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公开(公告)号:US12066758B2
公开(公告)日:2024-08-20
申请号:US17728608
申请日:2022-04-25
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor: David Ferdinand Vles , Erik Achilles Abegg , Aage Bendiksen , Derk Servatius Gertruda Brouns , Pradeep K. Govil , Paul Janssen , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , James Norman Wiley
CPC classification number: G03F1/64 , G03F1/22 , G03F1/62 , G03F7/7085 , G03F7/70916 , G03F7/70983
Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
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公开(公告)号:US10466585B2
公开(公告)日:2019-11-05
申请号:US16062017
申请日:2016-12-02
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor: David Ferdinand Vles , Erik Achilles Abegg , Aage Bendiksen , Derk Servatius Gertruda Brouns , Pradeep K. Govil , Paul Janssen , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , James Norman Wiley
Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle includes at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle.
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公开(公告)号:US11347142B2
公开(公告)日:2022-05-31
申请号:US17206649
申请日:2021-03-19
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor: David Ferdinand Vles , Erik Achilles Abegg , Aage Bendiksen , Derk Servatius Gertruda Brouns , Pradeep K. Govil , Paul Janssen , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , James Norman Wiley
Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
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公开(公告)号:US10983431B2
公开(公告)日:2021-04-20
申请号:US16667956
申请日:2019-10-30
Applicant: ASML NETHERLANDS B.V. , ASML HOLDING N.V.
Inventor: David Ferdinand Vles , Erik Achilles Abegg , Aage Bendiksen , Derk Servatius Gertruda Brouns , Pradeep K. Govil , Paul Janssen , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , James Norman Wiley
Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
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公开(公告)号:US11971654B2
公开(公告)日:2024-04-30
申请号:US18208188
申请日:2023-06-09
Applicant: ASML NETHERLANDS B.V.
Inventor: Pieter-Jan Van Zwol , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Evgenia Kurganova , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Leonid Aizikovitsj Sjmaenok , Ties Wouter Van Der Woord , David Ferdinand Vles
IPC: G03F1/62
CPC classification number: G03F1/62
Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
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公开(公告)号:US11287737B2
公开(公告)日:2022-03-29
申请号:US16761683
申请日:2018-11-05
Applicant: ASML NETHERLANDS B.V.
Inventor: Pieter-Jan Van Zwol , Adrianus Johannes Maria Giesbers , Johan Hendrik Klootwijk , Evgenia Kurganova , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Mária Péter , Leonid Aizikovitsj Sjmaenok , Ties Wouter Van Der Woord , David Ferdinand Vles
IPC: G03F1/62
Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
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公开(公告)号:US20210109438A1
公开(公告)日:2021-04-15
申请号:US17130537
申请日:2020-12-22
Applicant: ASML NETHERLANDS B.V.
Inventor: Maxim Aleksandrovich Nasalevich , Erik Achilles Abegg , Nirupam Banerjee , Michiel Alexander Blauw , Derk Servatius Gertruda Brouns , Paul Janssen , Matthias Kruizinga , Egbert Lenderink , Nicolae Maxim , Andrey Nikipelov , Arnoud Willem Notenboom , Claudia Piliego , Mária Péter , Gijsbert Rispens , Nadja Schuh , Marcus Adrianus Van De Kerkhof , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Antonius Willem Verburg , Johannes Petrus Martinus Bernardus Vermeulen , David Ferdinand Vles , Willem-Pieter Voorthuijzen , Aleksandar Nikolov Zdravkov
Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
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公开(公告)号:US12117726B2
公开(公告)日:2024-10-15
申请号:US18220799
申请日:2023-07-11
Applicant: ASML NETHERLANDS B.V.
Inventor: David Ferdinand Vles , Chaitanya Krishna Ande , Antonius Franciscus Johannes De Groot , Adrianus Johannes Maria Giesbers , Johannes Joseph Janssen , Paul Janssen , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Marcel Peter Meijer , Wouter Rogier Meijerink , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Raymond Olsman , Hrishikesh Patel , Mária Péter , Gerrit van den Bosch , Wilhelmus Theodorus Anthonius Johannes van den Einden , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov
IPC: G03F1/64
CPC classification number: G03F1/64
Abstract: A pellicle assembly includes a pellicle frame defining a surface onto which a pellicle is, or to be, attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. A pellicle assembly for a patterning device, the pellicle assembly includes one or more actuators for moving the pellicle assembly towards and way from the patterning device.
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公开(公告)号:US11754918B2
公开(公告)日:2023-09-12
申请号:US17548944
申请日:2021-12-13
Applicant: ASML NETHERLANDS B.V.
Inventor: David Ferdinand Vles , Chaitanya Krishna Ande , Antonius Franciscus Johannes De Groot , Adrianus Johannes Maria Giesbers , Johannes Joseph Janssen , Paul Janssen , Johan Hendrik Klootwijk , Peter Simon Antonius Knapen , Evgenia Kurganova , Marcel Peter Meijer , Wouter Rogier Meijerink , Maxim Aleksandrovich Nasalevich , Arnoud Willem Notenboom , Raymond Olsman , Hrishikesh Patel , Mária Péter , Gerrit Van Den Bosch , Wilhelmus Theodorus Anthonius Johannes Van Den Einden , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Johannes Petrus Martinus Bernardus Vermeulen , Willem-Pieter Voorthuijzen , Hendrikus Jan Wondergem , Aleksandar Nikolov Zdravkov
IPC: G03F1/64
CPC classification number: G03F1/64
Abstract: The invention relates to a pellicle assembly comprising a pellicle frame defining a surface onto which a pellicle is attached. The pellicle assembly comprises one or more three-dimensional expansion structures that allow the pellicle to expand under stress. The invention also relates to a pellicle assembly for a patterning device comprising one or more actuators for moving the pellicle assembly towards and way from the patterning device.
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10.
公开(公告)号:US10228615B2
公开(公告)日:2019-03-12
申请号:US15320749
申请日:2015-07-02
Applicant: ASML Netherlands B.V.
Inventor: Andrey Alexandrovich Nikipelov , Vadim Yevgenyevich Banine , Jozef Petrus Henricus Benschop , Arjen Boogaard , Florian Didier Albin Dhalluin , Alexey Sergeevich Kuznetsov , Mária Péter , Luigi Scaccabarozzi , Willem Joan Van Der Zande , Pieter-Jan Van Zwol , Andrei Mikhailovich Yakunin
Abstract: A membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane includes one or more high doped regions wherein the membrane is doped with a dopant concentration greater than 1017 cm−3, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein the high doped regions are comprised within some or all of the additional layers.
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