公开(公告)号：US08330320B2

公开(公告)日：2012-12-11

申请号：US12768186

申请日：2010-04-27

申请人： Keiji Nakamura ,  Makoto Takabatake ,  Hideyuki Uzawa ,  Masahiro Takahashi ,  Yoshinori Horiuchi ,  Takao Asada ,  Osamu Sakaguchi

发明人： Keiji Nakamura ,  Makoto Takabatake ,  Hideyuki Uzawa ,  Masahiro Takahashi ,  Yoshinori Horiuchi ,  Takao Asada ,  Osamu Sakaguchi

IPC分类号： H01R39/04

CPC分类号： C22C5/06 ,  B22F7/08 ,  B32B15/018 ,  C22C1/0466 ,  C22C1/1084 ,  C22F1/14 ,  H01R39/025 ,  Y10T428/12611

摘要： [Problem to be Solved]There is provided a highly wear-resistant and durable sliding contact material applicable to a commutator of a motor used for high-capacity applications in which the initial starting current (IS) is 1 ampere or higher.[Solution]The present invention provides a sliding contact material in which metal oxide particles are dispersed in an Ag alloy matrix, wherein the Ag alloy matrix is an Ag alloy containing 0.01 to 10.0 wt % of at least one kind of Fe, Co, Ni and Cu in Ag, and 0.1 to 3.0 wt % of a Ta oxide is dispersed as the metal oxide. In the present invention, 0.1 to 10.0 wt % of metal oxide particles of one kind or two or more kinds of Mg, Fe, Co, Ni and Zn may further be dispersed. The sliding contact material is used in a mode of clad composite material formed by embedding the sliding contact material in a part of a base material consisting of Cu or Cu alloy.

摘要翻译： [待解决的问题]提供了一种高耐磨耐用的滑动触点材料，其适用于初始起动电流（IS）为1安培或更高的用于高容量应用的电动机的换向器。 [解决方案]本发明提供一种滑动接触材料，其中金属氧化物颗粒分散在Ag合金基体中，其中Ag合金基体是含有0.01至10.0重量％的至少一种Fe，Co，Ni Ag中的Cu和作为金属氧化物的0.1〜3.0重量％的Ta氧化物被分散。 在本发明中，还可以分散0.1〜10.0重量％的Mg，Fe，Co，Ni，Zn中的1种或2种以上的金属氧化物粒子。 滑动接触材料用于通过将滑动接触材料嵌入由Cu或Cu合金构成的基底材料的一部分而形成的复合材料的形式。

公开(公告)号：US08319218B2

公开(公告)日：2012-11-27

申请号：US12897160

申请日：2010-10-04

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Takashi Shimazu

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Akiharu Miyanaga ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Takashi Shimazu

IPC分类号： H01L29/10

CPC分类号： H01L29/7869 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to provide an oxide semiconductor layer having a novel structure which is preferably used for a semiconductor device. Alternatively, another object is to provide a semiconductor device using an oxide semiconductor layer having the novel structure. An oxide semiconductor layer includes an amorphous region which is mainly amorphous and a crystal region containing crystal grains of In2Ga2ZnO7 in a vicinity of a surface, in which the crystal grains are oriented so that the c-axis is almost vertical with respect to the surface. Alternatively, a semiconductor device uses such an oxide semiconductor layer.

摘要翻译： 目的在于提供一种具有新的结构的氧化物半导体层，其优选用于半导体器件。 或者，另一个目的是提供一种使用具有新颖结构的氧化物半导体层的半导体器件。 氧化物半导体层包括主要为非晶质的非晶区域和在表面附近含有In2Ga2ZnO7晶体的晶体区域，其中晶粒取向为使得c轴相对于表面几乎垂直。 或者，半导体器件使用这种氧化物半导体层。

公开(公告)号：US20120285083A1

公开(公告)日：2012-11-15

申请号：US13557469

申请日：2012-07-25

申请人： Toru Iwasaki ,  Masahiro Takahashi ,  Takashi Arai ,  Shinji Takahashi ,  Kouhei Takamoto ,  Kenji Ogawa ,  Masafumi Aoba

发明人： Toru Iwasaki ,  Masahiro Takahashi ,  Takashi Arai ,  Shinji Takahashi ,  Kouhei Takamoto ,  Kenji Ogawa ,  Masafumi Aoba

IPC分类号： C10L5/08

CPC分类号： C10L3/10 ,  B30B11/16 ,  B30B15/308 ,  C10L3/108 ,  C10L5/363

摘要： Provided is a process and an apparatus for producing at low cost gas hydrate pellets having an excellent storability. A gas hydrate generated from a raw-material gas and raw-material water is dewatered and simultaneously molded into pellets with compression-molding means under conditions suitable for generating the gas hydrate while the gas hydrate is generated from the raw-material gas and the raw-material water that exist among particles of the gas hydrate.

摘要翻译： 本发明提供一种具有优异储存性能的低成本天然气水合物颗粒的制造方法和装置。 从原料气体和原料水生成的气体水合物在适于产生气体水合物的条件下脱水并同时用压缩成型装置成型为颗粒，同时从原料气体和原料气体产生气体水合物 - 天然气水合物颗粒中存在的物质水。

公开(公告)号：US08303293B2

公开(公告)日：2012-11-06

申请号：US12733899

申请日：2007-10-03

申请人： Toru Iwasaki ,  Masahiro Takahashi ,  Takashi Arai ,  Shinji Takahashi ,  Kouhei Takamoto ,  Kenji Ogawa ,  Masafumi Aoba

发明人： Toru Iwasaki ,  Masahiro Takahashi ,  Takashi Arai ,  Shinji Takahashi ,  Kouhei Takamoto ,  Kenji Ogawa ,  Masafumi Aoba

IPC分类号： B28B5/10

CPC分类号： C10L3/10 ,  B30B11/16 ,  B30B15/308 ,  C10L3/108 ,  C10L5/363

摘要： Provided is a process and an apparatus for producing at low cost gas hydrate pellets having an excellent storability. A gas hydrate generated from a raw-material gas and raw-material water is dewatered and simultaneously molded into pellets with compression-molding means under conditions suitable for generating the gas hydrate while the gas hydrate is generated from the raw-material gas and the raw-material water that exist among particles of the gas hydrate.

摘要翻译： 本发明提供一种具有优异储存性能的低成本天然气水合物颗粒的制造方法和装置。 从原料气体和原料水生成的气体水合物在适于产生气体水合物的条件下脱水并同时用压缩成型装置成型为颗粒，同时从原料气体和原料气体产生气体水合物 - 天然气水合物颗粒中存在的物质水。

公开(公告)号：US20120251204A1

公开(公告)日：2012-10-04

申请号：US13410686

申请日：2012-03-02

申请人： Masahiro Takahashi

发明人： Masahiro Takahashi

IPC分类号： G03G15/20

CPC分类号： G03G15/2028

摘要： Driving of a driving unit is controlled so as to satisfy relationship of L>|X+Y|(|X|≦X0, |Y|≦Y0), wherein a distance between an outside end of a separation claw in a width direction when a fixing unit and the separation claw are at respective reference positions and a side end of a sheet, which is winding around a heating roller, in the width direction is L, a displacing amount of the fixing unit detected by a first detecting unit is X, a maximum displacing amount of the fixing unit is X0, a displacing amount of the separation claw detected by a second detecting unit is Y, and a maximum displacing amount of the separation claw is Y0.

摘要翻译： 控制驱动单元的驱动以满足L> | X + Y |（| X |＆nlE; X0，| Y |＆nlE; Y0）的关系，其中分离爪的外端之间的距离为宽 当定影单元和分离爪位于相应的参考位置时，在宽度方向上缠绕在加热辊上的片材的侧端是L，由第一检测单元检测到的定影单元的位移量 是X，定影单元的最大位移量为X0，由第二检测单元检测到的分离爪的位移量为Y，并且分离爪的最大位移量为Y0。

公开(公告)号：US20120230090A1

公开(公告)日：2012-09-13

申请号：US13415662

申请日：2012-03-08

申请人： Masahiro Takahashi ,  Yoshihiro Ueda

发明人： Masahiro Takahashi ,  Yoshihiro Ueda

IPC分类号： G11C11/16

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

摘要： A semiconductor memory has a first switch circuit and a second switch circuit. The semiconductor memory has a row decoder that controls a voltage of a word line. The semiconductor memory has a first writing circuit including a first signal terminal connected to one end of the first switch circuit to input and output a writing current. The semiconductor memory has a second writing circuit including a second signal terminal connected to a one end of the second switch circuit to input and output the writing current. The semiconductor memory has a select transistor including a control terminal connected to the word line. The semiconductor memory has a resistance change element that is connected in series with the select transistor between the first bit line and the second bit line and varies in resistance value depending on an applied current.

摘要翻译： 半导体存储器具有第一开关电路和第二开关电路。 半导体存储器具有控制字线电压的行解码器。 半导体存储器具有第一写入电路，该第一写入电路包括连接到第一开关电路的一端的第一信号端子，以输入和输出写入电流。 半导体存储器具有第二写入电路，该第二写入电路包括连接到第二开关电路的一端的第二信号端子，以输入和输出写入电流。 半导体存储器具有包括连接到字线的控制端的选择晶体管。 半导体存储器具有与第一位线和第二位线之间的选择晶体管串联连接的电阻变化元件，并且根据所施加的电流而改变电阻值。

公开(公告)号：US08217209B2

公开(公告)日：2012-07-10

申请号：US12085377

申请日：2006-11-29

申请人： Toru Iwasaki ,  Masahiro Takahashi

发明人： Toru Iwasaki ,  Masahiro Takahashi

IPC分类号： C07C7/20 ,  C07C9/00

CPC分类号： C07B63/02 ,  C07B61/00 ,  C07C9/04 ,  C10L3/06 ,  C10L3/108

摘要： Disclosed is a process for production of a gas hydrate, wherein the process comprises a gas hydrate production step, a cooling step, a depressurizing step and a re-cooling step. In the cooling step, the temperature (T) required for the cooling of the gas hydrate is adjusted to a temperature equal to or higher than a cooling limit temperature (t1+t2) (which is a sum of an equilibrium temperature (t1) of the gas hydrate and a temperature for correction (t2)) and equal to or lower than the freezing point (0° C.).

摘要翻译： 公开了一种生产天然气水合物的方法，其中该方法包括气体水合物生产步骤，冷却步骤，减压步骤和再冷却步骤。 在冷却步骤中，将气体水合物的冷却所需的温度（T）调节至等于或高于冷却极限温度（t1 + t2）的温度（其为平均温度（t1） 气体水合物和用于校正的温度（t2））并且等于或低于冰点（0℃）。

公开(公告)号：US20120132907A1

公开(公告)日：2012-05-31

申请号：US13303543

申请日：2011-11-23

申请人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

发明人： Shunpei Yamazaki ,  Masahiro Takahashi ,  Tetsunori Maruyama

IPC分类号： H01L29/22 ,  H01L21/34

CPC分类号： H01L29/7869 ,  C04B35/58 ,  C04B2235/3284 ,  C04B2235/3286 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02513 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0259 ,  H01L29/78681

摘要： One of objects is to provide a semiconductor film having stable characteristics. Further, one of objects is to provide a semiconductor element having stable characteristics. Further, one of objects is to provide a semiconductor device having stable characteristics. Specifically, a structure which includes a seed crystal layer (seed layer) including crystals each having a first crystal structure, one of surfaces of which is in contact with an insulating surface, and an oxide semiconductor film including crystals growing anisotropically, which is on the other surface of the seed crystal layer (seed layer) may be provided. With such a heterostructure, electric characteristics of the semiconductor film can be stabilized.

摘要翻译： 目的之一是提供具有稳定特性的半导体膜。 此外，目的之一是提供具有稳定特性的半导体元件。 此外，目的之一是提供一种具有稳定特性的半导体器件。 具体而言，包括具有第一晶体结构的晶体的晶种层（晶种层）的晶种层（其表面与绝缘面接触）的结构，以及包含各向异性生长的晶体的氧化物半导体膜， 可以提供晶种层（籽晶层）的其他表面。 利用这种异质结构，可以使半导体膜的电特性稳定。

公开(公告)号：US20120126212A1

公开(公告)日：2012-05-24

申请号：US13303637

申请日：2011-11-23

申请人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

发明人： Shunpei Yamazaki ,  Kunihiko Suzuki ,  Harue Osaka ,  Masahiro Takahashi

IPC分类号： H01L27/32 ,  H01L51/52

CPC分类号： H01L51/5012 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/5016 ,  H01L51/506 ,  H01L51/5203 ,  H01L2251/558

摘要： A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.

摘要翻译： 至少包括具有荧光发光性的发光中心材料的单分子层的发光元件和包含载体（电子或空穴） - 传输特性的主体材料和带隙大于的带隙的单分子层 在一对电极之间的发光中心材料的带隙（注意，带隙是指HOMO能级和LUMO能级之间的能量差），其中包括主体材料的单分子层和包括主体材料的单分子层 发光中心材料共享相同的界面。

公开(公告)号：US20120097650A1

公开(公告)日：2012-04-26

申请号：US13279775

申请日：2011-10-24

申请人： Masahiro Takahashi ,  Tsukasa Hagihara

发明人： Masahiro Takahashi ,  Tsukasa Hagihara

IPC分类号： B23K26/00

CPC分类号： B23K33/00 ,  B23K26/244 ,  B23K2101/18 ,  B23K2101/34 ,  B23K2103/04 ,  B23K2103/08

摘要： A laser lap welding method for parts made of galvanized steel sheet includes steps of press-forming two parts from galvanized steel sheet such that the two parts include elongated joining regions to be welded together on mutually opposed surfaces thereof and a plurality of protrusions are formed on at least any one of the joining regions of the two parts at predetermined intervals in a longitudinal direction of the joining region; retaining the two parts in a state in which the joining regions are overlapped one on the other such that a gap according to a height of the protrusions is formed between the joining regions; and irradiating a laser onto one surface of the overlapped joining regions of the two parts such that the overlapped joining regions are fused and welded by energy of the laser, and zinc gas produced with fusing is discharged through the gap.

摘要翻译： 用于镀锌钢板的部件的激光搭接焊接方法包括从镀锌钢板压制成形两部分的步骤，使得两部分包括在其相互相对的表面上被焊接在一起的细长接合区域，并且多个突起形成在 所述两个部分的接合区域中的至少任一个在所述接合区域的纵向方向上以预定的间隔; 将两部分保持在接合区域彼此重叠的状态，使得在接合区域之间形成根据突起的高度的间隙; 并且将激光照射到两个部分的重叠接合区域的一个表面上，使得重叠的接合区域被激光的能量熔合和焊接，并且通过该熔融物产生的锌气体通过间隙排出。