公开(公告)号：US07704765B2

公开(公告)日：2010-04-27

申请号：US11889110

申请日：2007-08-09

申请人： Junya Maruyama ,  Atsuo Isobe ,  Susumu Okazaki ,  Koichiro Tanaka ,  Yoshiaki Yamamoto ,  Koji Dairiki ,  Tomoko Tamura

发明人： Junya Maruyama ,  Atsuo Isobe ,  Susumu Okazaki ,  Koichiro Tanaka ,  Yoshiaki Yamamoto ,  Koji Dairiki ,  Tomoko Tamura

IPC分类号： H01L21/00 ,  H01L21/76

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L24/83 ,  H01L27/1214 ,  H01L27/1218 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2224/83 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/3512 ,  H01L2924/00

摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，该半导体器件的制造方法能够在半导体元件完成之前相位保持剥离层从基板剥离并快速剥离半导体元件。 由于衬底和剥离层之间的热膨胀系数的差异，或者由于剥离层的体积减小，由于将剥离层施加到剥离层上，因此认为剥离层倾向于剥离， 因此通过热处理使剥离层结晶而施加应力。 因此，根据本发明的一个特征，通过在形成剥离层之前形成用于缓解基板和剥离层之间的剥离层上的应力的绝缘膜（缓冲膜），增强了基板和剥离层的粘附性 在基板上。

公开(公告)号：US07692194B2

公开(公告)日：2010-04-06

申请号：US12015362

申请日：2008-01-16

申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Hiromichi Godo

发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Hiromichi Godo

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78621 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78618 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device having a novel structure by which the operating characteristics and reliability are improved and a manufacturing method thereof. An island-shaped semiconductor layer provided over a substrate, including a channel formation region provided between a pair of impurity regions; a first insulating layer provided so as to be in contact with the side surface of the semiconductor layer; a gate electrode provided over the channel formation region so as to get across the semiconductor layer; and a second insulating layer provided between the channel formation region and the gate electrode are included. The semiconductor layer is locally thinned, the channel formation region is provided in the thinned region, and the second insulating layer covers the first insulating layer provided on the side surface of the semiconductor layer at least in the region which overlaps with the gate electrode.

摘要翻译： 具有改善其操作特性和可靠性的新颖结构的半导体器件及其制造方法。 一种岛状半导体层，设置在衬底上，包括设置在一对杂质区之间的沟道形成区; 设置成与半导体层的侧表面接触的第一绝缘层; 栅电极，设置在所述沟道形成区上方以穿过所述半导体层; 并且包括设置在沟道形成区域和栅电极之间的第二绝缘层。 半导体层被局部变薄，沟道形成区域设置在减薄区域中，并且第二绝缘层至少在与栅电极重叠的区域中覆盖设置在半导体层的侧表面上的第一绝缘层。

公开(公告)号：US20090014799A1

公开(公告)日：2009-01-15

申请号：US12216567

申请日：2008-07-08

申请人： Atsuo Isobe

发明人： Atsuo Isobe

IPC分类号： H01L27/08 ,  H01L21/30

CPC分类号： H01L27/088 ,  H01L21/823807 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/1203 ,  H01L29/78603

摘要： A semiconductor device and a method for manufacturing a semiconductor device are provided. A semiconductor device comprises a first single-crystal semiconductor layer including a first channel formation region and a first impurity region over a substrate having an insulating surface, a first gate insulating layer over the first single-crystal semiconductor layer, a gate electrode over the first gate insulating layer, a first interlayer insulating layer over the first gate insulating layer, a second gate insulating layer over the gate electrode and the first interlayer insulating layer, and a second single-crystal semiconductor layer including a second channel formation region and a second impurity region over the second gate insulating layer. The first channel formation region, the gate electrode, and the second channel formation region are overlapped with each other.

摘要翻译： 提供半导体器件和半导体器件的制造方法。 半导体器件包括：第一单晶半导体层，包括在具有绝缘表面的衬底上的第一沟道形成区和第一杂质区;在第一单晶半导体层上方的第一栅绝缘层，第一单晶半导体层上的栅电极 栅极绝缘层，第一栅极绝缘层上的第一层间绝缘层，栅极电极和第一层间绝缘层之上的第二栅极绝缘层，以及包括第二沟道形成区域和第二杂质的第二单晶半导体层 区域。 第一沟道形成区域，栅极电极和第二沟道形成区域彼此重叠。

公开(公告)号：US07449376B2

公开(公告)日：2008-11-11

申请号：US11120992

申请日：2005-05-04

申请人： Atsuo Isobe ,  Tatsuya Arao

发明人： Atsuo Isobe ,  Tatsuya Arao

IPC分类号： H01L21/84

CPC分类号： H01L21/02672 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78678

摘要： An object of the present invention is to form a channel formation region, or a TFT formation region, using one crystal aggregate (domain) by controlling crystal location and size, thus suppressing TFT variations. According to the present invention, laser irradiation is performed selectively on an amorphous silicon film in the periphery of a channel formation region, or the periphery of a TFT formation region containing a channel formation region, source and drain region, and the like. Each TFT formation region is isolated, a metallic element for promoting crystallization (typically Ni) is added, and heat treatment is performed, thus making it possible to arbitrarily determine the locations of crystal aggregates (domains). It becomes possible to suppress variations in the TFTs by arbitrarily controlling the crystal aggregate (domain) locations.

摘要翻译： 本发明的目的是通过控制晶体位置和尺寸来形成使用一个晶体聚集体（畴）的沟道形成区域或TFT形成区域，从而抑制TFT变化。 根据本发明，在沟道形成区域的外围的非晶硅膜或包含沟道形成区域，源极和漏极区域的TFT形成区域的周边上的选择性地进行激光照射。 每个TFT形成区被隔离，加入用于促进结晶的金属元素（通常为Ni），并且进行热处理，从而可以任意地确定晶体聚集体（畴）的位置。 可以通过任意地控制晶体聚集体（畴）位置来抑制TFT的变化。

公开(公告)号：US20080272376A1

公开(公告)日：2008-11-06

申请号：US12170588

申请日：2008-07-10

申请人： Tatsuya Arao ,  Atsuo Isobe ,  Toru Takayama

发明人： Tatsuya Arao ,  Atsuo Isobe ,  Toru Takayama

IPC分类号： H01L33/00

CPC分类号： G02F1/133305 ,  G02F1/1362 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/66742 ,  H01L29/78603

摘要： In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected with the TFT, and a storage capacitor is constituted by the substrate (11) having the metal surface, the insulating film (12), and the wiring line (21). As the insulating film is thinner, and as the area of a region where the insulating film and the wiring line lie in contact is larger, the storage capacitor is endowed with a larger capacity.

摘要翻译： 在具有金属表面的基板的半导体器件中，形成在具有金属表面的基板上的绝缘膜和形成在绝缘膜上的像素单元; 像素单元包括TFT和与TFT连接的布线，并且存储电容器由具有金属表面的基板（11），绝缘膜（12）和布线（21）构成。 由于绝缘膜更薄，并且随着绝缘膜和布线接触的区域的面积较大，所以存储电容器具有较大的容量。

公开(公告)号：US20080179599A1

公开(公告)日：2008-07-31

申请号：US11876429

申请日：2007-10-22

申请人： Tetsuji YAMAGUCHI ,  Atsuo Isobe ,  Satoru Saito

发明人： Tetsuji YAMAGUCHI ,  Atsuo Isobe ,  Satoru Saito

IPC分类号： H01L27/14

CPC分类号： H01L27/1259 ,  H01L27/1214

摘要： A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer. In the second annealing, a base metal film absorbs and accumulates heat of the laser irradiation, and a semiconductor layer is supplied with beat of the base metal film in addition to heat of the laser irradiation, thereby enhancing efficiency of the silicide reaction in the source and drain regions.

摘要翻译： 对薄膜集成电路进行自对准处理，而不用担心对玻璃基板的损坏，因此可以实现电路的高速操作。 在玻璃基板上形成贱金属膜，氧化物和基底绝缘膜。 在基底绝缘膜上形成具有侧壁的TFT，并且形成覆盖TFT的金属膜。 在不会引起基板收缩的温度下由RTA等进行退火，在源极和漏极区域形成高阻金属硅化物层。 在除去未反应的金属膜之后，对第二次退火进行激光照射; 因此进行硅化物反应，高阻金属硅化物层变成低电阻金属硅化物层。 在第二退火中，贱金属膜吸收并累积激光照射的热量，并且除了激光照射的热量之外，还向半导体层供给贱金属膜的节拍，从而提高源的硅化物反应的效率 和漏区。

公开(公告)号：US07312473B2

公开(公告)日：2007-12-25

申请号：US10329993

申请日：2002-12-27

申请人： Jun Koyama ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

发明人： Jun Koyama ,  Atsuo Isobe ,  Hiroshi Shibata ,  Shunpei Yamazaki

IPC分类号： H01L29/00 ,  H01L29/94 ,  H01L33/00

CPC分类号： H01L29/78696 ,  H01L27/1296 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78675

摘要： In display devices using thin film transistors, a graphoepitaxy is used for a semiconductor layer crystallizing process. Thus, a display device in which crystallinity is improved, a variation in characteristics of thin film transistors is reduced, display nonuniformity is less, and a display quality is superior is provided. Steps are formed on a substrate in advance and an amorphous silicon film is formed thereon, and then laser crystallization is conducted in a direction perpendicular to the steps.

摘要翻译： 在使用薄膜晶体管的显示装置中，使用石墨刻蚀技术进行半导体层结晶工艺。 因此，结晶度提高的显示装置，薄膜​​晶体管的特性变化减小，显示不均匀性低，显示质量优异。 预先在基板上形成台阶，在其上形成非晶硅膜，然后在与台阶垂直的方向上进行激光结晶。

公开(公告)号：US07288480B2

公开(公告)日：2007-10-30

申请号：US11110918

申请日：2005-04-21

申请人： Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

发明人： Tetsuji Yamaguchi ,  Atsuo Isobe ,  Satoru Saito

IPC分类号： H01L21/44

CPC分类号： H01L27/1259 ,  H01L27/1214

摘要： A salicide process is conducted to a thin film integrated circuit without worrying about damages to a glass substrate, and thus, high-speed operation of a circuit can be achieved. A base metal film, an oxide and a base insulating film are formed over a glass substrate. A TFT having a sidewall is formed over the base insulating film, and a metal film is formed to cover the TFT. Annealing is conducted by RTA or the like at such a temperature that does not cause shrinkage of the substrate, and a high-resistant metal silicide layer is formed in source and drain regions. After removing an unreacted metal film, laser irradiation is conducted for the second annealing; therefore a silicide reaction proceeds and the high-resistant metal silicide layer becomes a low-resistant metal silicide layer. In the second annealing, a base metal film absorbs and accumulates heat of the laser irradiation, and a semiconductor layer is supplied with heat of the base metal film in addition to heat of the laser irradiation, thereby enhancing efficiency of the silicide reaction in the source and drain regions.

摘要翻译： 对薄膜集成电路进行自对准处理，而不用担心对玻璃基板的损坏，因此可以实现电路的高速操作。 在玻璃基板上形成贱金属膜，氧化物和基底绝缘膜。 在基底绝缘膜上形成具有侧壁的TFT，并且形成覆盖TFT的金属膜。 在不会引起基板收缩的温度下由RTA等进行退火，在源极和漏极区域形成高阻金属硅化物层。 在除去未反应的金属膜之后，对第二次退火进行激光照射; 因此进行硅化物反应，高阻金属硅化物层变成低电阻金属硅化物层。 在第二退火中，贱金属膜吸收并累积激光照射的热量，并且除了激光照射的热量之外，还向半导体层供应贱金属膜的热量，从而提高源的硅化物反应的效率 和漏区。

公开(公告)号：US07282380B2

公开(公告)日：2007-10-16

申请号：US11079262

申请日：2005-03-15

申请人： Junya Maruyama ,  Atsuo Isobe ,  Susumu Okazaki ,  Koichiro Tanaka ,  Yoshiaki Yamamoto ,  Koji Dairiki ,  Tomoko Tamura

发明人： Junya Maruyama ,  Atsuo Isobe ,  Susumu Okazaki ,  Koichiro Tanaka ,  Yoshiaki Yamamoto ,  Koji Dairiki ,  Tomoko Tamura

IPC分类号： H01L21/00 ,  H01L21/76

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L24/83 ,  H01L27/1214 ,  H01L27/1218 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2224/83 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15787 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/3512 ,  H01L2924/00

摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.

公开(公告)号：US20070120127A1

公开(公告)日：2007-05-31

申请号：US11698864

申请日：2007-01-29

申请人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

发明人： Atsuo Isobe ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Shunpei Yamazaki ,  Mai Akiba

IPC分类号： H01L29/76 ,  H01L29/04 ,  H01L29/06

CPC分类号： H01L21/02683 ,  H01L21/2022 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696

摘要： It is a problem to provide a semiconductor device production system using a laser crystallization method capable of preventing grain boundaries from forming in a TFT channel region and further preventing conspicuous lowering in TFT mobility due to grain boundaries, on-current decrease or off-current increase. An insulation film is formed on a substrate, and a semiconductor film is formed on the insulation film. Due to this, preferentially formed is a region in the semiconductor film to be concentratedly applied by stress during crystallization with laser light. Specifically, a stripe-formed or rectangular concavo-convex is formed on the semiconductor film. Continuous-oscillation laser light is irradiated along the striped concavo-convex or along a direction of a longer or shorter axis of rectangle.

摘要翻译： 提供一种使用能够防止在TFT沟道区域中形成晶界的激光晶体化方法的半导体器件制造系统的问题，并且进一步防止由于晶界引起的TFT迁移率的明显降低，导通电流降低或截止电流增加 。 在基板上形成绝缘膜，在绝缘膜上形成半导体膜。 由此，优选形成半导体膜中通过激光在结晶期间通过应力集中施加的区域。 具体地，在半导体膜上形成条状或矩形凹凸。 连续振荡激光沿着条纹凹凸或长轴或短轴方向照射。