Soldering machine
    72.
    发明申请
    Soldering machine 审中-公开

    公开(公告)号:US20060124692A1

    公开(公告)日:2006-06-15

    申请号:US11349175

    申请日:2006-02-08

    IPC分类号: B23K1/08

    CPC分类号: B23K3/0653 B23K2101/40

    摘要: A soldering machine includes a solder vessel, an electromagnetic pump, and a nozzle. The solder vessel stores molten solder, and the electromagnetic pump moves the solder by generating electromagnetic force. The electromagnetic pump is submerged below the liquid surface of the solder. The nozzle ejects the solder in the solder vessel onto an object, such as a printed circuit board. Accordingly, the generated heat from the electromagnetic pump is conducted to the solder in the solder vessel, and the solder can be heated to a higher temperature than in the conventional soldering machine.

    Semiconductor device with shallow trench isolation and its manufacture method
    73.
    发明申请
    Semiconductor device with shallow trench isolation and its manufacture method 有权
    具有浅沟槽隔离的半导体器件及其制造方法

    公开(公告)号:US20050194646A1

    公开(公告)日:2005-09-08

    申请号:US10882260

    申请日:2004-07-02

    摘要: A semiconductor device manufacturing method includes the steps of: (a) forming a stopper layer for chemical mechanical polishing on a surface of a semiconductor substrate; (b) forming an element isolation trench in the stopper layer and the semiconductor substrate; (c) depositing a nitride film covering an inner surface of the trench; (d) depositing a first oxide film through high density plasma CVD, the first oxide film burying at least a lower portion of the trench deposited with the nitride film; (e) washing out the first oxide film on a side wall of the trench by dilute hydrofluoric acid; (f) depositing a second oxide film by high density plasma CVD, the second oxide film burying the trench after the washing-out; and (g) removing the oxide films on the stopper layer by chemical mechanical polishing.

    摘要翻译: 半导体器件制造方法包括以下步骤:(a)在半导体衬底的表面上形成用于化学机械抛光的阻挡层; (b)在所述阻挡层和半导体衬底中形成元件隔离沟槽; (c)沉积覆盖所述沟槽的内表面的氮化物膜; (d)通过高密度等离子体CVD沉积第一氧化物膜,第一氧化膜埋入沉积有氮化物膜的沟槽的至少下部; (e)通过稀氢氟酸在沟槽的侧壁上洗出第一氧化膜; (f)通过高密度等离子体CVD沉积第二氧化膜,第二氧化膜在洗出之后埋入沟槽; 和(g)通过化学机械抛光去除阻挡层上的氧化物膜。

    Nitride semiconductor device and method for manufacturing the same
    76.
    发明授权
    Nitride semiconductor device and method for manufacturing the same 有权
    氮化物半导体器件及其制造方法

    公开(公告)号:US06693303B2

    公开(公告)日:2004-02-17

    申请号:US10166048

    申请日:2002-06-11

    IPC分类号: H01L2713

    摘要: A nitride semiconductor device is composed of Group III nitride semiconductors. The device includes an active layer, and a barrier layer made from a predetermined material and provided adjacent to the active layer. The barrier layer has a greater band-gap than that of the active layer. The device also includes a barrier portion formed of the predetermined material for surrounding a threading dislocation in the active layer. The barrier portion has a vertex. The device also includes a semiconductor layer having an impurity concentration ranging from 1E16/cc to 1E17/cc in which the vertex is placed.

    摘要翻译: 氮化物半导体器件由III族氮化物半导体组成。 该器件包括有源层和由预定材料制成并邻近有源层提供的阻挡层。 阻挡层具有比有源层更大的带隙。 该装置还包括由预定材料形成的阻挡部分,用于围绕有源层中的穿透位错。 阻挡部分具有顶点。 该器件还包括其中放置顶点的​​杂质浓度范围为1E16 / cc至1E17 / cc的半导体层。

    High voltage power supply circuit
    77.
    发明授权
    High voltage power supply circuit 失效
    高压电源电路

    公开(公告)号:US6104174A

    公开(公告)日:2000-08-15

    申请号:US299556

    申请日:1999-04-21

    CPC分类号: H04N3/18 H04N3/185

    摘要: A speed-up circuit 10 is connected to a detection line 6 for feeding back the high voltage detection value of a high voltage detection circuit 5 to a high voltage stabilizing circuit 1. When a power supply switch is turned on, since a PNP transistor 12 of the speed-up circuit 10 is turned on, a resistor 11 is connected to the detection line 6, so that the high voltage detection value is reduced forcedly. Accordingly, the high voltage stabilizing circuit 1 increases the peak value of a flyback pulse generated by a resonance-type power supply circuit 2 to output higher high voltage thereby to shorten the rising time of the high voltage output supplied to the anode of a CRT. After the lapse of the predetermined time from the turning-on of the power supply switch, since the terminal voltage of a capacitor 13 having been charged through a resistor 14 exceeds almost the voltage at a point A, the PNP transistor 12 is turned off, so that the resistor 11 is separeted from the detection line. Accordingly, the responsibility of the flyback pulse is prevented from being degraded at the time of the abrupt change of the load of the CRT.

    摘要翻译: 加速电路10连接到检测线6,用于将高电压检测电路5的高电压检测值反馈给高电压稳定电路1.当电源开关导通时,由于PNP晶体管12 加速电路10接通,电阻器11与检测线6连接,使得高电压检测值被强制地减小。 因此,高电压稳定电路1增加由谐振型电源电路2产生的回扫脉冲的峰值,以输出较高的高电压,从而缩短供给CRT的阳极的高电压输出的上升时间。 在从供电开关接通经过预定时间之后,由于已经通过电阻器14充电的电容器13的端子电压几乎超过了点A处的电压,所以PNP晶体管12截止, 使得电阻器11从检测线分离。 因此,在CRT的负载的突然变化时防止回扫脉冲的作用降低。

    Radiation clinical thermometer
    78.
    发明授权
    Radiation clinical thermometer 失效
    辐射体温计

    公开(公告)号:US5487607A

    公开(公告)日:1996-01-30

    申请号:US176459

    申请日:1993-12-29

    摘要: A radiation clinical thermometer includes a moveable probe which actuates a start switch when inserted into a patients ear. The radiation clinical thermometer also includes a probe cover device for dismounting a probe cover from the probe. The probe cover device is operatively connected in circuit with the start switch to only allow operation of the thermometer when the probe cover device is in a position indicating that a probe cover is mounted on the probe. The thermometer also includes time delay devices which preclude operating the thermometer unless the start switch or the probe cover detection device is in a predetermined position for a predetermined amount of time.

    摘要翻译: 辐射体温计包括可移动的探头,当可插入患者的耳朵时,该探头致动起动开关。 辐射体温计还包括用于从探头上拆下探头盖的探针盖装置。 探针盖装置与启动开关可操作地连接在电路中,以便当探针盖装置处于指示探针盖安装在探针上的位置时才允许温度计的操作。 温度计还包括排除操作温度计的时间延迟装置,除非启动开关或探头盖检测装置处于预定位置预定的时间量。

    Test sample color comparison device

    公开(公告)号:US5011290A

    公开(公告)日:1991-04-30

    申请号:US567699

    申请日:1990-08-14

    摘要: A test sample color comparison device is disclosed which has a casing unit with an insertion slot for inserting a color test sample therein, and a display section for displaying the color test sample adjacent at least one of a plurality of reference color shades, as the reference color shades are successively moved into position adjacent the color test sample by a manipulation wheel. When an operator determines that a reference color shade adjacent the test sample corresponds in color to the color of the test sample, he pushes a switch to cause a readout of stored information corresponding to the reference color shade then adjacent the test sample. Readout of the stored information is based on a bit pattern set by a plurality of converter switches which are turned on and off in different patterns which correspond to the different color shades as the reference color shades are moved into position by the manipulation wheel. An uneven pattern code section moves in association with the manipulatable wheel and actuates the converter switches. A preferred uneven pattern code section is arranged so that all of the converter switches are actuated roughly equally during a full rotation of the manipulatable wheel, and so that only one of the converter switches is switched on or off during incremental movement of the manipulable wheel.

    Magnetic head with a controlled gap width
    80.
    发明授权
    Magnetic head with a controlled gap width 失效
    具有可控间隙宽度的磁头

    公开(公告)号:US4959741A

    公开(公告)日:1990-09-25

    申请号:US155947

    申请日:1988-02-16

    IPC分类号: G11B5/187 G11B5/255

    摘要: A magnetic recording playback head and a method for producing the same having an improved wear resistance and resistance to chipping as well as an improved production rate. The head is formed from a pair of magnetic cores joined through a gap-forming film. The lateral sides of the gap are flat, except for the surface repair to contact the tape, which have a width equal to the track width. The flat sides are coated with a nonmagnetic thin hard film of a material such as alumina or titanium nitride.