公开(公告)号：US06537638B2

公开(公告)日：2003-03-25

申请号：US09681056

申请日：2000-12-13

申请人： Hoa Do ,  Yoshihiro Ikeda ,  Yoshiaki Sonobe ,  Kentaro Takano

发明人： Hoa Do ,  Yoshihiro Ikeda ,  Yoshiaki Sonobe ,  Kentaro Takano

IPC分类号： G11B566

CPC分类号： G11B5/7325 ,  G11B5/65 ,  Y10S428/90

摘要： A perpendicular magnetic recording disk has an underlayer structure that causes the magnetic layer to have perpendicular magnetic anisotropy and high signal-to-noise ratio (SNR). The underlayer structure comprises a B2 type body-centered-cubic (BCC) material, such as the binary alloys NiAl, RuAl and RuTi, as an underlayer, and a Ti or TiCr alloy sublayer formed directly on the underlayer. The magnetic layer, such as a CoCrPt alloy, is deposited directly on the sublayer. The magnetic layer has perpendicular magnetic anisotropy due to the sublayer yet excellent SNR because of the smaller grain size of the sublayer material formed directly on the B2 type underlayer.

摘要翻译： 垂直磁记录盘具有底层结构，其使磁层具有垂直的磁各向异性和高的信噪比（SNR）。 底层结构包括B2型体心立方（BCC）材料，例如作为底层的二元合金NiAl，RuAl和RuTi，以及直接形成在底层上的Ti或TiCr合金子层。 磁性层，如CoCrPt合金，直接沉积在子层上。 由于子层材料直接在B2型底层上形成的较小的晶粒尺寸，所以磁层由于子层而具有良好的SNR，具有垂直的磁各向异性。

公开(公告)号：US06417599B2

公开(公告)日：2002-07-09

申请号：US09841793

申请日：2001-04-25

申请人： Yoshihiro Ikeda

发明人： Yoshihiro Ikeda

IPC分类号： H01L4108

CPC分类号： H03H9/177 ,  H03H3/02 ,  H03H9/1014

摘要： A piezoelectric resonator utilizes a thickness shear vibration mode, which allows for simplification of the manufacturing process, effectively suppresses ripples in the width mode, has superior frequency characteristics and is inexpensive. This piezoelectric resonator includes a pair of vibration electrodes provided on portions of first and second main surfaces, respectively, of a piezoelectric substrate, and a damping member arranged so as to cover a vibrating portion only on one main surface of the piezoelectric resonator and a pair of side surfaces connecting the first and second main surfaces.

摘要翻译： 压电谐振器利用厚度剪切振动模式，其允许简化制造工艺，有效地抑制宽度模式中的波纹，具有优异的频率特性并且便宜。 该压电谐振器包括分别设置在压电基板的第一和第二主表面的一部分上的一对振动电极以及仅在压电谐振器的一个主表面上覆盖振动部的阻尼部件， 连接第一和第二主表面的侧表面。

公开(公告)号：US06169324A

公开(公告)日：2001-01-02

申请号：US09413754

申请日：1999-10-06

申请人： Jun Sugiura ,  Osamu Tsuchiya ,  Makoto Ogasawara ,  Fumio Ootsuka ,  Kazuyoshi Torii ,  Isamu Asano ,  Nobuo Owada ,  Mitsuaki Horiuchi ,  Tsuyoshi Tamaru ,  Hideo Aoki ,  Nobuhiro Otsuka ,  Seiichirou Shirai ,  Masakazu Sagawa ,  Yoshihiro Ikeda ,  Masatoshi Tsuneoka ,  Toru Kaga ,  Tomotsugu Shimmyo ,  Hidetsugu Ogishi ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Wakahara ,  Hiroyuki Akimori ,  Sinichi Suzuki ,  Keisuke Funatsu ,  Yoshinao Kawasaki ,  Tunehiko Tubone ,  Takayoshi Kogano ,  Ken Tsugane

发明人： Jun Sugiura ,  Osamu Tsuchiya ,  Makoto Ogasawara ,  Fumio Ootsuka ,  Kazuyoshi Torii ,  Isamu Asano ,  Nobuo Owada ,  Mitsuaki Horiuchi ,  Tsuyoshi Tamaru ,  Hideo Aoki ,  Nobuhiro Otsuka ,  Seiichirou Shirai ,  Masakazu Sagawa ,  Yoshihiro Ikeda ,  Masatoshi Tsuneoka ,  Toru Kaga ,  Tomotsugu Shimmyo ,  Hidetsugu Ogishi ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Wakahara ,  Hiroyuki Akimori ,  Sinichi Suzuki ,  Keisuke Funatsu ,  Yoshinao Kawasaki ,  Tunehiko Tubone ,  Takayoshi Kogano ,  Ken Tsugane

IPC分类号： H01L2144

CPC分类号： H01L27/10852 ,  G03F7/70333 ,  G03F9/70 ,  H01L21/28512 ,  H01L21/76 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/823807 ,  H01L23/291 ,  H01L23/4951 ,  H01L23/5258 ,  H01L23/532 ,  H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0922 ,  H01L27/0928 ,  H01L27/10808 ,  H01L28/40 ,  H01L2223/54473 ,  H01L2224/05554 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  Y10S257/90 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

摘要： Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel stopper regions over the principal surface portions below the element separating insulating film of the substrate by introducing an impurity into all the surface portions including the active regions and the inactive regions of the substrate after the first mask and the second mask have been removed.

摘要翻译： 这里公开了一种半导体集成电路器件制造工艺，用于在由分离绝缘膜和沟道阻挡区域形成的无源区域围绕的衬底的这些有源区的主表面上形成MISFET，其包括：形成步骤 通过不可氧化掩模的第一掩模和顺序地在衬底的有源区的主表面上的蚀刻掩模; 分别通过比第一掩模的不可氧化掩模和蚀刻掩模更薄的不可氧化掩模在第一掩模的侧壁上自对准形成第二掩模的步骤; 通过使用第一掩模和第二掩模蚀刻衬底的非活性区的主表面的步骤; 通过使用第一掩模和第二掩模的氧化在衬底的无活性区域的主表面上形成元件分离绝缘膜的步骤; 以及通过在第一掩模之后将杂质引入到包括基板的有源区域和非活性区域的全部表面部分中而在基板的元件分离绝缘膜下方的主表面部分上形成沟道阻挡区域的步骤， 面具已被删除。

公开(公告)号：US5780882A

公开(公告)日：1998-07-14

申请号：US456788

申请日：1995-06-01

申请人： Jun Sugiura ,  Osamu Tsuchiya ,  Makoto Ogasawara ,  Fumio Ootsuka ,  Kazuyoshi Torii ,  Isamu Asano ,  Nobuo Owada ,  Mitsuaki Horiuchi ,  Tsuyoshi Tamaru ,  Hideo Aoki ,  Nobuhiro Otsuka ,  Seiichirou Shirai ,  Masakazu Sagawa ,  Yoshihiro Ikeda ,  Masatoshi Tsuneoka ,  Toru Kaga ,  Tomotsugu Shimmyo ,  Hidetsugu Ogishi ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Wakahara ,  Hiroyuki Akimori ,  Sinichi Suzuki ,  Keisuke Funatsu ,  Yoshinao Kawasaki ,  Tunehiko Tubone ,  Takayoshi Kogano ,  Ken Tsugane

发明人： Jun Sugiura ,  Osamu Tsuchiya ,  Makoto Ogasawara ,  Fumio Ootsuka ,  Kazuyoshi Torii ,  Isamu Asano ,  Nobuo Owada ,  Mitsuaki Horiuchi ,  Tsuyoshi Tamaru ,  Hideo Aoki ,  Nobuhiro Otsuka ,  Seiichirou Shirai ,  Masakazu Sagawa ,  Yoshihiro Ikeda ,  Masatoshi Tsuneoka ,  Toru Kaga ,  Tomotsugu Shimmyo ,  Hidetsugu Ogishi ,  Osamu Kasahara ,  Hiromichi Enami ,  Atsushi Wakahara ,  Hiroyuki Akimori ,  Sinichi Suzuki ,  Keisuke Funatsu ,  Yoshinao Kawasaki ,  Tunehiko Tubone ,  Takayoshi Kogano ,  Ken Tsugane

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L21/02 ,  H01L21/285 ,  H01L21/336 ,  H01L21/76 ,  H01L21/768 ,  H01L21/8238 ,  H01L21/8242 ,  H01L23/29 ,  H01L23/495 ,  H01L23/525 ,  H01L23/532 ,  H01L23/544 ,  H01L27/092 ,  H01L27/10 ,  H01L27/108 ,  H01L29/78 ,  H01L27/02

CPC分类号： H01L27/10852 ,  G03F7/70333 ,  G03F9/70 ,  H01L21/28512 ,  H01L21/76 ,  H01L21/76801 ,  H01L21/76804 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76877 ,  H01L21/823807 ,  H01L23/291 ,  H01L23/4951 ,  H01L23/5258 ,  H01L23/532 ,  H01L23/544 ,  H01L27/0922 ,  H01L28/40 ,  H01L2223/54473 ,  H01L2224/05554 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/73215 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0928 ,  H01L27/10808 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/12036 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  Y10S257/90

摘要： Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel stopper regions over the principal surface portions below the element separating insulating film of the substrate by introducing an impurity into all the surface portions including the active regions and the inactive regions of the substrate after the first mask and the second mask have been removed.

公开(公告)号：US5098669A

公开(公告)日：1992-03-24

申请号：US549050

申请日：1990-07-06

申请人： Norio Kawanami ,  Yoshihiro Ikeda ,  Mitsuo Kamiwano

发明人： Norio Kawanami ,  Yoshihiro Ikeda ,  Mitsuo Kamiwano

IPC分类号： B01F7/16 ,  B01F7/00 ,  B01F7/18 ,  B01F15/00 ,  B01J10/00 ,  B01J19/00 ,  B01J19/18

CPC分类号： B01J19/18 ,  B01F7/183 ,  B01J19/006 ,  B01J19/0066 ,  B01F15/00883 ,  B01J2219/00777 ,  B01J2219/00779 ,  B01J2219/185

摘要： A stirring reactor for a viscous material. The reactor comprises a stirring vessel; a revolvable shaft provided in the vessel; a surface layer stirring vane provided on the revolvable shaft in the vicinity of interface of the gas and the liquid to be stirred; a stirring vane having at least a pair of radially directed multiple portion blades which extend radially towards the inner wall, a first of which blade portions is fastened on the revolving shaft below the upper layer stirring vane and the other of which blade portions extends outwardly radially from said first portion to terminate close to the inner wall of the vessel; and baffle plates provided on the inner side wall at positions substantially parallel to the surface layer stirring vane, and at a height between the heights of any stirring vanes having multiple blades.

公开(公告)号：US09561011B2

公开(公告)日：2017-02-07

申请号：US12560047

申请日：2009-09-15

申请人： Kazumasa Arakita ,  Yoshihiro Ikeda

发明人： Kazumasa Arakita ,  Yoshihiro Ikeda

IPC分类号： A61B5/055 ,  A61B5/026 ,  A61B6/00

CPC分类号： A61B6/504 ,  A61B6/507

摘要： An X-ray CT apparatus includes a perfusion data acquisition unit, a perfusion parameter calculating unit and a perfusion parameter display unit. The perfusion data acquisition unit generate perfusion data by exposing an X-ray to the object with injecting contrast medium. The perfusion parameter calculating unit calculates perfusion parameters corresponding to ROIs based on time variations in density of the contrast medium for the ROIs. The perfusion parameter display unit divides a period to be a calculation target of the time variations into plural time ranges and sequentially displays images each including the ROIs. The images correspond to the time ranges and mutually different time phases respectively and are masked so as to make only ROIs at which the perfusion parameters show values displayed.

摘要翻译： X射线CT装置包括灌注数据获取单元，灌注参数计算单元和灌注参数显示单元。 灌注数据采集单元通过用注射造影剂将X射线暴露于对象来产生灌注数据。 灌注参数计算单元基于ROI的造影剂的密度的时间变化来计算与ROI相对应的灌注参数。 灌注参数显示单元将时间变化的计算对象的时间间隔分割为多个时间范围，并依次显示各自包含ROI的图像。 这些图像分别对应于时间范围和相互不同的时间阶段，并被掩蔽，以便仅使灌注参数显示值显示的ROI。

公开(公告)号：US08983962B2

公开(公告)日：2015-03-17

申请号：US11815621

申请日：2006-02-08

申请人： Satoshi Nakazawa ,  Kenji Satoh ,  Yoshihiro Ikeda

发明人： Satoshi Nakazawa ,  Takahiro Ikeda ,  Kenji Satoh

IPC分类号： G06F7/00 ,  G06F17/30

CPC分类号： G06F17/30654 ,  Y10S707/917 ,  Y10S707/944

摘要： The question and answer data editing device for editing dialog content to generate question and answer data, includes a detecting unit that detects a part of the dialog content similar to existing question and answer data stored, and a extracting unit that extracts a context in which the dialog content is made from dialog content in the proximity of the similar part detected and registers the context extracted as new question and answer data or as index information of the question and answer data.

摘要翻译： 用于编辑对话内容以生成问答数据的问答数据编辑装置包括：检测与存储的现有问答数据类似的对话内容的一部分的检测单元，以及提取单元， 对话内容由检测到的相似部分附近的对话内容进行，并将提取的上下文作为新的问答数据或作为问答数据的索引信息进行注册。

公开(公告)号：US08466507B2

公开(公告)日：2013-06-18

申请号：US13195068

申请日：2011-08-01

申请人： Tatsuya Fukumura ,  Yoshihiro Ikeda ,  Shunichi Narumi ,  Izumi Takesue

发明人： Tatsuya Fukumura ,  Yoshihiro Ikeda ,  Shunichi Narumi ,  Izumi Takesue

IPC分类号： H01L29/788

CPC分类号： H01L27/11517 ,  G11C16/0433 ,  H01L21/32053 ,  H01L21/32055 ,  H01L21/768 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42376

摘要： A semiconductor device having a nonvolatile memory is reduced in size. In an AND type flash memory having a plurality of nonvolatile memory cells having a plurality of first electrodes, a plurality of word lines crossing therewith, and a plurality of floating gate electrodes disposed at positions which respectively lie between the plurality of adjacent first electrodes and overlap the plurality of word lines, as seen in plan view, the plurality of floating gate electrodes are formed in a convex shape, as seen in cross section, so as to be higher than the first electrodes. As a result, even when nonvolatile memory cells are reduced in size, it is possible to process the floating gate electrodes with ease. In addition, it is possible to improve the coupling ratio between floating gate electrodes and control gate electrodes of the word lines without increasing the area occupied by the nonvolatile memory cells.

摘要翻译： 具有非易失性存储器的半导体器件的尺寸减小。 在具有多个非易失性存储单元的AND型闪速存储器中，具有多个第一电极，与之交叉的多个字线，以及设置在分别位于多个相邻的第一电极之间且重叠的位置的多个浮置栅电极 如平面图所示，多个字线如横截面那样形成为凸形，从而高于第一电极。 结果，即使非易失性存储单元的尺寸减小，也可以容易地处理浮置栅电极。 此外，可以提高字线的浮栅电极和控制栅电极之间的耦合比，而不增加非易失存储单元所占的面积。

公开(公告)号：US08393630B2

公开(公告)日：2013-03-12

申请号：US13408390

申请日：2012-02-29

申请人： Yoshihiro Ikeda

发明人： Yoshihiro Ikeda

IPC分类号： B62J25/00

CPC分类号： B62J25/00 ,  B60T7/06 ,  B60T11/16 ,  B60T11/18 ,  B62K23/08 ,  G05G1/30

摘要： A straddle-type vehicle including a vehicle body frame having a vehicle body, an engine supported by the vehicle body frame, a footrest disposed to a front lower portion of the engine, a footrest bracket for attaching the footrest to the vehicle body frame, and a braking unit. The braking unit includes a brake pedal arranged in the vicinity of the footrest and turned by a pedaling force of the rider, a master cylinder operated by the brake pedal, and a reservoir that supplies a hydraulic fluid to the master cylinder. The master cylinder is disposed behind the footrest bracket such that a cylinder axial line thereof is substantially horizontal and at least a part of a front half thereof overlaps with the footrest bracket as viewed from both a side of a vehicle and a bottom side thereof.

摘要翻译： 一种跨乘式车辆，包括具有车身的车身框架，由车体框架支撑的发动机，设置在发动机的前下部的脚踏板，将脚踏板安装在车体框架上的脚踏支架，以及 制动单元。 制动单元包括设置在脚踏板附近并由骑车人的踏力转动的制动踏板，由制动踏板操作的主缸以及向主缸供应液压流体的储存器。 主缸设置在脚踏支架的后方，使得其气缸轴线基本上是水平的，并且当从车辆侧面及其底侧观察时，其前半部分的至少一部分与脚踏支架重叠。

公开(公告)号：US20120307961A1

公开(公告)日：2012-12-06

申请号：US13585128

申请日：2012-08-14

申请人： Yoshihiro IKEDA

发明人： Yoshihiro IKEDA

IPC分类号： G06T17/00 ,  A61B6/03

CPC分类号： A61B6/481 ,  A61B6/06 ,  A61B6/504 ,  A61B6/507 ,  A61B6/5258

摘要： An image processing apparatus has a map data generating unit, a correction processing unit and a display processing unit. The map data generating unit generates 3D map data including voxel values based on blood signal values of a myocardium area of a heart included in volume data of the heart. The correction processing unit corrects a plurality of voxel values on each a plurality of straight lines radially extending from an interior side of the heart so as to be equivalent to a voxel value at an inner wall side of the myocardium area on each of the straight lines to generate 3D corrected map data on the basis of the 3D map data. The display processing unit generates image data on the basis of the 3D corrected map data to display on a display device.

摘要翻译： 图像处理装置具有地图数据生成单元，校正处理单元和显示处理单元。 地图数据生成单元基于心脏的体积数据中包含的心脏的心肌区域的血液信号值生成包括体素值的3D地图数据。 校正处理单元在从心脏的内侧沿径向延伸的多个直线上校正多个体素值，以便等同于在每条直线上的心肌区域的内壁侧的体素值 以基于3D地图数据生成3D校正的地图数据。 显示处理单元基于3D校正的地图数据生成图像数据，以在显示装置上显示。