公开(公告)号：US06374099B1

公开(公告)日：2002-04-16

申请号：US09307911

申请日：1999-05-10

申请人： Qi Bi ,  Ching Yao Huang ,  Frances Jiang ,  Yuen-Yin L. Koo ,  Amit Shah

发明人： Qi Bi ,  Ching Yao Huang ,  Frances Jiang ,  Yuen-Yin L. Koo ,  Amit Shah

IPC分类号： H04M1100

CPC分类号： H04W48/06 ,  H04W4/90 ,  H04W76/50

摘要： A high priority and/or emergency overload access control system treats a wireless unit as a higher priority wireless unit when the wireless unit is attempting to access a wireless communications system with a high priority call, such as an emergency call. For example, the overload access control system can recognize if the wireless unit is attempting to initiate a call to an emergency number. If so, the wireless unit can perform a persistence test as an emergency class (e.g. overload class 10-15) wireless unit in attempting to access the wireless communications system. Thus, the wireless unit will experience an increased probability of passing the persistence test and thereby reducing the persistence delay in attempting to access the wireless communications system with the emergency call.

摘要翻译： 当无线单元试图访问诸如紧急呼叫的高优先级呼叫的无线通信系统时，高优先级和/或紧急过载接入控制系统将无线单元视为较高优先级的无线单元。 例如，过载访问控制系统可以识别无线单元是否尝试发起对紧急号码的呼叫。 如果是这样，则无线单元可以在尝试访问无线通信系统时作为紧急类（例如，过载类10-15）无线单元执行持久性测试。 因此，无线单元将经历增加的持久性测试的概率，从而减少尝试在紧急呼叫中访问无线通信系统时的持续延迟。

公开(公告)号：US06240287B1

公开(公告)日：2001-05-29

申请号：US09167157

申请日：1998-10-06

申请人： Terry Si-Fong Cheng ,  Ching Yao Huang ,  Joe Huang ,  Bee Yun Yu

发明人： Terry Si-Fong Cheng ,  Ching Yao Huang ,  Joe Huang ,  Bee Yun Yu

IPC分类号： H04Q730

CPC分类号： H04W48/06 ,  H04W24/10 ,  H04W36/00

摘要： Call processing overload at a base station of a cellular wireless network is controlled by monitoring a level of call processing at the base station, and reducing a present handoff rate for active users when the call processing level exceeds a first threshold less than a maximum call processing capacity. When the call processing level at the base station exceeds a second threshold greater than the first threshold, a present rate of call originations or terminations is reduced while further reducing the handoff rate.

摘要翻译： 在蜂窝无线网络的基站处的呼叫处理过载通过监视基站处的呼叫处理级别来控制，并且当呼叫处理级别超过小于最大呼叫处理的第一阈值时，降低活动用户的当前切换速率 容量。 当基站的呼叫处理级别超过大于第一阈值的第二阈值时，减少呼叫发起或终止的当前速率，同时进一步降低切换速率。

公开(公告)号：US4837513A

公开(公告)日：1989-06-06

申请号：US283059

申请日：1988-12-05

申请人： Ching Yao

发明人： Ching Yao

IPC分类号： G01R33/561

CPC分类号： G01R33/561

摘要： Reduced T2 decay is achieved through use of at least one asymmetrically truncated RF nutation pulse and an asymmetrically sampled NMR RF response with missing asymmetric data being supplied by complex conjugate synthesis.

摘要翻译： 通过使用至少一个不对称截断的RF章动脉冲和通过复共轭合成提供缺失的不对称数据的不对称采样的NMR RF响应来实现减少的T2衰减。

公开(公告)号：US11603876B2

公开(公告)日：2023-03-14

申请号：US16886707

申请日：2020-05-28

申请人： Ching-Yao Chou

发明人： Ching-Yao Chou

IPC分类号： F16B7/10

摘要： A telescopic tube is disclosed. By pressing and rotating a switching button, an abutting section is aligned to a first hole of an outer tube and then elastically pushed by an elastic member, a pin section of the switching button is released from engagement with a fastening hole of the inner tube, and the position of the inner tube in the outer tube can be adjusted individually. After the inner tube is adjusted completely and the switching button is pressed to rotated again, the pin section is inserted into the fastening hole, the engaging section is engaged in the first hole. When the switching button is pressed, the movement of the inner tube makes the switching button release from the first hole and the third hole, and the inner tube, the control assembly and the inner mounting member are retractable in the through hole of the outer tube.

公开(公告)号：US20160155820A1

公开(公告)日：2016-06-02

申请号：US15018672

申请日：2016-02-08

申请人： Tsung-Yi Huang ,  Ching-Yao Yang ,  Wen-Yi Liao ,  Hung-Der Su ,  Kuo-Cheng Chang

发明人： Tsung-Yi Huang ,  Ching-Yao Yang ,  Wen-Yi Liao ,  Hung-Der Su ,  Kuo-Cheng Chang

IPC分类号： H01L29/66 ,  H01L21/762 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08

CPC分类号： H01L29/66681 ,  H01L21/76202 ,  H01L21/76224 ,  H01L21/76229 ,  H01L29/0649 ,  H01L29/0852 ,  H01L29/1095 ,  H01L29/6681 ,  H01L29/7816

摘要： The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

公开(公告)号：US08938771B2

公开(公告)日：2015-01-20

申请号：US13485948

申请日：2012-06-01

申请人： Yuan-Jih Chu ,  Liang-Wei Huang ,  Ching-Yao Su ,  Ming-Feng Hsu

发明人： Yuan-Jih Chu ,  Liang-Wei Huang ,  Ching-Yao Su ,  Ming-Feng Hsu

IPC分类号： H04N7/173 ,  H04L25/02 ,  H04N21/4363

CPC分类号： H04L25/0278 ,  H04L25/0272 ,  H04N21/43635

摘要： A network receiver includes a first variable resistor, a second variable resistor, a first processing unit, a second processing unit and an adjusting circuit. The first variable resistor is coupled to a first transmission line via a first terminal for transmitting a first signal. The second variable resistor is coupled to a second transmission line via a second terminal for transmitting a second signal. The first processing unit is utilized for obtaining a difference according to the first signal and the second signal, and processing the difference to generate first data. The second processing unit is utilized for obtaining a summation according to the first signal and the second signal, and processing the summation to generate second data. The adjusting circuit is utilized for adjusting resistance(s) of at least one of the first variable resistor and the second variable resistor according to the first data and the second data.

摘要翻译： 网络接收机包括第一可变电阻器，第二可变电阻器，第一处理单元，第二处理单元和调整电路。 第一可变电阻器经由用于发送第一信号的第一端子耦合到第一传输线。 第二可变电阻器经由用于发送第二信号的第二端子耦合到第二传输线。 第一处理单元用于根据第一信号和第二信号获得差值，并且处理该差以产生第一数据。 第二处理单元用于根据第一信号和第二信号获得求和，并且处理求和以产生第二数据。 调整电路用于根据第一数据和第二数据调整第一可变电阻器和第二可变电阻器中的至少一个的电阻。

公开(公告)号：US20140120676A1

公开(公告)日：2014-05-01

申请号：US14146548

申请日：2014-01-02

申请人： Ching-Yao Yang ,  Tsung-Yi Huang ,  Huan-Ping Chu ,  Hung-Der Su

发明人： Ching-Yao Yang ,  Tsung-Yi Huang ,  Huan-Ping Chu ,  Hung-Der Su

IPC分类号： H01L21/8234 ,  H01L29/66

CPC分类号： H01L29/4238 ,  H01L21/28114 ,  H01L21/823425 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

摘要： The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance.

公开(公告)号：US08709900B1

公开(公告)日：2014-04-29

申请号：US14146548

申请日：2014-01-02

申请人： Ching-Yao Yang ,  Tsung-Yi Huang ,  Huan-Ping Chu ,  Hung-Der Su

发明人： Ching-Yao Yang ,  Tsung-Yi Huang ,  Huan-Ping Chu ,  Hung-Der Su

IPC分类号： H01L21/336

CPC分类号： H01L29/4238 ,  H01L21/28114 ,  H01L21/823425 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

摘要： The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance.

公开(公告)号：US08653594B2

公开(公告)日：2014-02-18

申请号：US13066622

申请日：2011-04-20

申请人： Ching-Yao Yang ,  Tsung-Yi Huang ,  Huan-Ping Chu ,  Hung-Der Su

发明人： Ching-Yao Yang ,  Tsung-Yi Huang ,  Huan-Ping Chu ,  Hung-Der Su

IPC分类号： H01L29/66

CPC分类号： H01L29/4238 ,  H01L21/28114 ,  H01L21/823425 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7835

摘要： The present invention discloses a double diffused metal oxide semiconductor (DMOS) device and a manufacturing method thereof. The DMOS device includes: an isolation structure for defining device regions; a gate with a ring-shaped structure; a drain located outside the ring; and a lightly doped drain, a source, and a body electrode located inside the ring. To increase the sub-threshold voltage at the corners of the gate, the corners are located completely on the isolation structure, or the lightly doped drain is apart from the corners by a predetermined distance.

公开(公告)号：US20130134541A1

公开(公告)日：2013-05-30

申请号：US13420279

申请日：2012-03-14

申请人： Shih-Chieh Chang ,  Jian-Shin Tsai ,  Chih-Chang Huang ,  Ing-Ju Lee ,  Ching-Yao Sun ,  Jyun-Ru Wu ,  Ching-Che Huang ,  Szu-An Wu ,  Ying-Lang Wang

发明人： Shih-Chieh Chang ,  Jian-Shin Tsai ,  Chih-Chang Huang ,  Ing-Ju Lee ,  Ching-Yao Sun ,  Jyun-Ru Wu ,  Ching-Che Huang ,  Szu-An Wu ,  Ying-Lang Wang

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14685

摘要： A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.

摘要翻译： 一种器件包括具有正面和背面的半导体衬底。 光敏器件设置在半导体衬底的表面处，其中光敏器件被配置为从半导体衬底的背面接收光信号，并将光信号转换为电信号。 在半导体衬底的背面设有非晶态粘接层。 非晶态粘合层包括氮和金属的化合物。 金属屏蔽层设置在半导体衬底的背面并与非晶态粘合层接触。