摘要:
A lithographic apparatus comprising an array of individually controllable elements that modulates a beam of radiation and a projection system that projects the modulated beam onto the substrate. The individually controllable elements are provided with a compensation feature that is arranged to provide compensation radiation that substantially or at least partially cancels out unwanted radiation, such that the unwanted radiation is not projected by the projection system onto the substrate.
摘要:
A method of lithography is disclosed that includes conditioning a radiation beam using an illumination system of a lithographic apparatus, imparting the radiation beam with a pattern in its cross-section, and projecting the patterned beam of radiation as an exposure field onto a substrate, wherein a periodic interference pattern is present in the exposure field, and relative motion is established between the substrate and a component in the illumination system, such that the periodic interference pattern is displaced in a direction which is not parallel to a direction of repetition of the periodic interference pattern.
摘要:
A system and method are used to direct a radiation beam to illuminate non-perpendicularly a patterning array of individually controllable elements used for patterning the radiation beam. The individually controllable elements can change a telecentricity of the radiation beam. Projection of the radiation beam onto the individually controllable elements can be by a concave mirror or use a folding mirror placed in an object field of the individually controllable elements. Alternatively, the individually controllable elements can change the optical axis of the radiation beam.
摘要:
According to one embodiment, a method for aligning a first alignment marker with respect to a second alignment marker, a lens being positioned in between the markers, includes providing an alignment beam and imaging the first alignment marker on the second alignment marker with the alignment beam through the lens. A lens interferometer is provided as a measurement device arranged to measure a relative position of at least one of the first and second alignment markers. The method further includes measuring the relative position and aligning the position of at least one of the first and second alignment markers based on the measured relative position.
摘要:
A method of determining aberration of a projection system of a lithographic includes projecting a reference test pattern, projecting a second test pattern, measuring relative displacements between items in the resulting images of said reference test pattern and said second test pattern, and using said measurements to determine information on the aberration of the projection system, wherein a filter is used when imaging the second test pattern to select particular radiation paths though the projection system, and wherein the measuring is performed for a plurality of images of the second test pattern obtained at planes displaced along the optical axis relative to each other.
摘要:
A method and system for determining specific pixel modulation states of a spatial light modulator (SLM) to print a desired pattern on a substrate are disclosed. The method includes selecting at least one super-pixel in an object plane of the desired pattern, the super-pixel being formed of at least two pixels. At least one edge of the desired pattern crosses a boundary within the super-pixel, the at least one edge being defined by specific slope and position parameters relative to the super-pixel. The method also includes (i) forming an interpolation table to tabulate pre-calculated pixel modulation states and (ii) determining the specific pixel modulation states for each of the pixels in accordance with the interpolation table. Disclosed also are a method and system for providing a spatial light modulator (SLM). The SLM includes a plurality of mirrors structured to form groups of super-pixels. Each super-pixel (i) includes two or more mirrors from the plurality of mirrors and (ii) is configured to switch only one pixel of light. Each of the two or more mirrors can be separately actuated.
摘要:
A lithographic apparatus includes a radiation system, a patterning device, and a projection system. The patterning device patterns a beam of radiation from the radiation system. The projection system projects the patterned beam onto a target portion of a substrate. The projection system comprising a pupil positioned at a pupil plane of the projection system and an array of lenses positioned at an image plane of the projection system. The patterning device is conjugate to the array of lenses and the pupil is conjugate to the substrate.
摘要:
In a mask pattern for a device such as a DRAM including a nearly regular array of isolated features, assist features are positioned so as to make the array more symmetric. Where the isolated features are positioned at most but not all of the points of a regular unit cell, the assist features may be positioned at the points of the unit cell not occupied by the isolated features. The isolated features may represent contact holes.
摘要:
An alignment marker for use in calibration of a lithographic projection apparatus has focus sensitive parts and dose sensitive parts, each of which includes an area having a plurality of dots against a contrasting background forming part of a periodic line structure.
摘要:
A lithographic method of determining a sensitivity of a property of a pattern feature to change in optical aberrations of a lithographic apparatus used to provide that pattern feature. The method includes controlling a configuration of the lithographic apparatus to establish a first aberration state, forming a first image of the pattern feature with that lithographic apparatus when the lithographic apparatus is in that first aberration state, measuring a property of the image, controlling a configuration of the lithographic apparatus to establish a second, different, aberration state, forming an image of the same pattern feature with that lithographic apparatus when the lithographic apparatus is in that second aberration state, measuring a same property of the image, and using the measurements to determine the sensitivity of the property of the pattern feature to changes in the aberration state.