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    DICHALCOGENIDE THERMOELECTRIC MATERIAL
    71.
    发明申请
    DICHALCOGENIDE THERMOELECTRIC MATERIAL 有权
    DICHALCOGENIDE热电材料

    公开(公告)号：US20090250651A1

    公开(公告)日：2009-10-08

    申请号：US12418225

    申请日：2009-04-03

    Applicant: Jong-soo RHYEE ,  Sang-mock LEE

    Inventor： Jong-soo RHYEE ,  Sang-mock LEE

    IPC: H01L35/16

    CPC classification number: H01L35/16 ,  C01B17/20 ,  C01B19/002 ,  C01B19/007 ,  C01P2002/20 ,  C01P2002/52 ,  C01P2002/77 ,  C01P2006/32 ,  C01P2006/40

    Abstract: A dichalcogenide thermoelectric material having a very low thermal conductivity in comparison with a conventional metal or semiconductor is described. The dichalcogenide thermoelectric material has a structure of Formula 1 below: RX2-aYa  Formula 1 wherein R is a rare earth or transition metal magnetic element, X and Y are each independently an element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga, In, and a combination thereof, and 0≦a

    Abstract translation: 描述了与常规金属或半导体相比具有非常低热导率的二硫属元素化物质热电材料。 二硫属元素化物热电材料具有以下结构：RX2-aYa式1其中R是稀土或过渡金属磁性元素，X和Y各自独立地选自S，Se，Te，P ，As，Sb，Bi，C，Si，Ge，Sn，B，Al，Ga，In及其组合，0 <= a <2。

    POLYMER COMPOSITE
    73.
    发明申请
    POLYMER COMPOSITE 审中-公开
    聚合物复合材料

    公开(公告)号：US20090230363A1

    公开(公告)日：2009-09-17

    申请号：US12397987

    申请日：2009-03-04

    Applicant: Eun Sung LEE ,  Sang Mock LEE ,  Young Hun BYUN

    Inventor： Eun Sung LEE ,  Sang Mock LEE ,  Young Hun BYUN

    IPC: H01B1/02 ,  H01B1/08

    CPC classification number: H05K1/095 ,  B82Y10/00 ,  H01G4/206 ,  H05K1/097 ,  H05K1/162

    Abstract: A polymer composite having a high dielectric constant is disclosed herein. The polymer composite includes a conductive material impregnated with oxidizable metal nanoparticles or metal oxide nanoparticles to decrease dielectric loss, and an anion surfactant containing an acidic functional group to form a passivation layer that surrounds the conductive material, resulting in increased dielectric constant.

    Abstract translation: 本文公开了具有高介电常数的聚合物复合材料。 聚合物复合材料包括浸渍有可氧化金属纳米颗粒或金属氧化物纳米颗粒以降低介电损耗的导电材料，以及含有酸性官能团以形成包围导电材料的钝化层的阴离子表面活性剂，导致介电常数增加。

    POLYMERIC SURFACTANT FOR HIGH DIELECTRIC POLYMER COMPOSITES, METHOD OF PREPARING THE SAME AND HIGH DIELECTRIC POLYMER COMPOSITE COMPRISING THE SAME
    74.
    发明申请
    POLYMERIC SURFACTANT FOR HIGH DIELECTRIC POLYMER COMPOSITES, METHOD OF PREPARING THE SAME AND HIGH DIELECTRIC POLYMER COMPOSITE COMPRISING THE SAME 有权
    用于高介电聚合物复合材料的聚合表面活性剂，其制备方法和包含该聚合物复合材料的高介电聚合物复合材料

    公开(公告)号：US20080186653A1

    公开(公告)日：2008-08-07

    申请号：US11961011

    申请日：2007-12-20

    Applicant: Eun Sung LEE ,  Sang Mock LEE ,  Young Hun BYUN ,  Jin Young BAE

    Inventor： Eun Sung LEE ,  Sang Mock LEE ,  Young Hun BYUN ,  Jin Young BAE

    IPC: H01G4/14 ,  C08F110/06 ,  C08F110/10 ,  C08F12/08 ,  C08F26/06

    CPC classification number: H01G4/206

    Abstract: Disclosed is a polymeric surfactant for high dielectric polymer composites, a method of preparing the same, and a high dielectric polymer composite including the same. The polymeric surfactant for high dielectric polymer composites, which includes a head portion having high affinity for a conductive material and a tail portion having high affinity for a polymer resin, forms a passivation layer surrounding the conductive material in the high dielectric polymer composite including the polymeric surfactant, thus ensuring and controlling a high dielectric constant.

    Abstract translation: 公开了一种用于高介电聚合物复合材料的聚合物表面活性剂，其制备方法和包含该聚合物的高介电聚合物复合材料。 用于高介电聚合物复合材料的聚合物表面活性剂包括对导电材料具有高亲和性的头部和对聚合物树脂具有高亲和力的尾部，在包含聚合物的高介电聚合物复合材料中形成围绕导电材料的钝化层 表面活性剂，从而确保和控制高介电常数。

    Method of fabricating phase change RAM including a fullerene layer
    75.
    发明申请
    Method of fabricating phase change RAM including a fullerene layer 有权
    制造包含富勒烯层的相变RAM的方法

    公开(公告)号：US20070152754A1

    公开(公告)日：2007-07-05

    申请号：US11604824

    申请日：2006-11-28

    Applicant: Yoon-ho Khang ,  Sang-Mock Lee ,  Jin-seo Noh ,  Woong-Chul Shin

    Inventor： Yoon-ho Khang ,  Sang-Mock Lee ,  Jin-seo Noh ,  Woong-Chul Shin

    IPC: H03G3/10

    CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C11/5678 ,  G11C13/0004 ,  G11C2213/35 ,  G11C2213/79 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1675 ,  Y10S977/734

    Abstract: A method of fabricating a phase change RAM (PRAM) having a fullerene layer is provided. The method of fabricating the PRAM may include forming a bottom electrode, forming an interlayer dielectric film covering the bottom electrode, and forming a bottom electrode contact hole exposing a portion of the bottom electrode in the interlayer dielectric film, forming a bottom electrode contact plug by filling the bottom electrode contact hole with a plug material, forming a fullerene layer on a region including at least an upper surface of the bottom electrode contact plug and sequentially stacking a phase change layer and an upper electrode on the fullerene layer. The method may further include forming a switching device on a substrate and a bottom electrode connected to the switching device, forming an interlayer dielectric film covering the bottom electrode and forming a bottom electrode contact hole exposing a portion of the bottom electrode in the interlayer dielectric film.

    Abstract translation: 提供了制造具有富勒烯层的相变RAM（PRAM）的方法。 制造PRAM的方法可以包括形成底部电极，形成覆盖底部电极的层间电介质膜，以及形成暴露层间电介质膜中底部电极的一部分的底部电极接触孔，形成底部电极接触插塞 用塞子材料填充底部电极接触孔，在包括底部电极接触塞的至少上表面的区域上形成富勒烯层，并且在富勒烯层上依次层叠相变层和上部电极。 该方法还可以包括在基板上形成开关器件和连接到开关器件的底部电极，形成覆盖底部电极的层间电介质膜，并形成露出层间绝缘膜中底部电极的一部分的底部电极接触孔 。

    Phase change random access memory and method of operating the same
    76.
    发明申请
    Phase change random access memory and method of operating the same 有权
    相变随机存取存储器及其操作方法

    公开(公告)号：US20070051935A1

    公开(公告)日：2007-03-08

    申请号：US11359428

    申请日：2006-02-23

    Applicant: Sang-mock Lee ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

    Inventor： Sang-mock Lee ,  Yoon-ho Khang ,  Jin-seo Noh ,  Dong-seok Suh

    IPC: H01L47/00 ,  H01L29/00

    CPC classification number: G11C13/025 ,  B82Y10/00 ,  G11C13/0004 ,  G11C2213/52 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148

    Abstract: A phase change random access memory (PRAM), and a method of operating the PRAM are provided. In the PRAM comprising a switching element and a storage node connected to the switching element, the storage node comprises a first electrode, a second electrode, a phase change layer between the first electrode and a second electrode, and a heat efficiency improving element formed between the first electrode and the phase change layer. The heat efficiency improving element may be one of a carbon nanotube (CNT) layer, a nanoparticle layer, and a nanodot layer, and the nanoparticle layer may be a fullerene layer.

    Abstract translation: 提供相变随机存取存储器（PRAM）以及操作PRAM的方法。 在包括开关元件和连接到开关元件的存储节点的PRAM中，存储节点包括第一电极，第二电极，在第一电极和第二电极之间的相变层，以及在第一电极和第二电极之间形成的热效率改善元件 第一电极和相变层。 热效率改善元件可以是碳纳米管（CNT）层，纳米颗粒层和纳米点层之一，并且纳米颗粒层可以是富勒烯层。

    Organic electrolytic solution and lithium-sulfur battery comprising the same
    79.
    发明申请
    Organic electrolytic solution and lithium-sulfur battery comprising the same 有权
    有机电解液和含有它的锂硫电池

    公开(公告)号：US20050053842A1

    公开(公告)日：2005-03-10

    申请号：US10927188

    申请日：2004-08-27

    Applicant: Young-Gyoon Ryu ,  Myung-Dong Cho ,  Sang-Mock Lee ,  Trofimov A.

    Inventor： Young-Gyoon Ryu ,  Myung-Dong Cho ,  Sang-Mock Lee ,  Trofimov A.

    IPC: H01M10/05 ,  H01M4/02 ,  H01M4/36 ,  H01M4/38 ,  H01M4/40 ,  H01M4/58 ,  H01M4/60 ,  H01M4/62 ,  H01M10/052 ,  H01M10/0567 ,  H01M10/40

    CPC classification number: H01M10/0567 ,  H01M4/382 ,  H01M4/405 ,  H01M4/58 ,  H01M4/5815 ,  H01M4/60 ,  H01M4/602 ,  H01M10/052 ,  H01M2300/0025

    Abstract: An organic electrolytic solution for a lithium-sulfur battery that can improve discharge capacity and cycle life of the battery, and a lithium-sulfur battery using the organic electrolytic solution are provided. The electrolytic solution includes a lithium salt, an organic solvent, and further a phosphine sulfide-based compound represented by formula (I) below: wherein R1, R2 and R3 are the same or different from each other, and each represents one selected from the group consisting of a substituted or unsubstituted C1-C30 alkyl group, a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C1-C30 alkoxy group and a substituted or unsubstituted C8-C30 aralkenyl group. The electrolytic solution including the phosphine sulfide-based compound represented by Formula (I) can suppress production of lithium sulfides so that a reduction in battery capacity can be prevented.

    Abstract translation: 提供一种能够提高电池的放电容量和循环寿命的锂硫电池的有机电解液以及使用有机电解液的锂硫电池。 电解液包括锂盐，有机溶剂，以及下述式（I）表示的硫化
    膦系化合物：其中R1，R2和R3彼此相同或不同，并且各自表示选自 取代或未取代的C 1 -C 30烷基，取代或未取代的C 6 -C 30芳基，取代或未取代的C 1 -C 30烷氧基和取代或未取代的C 8 -C 30芳烯基。 包含由式（I）表示的硫化膦类化合物的电解液可以抑制硫化锂的生成，从而可以防止电池容量的降低。

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