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公开(公告)号：US4731641A
公开(公告)日：1988-03-15
申请号：US892479
申请日：1986-08-05
申请人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
发明人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
IPC分类号： H01L31/107 , H01L31/18 , H01L29/201 , H01L27/14 , H01L31/08
CPC分类号： H01L31/1075 , H01L31/18
摘要： An avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two different semiconductors is formed in a carrier multiplying region, the effective ionization coefficient ratio of carriers is raised by a quantum well layer formed by the thin film, multilayer periodic structure, and only electrons of large ionization coefficient are injected into the multiplying region, thereby to reduce noise in the APD.
摘要翻译： 具有量子阱层的雪崩光电二极管，其中在载流子倍增区域中形成由两个不同半导体构成的薄膜周期性多层结构，载流子的有效电离系数比由薄膜形成的量子阱层提高， 多层周期性结构，只有电离系数较大的电子注入乘法区域，从而降低APD中的噪声。
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公开(公告)号：US4682196A
公开(公告)日：1987-07-21
申请号：US806746
申请日：1985-12-09
IPC分类号： H01L29/205 , H01L31/0352 , H01L31/11 , H01L27/14 , H01L29/12
CPC分类号： H01L29/205 , H01L31/035281 , H01L31/11 , Y02E10/50
摘要： A semiconductor device, which is formed by a sequential lamination of a first semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3, a second semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, a third semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and a thickness less than 300 .ANG., a fourth semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, and a fifth semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and, in which the first and fifth semiconductor layers are the same in conductivity type and the third semiconductor layer is different in conductivity type from the fifth semiconductor layer. In accordance with the present invention, the energy gap of the third semiconductor layer is larger than the energy gaps of the second and fourth semiconductor layers. An annular region of a semi-insulating material or of the same conductivity type as that of the third semiconductor layer may be formed around an active region to extend from the fifth semiconductor layer to the second semiconductor layer.
摘要翻译： 一种半导体器件，其通过顺次层叠具有载流子浓度大于1017cm -3的第一半导体层，载流子浓度小于1016cm-3的第二半导体层，具有载流子浓度的第三半导体层 大于1017cm-3，厚度小于300，载流子浓度小于1016cm-3的第四半导体层和载流子浓度大于1017cm-3的第五半导体层，其中第一 并且第五半导体层的导电类型相同，并且第三半导体层的导电类型与第五半导体层不同。 根据本发明，第三半导体层的能隙大于第二和第四半导体层的能隙。 可以在有源区周围形成半绝缘材料或与第三半导体层相同的导电类型的环形区域，以从第五半导体层延伸到第二半导体层。
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公开(公告)号：US4660934A
公开(公告)日：1987-04-28
申请号：US710984
申请日：1985-03-12
CPC分类号： G03F7/095 , G02B5/1857 , G03F7/001 , Y10S359/90
摘要： A method for manufacturing diffraction grating, in which after forming, on a substrate, one of a negative type photoresist film (an N film) and a positive type photoresist film (a P film) to cover a first region A and the other of the negative type photoresist film and the positive type photoresist film, or the latter film on the former one to cover a second region B, the first region and the second region are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film. Another feature of the present invention resides in that after forming, on a substrate, a structure in which a negative type photoresist film (an N film) is formed to cover only a first region A and the negative type photoresist film is formed on a positive type photoresist film (a P film) to cover a second region B, the first region and the second region of the substrate are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film.
摘要翻译： 制造衍射光栅的方法，其中在基板上形成负型光致抗蚀剂膜（N膜）和正型光致抗蚀剂膜（P膜）之一以覆盖第一区域A和另一个 负型光致抗蚀剂膜和正型光致抗蚀剂膜，或者在前者的后者膜覆盖第二区域B，第一区域和第二区域受到双光束干涉曝光，从而形成衍射光栅，其中波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，在第一区域和第二区域中的相位彼此相反。 本发明的另一个特征在于，在基板上形成后，形成负型光致抗蚀剂膜（N膜）仅覆盖第一区域A并且负型光致抗蚀剂膜形成为阳性的结构 （P膜）覆盖第二区域B，对基板的第一区域和第二区域进行双光束干涉曝光，从而形成衍射光栅，其中第一区域和第二区域中的波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，彼此相反。
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公开(公告)号：US4573158A
公开(公告)日：1986-02-25
申请号：US699586
申请日：1985-02-08
申请人： Katsuyuki Utaka , Kazuo Sakai , Shigeyuki Akiba
发明人： Katsuyuki Utaka , Kazuo Sakai , Shigeyuki Akiba
IPC分类号： H01S5/00 , H01S5/06 , H01S5/0625 , H01S5/12 , H01S3/19
CPC分类号： H01S5/0625 , H01S5/0602 , H01S5/06255 , H01S5/12
摘要： A semiconductor laser of distributed feedback type, which is provided with a portion having periodic refractive index variations in the direction of light propagation in one of an active layer and a layer adjacent thereto and is caused to perform laser oscillation by injecting a current into the active layer portion. In accordance with the present invention, a current injection region having no periodic refractive index variations is formed on an extension of the portion having the periodic refractive index variations.
摘要翻译： 一种分布式反馈型半导体激光器，其具有在有源层和与其相邻的层之一上的光传播方向上具有周期性折射率变化的部分，并且通过向有源层注入电流而进行激光振荡 层部分。 根据本发明，在具有周期性折射率变化的部分的延伸部上形成不具有周期性折射率变化的电流注入区域。
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公开(公告)号：US4918496A
公开(公告)日：1990-04-17
申请号：US213608
申请日：1988-06-30
CPC分类号： B82Y20/00 , H01S5/34313 , H01S2302/00 , H01S5/0206 , H01S5/3201 , H01S5/3218 , H01S5/3403 , H01S5/3409 , H01S5/34306
摘要： An infrared emitting device for use in the 2 to 3 .mu.m region, which is low in the threshold current and operates over a wide temperature range. In accordance with the present invention, an InP substrate is employed in place of GaSb substrate and InAs substrate heretofore employed for the 2 to 3 .mu.m infrared semiconductor lasers. Moreover, as active layers or clad layers, one of more semiconductor layers are employed which differ in lattice constant from the InP substrate.
摘要翻译： 一种用于2〜3μm区域的红外发射装置，其阈值电流低，在宽温度范围内工作。 根据本发明，使用InP衬底代替用于2至3μm红外半导体激光器的GaSb衬底和InAs衬底。 此外，作为有源层或覆层，采用与InP衬底的晶格常数不同的多个半导体层之一。
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公开(公告)号：US5122844A
公开(公告)日：1992-06-16
申请号：US706542
申请日：1991-05-22
摘要： A quantum well structure is disclosed, which is comprised of a quantum well layer of a thickness substantially equal to the de Broglie wavelength of electrons and carrier confinement layers of an energy gap greater than that of the quantum well layer. A second material of a lattice constant different from that of a first material primarily for the quantum well layer is disposed in the quantum well layer to provide a phase shift in the period of the crystal lattice of the first material, thereby forming energy levels in the forbidden band of the quantum well layer. A semiconductor device which employs such a quantum well structure and is so constructed as to utilize its physical phenomenon which is caused by the energy levels in the forbidden band. In concrete terms, the present invention has its feature in allowing ease in the fabrication of an intermediate infrared or blue light emitting device, for instance.
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公开(公告)号：US4897845A
公开(公告)日：1990-01-30
申请号：US350088
申请日：1989-05-10
IPC分类号： G02F1/35 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/30 , H01L33/44 , H01L33/58 , H01S5/00 , H01S5/183 , H01S5/20 , H01S5/22 , H01S5/343 , H01S5/50
CPC分类号： B82Y20/00 , H01S5/2027 , H01S5/50 , H01S5/2203 , H01S5/34306 , H01S5/34313
摘要： A semiconductor optical amplifying element is disclosed which has a semiconductor multilayer structure including at least a first semiconductor layer for providing an optical gain in response to the injection of carriers thereinto, and a p-side electrode and an n-side electrode for the carrier injection. A first reflecting surface and a second reflecting surface are disposed thickwisely of the semiconductor multilayer structure and opposite to each other thereacross. The element is designed so that light incident thereon from the thickwise direction of the semiconductor multilayer structure is amplified by propagating through the element perpendicularly to the thickwise direction of the semiconductor multilayer structure while being multiple-reflected between the first reflecting surface and the second reflecting surface.
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公开(公告)号：US4874216A
公开(公告)日：1989-10-17
申请号：US210640
申请日：1988-06-23
IPC分类号： H04B10/27 , G02B6/34 , G02F1/01 , G02F1/015 , G02F1/025 , G02F1/125 , G02F1/313 , H04B10/00 , H04B10/29
CPC分类号： G02B6/12007 , G02B6/29329 , G02B6/29395 , G02F1/3137 , G02F1/0126 , G02F1/3138 , G02F2001/0152 , G02F2001/0154 , G02F2201/305 , G02F2203/055
摘要： A variable-waveguide optical branching filter is disclosed, in which a diffraction grating is formed in the cross region of two crossing waveguides, only light of a particular wavelength which is determined by the period of the diffraction grating is branched to a desired one of the waveguides, and the refractive index of the cross region is changed by control of a voltage or a current, or by way of irradiation with light, thereby changing the wavelength of light to be branched.
摘要翻译： 公开了一种可变波导光分波器，其中在两个交叉波导的交叉区域中形成衍射光栅，只有由衍射光栅的周期确定的特定波长的光被分支到所需的一个 波导，并且通过控制电压或电流或通过照射光来改变交叉区域的折射率，从而改变要分支的光的波长。
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公开(公告)号：US4665527A
公开(公告)日：1987-05-12
申请号：US669093
申请日：1984-11-06
CPC分类号： H01S5/18394 , H01S5/0424 , H01S5/0425
摘要： A distributed feedback semiconductor laser, in which a DFB region is formed by a plurality of first semiconductor layers and a plurality of second semiconductor layers larger in energy gap than the first semiconductor layers which are alternately arranged on a substrate with a period for developing a Bragg reflection at a desired wavelength. A p-type region is formed in a part of the DFB region in a manner to provide a plane of junction across the plurality of first semiconductor layers and the plurlaity of second semiconductor layers while an n-type region is formed in the remaining part of the DFB region. The plurality of first semiconductor layers and the plurality of second semiconductor layers are alternately deposited to form the DFB region.
摘要翻译： 一种分布式反馈半导体激光器，其中DFB区域由多个第一半导体层形成，并且能量间隔大于第一半导体层的多个第二半导体层，该第二半导体层交替布置在具有用于显影布拉格的周期的基板上 在所需波长的反射。 在DFB区域的一部分中，以提供跨越多个第一半导体层的结的平面和第二半导体层的多重性的方式形成p型区域，而在其余部分中形成n型区域 DFB区域。 多个第一半导体层和多个第二半导体层交替沉积以形成DFB区域。
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公开(公告)号：US4653058A
公开(公告)日：1987-03-24
申请号：US487124
申请日：1983-04-21
CPC分类号： H01S5/0264 , H01S5/12 , H01S5/2275
摘要： A distributed feedback semiconductor laser with a monitor, which has periodic corrugations on a light emitting layer or an adjoining layer in the direction of travel of light and performs laser oscillation by the injection of a current into said light emitting layer. In accordance with the present invention, a laser region forming said distributed feedback semiconductor laser and a monitor region for detecting the output of said laser region are disposed on the same substrate. A gap between said monitor region and said laser region is filled with a semiconductor of an energy bandgap larger than that of the light emitting layer of said laser region.
摘要翻译： 一种具有监视器的分布式反馈半导体激光器，其在光的行进方向上的发光层或邻接层上具有周期性波纹，并且通过将电流注入到所述发光层中而进行激光振荡。 根据本发明，形成所述分布式反馈半导体激光器的激光区域和用于检测所述激光区域的输出的监视区域设置在同一基板上。 所述监测区域和所述激光区域之间的间隙填充有比所述激光区域的发光层的能带隙大的能带隙的半导体。
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