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公开(公告)号：US4589117A
公开(公告)日：1986-05-13
申请号：US502589
申请日：1983-06-09
IPC分类号： H01S3/02 , H01S3/06 , H01S5/00 , H01S5/02 , H01S5/026 , H01S5/10 , H01S5/12 , H01S5/227 , H01S3/19
CPC分类号： H01S5/1032 , H01S5/026 , H01S5/227 , H01S5/0205 , H01S5/12
摘要： A semiconductor laser, in which active layers are provided on the top surface of the mesa and the remainder surface in a substrate as a first semiconductor layer. Second semiconductor layers are provided on the active layers to such a thickness that the second semiconductor layer may not reach the first semiconductor layer on the mesa. Third semiconductor layers are provided on the second semiconductor layer to such a thickness that the third semiconductor layers may be flush with or higher than the first semiconductor layer on the mesa, so that the first semiconductor layer on the top surface of the mesa is just jointed with the third semiconductor layer on the remainder surface in the substrate.
摘要翻译： 半导体激光器，其中有源层设置在台面的顶表面上，其余表面设置在基板中作为第一半导体层。 第二半导体层设置在有源层上，使得第二半导体层可能不到达台面上的第一半导体层。 第三半导体层设置在第二半导体层上，使得第三半导体层可以与台面上的第一半导体层齐平或更高，使得台面的顶表面上的第一半导体层刚刚接合 其中衬底中剩余表面上的第三半导体层。
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公开(公告)号：US4516243A
公开(公告)日：1985-05-07
申请号：US436928
申请日：1982-10-27
申请人： Katsuyuki Utaka , Kazuo Sakai , Shigeyuki Akiba
发明人： Katsuyuki Utaka , Kazuo Sakai , Shigeyuki Akiba
CPC分类号： H01S5/12 , H01S2301/14 , H01S5/1215
摘要： A distributed feedback semiconductor laser which has, in an active layer or an adjoining layer, first corrugations causing periodic refractive index variations in the travelling direction of light and performs laser oscillation by the injection of a current into said active layer portion. In accordance with the present invention, second corrugations are formed to be aligned obliquely to said first corrugations, thereby causing additional loss to the TM mode to permit oscillation in the TE mode alone.
摘要翻译： 一种分布反馈半导体激光器，其在有源层或邻接层中具有导致光的行进方向周期性折射率变化的第一波纹，并且通过向所述有源层部分注入电流来执行激光振荡。 根据本发明，第二波纹被形成为与所述第一波纹倾斜对准，从而对TM模式造成额外的损耗，以允许单独在TE模式中振荡。
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公开(公告)号：US4383266A
公开(公告)日：1983-05-10
申请号：US187744
申请日：1980-09-16
IPC分类号： H01L31/107 , H01L29/90
CPC分类号： H01L31/1075
摘要： An avalanche photo diode provided with a guard ring around a photo detecting region having a pn junction, in which semiconductor layers of the photo detecting region having a pn junction, different in conductivity type from a semiconductor of the guard ring, are composed of a second semiconductor layer formed in contact with a first semiconductor layer forming the pn junction of the photo detecting region and of the same conductivity type as the semiconductor of the guard ring, and a third semiconductor layer formed in contact with the second semiconductor layer and having a larger band gap than the second semiconductor layer, and in which the tip end of the guard ring is formed to extend down into the third semiconductor layer. An avalanche photo diode can be formed to be provided with a uniformly thick, first semiconductor layer forming a photo detecting region and a second semiconductor layer forming a first pn junction between it and the first semiconductor layer, in which third and fourth semiconductor layers of the same composition as each other, respectively having larger band gaps than those of the first and second semiconductor layers, are provided to form therebetween a second pn junction which extends from the first pn junction to surround the peripheral portion of the first semiconductor layer.
摘要翻译： 一种雪崩光电二极管，其在具有pn结的光检测区域周围设置有保护环，其中具有pn结的光检测区域的半导体层与导电类型不同于保护环的半导体，由第二 形成为与形成光检测区域的pn结并且具有与保护环的半导体相同的导电类型的第一半导体层形成的半导体层，以及形成为与第二半导体层接触并具有较大的第三半导体层的第三半导体层 带隙比第二半导体层，并且其中保护环的尖端形成为向下延伸到第三半导体层。 可以形成雪崩光电二极管，以形成均匀厚的形成光检测区域的第一半导体层和在其与第一半导体层之间形成第一pn结的第二半导体层，其中第三半导体层 提供分别具有比第一和第二半导体层的带隙大的带隙的彼此相同的组成，以形成从第一pn结延伸到围绕第一半导体层的周边部分的第二pn结。
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公开(公告)号：US4274103A
公开(公告)日：1981-06-16
申请号：US50628
申请日：1979-06-21
申请人： Takaya Yamamoto , Kazuo Sakai , Shigeyuki Akiba
发明人： Takaya Yamamoto , Kazuo Sakai , Shigeyuki Akiba
IPC分类号： H01L29/864 , H01L31/107 , H01L31/109 , H01L29/90 , H01L27/14 , H01L29/161
CPC分类号： H01L31/109 , H01L31/1075
摘要： An avalanche photodiode with a semiconductor hetero structure, in which a light absorbing region and an avalanche multiplying region where avalanche gain is attained are formed of different materials. The different materials may be two compound semiconductors of different compositions. The lattice constants of the two compound semiconductors may be matched with each other.
摘要翻译： 具有半导体异质结构的雪崩光电二极管，其中获得雪崩增益的光吸收区域和雪崩倍增区域由不同的材料形成。 不同的材料可以是两种不同组成的化合物半导体。 两个化合物半导体的晶格常数可以彼此匹配。
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公开(公告)号：US4788690A
公开(公告)日：1988-11-29
申请号：US942451
申请日：1986-12-16
申请人： Shigeyuki Akiba , Masashi Usami
发明人： Shigeyuki Akiba , Masashi Usami
IPC分类号： H01S5/00 , H01L31/153 , H01S5/026 , H01S5/0683 , H01S5/12 , H01S5/16 , H01S3/19 , H01L31/12 , H01S3/08
CPC分类号： H01S5/164 , H01L31/153 , H01S5/0264 , H01S5/0683 , H01S5/12 , H01S5/168
摘要： A distributed feedback semiconductor laser with monitor is disclosed, in which the energy gap of a cap layer formed on the laser region and the window region is smaller than the energy gap of the light emitting layer, and in which a pn junction isolated from a pn junction in the laser region is provided in the cap layer on the window region.
摘要翻译： 公开了一种具有监视器的分布式反馈半导体激光器，其中形成在激光区域和窗口区域上的盖层的能隙小于发光层的能隙，并且其中pn结与pn分离 激光区域中的接合点设置在窗口区域上的盖层中。
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公开(公告)号：US4701930A
公开(公告)日：1987-10-20
申请号：US764217
申请日：1985-08-09
摘要： A distributed feedback semiconductor laser, in which the periodic corrugations in the first region and the second region of the light emitting region of the DFB laser have different lengths or depths to make the intensities of the Bragg reflection of the first region and the second region different from each other, thereby obtaining asymmetrical light outputs from the both sides of the DFB laser.
摘要翻译： 分布式反馈半导体激光器，其中DFB激光器的发光区域的第一区域和第二区域中的周期性波纹具有不同的长度或深度，以使得第一区域和第二区域的布拉格反射的强度不同 从而从DFB激光器的两侧获得不对称的光输出。
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公开(公告)号：US4653059A
公开(公告)日：1987-03-24
申请号：US688566
申请日：1985-01-03
摘要： A distributed feedback semiconductor laser which has periodic corrugations formed in a light emitting layer or an adjoining layer to extend in the direction of travel of light. A window region formed by a semiconductor layer larger in energy gap than the light emitting layer is provided on the extension line of one end of a laser region formed in the light emitting layer. The length of the window region is so limited as to prevent substantial reflection of laser output light in the window region. The end face of the laser on the opposite side from the window region is coated with a film for increasing reflectivity.
摘要翻译： 一种分布式反馈半导体激光器，其具有在发光层或相邻层中形成的周期性波纹，以在光的行进方向上延伸。 由形成在发光层的激光区域的一端的延长线上设置由能隙比发光层大的半导体层形成的窗口区域。 窗口区域的长度被限制以防止激光输出光在窗口区域中的实质反射。 在与窗口区域相反的一侧上的激光器的端面涂覆有用于增加反射率的膜。
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公开(公告)号：US4648096A
公开(公告)日：1987-03-03
申请号：US660934
申请日：1984-10-15
摘要： A distributed feedback semiconductor laser which has periodic corrugations in a light emitting layer or an adjoining layer in the direction of travel of light and performs laser oscillation by the injection of carriers into said light emitting layer. In accordance with the present invention, there are provided, in the neighborhood of the center of a laser region, a region for changing the phase of the periodic corrugations by about 180 degrees, and, on the extension of the laser oscillation region at both sides thereof, a window region formed of a semiconductor larger in energy gap but smaller in refractive index than the light emitting layer, the length of the window region being so limited as to prevent substantial reflection of laser output light in the window region.
摘要翻译： 一种分布式反馈半导体激光器，其在光的行进方向上在发光层或邻接层中具有周期性波纹，并通过将载流子注入所述发光层来执行激光振荡。 根据本发明，在激光区域的中心附近设置用于将周期性波纹的相位改变约180度的区域，并且在两侧的激光振荡区域的延伸上 由能隙较大且折射率小于发光层的半导体形成的窗口区域，窗口区域的长度受到限制，以防止激光输出光在窗口区域中的实质反射。
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公开(公告)号：US4633474A
公开(公告)日：1986-12-30
申请号：US678244
申请日：1984-12-05
摘要： A distributed feedback semiconductor laser which has periodic corrugations formed in a layer adjoining a light emitting layer so as to extend in the direction of travel of light and performs laser oscillation by the injection of current into the light emitting layer, in which a part of at least one metal electrode has a TM mode suppressing region disposed at a position where light is essentially distributed in the thickwise direction of the laser. A window region formed of a semiconductor larger in energy gap than the light emitting layer is disposed at both ends of the laser oscillation region in the direction of travel of light, the length of the window region being limited so that no substantial reflection occurs therein.
摘要翻译： 一种分布式反馈半导体激光器，其具有在与发光层相邻的层中形成的周期性波纹，以沿着光的行进方向延伸，并且通过向发光层注入电流并执行激光振荡，其中， 至少一个金属电极具有设置在光在激光的厚度方向上基本分布的位置的TM模式抑制区域。 在光的行进方向上，在激光振荡区域的两端配置由能量差大于发光层的半导体形成的窗口区域，限制窗口区域的长度，使得不发生实质的反射。
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公开(公告)号：US4573161A
公开(公告)日：1986-02-25
申请号：US556294
申请日：1983-11-30
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/34306 , H01S5/3434
摘要： A semiconductor laser, in which layers on both sides of the light emitting region are each formed by laminating a plurality of semiconductor layers of different energy band gaps and thicknesses smaller than 0.03 .mu.m. The thickness of the thin film layer of at least one kind of the semiconductor thin film layers of a thickness less than 0.03 .mu.m varies in dependence upon the layers remoteness from the light emitting region. The light emitting region and the layers on both sides of the light emitting region are each formed of a mixed crystal which consists of indium, gallium, arsenic and phosphorus, or indium, gallium, aluminum and arsenic and which has a lattice constant difference less than 0.3% relative to indium phosphide.
摘要翻译： 通过层叠多个不同能带隙和小于0.03μm的厚度的半导体层，形成发光区域两侧的层的半导体激光器。 厚度小于0.03μm的至少一种半导体薄膜层的薄膜层的厚度根据与发光区域偏离的层次而变化。 发光区域和发光区域两侧的层均由铟，镓，砷和磷或铟，镓，铝和砷组成的混晶体形成，其晶格常数差小于 相对于磷化铟为0.3％。
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