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93 条记录 (耗时 0.02 秒)

    Avalanche photo diode
    2.
    发明授权
    Avalanche photo diode 失效
    雪崩光电二极管

    公开(公告)号：US4383266A

    公开(公告)日：1983-05-10

    申请号：US187744

    申请日：1980-09-16

    申请人： Kazuo Sakai ,  Yuichi Matsushima ,  Shigeyuki Akiba ,  Takaya Yamamoto

    发明人： Kazuo Sakai ,  Yuichi Matsushima ,  Shigeyuki Akiba ,  Takaya Yamamoto

    IPC分类号： H01L31/107 ,  H01L29/90

    CPC分类号： H01L31/1075

    摘要： An avalanche photo diode provided with a guard ring around a photo detecting region having a pn junction, in which semiconductor layers of the photo detecting region having a pn junction, different in conductivity type from a semiconductor of the guard ring, are composed of a second semiconductor layer formed in contact with a first semiconductor layer forming the pn junction of the photo detecting region and of the same conductivity type as the semiconductor of the guard ring, and a third semiconductor layer formed in contact with the second semiconductor layer and having a larger band gap than the second semiconductor layer, and in which the tip end of the guard ring is formed to extend down into the third semiconductor layer. An avalanche photo diode can be formed to be provided with a uniformly thick, first semiconductor layer forming a photo detecting region and a second semiconductor layer forming a first pn junction between it and the first semiconductor layer, in which third and fourth semiconductor layers of the same composition as each other, respectively having larger band gaps than those of the first and second semiconductor layers, are provided to form therebetween a second pn junction which extends from the first pn junction to surround the peripheral portion of the first semiconductor layer.

    摘要翻译： 一种雪崩光电二极管，其在具有pn结的光检测区域周围设置有保护环，其中具有pn结的光检测区域的半导体层与导电类型不同于保护环的半导体，由第二 形成为与形成光检测区域的pn结并且具有与保护环的半导体相同的导电类型的第一半导体层形成的半导体层，以及形成为与第二半导体层接触并具有较大的第三半导体层的第三半导体层 带隙比第二半导体层，并且其中保护环的尖端形成为向下延伸到第三半导体层。 可以形成雪崩光电二极管，以形成均匀厚的形成光检测区域的第一半导体层和在其与第一半导体层之间形成第一pn结的第二半导体层，其中第三半导体层 提供分别具有比第一和第二半导体层的带隙大的带隙的彼此相同的组成，以形成从第一pn结延伸到围绕第一半导体层的周边部分的第二pn结。

    Semiconductor laser with buffer layer
    4.
    发明授权
    Semiconductor laser with buffer layer 失效
    具有缓冲层的半导体激光器

    公开(公告)号：US4340966A

    公开(公告)日：1982-07-20

    申请号：US122171

    申请日：1980-02-19

    申请人： Shigeyuki Akiba ,  Yasuharu Suematsu ,  Shigehisa Arai ,  Masanobu Kodaira ,  Yoshio Itaya ,  Kenichi Iga ,  Chuichi Ota ,  Takaya Yamamoto ,  Kazuo Sakai

    发明人： Shigeyuki Akiba ,  Yasuharu Suematsu ,  Shigehisa Arai ,  Masanobu Kodaira ,  Yoshio Itaya ,  Kenichi Iga ,  Chuichi Ota ,  Takaya Yamamoto ,  Kazuo Sakai

    IPC分类号： H01L21/208 ,  H01L33/12 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/3235 ,  H01S5/32391

    摘要： A semiconductor laser formed on an InP substrate to have a hetero structure comprising a plurality of In.sub.1-x Ga.sub.x`As.sub.y P.sub.1-y (0.42y.ltoreq.x.ltoreq.0.5y,0.ltoreq.y.ltoreq.1) layers which are lattice-matched with InP, in which a light emitting layer included in the layers and having a forbidden band width larger than 0.6 eV but smaller than 0.9 eV at room temperature is sandwiched between two InP layers on the InP substrate, and in which there is provided between the light emitting layer and the InP layer grown thereon at least one buffer layer having a forbidden band width larger than the forbidden band width of the light emitting layer but smaller than the forbidden band width of InP. The forbidden band width of the buffer layer at room temperature may be larger than 0.8 eV but smaller than 1.0 eV.

    摘要翻译： 在InP衬底上形成的具有包含多个In1-xGax'AsyP1-y（0.42y≤x≤0.5y，0≤y≤1）的异质结构的半导体激光器，它们是 与InP晶格匹配，其中包含在层中并且具有大于0.6eV但小于0.9eV的禁带宽的发光层在InP衬底上夹在两个InP层之间，其中存在 设置在发光层和在其上生长的至少一个具有比发光层的禁带宽度大的禁带宽度的缓冲层，但小于InP的禁带宽度的InP层。 缓冲层在室温下的禁带宽度可能大于0.8eV但小于1.0eV。

    Distributed feedback semiconductor laser
    8.
    发明授权
    Distributed feedback semiconductor laser 失效
    分布式反馈半导体激光器

    公开(公告)号：US4665527A

    公开(公告)日：1987-05-12

    申请号：US669093

    申请日：1984-11-06

    申请人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    发明人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/12 ,  H01S5/18 ,  H01S5/183 ,  H01S5/22 ,  H01S3/19

    CPC分类号： H01S5/18394 ,  H01S5/0424 ,  H01S5/0425

    摘要： A distributed feedback semiconductor laser, in which a DFB region is formed by a plurality of first semiconductor layers and a plurality of second semiconductor layers larger in energy gap than the first semiconductor layers which are alternately arranged on a substrate with a period for developing a Bragg reflection at a desired wavelength. A p-type region is formed in a part of the DFB region in a manner to provide a plane of junction across the plurality of first semiconductor layers and the plurlaity of second semiconductor layers while an n-type region is formed in the remaining part of the DFB region. The plurality of first semiconductor layers and the plurality of second semiconductor layers are alternately deposited to form the DFB region.

    摘要翻译： 一种分布式反馈半导体激光器，其中DFB区域由多个第一半导体层形成，并且能量间隔大于第一半导体层的多个第二半导体层，该第二半导体层交替布置在具有用于显影布拉格的周期的基板上 在所需波长的反射。 在DFB区域的一部分中，以提供跨越多个第一半导体层的结的平面和第二半导体层的多重性的方式形成p型区域，而在其余部分中形成n型区域 DFB区域。 多个第一半导体层和多个第二半导体层交替沉积以形成DFB区域。

    Distributed feedback semiconductor laser with monitor
    9.
    发明授权
    Distributed feedback semiconductor laser with monitor 失效
    分布式反馈半导体激光器与显示器

    公开(公告)号：US4653058A

    公开(公告)日：1987-03-24

    申请号：US487124

    申请日：1983-04-21

    申请人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    发明人： Shigeyuki Akiba ,  Katsuyuki Utaka ,  Kazuo Sakai ,  Yuichi Matsushima

    IPC分类号： H01S5/00 ,  H01L27/15 ,  H01S5/026 ,  H01S5/12 ,  H01S5/227 ,  H01S3/19

    CPC分类号： H01S5/0264 ,  H01S5/12 ,  H01S5/2275

    摘要： A distributed feedback semiconductor laser with a monitor, which has periodic corrugations on a light emitting layer or an adjoining layer in the direction of travel of light and performs laser oscillation by the injection of a current into said light emitting layer. In accordance with the present invention, a laser region forming said distributed feedback semiconductor laser and a monitor region for detecting the output of said laser region are disposed on the same substrate. A gap between said monitor region and said laser region is filled with a semiconductor of an energy bandgap larger than that of the light emitting layer of said laser region.

    摘要翻译： 一种具有监视器的分布式反馈半导体激光器，其在光的行进方向上的发光层或邻接层上具有周期性波纹，并且通过将电流注入到所述发光层中而进行激光振荡。 根据本发明，形成所述分布式反馈半导体激光器的激光区域和用于检测所述激光区域的输出的监视区域设置在同一基板上。 所述监测区域和所述激光区域之间的间隙填充有比所述激光区域的发光层的能带隙大的能带隙的半导体。

    Butt-jointed built-in semiconductor laser
    10.
    发明授权
    Butt-jointed built-in semiconductor laser 失效
    对接内置半导体激光器

    公开(公告)号：US4589117A

    公开(公告)日：1986-05-13

    申请号：US502589

    申请日：1983-06-09

    申请人： Katsuyuki Utaka ,  Kazuo Sakai ,  Shigeyuki Akiba ,  Yuichi Matsushima

    发明人： Katsuyuki Utaka ,  Kazuo Sakai ,  Shigeyuki Akiba ,  Yuichi Matsushima

    IPC分类号： H01S3/02 ,  H01S3/06 ,  H01S5/00 ,  H01S5/02 ,  H01S5/026 ,  H01S5/10 ,  H01S5/12 ,  H01S5/227 ,  H01S3/19

    CPC分类号： H01S5/1032 ,  H01S5/026 ,  H01S5/227 ,  H01S5/0205 ,  H01S5/12

    摘要： A semiconductor laser, in which active layers are provided on the top surface of the mesa and the remainder surface in a substrate as a first semiconductor layer. Second semiconductor layers are provided on the active layers to such a thickness that the second semiconductor layer may not reach the first semiconductor layer on the mesa. Third semiconductor layers are provided on the second semiconductor layer to such a thickness that the third semiconductor layers may be flush with or higher than the first semiconductor layer on the mesa, so that the first semiconductor layer on the top surface of the mesa is just jointed with the third semiconductor layer on the remainder surface in the substrate.

    摘要翻译： 半导体激光器，其中有源层设置在台面的顶表面上，其余表面设置在基板中作为第一半导体层。 第二半导体层设置在有源层上，使得第二半导体层可能不到达台面上的第一半导体层。 第三半导体层设置在第二半导体层上，使得第三半导体层可以与台面上的第一半导体层齐平或更高，使得台面的顶表面上的第一半导体层刚刚接合 其中衬底中剩余表面上的第三半导体层。