公开(公告)号：US20070171702A1

公开(公告)日：2007-07-26

申请号：US11339189

申请日：2006-01-25

申请人： Xizeng Shi ,  Po-Kang Wang ,  Hsu Yang

发明人： Xizeng Shi ,  Po-Kang Wang ,  Hsu Yang

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： An MRAM array has a plurality of MRAM devices that are arranged in rows and columns with segmented word lines. A magnetic biasing field is coupled to each of the MRAM devices. The MRAM devices are programmed by providing a bidirectional bit line current to a selected bit line of the plurality of bit lines and a word line current pulse to one word line segment of one row of word line segments by discharging coupled word line segments. The field biasing device may be permanent magnetic layers or write biasing lines in proximity to the fixed magnetic layer of each of the MRAM and has a magnetic orientation equivalent to the magnetic orientation of a word line segment magnetic field generated by the word line current pulse.

摘要翻译： MRAM阵列具有多个以分段字线排列成行和列的MRAM器件。 磁偏置场耦合到每个MRAM器件。 MRAM器件通过向多个位线的选定位线提供双向位线电流，并通过对耦合的字线段进行放电而将字线电流脉冲提供给一行字线段的一个字线段。 励磁偏置装置可以是永久磁性层或者写入偏置线，靠近每个MRAM的固定磁性层，并且具有与由字线电流脉冲产生的字线段磁场的磁性取向相当的磁性取向。

公开(公告)号：US07224628B2

公开(公告)日：2007-05-29

申请号：US11486192

申请日：2006-07-13

申请人： Hsu Kai Yang ,  Xi Zeng Shi ,  Po-Kang Wang ,  Bruce Yang

发明人： Hsu Kai Yang ,  Xi Zeng Shi ,  Po-Kang Wang ,  Bruce Yang

IPC分类号： G11C7/00

CPC分类号： G11C14/0081 ,  G11C11/1659 ,  G11C11/1675 ,  G11C29/02 ,  G11C29/08 ,  G11C29/50

摘要： Magnetic Random Access Memory (MRAM) can be programmed and read as fast as Static Random Access Memory (SRAM) and has the non-volatile characteristics of electrically eraseable programmable read only memory (EEPROM), FLASH EEPROM or one-time-programmable (OTP) EPROM. Due to the randomness of manufacturing process, the magnetic tunnel junctions (MTJ) in MRAM cells will require different row and column current combinations to program and not to disturb the other cells. Based on adaptive current sources for programming, this disclosure teaches methods, designs, test algorithms and manufacturing flows for generating EEPROM, FLASH EEPROM or OTP EPROM like memories from MRAM.

摘要翻译： 磁性随机存取存储器（MRAM）可以与静态随机存取存储器（SRAM）一样快速编程和读取，并且具有电可擦除可编程只读存储器（EEPROM），闪存EEPROM或一次可编程（OTP）的非易失性特性 ）EPROM。 由于制造过程的随机性，MRAM单元中的磁隧道结（MTJ）将需要不同的行和列电流组合来编程，而不会干扰其他单元。 基于用于编程的自适应电流源，本公开教导了用于从MRAM生成EEPROM，FLASH EEPROM或OTP EPROM的存储器的方法，设计，测试算法和制造流程。

公开(公告)号：US07193816B2

公开(公告)日：2007-03-20

申请号：US10871040

申请日：2004-06-21

申请人： Yoshitaka Sasaki ,  Hiroyuki Itoh ,  Dong-Hong Li ,  Po-Kang Wang ,  Lijie Guan

发明人： Yoshitaka Sasaki ,  Hiroyuki Itoh ,  Dong-Hong Li ,  Po-Kang Wang ,  Lijie Guan

IPC分类号： G11B5/147

CPC分类号： G11B5/3136 ,  G11B5/1278 ,  G11B5/1872 ,  G11B5/3106 ,  G11B5/3143 ,  G11B5/3163

摘要： A magnetic head comprises a pole layer, a gap layer, a shield layer, a nonmagnetic layer, and a coil. The shield layer incorporates: a first layer disposed on the gap layer; a second layer disposed on the first layer; a two-layered coupling layer disposed on a region of the pole layer where an opening of the gap layer is formed; and a third layer disposed to couple the second layer to the coupling layer. The first layer defines throat height TH. The nonmagnetic layer is disposed on a side of the first layer. The coil is disposed on the nonmagnetic layer on a side of the second layer.

摘要翻译： 磁头包括极层，间隙层，屏蔽层，非磁性层和线圈。 屏蔽层包括：设置在间隙层上的第一层; 设置在所述第一层上的第二层; 设置在形成间隙层的开口的极层的区域上的双层结合层; 以及设置成将所述第二层耦合到所述耦合层的第三层。 第一层定义喉咙高度TH。 非磁性层设置在第一层的一侧。 线圈设置在第二层一侧的非磁性层上。

公开(公告)号：US07180769B2

公开(公告)日：2007-02-20

申请号：US11103977

申请日：2005-04-12

申请人： Po-Kang Wang ,  Yin Rong ,  Hsu Kai Yang ,  Xizeng Shi

发明人： Po-Kang Wang ,  Yin Rong ,  Hsu Kai Yang ,  Xizeng Shi

IPC分类号： G11C11/00

CPC分类号： G11C8/08 ,  G11C11/15

摘要： The word line segment select transistor of a segmented word line array is placed on the word line current source side. This eliminates many undesirable effects currently associated with segmented word line MRAM arrays.

摘要翻译： 分段字线阵列的字线选择晶体管被放置在字线电流源侧。 这消除了目前与分段字线MRAM阵列相关联的许多不期望的影响。

公开(公告)号：US20060196039A1

公开(公告)日：2006-09-07

申请号：US11074244

申请日：2005-03-04

申请人： Masanori Sakai ,  Kunliang Zhang ,  Kenichi Takano ,  Chyu-Jiuh Torng ,  Yunfei Li ,  Po-Kang Wang

发明人： Masanori Sakai ,  Kunliang Zhang ,  Kenichi Takano ,  Chyu-Jiuh Torng ,  Yunfei Li ,  Po-Kang Wang

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49048

摘要： A hard bias (HB) structure for biasing a free layer in a MR sensor within a magnetic read head is comprised of a main biasing layer with a large negative magnetostriction (λS) value. Compressive stress in the device after lapping induces a strong in-plane anisotropy that effectively provides a longitudinal bias to stabilize the sensor. The main biasing layer is formed between two FM layers, and at least one AFM layer is disposed above the upper FM layer or below the lower FM layer. Additionally, there may be a Ta/Ni or Ta/NiFe seed layer as the bottom layer in the HB structure. Compared with a conventional abutted junction exchange bias design, the HB structure described herein results in higher output amplitude under similar asymmetry sigma and significantly decreases sidelobe occurrence. Furthermore, smaller MRWu with a similar track width is achieved since the main biasing layer acts as a side shield.

摘要翻译： 用于偏置磁读头内的MR传感器中的自由层的硬偏置（HB）结构包括具有大的负磁致伸缩（λS S S S S）值的主偏置层。 研磨后装置中的压缩应力引起强的面内各向异性，其有效地提供纵向偏压以稳定传感器。 主偏置层形成在两个FM层之间，并且至少一个AFM层设置在上FM层上方或下FM层的下方。 另外，可以存在作为HB结构中的底层的Ta / Ni或Ta / NiFe种子层。 与传统的邻接结交换偏置设计相比，本文所述的HB结构在类似的不对称西格玛下产生更高的输出幅度，并显着降低旁瓣发生。 此外，由于主偏置层用作侧屏蔽，所以实现了具有相似轨道宽度的较小MRWu。

公开(公告)号：US20050280937A1

公开(公告)日：2005-12-22

申请号：US10871040

申请日：2004-06-21

申请人： Yoshitaka Sasaki ,  Hiroyuki Itoh ,  Dong-Hong Li ,  Po-Kang Wang ,  Lijie Guan

发明人： Yoshitaka Sasaki ,  Hiroyuki Itoh ,  Dong-Hong Li ,  Po-Kang Wang ,  Lijie Guan

IPC分类号： G11B5/127 ,  G11B5/147 ,  G11B5/187 ,  G11B5/31

CPC分类号： G11B5/3136 ,  G11B5/1278 ,  G11B5/1872 ,  G11B5/3106 ,  G11B5/3143 ,  G11B5/3163

摘要： A magnetic head comprises a pole layer, a gap layer, a shield layer, a nonmagnetic layer, and a coil. The shield layer incorporates: a first layer disposed on the gap layer; a second layer disposed on the first layer; a two layered coupling layer disposed on a region of the pole layer where an opening of the gap layer is formed; and a third layer disposed to couple the second layer to the coupling layer. The first layer defines throat height TH. The nonmagnetic layer is disposed on a side of the first layer. The coil is disposed on the nonmagnetic layer on a side of the second layer.

摘要翻译： 磁头包括极层，间隙层，屏蔽层，非磁性层和线圈。 屏蔽层包括：设置在间隙层上的第一层; 设置在所述第一层上的第二层; 设置在形成间隙层的开口的极层的区域上的双层结合层; 以及设置成将所述第二层耦合到所述耦合层的第三层。 第一层定义喉咙高度TH。 非磁性层设置在第一层的一侧。 线圈设置在第二层一侧的非磁性层上。

公开(公告)号：US20050219895A1

公开(公告)日：2005-10-06

申请号：US10818581

申请日：2004-04-06

申请人： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

发明人： Yimin Guo ,  Po-Kang Wang ,  Xizeng Shi ,  Tai Min

IPC分类号： H01L27/105 ,  G11C11/16 ,  H01L21/8246 ,  H01L43/08 ,  G11C11/00 ,  G11C11/15

CPC分类号： G11C11/16

摘要： An MTJ MRAM cell element, whose free layer has a shape induced magnetic anisotropy, is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity current carrying layer and a soft adjacent magnetic layer (SAL). During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer to produce two magnetization states of greater and lesser stability. During switching, the layer is first placed in the less stable state by a word line current, so that a small bit line current can switch its magnetization direction. After switching, the state reverts to its more stable form as a result of magnetostatic interaction with the SAL, which prevents it from being accidentally rewritten when it is not actually selected and also provides stability against thermal agitation.

摘要翻译： 在正交字和位线之间形成MTJ MRAM单元元件，其自由层具有诱导磁各向异性的形状。 位线是包括高导电性载流层和软相邻磁性层（SAL）的复合线。 在操作期间，软磁层集中了电流的磁场，并且由于其接近于自由层，其与自由层磁耦合以产生更大和更小稳定性的两种磁化状态。 在切换期间，该层首先通过字线电流处于较不稳定的状态，使得小的位线电流可以切换其磁化方向。 在切换之后，由于与SAL的静磁相互作用，状态恢复到更稳定的形式，这防止了当它不被实际选择时被意外重写，并且还提供了抗热搅动的稳定性。

公开(公告)号：US06943995B2

公开(公告)日：2005-09-13

申请号：US10616724

申请日：2003-07-10

申请人： Tai Min ,  Po-Kang Wang ,  Moris Musa Dovek

发明人： Tai Min ,  Po-Kang Wang ,  Moris Musa Dovek

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： To form a spin valve device, start by forming a gap layer. Form a buffer layer with a layer of refractory material on the buffer layer. Form patterned underlayers including a magnetic material for providing trackwidth and longitudinal bias on the buffer layer comprising either a lower antiferromagnetic layer stacked with a ferromagnetic layer or a Cr layer stacked with a permanent magnetic layer. Form an inwardly tapered depression in the patterned underlayers down to the buffer layer by either ion milling through a mask or a stencil lift off technique. Form layers covering the patterned underlayers that cover the inwardly tapered depression. Form free, pinned, spacer and antiferromagnetic layers. Form conductors either on a surface of the antiferromagnetic layer aside from the depression or between the buffer layer and the patterned underlayers.

摘要翻译： 为了形成自旋阀装置，通过形成间隙层开始。 在缓冲层上形成具有耐火材料层的缓冲层。 包括用于在缓冲层上提供轨道宽度和纵向偏压的磁性材料的形式图案化底层，包括堆叠有铁磁层的下反铁磁层或与永久磁性层堆叠的Cr层。 通过离子铣削通过掩模或模板剥离技术，在图案化的底层中形成向下渐变的凹陷，直到缓冲层。 覆盖图案化底层的覆盖向内倾斜的凹陷的成形层。 无形，固定，间隔和反铁磁层。 在反铁磁层的表面上，在凹陷之外或缓冲层和图案化的底层之间形成导体。

公开(公告)号：US20050048674A1

公开(公告)日：2005-03-03

申请号：US10781479

申请日：2004-02-17

申请人： Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

发明人： Xizeng Shi ,  Po-Kang Wang ,  Yimin Guo ,  Tai Min

IPC分类号： H01F20060101 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08

摘要： A method and system for providing a magnetic element and a magnetic memory using the magnetic element are disclosed. The magnetic memory includes a plurality of magnetic elements. The method and system include providing a plurality of layers and a passivation layer for each of the plurality of magnetic elements. A portion of the layers in the magnetic element includes at least one magnetic layer. The plurality of layers also has a top and a plurality of sides. The passivation layer covers at least a portion of the plurality of sides.

摘要翻译： 公开了一种使用该磁性元件提供磁性元件和磁性存储器的方法和系统。 磁存储器包括多个磁性元件。 该方法和系统包括为多个磁性元件中的每一个提供多个层和钝化层。 磁性元件中的一部分层包括至少一个磁性层。 多个层还具有顶部和多个侧面。 钝化层覆盖多个边的至少一部分。

公开(公告)号：US06663920B2

公开(公告)日：2003-12-16

申请号：US10100130

申请日：2002-03-18

申请人： Cherng-Chyi Han ,  Rong-Fu Xiao ,  Mao-Min Chen ,  Po-Kang Wang

发明人： Cherng-Chyi Han ,  Rong-Fu Xiao ,  Mao-Min Chen ,  Po-Kang Wang

IPC分类号： B05D306

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/48 ,  G11B5/3163 ,  H01F41/302

摘要： A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the magnetoresistive (MR) layer to form: (1) an ion implanted portion of the magnetoresistive (MR) layer formed of an ion implanted magnetoresistive (MR) material; and (2) an adjoining non ion implanted portion of the magnetoresistive (MR) layer formed of the magnetoresistive (MR) material, where the ion implanted magnetoresistive (MR) material is a non magnetoresistive (MR) material. The method may be employed for forming within magnetoresistive (MR) sensor elements magnetoresistive (MR) layers with enhanced dimensional uniformity, and in particular enhanced overlay dimensional uniformity.