摘要:
A refrigerator cabinet includes a shell having first and second laterally spaced, upstanding side walls that are interconnected by a top wall, each of the walls includes an in-turned front edge portion defining a liner receiving cavity. The shell further includes a mullion bar, which partitions the shell into first and second liner cavities, and a base member. Both the mullion bar and base member have respective liner receiving portions. With this arrangement, first and second liners are adapted to be inserted into their respective cavities and flexed such that three sides are inserted into the liner receiving cavities, while the remaining side is positioned against a land of the mullion bar or base member. Once in place, the liners are secured through a mullion bar cover and a base member cover. This construction combines the benefits of a front-load process with that of a flex-load process, lowering assembly time without the need to reinforce the liner.
摘要:
A mobile device-to-HTTP protocol gateway (MHG, or “MO Gateway”) which translates between Wireless Mobile Originated commands from an SMSC, and an application server on the Internet (i.e., a “web IP Server”). A wireless Internet gateway establishes communications with one or more relevant SMSCs using standard format SMPP commands, and the MHG utilizes HTTP protocol POST messages to post short messages originated at the mobile device to a particular URL. Return results are received by the MHG via HTTP protocol messages, translated to SMPP messages, and forwarded back to the SMSC for delivery to the mobile device. The wireless Internet Gateway communicates with the MHG using RMI protocol commands. An MHG in accordance with the principles of the present invention enables a developer to create mobile applications using standard web development tools, e.g., Java Servlets. The MHG allows standard format command messages to be used throughout the pathway between a mobile device and an application program on a web IP server at a particular URL.
摘要:
Semiconductor device structures and methods of fabricating semiconductor devices structures are provided that include a semi-insulating or insulating GaN epitaxial layer on a conductive semiconductor substrate and/or a conductive layer. The semi-insulating or insulating GaN epitaxial layer has a thickness of at least about 4 μm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive SiC substrate and an insulating or semi-insulating GaN epitaxial layer on the conductive SiC substrate. The GaN epitaxial layer has a thickness of at least about 4 μm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive GaN substrate, an insulating or semi-insulating GaN epitaxial layer on the conductive GaN substrate, a GaN based semiconductor device on the GaN epitaxial layer and a via hole and corresponding via metal in the via hole that extends through layers of the GaN based semiconductor device and the GaN epitaxial layer.
摘要:
A system and method improves linearly-polarized microstrip patch antenna performance and fabrication through the incorporation of a pin fin ground plane and an integral antenna feed assembly. In one embodiment, a patch antenna system includes an antenna area with a patch antenna that provides radio communications. A heat dissipation member is coupled to the antenna area and includes a plurality of pins that provide for both the dissipation of heat from the antenna area and a ground plane for the antenna area. An antenna feed line is further coupled with the antenna patch for providing an electrical connection from the antenna patch to other electronic circuitries, such as a wireless device that may be mechanically coupled to the heat dissipation member. Heat generated during the operation of the wireless device is directed to ambient air by way of the heat dissipation member.
摘要:
High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.
摘要:
Transistor fabrication includes forming a nitride-based channel layer on a substrate, forming a barrier layer on the nitride-based channel layer, forming a contact recess in the barrier layer to expose a contact region of the nitride-based channel layer, forming a contact layer on the exposed contact region of the nitride-based channel layer, for example, using a low temperature deposition process, forming an ohmic contact on the contact layer and forming a gate contact disposed on the barrier layer adjacent the ohmic contact. A high electron mobility transistor (HEMT) and methods of fabricating a HEMT are also provided. The HEMT includes a nitride-based channel layer on a substrate, a barrier layer on the nitride-based channel layer, a contact recess in the barrier layer that extends into the channel layer, an n-type nitride-based semiconductor material contact region on the nitride-based channel layer in the contact recess, an ohmic contact on the nitride-based contact region and a gate contact disposed on the barrier layer adjacent the ohmic contact. The n-type nitride-based semiconductor material contact region and the nitride-based channel layer include a surface area enlargement structure.
摘要:
A tile roof ridge row vent and the method of its use and construction are disclosed. The ridge row vent is designed for use with either barrel tile or flat tile. The tile roof ridge row vent includes an elongate member having a vertical section and a side section connected to allow air flow therebetween. The vertical section has a lower sealing skirt that extends under the top row of roof tiles and the side section includes plurality of ventilation openings angled downwardly and outwardly to allow air to exit the vent while a filtration media aids in preventing rain or other inclement weather from entering the vent. A second embodiment is shown for use with a single sided or mansard type roof. A third embodiment is shown for use in high wind and hurricane prone areas with an angled roof and includes an external baffle added to the ridge row vent. A fourth embodiment utilizing the ridge row vent with the external baffle is shown for use with a mansard type roof.
摘要:
The thrust of a rocket motor can be varied while maintaining efficiency over a range of pressure ratios using a design that allows for changing the relative position of a plug and a combustion chamber exit. The plug or the chamber exit may be attached to an adaptive control system for position modification. The plug may be positioned in a plug nozzle configuration or in an expansion-deflection (ED) configuration. In either configuration, the elongated downstream portion of the plug allows for efficiency over a wide range of pressure ratios, while ability to change plug position with respect to the chamber exit allows adjustment of rocket thrust.
摘要:
A pressure equalization system is provided for starting a compressor while maintaining the condenser at a high pressure and includes a valve and a bleed port. The compressor has a compressor inlet for receiving a fluid at a first pressure and a compressor outlet for discharging the fluid at a second pressure, and is operable to compress the fluid from the first pressure to the second pressure. The valve is proximate to and in fluid communication with the compressor outlet and is movable to an open position when the compressor is operating to permit the fluid at the second pressure to flow through the valve and is movable to a closed position when the compressor stops operating to prevent backflow of the fluid at the second pressure through the valve toward the compressor inlet. The bleed port is upstream of the valve and in fluid communication with the compressor inlet to equalize the pressure of the fluid contained in the compressor when the compressor stops operating.
摘要:
A method, apparatus, system, and signal-bearing medium that in an embodiment request a program or programs to tune themselves to run faster or slower if a service class is not meeting its performance goal. In an embodiment, the program is repeatedly requested to incrementally tune itself until the performance goal is met or until no further improvement occurs. In various embodiments, the programs to be requested to tune themselves are selected based on whether the programs are bottlenecks for the service class, whether the programs do the majority of work for the service class, whether the programs easily meet their own performance goals, or whether the programs are low priority. In this way, the programs may be performance tuned in a way that is more effective and less intrusive than by adjusting global, system-level resource allocations.