公开(公告)号：US4730523A

公开(公告)日：1988-03-15

申请号：US764896

申请日：1985-08-12

申请人： Masahiko Takahashi

发明人： Masahiko Takahashi

IPC分类号： F16H9/00 ,  F16H61/02 ,  F16H61/04 ,  F16H61/662 ,  B60K41/12

CPC分类号： F16H61/66263 ,  Y10T477/6242

摘要： A system for an infinitely variable belt-drive transmission for an engine comprises a primary pulley having a hydraulically shiftable disc, a secondary pulley having a hydraulically shiftable disc, a belt engaged with both pulleys, and a hydraulic circuit. A transmission ratio control valve having a spool is provided to be responsive to engine speed for controlling the oil and for shifting the disc of the primary pulley to change the transmission ratio. Pitot pressure dependent of the engine speed is applied to the spool to shift it against a spring, the force of which is determined by the depression of an accelerator pedal. The load on the spring is increased to provide a downshifting operation of the transmission, when the large transmission ratio range is selected.

摘要翻译： 用于发动机的无级变速皮带传动变速器的系统包括具有液压可移动盘的主带轮，具有液压可移动盘的次级带轮，与两个滑轮接合的带以及液压回路。 具有阀芯的传动比控制阀设置成响应于用于控制油的发动机转速和用于使主滑轮的盘移动以改变传动比。 皮托托压力取决于发动机转速被施加到阀芯上以使其相对于弹簧移动，弹簧的力由加速踏板的下压决定。 当选择大的传动比范围时，增加弹簧上的负载以提供变速器的降档操作。

公开(公告)号：US4645046A

公开(公告)日：1987-02-24

申请号：US693709

申请日：1985-01-23

申请人： Toshio Takano ,  Masahiko Takahashi

发明人： Toshio Takano ,  Masahiko Takahashi

IPC分类号： F16H37/02 ,  B60T1/00 ,  F16H61/28 ,  F16H61/662 ,  F16H63/04 ,  F16H63/06 ,  F16H63/16 ,  F16H63/18 ,  F16H63/34 ,  F16H63/36 ,  F16H63/48 ,  B60K20/00

CPC分类号： F16H63/3416 ,  B60T1/005 ,  F16H61/66254 ,  Y10T74/20085

摘要： A parking lock mechanism for a vehicle having an infinitely variable transmission provided with a synchronizer for engaging a forward gear train and a reverse gear train with a main shaft of the transmission. A parking lock position in a shift pattern of a selector lever is located adjacent a reverse position so that the selector lever can be shifted to the parking lock position passing through the reverse position. This means that the selector lever can not be shifted during forward driving of the vehicle.

摘要翻译： 一种用于具有无级变速传动装置的车辆的停车锁定机构，其具有用于接合前进齿轮系的同步器和具有变速器主轴的倒档齿轮系。 选档杆的换挡图形中的停车锁定位置位于相反的位置附近，使得选档杆可以移动到通过倒车位置的停车位置。 这意味着在车辆前进驾驶期间，换档杆不能移动。

公开(公告)号：US09678862B2

公开(公告)日：2017-06-13

申请号：US14560712

申请日：2014-12-04

申请人： Masahiko Takahashi

发明人： Masahiko Takahashi

IPC分类号： G06F12/02 ,  G06F9/445 ,  G06F12/08 ,  G06F12/1027

CPC分类号： G06F12/0238 ,  G06F9/445 ,  G06F12/0292 ,  G06F12/08 ,  G06F12/1027 ,  G06F2212/2022 ,  G06F2212/401 ,  G06F2212/68 ,  G06F2212/7201

摘要： A computer system, having a non-volatile storage unit (152), a main storage unit (151), and a data processor (102) including a memory management unit (102A) for managing a program stored in the non-volatile storage unit and the main storage unit to transfer a program stored in the non-volatile storage unit to the main storage unit, wherein the memory management unit (102A) includes a program storage control function of storing a program subjected to predetermined data conversion and a program yet to be subjected to predetermined data conversion in the non-volatile storage unit, and a function of combining programs subjected to predetermined data conversion so as not to bridge over a boundary between blocks at the execution of the program storage control function, as well as, at a first access to a certain block, expanding all the data included in the block to a corresponding block of the main storage unit.

公开(公告)号：US09291748B2

公开(公告)日：2016-03-22

申请号：US13078231

申请日：2011-04-01

申请人： Kazuhiko Momoki ,  Hirokatsu Miyata ,  Masahiko Takahashi ,  Daisuke Sano

发明人： Kazuhiko Momoki ,  Hirokatsu Miyata ,  Masahiko Takahashi ,  Daisuke Sano

IPC分类号： G02B1/10 ,  G02B1/118

CPC分类号： G02B1/118 ,  B29L2011/0016

摘要： The anti-reflection structure includes a graded refractive index layer that is disposed on a substrate and whose refractive index decreases as a distance from the substrate increases, and a homogeneous layer that is disposed on the graded refractive index layer and whose refractive index is homogeneous. The structure satisfies a condition of nb−na>0.10 where na represents the refractive index of the homogenous layer, and nb represents a homogenous layer side effective refractive index of the graded index refractive index layer.

摘要翻译： 防反射结构包括设置在基板上并且其折射率随着离开基板的距离而减小的渐变折射率层，以及设置在渐变折射率层上且折射率均匀的均匀层。 该结构满足nb-na> 0.10的条件，其中na表示均匀层的折射率，nb表示渐变折射率折射率层的均匀层侧有效折射率。

公开(公告)号：US09137271B2

公开(公告)日：2015-09-15

申请号：US13762728

申请日：2013-02-08

申请人： Masahiko Takahashi

发明人： Masahiko Takahashi

IPC分类号： H04L12/56 ,  H04L29/06 ,  H04L29/12 ,  H04L29/08 ,  H04L12/931 ,  H04L12/947

CPC分类号： H04L65/1086 ,  H04L29/12009 ,  H04L29/12452 ,  H04L29/12924 ,  H04L49/256 ,  H04L49/60 ,  H04L61/2546 ,  H04L61/6063 ,  H04L65/1069 ,  H04L67/1002 ,  H04L67/1014 ,  H04L67/1023 ,  H04L67/1027 ,  H04L67/14

摘要： A switching system in which a unique additional address is used for each session, and session information is transferred as it is without rewriting the session information when a communication device such as a server is switched, a switching method, and a switching program are disclosed. The switching system comprises a switching device (210) for selecting an address for each session from a first communication device, attaching the address to a packet from the first communication device in place of a destination address of the packet, and sending the packet, a dispatcher (240) for setting up a session with the first communication device, selecting a server to deal with the request from the first communication device, and transferring the set up session to a second communication device, and servers (250-1, . . . , 250-n) for taking over the session transferred by the dispatcher and dealing with the request from the first communication device.

摘要翻译： 一种交换系统，其中对于每个会话使用独特的附加地址，并且在公开诸如服务器的通信设备，切换方法和切换程序时，会话信息原样传送而不重写会话信息。 交换系统包括用于从第一通信设备选择每个会话的地址的交换设备（210），将地址附加到来自第一通信设备的分组，以代替分组的目的地地址，并发送分组， 调度器（240），用于建立与第一通信设备的会话，选择服务器以处理来自第一通信设备的请求，以及将建立会话传送到第二通信设备，以及服务器（250-1，...， ，250-n），用于接管调度员传送的会话并处理来自第一通信设备的请求。

公开(公告)号：US20130064352A1

公开(公告)日：2013-03-14

申请号：US13603733

申请日：2012-09-05

申请人： Wataru Kubo ,  Kohei Okamoto ,  Atsushi Komoto ,  Hirokatsu Miyata ,  Takashi Noma ,  Shin Kitamura ,  Masahiko Takahashi

发明人： Wataru Kubo ,  Kohei Okamoto ,  Atsushi Komoto ,  Hirokatsu Miyata ,  Takashi Noma ,  Shin Kitamura ,  Masahiko Takahashi

IPC分类号： G21K1/00 ,  B05D5/06

CPC分类号： G21K1/062 ,  B82Y10/00 ,  G21K1/067

摘要： An X-ray waveguide, for guiding X-rays having a wavelength of 1 pm or more and 100 nm or less, includes: a core and a cladding. The core has a periodic structure composed of a plurality of materials each having a different real part of refractive index in the direction perpendicular to the waveguiding direction. A planarizing layer is disposed between the core and the cladding. The critical angle for total reflection of the X-rays at the interface between the planarizing layer and the cladding is larger than the Bragg angle of the periodic structure of the core.

摘要翻译： 用于引导具有1μm以上且100nm以下的波长的X射线的X射线波导包括：芯和包层。 芯具有由多个材料组成的周期性结构，每个材料在垂直于波导方向的方向上具有不同的实部折射率。 平坦化层设置在芯和包层之间。 在平坦化层和包层之间的界面处的X射线的全反射的临界角大于芯的周期性结构的布拉格角。

公开(公告)号：US08396062B2

公开(公告)日：2013-03-12

申请号：US11915086

申请日：2006-05-11

申请人： Masahiko Takahashi

发明人： Masahiko Takahashi

IPC分类号： H04L12/28

CPC分类号： H04L65/1086 ,  H04L29/12009 ,  H04L29/12452 ,  H04L29/12924 ,  H04L49/256 ,  H04L49/60 ,  H04L61/2546 ,  H04L61/6063 ,  H04L65/1069 ,  H04L67/1002 ,  H04L67/1014 ,  H04L67/1023 ,  H04L67/1027 ,  H04L67/14

摘要： A switching system in which a unique additional address is used for each session, and session information is transferred as it is without rewriting the session information when a communication device such as a server is switched, a switching method, and a switching program are disclosed. The switching system comprises a switching device (210) for selecting an address for each session from a first communication device, attaching the address to a packet from the first communication device in place of a destination address of the packet, and sending the packet, a dispatcher (240) for setting up a session with the first communication device, selecting a server to deal with the request from the first communication device, and transferring the set up session to a second communication device, and servers (250-1, . . . , 250-n) for taking over the session transferred by the dispatcher and dealing with the request from the first communication device.

公开(公告)号：US20120167633A1

公开(公告)日：2012-07-05

申请号：US13255463

申请日：2010-03-08

申请人： Norio Hirayama ,  Naohiro Miyanaga ,  Masahiko Takahashi ,  Kentarou Ogawa

发明人： Norio Hirayama ,  Naohiro Miyanaga ,  Masahiko Takahashi ,  Kentarou Ogawa

IPC分类号： C03B37/085 ,  C03B37/02

CPC分类号： C03B5/2252 ,  C03B5/182 ,  C03B5/207 ,  C03B7/07 ,  C03B37/02 ,  C03B37/085 ,  Y02P40/57

摘要： A glass-melting device for producing glass fibers capable effectively reducing inclusion of bubbles into glass fibers to be spun, and a method for producing glass fibers using the same are provided.A glass-melting device 100 for producing glass fibers comprises: a first glass-melting tank 12; a conduit 14 extending downward from the first glass-melting tank 12; a sucking device 18 for exposing the first glass-melting tank 12 to a reduced-pressure atmosphere; a second glass-melting tank 20 provided on a lower portion of the conduit 14 and exposed to an atmospheric-pressure atmosphere; and a bushing 22 provided at a bottom portion of the second glass-melting tank 20 and equipped with a number of nozzles 22a.

摘要翻译： 提供一种用于制造能够有效地减少气泡混入待纺丝的玻璃纤维中的玻璃纤维的玻璃熔融装置，以及使用该玻璃纤维的玻璃纤维的制造方法。 用于制造玻璃纤维的玻璃熔化装置100包括：第一玻璃熔化槽12; 从第一玻璃熔化槽12向下延伸的导管14; 用于将第一玻璃熔化槽12暴露于减压气氛的吸入装置18; 第二玻璃熔池20设置在导管14的下部并暴露于大气压气氛中; 以及设置在第二玻璃熔化槽20的底部并配备有多个喷嘴22a的套管22。

公开(公告)号：US20110266257A1

公开(公告)日：2011-11-03

申请号：US13128951

申请日：2009-11-11

申请人： Tetsuya Nishizuka ,  Masahiko Takahashi ,  Toshihisa Ozu

发明人： Tetsuya Nishizuka ,  Masahiko Takahashi ,  Toshihisa Ozu

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/32192 ,  H01L21/3065 ,  H01L21/76229

摘要： A plasma etching method uses a plasma etching apparatus including a process chamber, a susceptor, a microwave supplying portion, a gas supplying portion, an evacuation apparatus, a bias electric power supplying portion that supplies alternating bias electric power to the susceptor, and a bias electric power control portion that controls the alternating bias electric power, wherein the bias electric power control portion controls the alternating bias electric power so that supplying and disconnecting the alternating bias electric power to the susceptor are alternately repeated to allow a ratio of a time period of supplying the alternating bias electric power with respect to a total time period of supplying the alternating bias electric power and disconnecting the alternating bias electric power to be 0.1 or more and 0.5 or less.

摘要翻译： 等离子体蚀刻方法使用等离子体蚀刻装置，其包括处理室，基座，微波供给部，气体供给部，排气装置，向基座提供交流偏置电力的偏置电力供给部，偏置 电力控制部分，其控制所述交流偏置电力，其中所述偏置电力控制部分控制所述交流偏压电力，使得向所述基座提供和断开所述交流偏置电力交替地重复，以允许所述交流偏置电力的时间段 将交流偏压电力提供给交流偏压电力的总时间并将交流偏压电力断开为0.1以上且0.5以下的交流偏压电力供给。

公开(公告)号：US20110039407A1

公开(公告)日：2011-02-17

申请号：US12673923

申请日：2008-08-26

申请人： Tetsuya Nishizuka ,  Masahiko Takahashi

发明人： Tetsuya Nishizuka ,  Masahiko Takahashi

IPC分类号： H01L21/336

CPC分类号： H01L21/32137 ,  H01L21/28 ,  H01L21/28008 ,  H01L21/306 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor device manufacturing method, the method including: forming an insulation layer having a protruding portion, the insulation layer having a surface and a rising surface that protrudes upward from the surface, on a semiconductor substrate; forming a conductive layer to cover the insulation layer having the protruding portion; and removing a predetermined region of the conductive layer by patterning the predetermined region according to an etching process using microwave plasma, which uses a microwave as a plasma source, while applying bias power of 70 mW/cm2 or above on the semiconductor substrate, under a high pressure condition of 85 mTorr or above.

摘要翻译： 一种半导体器件制造方法，所述方法包括：在半导体衬底上形成具有突出部分的绝缘层，所述绝缘层具有从所述表面向上突出的表面和上升表面; 形成导电层以覆盖具有突出部分的绝缘层; 并且通过使用微波等离子体（其使用微波作为等离子体源）的蚀刻工艺，在半导体衬底上施加70mW / cm 2或更高的偏置功率，在所述半导体衬底上施加预定区域，从而去除所述导电层的预定区域 85 mTorr以上高压条件。