Abstract:
Provided are a non-volatile memory device and a programming method. The programming method includes applying a program voltage to a selected word line, applying an elevated pass voltage to word lines adjacent to the selected word line in a plurality of word lines, and applying a pass voltage to remaining word lines in the plurality of word lines.
Abstract:
A hybrid type developing apparatus and method forms a magnetic brush of non-magnetic toner and a magnetic carrier on a circumference of a magnetic roller forms a uniform toner layer on the circumference of a donor roller using only toner from the magnetic roller, and develops an electrostatic latent image on an image receptor. The hybrid type developing apparatus includes: a plurality of electrodes on the circumference of the donor roller; first and second brush electrodes in an upstream area and a downstream area, respectively, of the donor roller facing the magnetic roller with respect to a direction of rotation; and a bias applying device for applying a recovery bias to the first brush electrode to remove toner from the donor roller and a supply bias to the second brush electrode to supply toner from the magnetic roller to the donor roller.
Abstract:
A NAND flash memory device includes a control circuit configured to apply, during a program operation, a first word line voltage to non-selected ones of a plurality of serially-connected memory cells, a second word line voltage greater than the first word line voltage to a selected one of the plurality of memory cells, and a third word line voltage lower than the first word line voltage to a dummy memory cell connected in series with the plurality of memory cells. In other embodiments, a control circuit is configured to program a dummy memory cell before and/or after each erase operation on a plurality of memory cells connected in series therewith. In still other embodiments, a control circuit is configured to forego erasure of a dummy memory cell while erasing a plurality of memory cells connected in series therewith.
Abstract:
There is provided a frequency-variable oscillator that varies, even when a frequency of an input signal is varied, a frequency of an oscillation signal according to the varied frequency of the input signal. A frequency-variable oscillator according to an aspect of the invention includes: a voltage-to-current converter circuit converting a voltage level of an input signal into a current level within a predetermined range; and an oscillator circuit varying a frequency according to the current level from the voltage-to-current converter circuit and oscillating the varied frequency.
Abstract:
A nonvolatile memory device that utilizes both a voltage provided outside the memory device and a voltage generated within the device instead of using only a voltage generated within the device as a driving voltage avoids malfunctions of the memory device when instantaneous significant voltage drops occur. The nonvolatile memory device includes a plurality of nonvolatile memory cells, a bit line coupled to at least a portion of the plurality of nonvolatile memory cells, a column-selection transistor coupled to the bit line and a driving circuit. The driving circuit is coupled to a gate of the column-selection transistor and is configured to supply a charge to the gate using a first voltage and a second voltage wherein the second voltage is higher than the first voltage.
Abstract:
Disclosed is a semiconductor silicon wafer having an electric power supply affixed to the backside of the wafer. By fabricating the electric power supply onto the backside of the wafer that has been left unused, the semiconductor chip can have a self-supplied power, realizing the self-powered semiconductor chip with an increased efficiency. Further, since the electric power supply is installed on the wafer, not the semiconductor chip, the fabrication procedure becomes very simple, and the battery can be mounted on any type of chip.
Abstract:
A transistor having an electrode layer that can reduce or prevent a coupling effect, a fabricating method thereof, and an image sensor having the same are provided. The transistor includes a semiconductor substrate and a well of a first conductivity type formed on the semiconductor substrate. A heavily-doped first impurity region of a first conductivity type surrounds an active region defined in the well. Heavily-doped second and third impurity regions of a second conductivity type are spaced apart from each other in the active region an define a channel region interposed therebetween. A gate is formed over the channel region to cross the active region. The gate overlaps at least a portion of the first impurity region and receives a first voltage. An electrode layer is formed between the semiconductor substrate and the gate, such that the electrode layer overlaps a portion of the first impurity region contacting the channel region and receives a second voltage. An insulation layer is formed between the semiconductor substrate and the electrode layer, the semiconductor substrate and the gate, and the electrode layer and the gate. The insulation layer surrounds the electrode layer.
Abstract:
A method and an apparatus for editing an image are provided. The present image editing method includes recording by coding edit information in a predetermined field of an original image frame, and displaying either the original image or an image edited based on the edit information. Accordingly, the edit information is recorded in a blank field of the original frame without damaging the original image, and thus, the image frame can be efficiently stored without wasting storage space.
Abstract:
A liquid crystal display backlight inverter including a first error amplifying unit receiving and comparing a first detection voltage corresponding to a current flowing through a lamp with a first preset reference voltage and outputting a first error voltage corresponding to an error therebetween; a second error amplifying unit receiving and comparing a second detection voltage corresponding to a voltage applied to the lamp with a second preset reference voltage and outputting a second error voltage corresponding to an error therebetween; a feedback selector selecting one of the outputs of the first and second error amplifying unit according to an error between the second detection voltage and a third preset reference voltage; and a lamp control pulse generator generating a pulse signal having a duty controlled according to one of the first error voltage and second error voltage.
Abstract:
In a driving circuit for an LCD backlight, a fundamental wave generator generates a triangle wave signal and a square wave signal in accordance with time constant of a time constant circuit including a time constant capacitor. A PWM comparator compares a difference signal between a feedback voltage and a preset reference voltage with the triangle wave signal to generate a PWM signal in response to the comparison result. A signal synchronizer sets a connection node between the time constant capacitor and the fundamental wave generator and an output terminal of the square wave signal in accordance with a power level of the LCD backlight. Also, a driving signal generator generates a driving signal in response to the square wave signal from the fundamental wave generator and the PWM signal from the PWM comparator. The driving circuit enables PWM controlling integrated circuits to be synchronized together.