
申请日:2023-05-05
Applicant: ASML Netherlands B.V.
Inventor: Patricius Aloysius Jacobus Tinnemans , Patrick Warnaar , Vasco Tomas Tenner , Maurits Van Der Schaar
IPC: G03F7/00 , G01R31/265
CPC classification number: G03F7/706839 , G01R31/2656 , G03F7/70633
Abstract: Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.
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公开(公告)号:US12066758B2
公开(公告)日:2024-08-20
申请号:US17728608
申请日:2022-04-25
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor: David Ferdinand Vles , Erik Achilles Abegg , Aage Bendiksen , Derk Servatius Gertruda Brouns , Pradeep K. Govil , Paul Janssen , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , James Norman Wiley
CPC classification number: G03F1/64 , G03F1/22 , G03F1/62 , G03F7/7085 , G03F7/70916 , G03F7/70983
Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
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公开(公告)号:US20240272516A1
公开(公告)日:2024-08-15
申请号:US18570289
申请日:2022-05-20
Applicant: ASML NETHERLANDS B.V.
IPC: G02F1/383
CPC classification number: G02F1/383
Abstract: An assembly for receiving a pump radiation to interact with a gas medium at an interaction space to generate an emitted radiation. The assembly comprising: an object with a hollow core, wherein the hollow core has an elongated volume through the object, wherein the interaction space is located inside the hollow core, and a heat conductive structure that connects at multiple locations of an outside wall of the object for transferring heat generated at the interaction space away from the object.
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公开(公告)号:US12061421B2
公开(公告)日:2024-08-13
申请号:US17629053
申请日:2020-07-17
Applicant: ASML Netherlands B.V.
Inventor: Arie Jeffrey Den Boef , Kaustuve Bhattacharyya , Keng-Fu Chang , Simon Gijsbert Josephus Mathijssen
IPC: G03F7/00
CPC classification number: G03F7/70633
Abstract: Methods and systems for determining information about a target structure are disclosed. In one arrangement, a value of an asymmetry indicator for the target structure is obtained. The value of the asymmetry indicator represents an amount of an overlay independent asymmetry in the target structure. An error in an initial overlay measurement performed on the target structure at a previous time is estimated. The estimation is performed using the obtained value of the asymmetry indicator and a relationship between values of the asymmetry indicator and overlay measurement errors caused at least partially by overlay independent asymmetries. An overlay in the target structure is determined using the initial overlay measurement and the estimated error.
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公开(公告)号:US20240264540A1
公开(公告)日:2024-08-08
申请号:US18565964
申请日:2022-06-15
Applicant: ASML Netherlands B.V.
IPC: G03F7/00 , H01L21/67 , H01L21/683
CPC classification number: G03F7/70708 , G03F7/70033 , G03F7/70758 , G03F7/70775 , G03F7/70783 , G03F7/70841 , G03F7/7085 , G03F7/70875 , H01L21/67109 , H01L21/67248 , H01L21/6831 , H01L21/6838
Abstract: A substrate holder for holding a substrate comprising a frame and a surface clamping device arranged on an underside of the frame configured to electrostatically attract an upper surface of the substrate from above the substrate. The substrate holder can be used to contactlessly hold and deform the substrate and thereby control a shape of the substrate. The substrate holder is suitable for use in a semiconductor processing apparatus and can operate in a vacuum or near-vacuum environment, such as in an EUV lithographic apparatus.
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