公开(公告)号：US20060091402A1

公开(公告)日：2006-05-04

申请号：US11258998

申请日：2005-10-27

申请人： Hiromu Shiomi ,  Hiroyuki Kinoshita

发明人： Hiromu Shiomi ,  Hiroyuki Kinoshita

IPC分类号： H01L31/0312

CPC分类号： C30B29/36 ,  C30B23/00 ,  Y10S438/931

摘要： SiC single crystal that includes a first dopant functioning as an acceptor, and a second dopant functioning as a donor is provided, where the content of the first dopant is no less than 5×1015 atoms/cm3, the content of the second dopant is no less than 5×1015 atoms/cm3, and the content of the first dopant is greater than the content of the second dopant. A manufacturing method for silicon carbide single crystal is provided with the steps of: fabricating a raw material by mixing a metal boride with a material that includes carbon and silicon; vaporizing the raw material; generating a mixed gas that includes carbon, silicon, boron and nitride; and growing silicon carbide single crystal that includes boron and nitrogen on a surface of a seed crystal substrate by re-crystallizing the mixed gas on the surface of the seed crystal substrate.

摘要翻译： 提供包括用作受体的第一掺杂剂和用作供体的第二掺杂剂的SiC单晶，其中第一掺杂剂的含量不小于5×10 15原子/ 3，第二掺杂剂的含量不小于5×10 15原子/ cm 3，第一掺杂剂的含量大于 第二掺杂剂。 提供了一种碳化硅单晶的制造方法，其特征在于：通过将金属硼化物与包含碳和硅的材料混合来制造原料; 蒸发原料; 产生包括碳，硅，硼和氮化物的混合气体; 以及通过使晶种基板的表面上的混合气体再结晶，在晶种基板的表面上生长包含硼和氮的碳化硅单晶。

公开(公告)号：US20050101148A1

公开(公告)日：2005-05-12

申请号：US10705631

申请日：2003-11-08

申请人： Dawn Hopper ,  Hiroyuki Kinoshita ,  Christy Woo

发明人： Dawn Hopper ,  Hiroyuki Kinoshita ,  Christy Woo

IPC分类号： H01L21/768 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76844 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76865

摘要： According to one exemplary embodiment, a method for forming a contact over a silicide layer situated in a semiconductor die comprises a step of depositing a barrier layer on sidewalls of a contact hole and on a native oxide layer situated at a bottom of the contact hole, where the sidewalls are defined by the contact hole in a dielectric layer. The step of depositing the barrier layer on the sidewalls of the contact hole and on the native oxide layer can be optimized such that the barrier layer has a greater thickness at a top of the contact hole than a thickness at the bottom of the contact hole. According to this exemplary embodiment, the method further comprises a step of removing a portion of the barrier layer and the native oxide layer situated at the bottom of the contact hole to expose the silicide layer.

摘要翻译： 根据一个示例性实施例，用于在位于半导体管芯中的硅化物层上形成接触的方法包括在接触孔的侧壁和位于接触孔的底部的自然氧化物层上沉积阻挡层的步骤， 其中侧壁由电介质层中的接触孔限定。 可以优化将阻挡层沉积在接触孔的侧壁和自然氧化物层上的步骤，使得阻挡层在接触孔的顶部具有比接触孔底部的厚度更大的厚度。 根据该示例性实施例，该方法还包括去除位于接触孔底部的阻挡层和自然氧化物层的一部分以露出硅化物层的步骤。

公开(公告)号：US06855608B1

公开(公告)日：2005-02-15

申请号：US10463643

申请日：2003-06-17

申请人： Mark Ramsbey ,  Mark W. Randolph ,  Jean Yee-Mei Yang ,  Hiroyuki Kinoshita ,  Cyrus Tabery ,  Jeff P. Erhardt ,  Tazrien Kamal ,  Jaeyong Park ,  Emmanuil H. Lingunis

发明人： Mark Ramsbey ,  Mark W. Randolph ,  Jean Yee-Mei Yang ,  Hiroyuki Kinoshita ,  Cyrus Tabery ,  Jeff P. Erhardt ,  Tazrien Kamal ,  Jaeyong Park ,  Emmanuil H. Lingunis

IPC分类号： G11C16/04 ,  H01L21/336 ,  H01L21/8246 ,  H01L27/105

CPC分类号： H01L27/11568 ,  G11C16/0475 ,  G11C16/0491 ,  H01L27/105 ,  H01L27/11573

摘要： A method of fabricating a planar architecture charge trapping dielectric memory cell array with rectangular gates comprises fabricating a multi-layer charge trapping dielectric on the surface of a substrate. The layer adjacent to the substrate may be an oxide. A polysilicon layer is deposited over the charge trapping dielectric. A word line mask is applied over the polysilicon layer to mask linear word lines in a first direction and to expose trench regions there between and the trenches are etched to expose the charge trapping dielectric in the trench regions. A bit line mask is applied over the polysilicon layer to mask gates in a second direction perpendicular to the first direction and to expose bit line regions there between and the bit lines are etched to expose the oxide in the bit line regions. The bit lines are implanted and insulating spacers are fabricated on exposed sidewalls. The oxide is removed to expose the substrate between insulating spacers in the bit line regions and a conductor is fabricated thereon to enhance conductivity of each bit line.

摘要翻译： 制造具有矩形栅极的平面架构电荷俘获介质存储单元阵列的方法包括在衬底的表面上制造多层电荷俘获电介质。 与衬底相邻的层可以是氧化物。 在电荷捕获电介质上沉积多晶硅层。 在多晶硅层上施加字线掩模以在第一方向上屏蔽线性字线并且在其间露出沟槽区域，并且蚀刻沟槽以暴露沟槽区域中的电荷俘获电介质。 将位线掩模施加在多晶硅层上以在垂直于第一方向的第二方向上屏蔽栅极，并在其间暴露位线区域，并蚀刻位线以暴露位线区域中的氧化物。 植入位线，并在暴露的侧壁上制造绝缘间隔物。 去除氧化物以在位线区域中的绝缘间隔物之间​​露出衬底，并且在其上制造导体以增强每个位线的导电性。

公开(公告)号：US06809010B1

公开(公告)日：2004-10-26

申请号：US08808315

申请日：1997-02-28

申请人： Hiroyuki Kinoshita ,  Motohiro Umehara

发明人： Hiroyuki Kinoshita ,  Motohiro Umehara

IPC分类号： H01L2178

CPC分类号： H01S5/32341 ,  C30B29/20 ,  C30B33/00 ,  G02B1/02 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/0422 ,  H01S5/3202

摘要： The present invention relates to a sapphire monocrystalline body to be used as the substrate for a semiconductor for electronic parts or component parts, and to a monocrystalline sapphire substrate. The invention also relates to a method for working the same. The invention is based cleavage along the plane R of the sapphire monocrystalline body which cleavage is easy to accomplish and provides a surface high in precision. The inventive process includes forming linear crack parallel or vertical to a reference plane of the substrate, with a microcrack line as a starting point, to develop a crack in a thickness direction of the body.

摘要翻译： 本发明涉及用作电子部件或组件的半导体用基板和单晶蓝宝石基板的蓝宝石单晶体。 本发明还涉及其工作方法。 本发明是沿着蓝宝石单晶体的平面R进行的切割，其切割容易实现并提供高精度的表面。 本发明的方法包括以微裂纹线为起点形成平行或垂直于基片的参考平面的线性裂纹，以在本体的厚度方向上形成裂缝。

公开(公告)号：US06363068B1

公开(公告)日：2002-03-26

申请号：US09098907

申请日：1998-06-17

申请人： Hiroyuki Kinoshita

发明人： Hiroyuki Kinoshita

IPC分类号： H04L1228

CPC分类号： H04L12/4625

摘要： A bridge that can effectively use plural paths by restricting a single path by a spanning tree algorithm, thus preventing that a broadcast packet is circulated in a looped communication path when two neighbor brides configuring a spanning tree are physically connected with plural paths. The bridge incorporates a correspondence table for the correspondence between the transmission source Mac address and the transmission destination port of a packet. A transmission source Mac address registration section decides the transmission destination port of a packet to be transmitted from the port to other bridge. The transmission destination port is cataloged on the table. When the transmission packet is a broadcast packet or BPDU packet, it is divided to a specific port among ports of the bridge. Other packets are divided to the corresponding ports by referring to the content cataloged on the table. Thus all the paths can be effectively used.

摘要翻译： 一种可以通过生成树算法限制单个路径有效地使用多个路径的桥，从而防止当配置生成树的两个邻居新娘与多个路径物理连接时，广播包在循环通信路径中循环。 桥接器包括用于发送源Mac地址和分组的发送目的地端口之间的对应关系的对应表。 发送源Mac地址注册部分确定要从该端口发送到另一个桥的分组的发送目的地端口。 传输目标端口在表上编目。 当传输分组是广播分组或BPDU分组时，它被划分到网桥的端口中的特定端口。 其他数据包通过参考表上编目的内容划分为相应的端口。 因此，可以有效地使用所有的路径。

公开(公告)号：US06306713B1

公开(公告)日：2001-10-23

申请号：US09799469

申请日：2001-03-05

申请人： YongZhong Hu ,  Fei Wang ,  Wenge Yang ,  Yu Sun ,  Hiroyuki Kinoshita

发明人： YongZhong Hu ,  Fei Wang ,  Wenge Yang ,  Yu Sun ,  Hiroyuki Kinoshita

IPC分类号： H01L21336

CPC分类号： H01L21/76897 ,  H01L21/76895 ,  H01L2924/3011

摘要： A method of manufacturing a semiconductor device is provided in which multi-layer structures are formed on a semiconductor substrate to form core and peripheral regions. Sidewall spacers are formed around the multi-layer structures and source and drain regions are implanted adjacent the sidewall spacers. The multi-layer structures and the source and drain regions are silicided and a stop layer is deposited over the semiconductor substrate after which a dielectric layer is deposited over the stop layer. A photoresist contact mask is deposited, processed, and used to form core contact openings over the core region, which expose the multi-layer structure in addition to the source and drain regions while covering the peripheral region. Protective secondary sidewall spacers are formed in the core contact openings over the exposed multi-layer structures. A second photoresist contact mask is deposited, processed, and used to form peripheral local interconnect openings over the peripheral region which the source and drain regions and portions of the plurality of multi-layer structures in the peripheral region while covering the core region. A conductive material is deposited over the dielectric layer and in the core contact and peripheral local interconnect openings and is chemical mechanical planarized to remove the conductive material over the dielectric layer so the conductive material is left isolated in the core and peripheral contact openings.

摘要翻译： 提供一种制造半导体器件的方法，其中在半导体衬底上形成多层结构以形成芯和周边区域。 围绕多层结构形成侧壁间隔物，并且将源极和漏极区域相邻于侧壁间隔物注入。 多层结构和源极和漏极区域被硅化，并且在半导体衬底上沉积停止层，之后在停止层上沉积电介质层。 光致抗蚀剂接触掩模被沉积，加工并用于在芯部区域上形成芯接触开口，除了覆盖周边区域之外，还暴露多层结构以及源极和漏极区域。 保护性次级侧壁间隔件形成在暴露的多层结构上的芯接触开口中。 第二光致抗蚀剂接触掩模被沉积，加工并用于在外围区域上形成周边局部互连开口，周边区域是外围区域的源极和漏极区域以及多个多层结构的部分，同时覆盖芯部区域。 导电材料沉积在电介质层上，并在芯接触和外围局部互连开口中沉积，并进行化学机械平面化以去除电介质层上的导电材料，使得导电材料在芯和外围接触开口中被隔离。

公开(公告)号：US06293670B1

公开(公告)日：2001-09-25

申请号：US09594684

申请日：2000-06-16

申请人： Masahiro Taniguro ,  Tetsuo Suzuki ,  Hiroyuki Saito ,  Koichi Tanno ,  Haruyuki Yanagi ,  Makoto Kawarama ,  Hiroyuki Kinoshita ,  Masaya Shinmachi ,  Tan At Ming

发明人： Masahiro Taniguro ,  Tetsuo Suzuki ,  Hiroyuki Saito ,  Koichi Tanno ,  Haruyuki Yanagi ,  Makoto Kawarama ,  Hiroyuki Kinoshita ,  Masaya Shinmachi ,  Tan At Ming

IPC分类号： B41J201

CPC分类号： B41J11/08 ,  B41J11/005 ,  B41J13/10

摘要： An ink jet recording method forms an ink jet image on a recording medium by serially moving an ink jet recording head having a plurality of ink discharge ports arranged in an array along a conveyance direction of the recording medium. The method includes the step of providing a platen having a planar section upstream in the conveyance direction and a slant section slanted downstream in the conveyance direction and in a direction parting from the ink discharge ports, opposed to an array of the ink discharge ports when the ink jet recording head serially moves. The method further includes the step of forming an ink jet image on the recording medium by ink discharge from the ink discharge ports when the ink jet recording head moves at least three times across a same area of the recording medium, a reverse side of which is supported by the platen.

摘要翻译： 喷墨记录方法通过沿着记录介质的传送方向串联移动具有排列成阵列的多个喷墨口的喷墨记录头，在记录介质上形成喷墨图像。 该方法包括以下步骤：在输送方向上游设置有平面部分的台板，以及倾斜部分，该倾斜部分沿着输送方向向下游倾斜，并且与从喷墨口排列的方向相反， 喷墨记录头连续移动。 该方法还包括当喷墨记录头在记录介质的相同区域移动至少三次时，通过从喷墨口喷墨而在记录介质上形成喷墨图像的步骤，反面是 由压板支撑。

公开(公告)号：US6027211A

公开(公告)日：2000-02-22

申请号：US683649

申请日：1996-07-15

申请人： Yasuhiro Unosawa ,  Hiroyuki Saito ,  Koichi Tanno ,  Haruyuki Yanagi ,  Makoto Kawarama ,  Hiroyuki Kinoshita ,  Masaya Shinmachi ,  Tan At Ming

发明人： Yasuhiro Unosawa ,  Hiroyuki Saito ,  Koichi Tanno ,  Haruyuki Yanagi ,  Makoto Kawarama ,  Hiroyuki Kinoshita ,  Masaya Shinmachi ,  Tan At Ming

IPC分类号： B41J11/00 ,  B41J13/02 ,  B41J13/10 ,  B41J2/01

CPC分类号： B41J13/106 ,  B41J11/005 ,  B41J13/02

摘要： A sheet feeding apparatus includes a discharge rotary body, a pinch rotary body, a drive transmission rotary body and a regulation member. The discharge rotary body feeds and discharges a sheet from a recording section. The pinch rotary body is disposed facing the discharge rotary body for pinching and feeding the sheet along the discharge rotary body. The drive transmission rotary body has a circumferential surface contacting a circumferential surface of the discharge rotary body with a pressure exerted in a direction different from a straight line drawn between rotary centers of the discharge rotary body and the pinch rotary body, for rotationally driving the discharge rotary body. The regulation member contacts the discharge rotary body when deformation of the discharge rotary body exceeds a predetermined quantity arising due to pressure from the drive transmission rotary body and regulates deformation of the discharge rotary body from exceeding the predetermined quantity.

摘要翻译： 片材进给装置包括排出旋转体，夹送旋转体，驱动传递旋转体和调节构件。 排出旋转体从记录部分供给和排出片材。 夹紧旋转体设置成面向排出旋转体，用于沿着排出旋转体夹紧和进给片材。 驱动传递旋转体具有与排出旋转体的周面接触的周向表面，该压力施加在与排出旋转体的旋转中心和夹紧旋转体之间的直线相反的方向上施加的压力，用于旋转地驱动排出 旋转体。 当排出旋转体的变形超过由于驱动传动旋转体的压力而产生的预定量并且调节排出旋转体的变形超过预定量时，调节构件接触排出旋转体。

公开(公告)号：US5751301A

公开(公告)日：1998-05-12

申请号：US725379

申请日：1996-10-03

申请人： Satoshi Saikawa ,  Tetsuo Suzuki ,  Soichi Hiramatsu ,  Masahiro Taniguro ,  Hiroyuki Saito ,  Haruyuki Yanagi ,  Takashi Nojima ,  Hiroyuki Kinoshita ,  Hideaki Kawakami

发明人： Satoshi Saikawa ,  Tetsuo Suzuki ,  Soichi Hiramatsu ,  Masahiro Taniguro ,  Hiroyuki Saito ,  Haruyuki Yanagi ,  Takashi Nojima ,  Hiroyuki Kinoshita ,  Hideaki Kawakami

IPC分类号： B41J2/01 ,  B41J2/165 ,  B41J2/18 ,  B41J2/185 ,  B41J25/308

CPC分类号： B41J25/3082 ,  B41J2/16508 ,  B41J2/1652

摘要： An ink jet recording apparatus, in which a recording head records on a recording medium disposed above a platen, includes a carriage for moving the recording head, a recovery mechanism having a contacting member, a guide shaft and a limiting mechanism. The guide shaft guides the carriage to a recording area and to a separate recovery area, and positions the recovery mechanism so that the contacting member is capable of contacting the surface of the recording head on which an ink discharge port is provided. The limiting mechanism has a guide surface and an elastic member, and limits the rotational movement of the carriage with respect to the guide shaft; the elastic member maintains the position of the carriage with respect to the platen at the recording area by applying an elastic force to the guide member.

摘要翻译： 一种喷墨记录装置，其中记录头记录在设置在压板上的记录介质上，包括用于移动记录头的滑架，具有接触构件的回收机构，引导轴和限制机构。 引导轴将托架引导到记录区域和单独的恢复区域，并且定位回收机构，使得接触构件能够接触设置有排墨口的记录头的表面。 限位机构具有引导面和弹性部件，限制滑架相对于导向轴的旋转运动; 弹性构件通过向引导构件施加弹力而保持滑架相对于压板在记录区域的位置。

公开(公告)号：US5620174A

公开(公告)日：1997-04-15

申请号：US674990

申请日：1996-07-03

申请人： Masahiro Taniguro ,  Tetsuo Suzuki ,  Soichi Hiramatsu ,  Hiroyuki Saito ,  Haruyuki Yanagi ,  Takashi Nojima ,  Satoshi Saikawa ,  Hiroyuki Kinoshita ,  Hideaki Kawakami

发明人： Masahiro Taniguro ,  Tetsuo Suzuki ,  Soichi Hiramatsu ,  Hiroyuki Saito ,  Haruyuki Yanagi ,  Takashi Nojima ,  Satoshi Saikawa ,  Hiroyuki Kinoshita ,  Hideaki Kawakami

IPC分类号： B41J11/00 ,  B41J13/02 ,  B41J13/10 ,  B41J13/20 ,  B65H5/00

CPC分类号： B41J13/02 ,  B41J11/005 ,  B41J13/10 ,  B41J13/20 ,  Y10S271/902

摘要： The present invention provides a sheet conveying apparatus with a convey roller for conveying a sheet; a plurality of pinch rollers arranged along the convey roller and adapted to urge the sheet against the convey roller; a pinch roller holder formed as one piece for supporting the plurality of pinch rollers, the rigidity of the pinch roller holder in a sheet conveying direction being greater than the rigidity of the pinch roller holder in a direction perpendicular to the sheet conveying direction; and a biasing device for acting on the pinch roller holder to urge the pinch rollers against the convey roller.

摘要翻译： 本发明提供一种具有用于输送片材的输送辊的片材输送装置; 沿着所述输送辊布置的多个夹送辊，并且适于将所述纸张推靠在所述输送辊上; 夹持辊保持器形成为一体以支撑多个夹送辊，压纸辊保持器在纸张输送方向上的刚性大于夹送辊保持器在垂直于纸张输送方向的方向上的刚性; 以及用于作用在夹送辊保持器上以将夹送辊推压抵靠传送辊的偏压装置。