公开(公告)号：US07628899B2

公开(公告)日：2009-12-08

申请号：US11301849

申请日：2005-12-12

申请人： John M. White ,  Hien-Minh H. Le ,  Akihiro Hosokawa

发明人： John M. White ,  Hien-Minh H. Le ,  Akihiro Hosokawa

IPC分类号： C25B9/00

CPC分类号： H01J37/3408 ,  H01J37/3455

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in a PVD chamber that has a magnetron assembly whose shape can be distorted to adjust the magnetic field strength in the processing region of the deposition chamber to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more magnetron regions and magnetron actuators that are used to increase and more evenly distribute the magnetic field strength throughout the processing region of the processing chamber during processing.

摘要翻译： 本发明总体上提供了一种用于处理PVD室中的基板的表面的装置和方法，该PVD腔具有可以变形形状的磁控管组件，以调节沉积室的处理区域中的磁场强度，以提高沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个磁控管区域和磁控管致动器，其用于在处理期间增加并且更均匀地分布整个处理室的处理区域的磁场强度。

公开(公告)号：US20090051216A1

公开(公告)日：2009-02-26

申请号：US12097629

申请日：2006-12-15

申请人： Yoshinori Maeda ,  Yasuhiro Oshiumi ,  Michitaka Tsuchida ,  Kazuya Okumura ,  Kensuke Yoshizue ,  Akihiro Hosokawa ,  Koji Sugiyama

发明人： Yoshinori Maeda ,  Yasuhiro Oshiumi ,  Michitaka Tsuchida ,  Kazuya Okumura ,  Kensuke Yoshizue ,  Akihiro Hosokawa ,  Koji Sugiyama

IPC分类号： B60T8/62

CPC分类号： B60T8/1755 ,  B60L15/2036 ,  B60T2270/613 ,  B60W10/08 ,  B60W10/18 ,  B60W10/184 ,  B60W30/02 ,  B60W30/18127 ,  B60W40/11 ,  B60W40/112 ,  B60W40/114 ,  B60W2520/14 ,  B60W2520/30 ,  B60W2710/083 ,  B60W2720/30 ,  Y02T10/645 ,  Y02T10/72 ,  Y02T10/7275 ,  Y02T90/16

摘要： An object of the present invention is to achieve a braking-driving force and a yaw moment required for a vehicle to a possible extent within a range of braking-driving forces which the front and rear wheels can generate, when a target braking-driving force and a target yaw moment of the vehicle cannot be achieved by means of braking-driving forces that can be generated by the individual wheels. A target braking-driving force Fvn and a target yaw moment Mvn of the entire vehicle are calculated, and when the target braking-driving force Fvn and the target yaw moment Mvn cannot be achieved by means of the braking-driving forces of the front wheels, a target braking-driving force Fvft and a target yaw moment Mvft of the front wheels are adjusted such that the magnitudes of the braking-driving force and yaw moment of the vehicle produced by means of the braking-driving forces of the front wheels become the maximum at a ratio between Fvn and Mvn. A target braking-driving force Fvrt and a target yaw moment Mvrt of the rear wheels are calculated on the basis of Fvn, Mvn, Fvft, and Mvft, and similar adjustment is performed for them when necessarily.

摘要翻译： 本发明的目的在于，当目标制动驱动力（目标制动驱动力）为目标时，可以在前轮和后轮能够产生的制动驱动力的范围内实现车辆所需的制动驱动力和横摆力矩 并且不能通过可由各个车轮产生的制动驱动力来实现车辆的目标横摆力矩。 计算整个车辆的目标制动驱动力Fvn和目标横摆力矩Mvn，并且当目标制动驱动力Fvn和目标横摆力矩Mvn不能通过前轮的制动驱动力 调整前轮的目标制动驱动力Fvft和目标横摆力矩Mvft，使得通过前轮的制动驱动力产生的车辆的制动驱动力和横摆力矩的大小成为 Fvn和Mvn之间的最大值。 根据Fvn，Mvn，Fvft，和Mvft计算后轮的目标制动驱动力Fvrt和目标横摆力矩Mvrt，当必要时对它们进行类似的调整。

公开(公告)号：US20080237188A1

公开(公告)日：2008-10-02

申请号：US12030494

申请日：2008-02-13

申请人： Itsuki Kajino ,  Akihiro Hosokawa ,  Kozo Terashima

发明人： Itsuki Kajino ,  Akihiro Hosokawa ,  Kozo Terashima

IPC分类号： C23F1/00 ,  C23F1/08 ,  B08B13/00 ,  B08B3/08

CPC分类号： B08B3/04 ,  H01L21/67057 ,  H01L21/67086

摘要： Mutually different plural kinds of processing liquid are sequentially supplied to a gap space in which a substrate is arranged to perform a wet processing to the substrate with respect to each processing liquid. Further, the processing liquid used in the wet processing is sequentially released from the communicating portion upon execution of each wet processing. The liquid retrieval tanks are selectively positioned at a retrieval position corresponding to the kind of processing liquid released from the communicating portion by relatively moving the processing unit and the liquid retrieval unit. The liquid retrieval unit is separated from the processing unit and is arranged below the processing unit. The processing liquid is released from the communicating portion of the processing unit to below the gap space downwards vertically.

摘要翻译： 相互不同的多种处理液依次供给到其中布置有基板以对每个处理液体进行对基板的湿加工的间隙空间。 此外，在湿式处理中使用的处理液在执行每个湿法处理时从通信部分顺序地释放。 液体回收槽通过相对移动处理单元和液体回收单元而被选择性地定位在与从连通部分释放的处理液的种类相对应的回收位置。 液体检索单元与处理单元分离，并且布置在处理单元的下方。 处理液从处理单元的连通部分向下垂直向下排列到间隙空间的下方。

公开(公告)号：US20070235320A1

公开(公告)日：2007-10-11

申请号：US11399233

申请日：2006-04-06

申请人： John White ,  Yan Ye ,  Akihiro Hosokawa

发明人： John White ,  Yan Ye ,  Akihiro Hosokawa

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/0063 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/34

摘要： A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability.

摘要翻译： 提供了一种用于处理大面积基板的溅射装置。 通过在整个靶表面上引入气体，可以在衬底上形成均匀的组成膜。 当气体仅在周边引入时，气体分布不均匀。 通过在处理区域内设置气体导入管，反应气体将均匀地分布到整个靶材上。 此外，为气体管提供多个内管提供了快速有效的气体分散能力。

公开(公告)号：US20070086881A1

公开(公告)日：2007-04-19

申请号：US11613556

申请日：2006-12-20

申请人： Shinichi Kurita ,  Wendell Blonigan ,  Akihiro Hosokawa

发明人： Shinichi Kurita ,  Wendell Blonigan ,  Akihiro Hosokawa

IPC分类号： H01L21/677 ,  H01L21/306 ,  C23C16/00 ,  B65H1/00

CPC分类号： H01L21/68742 ,  B65G49/068 ,  B65G2249/02 ,  B65G2249/04 ,  C23C14/566 ,  C23C14/568 ,  C23C16/54 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67201 ,  H01L21/67739 ,  H01L21/67745 ,  H01L21/67748

摘要： One embodiment relates to a loadlock having a first support structure therein to support one unprocessed substrate and a second support structure therein to support one processed substrate. The first support structure is located above the second support structure. The loadlock includes an elevator to control the vertical position of the support structures. The loadlock also includes a first aperture to permit insertion of an unprocessed substrate into the loadlock and removal of a processed substrate from the loadlock, as well as a second aperture to permit removal of an unprocessed substrate from the loadlock and insertion of a processed substrate into the loadlock. A cooling plate is also located in the loadlock. The cooling plate includes a surface adapted to support a processed substrate thereon. A heating device may be located in the loadlock above the first support structure.

摘要翻译： 一个实施例涉及一种其中具有第一支撑结构的负载锁，用于支撑一个未处理的基板和其中的第二支撑结构以支撑一个处理的基板。 第一支撑结构位于第二支撑结构的上方。 负载锁包括用于控制支撑结构的垂直位置的电梯。 负载锁还包括第一孔，以允许将未处理的衬底插入到装载锁中并从加载锁中移除经处理的衬底，以及第二孔，以允许将未处理的衬底从负载锁上移除并将经处理的衬底插入 负载锁。 一个冷却板也位于负载锁中。 冷却板包括适于在其上支撑经处理的基板的表面。 加热装置可以位于第一支撑结构上方的装载锁中。

公开(公告)号：US20070051616A1

公开(公告)日：2007-03-08

申请号：US11282798

申请日：2005-11-17

申请人： Hienminh Le ,  Akihiro Hosokawa

发明人： Hienminh Le ,  Akihiro Hosokawa

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： H01J37/3408 ,  H01J37/3455

摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has a magnetron assembly that has separately positionable magnetron sections to improve the deposition uniformity. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more magnetron sections and magnetron actuators that are used to increase and more evenly distribute the magnetic field strength throughout the processing region of the processing chamber during processing.

摘要翻译： 本发明总体上提供了一种用于处理物理气相沉积（PVD）室中的衬底表面的装置和方法，其具有磁控管组件，磁控管组件具有分开的可定位的磁控管部分以改善沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个磁控管部分和磁控管致动器，其用于在处理期间增加并更均匀地分布整个处理室的处理区域的磁场强度。

公开(公告)号：US20070012557A1

公开(公告)日：2007-01-18

申请号：US11181043

申请日：2005-07-13

申请人： Akihiro Hosokawa ,  Hien H. Le

发明人： Akihiro Hosokawa ,  Hien H. Le

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/3447

摘要： Embodiments of the present invention generally relate to sputtering of materials. In particular, the invention relates to sputtering voltage used during physical vapor deposition of large area substrates to prevent arcing. One embodiment of the invention describes an apparatus for sputtering materials on rectangular substrates at a voltage less than 400 volts, that comprises a sputtering target; wherein the target is biased at a voltage less than 400 volts during sputtering materials on the rectangular substrates, a grounded shield surrounding the sputtering target, wherein the shortest distance between the grounded shield and the sputtering target is less than the plasma dark space thickness, a magnetron in the back of the sputtering target, where in the edge of the magnetron does not overlap the grounded shield, and an antenna structure placed between the sputtering target and the substrate, wherein the antenna structure is grounded during sputtering.

摘要翻译： 本发明的实施例一般涉及材料的溅射。 特别地，本发明涉及在大面积基板的物理气相沉积期间使用的溅射电压以防止电弧。 本发明的一个实施例描述了一种用于在小于400伏的电压下在矩形基板上溅射材料的装置，其包括溅射靶; 其中在矩形基板上的溅射材料中的靶材被偏置在小于400伏特的电压，围绕溅射靶的接地屏蔽层，其中接地屏蔽层和溅射靶材之间的最短距离小于等离子体暗室厚度， 溅射靶的背面的磁控管，其中在磁控管的边缘处不与接地的屏蔽层重叠，以及放置在溅射靶和衬底之间的天线结构，其中天线结构在溅射期间接地。

公开(公告)号：US20060283703A1

公开(公告)日：2006-12-21

申请号：US11146763

申请日：2005-06-06

申请人： Hien-Minh Le ,  Akihiro Hosokawa

发明人： Hien-Minh Le ,  Akihiro Hosokawa

IPC分类号： C23C14/00

CPC分类号： C23C14/3407 ,  H01J37/3435 ,  Y10T29/49856 ,  Y10T29/49863 ,  Y10T29/49865 ,  Y10T29/49885

摘要： A target assembly including a plurality of target tiles bonded to a backing plate by adhesive, for example of indium or conductive polymer, filled into recesses in the backing plate formed beneath each of the target tiles. A sole peripheral recess formed as a rectangular close band may be formed inside the tile periphery. Additional recesses may be formed inside the peripheral recess, preferably symmetrically arranged about perpendicular bisectors of rectangular tiles. The depth and width of the recesses may be varied to control the amount of stress and the stress direction.

摘要翻译： 包括通过粘合剂（例如铟或导电聚合物）粘合到背板的多个目标瓦片的目标组件填充到形成在每个目标瓦片下方的背板中的凹部中。 形成为矩形紧密带的唯一周边凹部可以形成在瓷砖周边内。 可以在周边凹部内部形成附加的凹槽，优选地围绕矩形瓦片的垂直平分线对称地布置。 可以改变凹部的深度和宽度以控制应力和应力方向的量。

公开(公告)号：US20060283702A1

公开(公告)日：2006-12-21

申请号：US11158116

申请日：2005-06-21

申请人： Akihiro Hosokawa

发明人： Akihiro Hosokawa

IPC分类号： C23C14/32 ,  C23C14/00

CPC分类号： C23C14/35 ,  H01J2237/0206 ,  H01J2237/022

摘要： A power supply for use in a physical vapor deposition chamber having a target and a substrate support, comprising a power source configured to bias the target with a sputtering voltage relative to the substrate support and configured to bias the target with a reverse voltage about 10 or more times for a period of about one second after an arc is detected inside the physical vapor deposition chamber

摘要翻译： 一种用于物理气相沉积室的电源，其具有靶和衬底支撑件，包括电源，其被配置为相对于所述衬底支撑件以溅射电压偏压所述靶，并且被配置为以约10的反向电压偏压所述靶， 在物理气相沉积室内检测到电弧之后的时间大约一秒钟的时间

公开(公告)号：US07022948B2

公开(公告)日：2006-04-04

申请号：US10885468

申请日：2004-07-06

申请人： Quanyuan Shang ,  Janine Kardokus ,  Akihiro Hosokawa

发明人： Quanyuan Shang ,  Janine Kardokus ,  Akihiro Hosokawa

IPC分类号： F27B5/14

CPC分类号： H01L21/67109

摘要： Embodiments of the invention generally provide an apparatus and a method for providing a uniform thermal profile to a plurality of substrates during heat processing. In one embodiment, a cassette containing one or more heated substrate supports is moveably disposed within a heating chamber having an about uniform thermal profile therein to more uniformly heat the substrates.