公开(公告)号：US20070297098A1

公开(公告)日：2007-12-27

申请号：US11848374

申请日：2007-08-31

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive element includes a first magnetic layer a magnetization direction of which is substantially pinned, a second magnetic layer a magnetization direction of which varies depending on an external field, a magnetic spacer layer provided between the first magnetic layer and the second magnetic layer, and electrodes which supply a current perpendicularly to a plane of a stacked film including the first magnetic layer, the magnetic spacer layer and the second magnetic layer. In this element, the magnetization directions of the first and the second magnetic layers are substantially orthogonal at zero external field.

摘要翻译： 磁阻元件包括其磁化方向基本上被钉扎的第一磁性层，其磁化方向根据外部场变化的第二磁性层，设置在第一磁性层和第二磁性层之间的磁性间隔层，以及 电极，其垂直于包括第一磁性层，磁性间隔层和第二磁性层的层叠膜的平面提供电流。 在该元件中，第一和第二磁性层的磁化方向在零外场大致正交。

公开(公告)号：US07307819B2

公开(公告)日：2007-12-11

申请号：US11190886

申请日：2005-07-28

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

摘要： A magnetoresistive element includes a first magnetic layer a magnetization direction of which is substantially pinned, a second magnetic layer a magnetization direction of which varies depending on an external field, a magnetic spacer layer provided between the first magnetic layer and the second magnetic layer, and electrodes which supply a current perpendicularly to a plane of a stacked film including the first magnetic layer, the magnetic spacer layer and the second magnetic layer. In this element, the magnetization directions of the first and the second magnetic layers are substantially orthogonal at zero external field.

摘要翻译： 磁阻元件包括其磁化方向基本上被钉扎的第一磁性层，其磁化方向根据外部场变化的第二磁性层，设置在第一磁性层和第二磁性层之间的磁性间隔层，以及 电极，其垂直于包括第一磁性层，磁性间隔层和第二磁性层的层叠膜的平面提供电流。 在该元件中，第一和第二磁性层的磁化方向在零外场大致正交。

公开(公告)号：US20070202249A1

公开(公告)日：2007-08-30

申请号：US11703830

申请日：2007-02-08

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hitoshi Iwasaki

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hitoshi Iwasaki

IPC分类号： B05D5/12

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F41/303 ,  H01F41/325

摘要： A method is for manufacturing a magnetoresistance effect element having a magnetization fixed layer, a non-magnetic intermediate layer, and a magnetization free layer being sequentially stacked. The method includes: forming at least a part of a magnetic layer that is to become either one of the magnetization fixed layer and the magnetization free layer; forming a function layer including at least one of an oxide, a nitride, and a fluoride on the part of the magnetic layer; and removing a part of the function layer by exposing the function layer to either one of an ion beam and plasma irradiation.

摘要翻译： 一种用于制造具有磁化固定层，非磁性中间层和顺序堆叠的无磁化层的磁阻效应元件的方法。 该方法包括：形成要成为磁化固定层和磁化自由层中的任一个的磁性层的至少一部分; 在所述磁性层的一部分上形成包括氧化物，氮化物和氟化物中的至少一种的功能层; 以及通过将功能层暴露于离子束和等离子体照射中的任一种来去除功能层的一部分。

公开(公告)号：US20060077596A1

公开(公告)日：2006-04-13

申请号：US11248296

申请日：2005-10-13

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B5/398 ,  G11B2005/3996

摘要： A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and a nonmagnetic intermediate layer interposed therebetween. The nonmagnetic intermediate layer has a conduction part disposed in an insulation layer and made of a nonmagnetic metal material. The ferromagnetic film stacked on an upper side of the nonmagnetic intermediate layer, out of ferromagnetic films constituting the magnetization fixed layer and the magnetization free layer has a perpendicular orientation part which is disposed above the conduction part and whose crystal growth direction is substantially perpendicular to a film plane, and a non-perpendicular orientation part which exists in a portion other than the perpendicular orientation part. A magnetoresistive effect element has a pair of electrodes passing a sense current in a direction perpendicular to the film plane of the spin-valve magnetoresistive effect film.

公开(公告)号：US20060077595A1

公开(公告)日：2006-04-13

申请号：US11248203

申请日：2005-10-13

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B5/398 ,  G11B2005/3996

摘要： A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and an intermediate layer interposed therebetween. The intermediate layer has a conduction part disposed in an insulation layer and made of a magnetic metal material. The ferromagnetic film stacked on an upper side of the intermediate layer, out of ferromagnetic films constituting the magnetization fixed layer and the magnetization free layer has a perpendicular orientation part which is disposed above the conduction part and whose crystal growth direction is substantially perpendicular to a film plane, and a non-perpendicular orientation part which exists in a portion other than the perpendicular orientation part. A magnetoresistive effect element has a pair of electrodes passing a sense current in a direction perpendicular to the film plane of the magnetoresistive effect film.

公开(公告)号：US20050168887A1

公开(公告)日：2005-08-04

申请号：US11017965

申请日：2004-12-22

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Susumu Hashimoto ,  Hitoshi Iwasaki

IPC分类号： G11B5/39 ,  G11C11/16 ,  H01F10/16 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  H01L43/10 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  G11B5/39 ,  G11C11/16 ,  H01F10/3259 ,  H01F10/3263 ,  H01F41/325

摘要： A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer whose magnetization is substantially pinned to one direction, a nonmagnetic intermediate layer, and a magnetization free layer whose magnetization is changed in direction depending on an external magnetic field, in which the magnetization pinned layer or nonmagnetic intermediate layer includes an insulator, and a pair of electrodes electrically connected to the magnetoresistive film so as to supply a sense current in a direction substantially perpendicular to a plane of the magnetoresistive film. The magnetization free layer includes a body-centered cubic layer with a body-centered cubic structure, and the thickness of the body-centered cubic layer is 2 nm or more.

摘要翻译： 磁阻元件包括磁阻膜，其具有磁化被固定在一个方向上的磁化固定层，非磁性中间层和磁化自由层，其磁化方向取决于外部磁场而变化，其中磁化固定层 或非磁性中间层包括绝缘体和电连接到磁阻膜的一对电极，以便在基本垂直于磁阻膜的平面的方向上提供感测电流。 无磁化层包括以体心立方结构的体心立方层，体心立方层的厚度为2nm以上。

公开(公告)号：US08917485B2

公开(公告)日：2014-12-23

申请号：US11546975

申请日：2006-10-13

申请人： Hideaki Fukuzawa ,  Yoshinari Kurosaki ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Yoshinari Kurosaki ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Hitoshi Iwasaki

IPC分类号： G11B5/33 ,  G01R33/09 ,  G11B5/39 ,  G11C11/16 ,  H01L43/08 ,  H01F10/32 ,  B82Y25/00 ,  G11B5/455

CPC分类号： G11B5/3903 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/398 ,  G11B5/455 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01L43/08

摘要： A magnetoresistive effect element includes a magnetization fixed layer including a first crystal grain, having a magnetization direction which is fixed substantially in one direction, a spacer layer arranged on the magnetization fixed layer and having an insulating layer and a metal conductor penetrating the insulating layer, and a magnetization free layer including a second crystal grain, arranged on the spacer layer to oppose the metal conductor and having a magnetization direction which changes corresponding to an external magnetic field.

摘要翻译： 磁阻效应元件包括：磁化固定层，包括具有大致沿一个方向固定的磁化方向的第一晶粒;布置在磁化固定层上并具有绝缘层和贯穿绝缘层的金属导体的间隔层; 以及包含第二晶粒的无磁化层，其布置在所述间隔层上以与所述金属导体相对并且具有对应于外部磁场变化的磁化方向。

公开(公告)号：US08213129B2

公开(公告)日：2012-07-03

申请号：US11215971

申请日：2005-09-01

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Hitoshi Iwasaki

IPC分类号： G11B5/33

CPC分类号： G11B5/3903

摘要： A magnetoresistive element includes at least three metallic magnetic layers, at least two connection layers provided between the at least three metallic magnetic layers, each having an insulating layer and current confined paths including a metallic magnetic material penetrating the insulating layer, and electrodes which supply a current perpendicularly to a plane of a stacked film of the metallic magnetic layers and the connection layers.

摘要翻译： 磁阻元件包括至少三个金属磁性层，设置在至少三个金属磁性层之间的至少两个连接层，每个具有绝缘层和包含透过绝缘层的金属磁性材料的电流限制路径，以及提供 电流垂直于金属磁性层和连接层的叠层膜的平面。

公开(公告)号：US20100226048A1

公开(公告)日：2010-09-09

申请号：US11525076

申请日：2006-09-22

申请人： Hideaki Fukuzawa ,  Masahiro Takashita ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Masahiro Takashita ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Hitoshi Iwasaki

IPC分类号： G11B5/127

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3983 ,  G11C11/161 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01L27/224 ,  H01L27/228 ,  H01L43/12 ,  Y10T428/1121

摘要： A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed.

摘要翻译： 提供了由旋转传递转矩引起的噪声减小的磁阻效应元件，磁阻效应头，磁存储器和磁存储器。 在包括固定磁化层，间隔层和自由磁化层的磁阻效应元件的固定磁化层或自由磁化层中; 设置包含选自Ti，Zr，Nb，Mo，Ru，Rh，Pd，Ag，La，Hf，Ta，W，Re，Os，Ir，Pt和Au中的一种元素的层。

公开(公告)号：US07522390B2

公开(公告)日：2009-04-21

申请号：US11248203

申请日：2005-10-13

申请人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

发明人： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Hitoshi Iwasaki

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B5/398 ,  G11B2005/3996

摘要： A spin-valve magnetoresistive effect film includes a magnetization fixed layer, a magnetization free layer, and an intermediate layer interposed therebetween. The intermediate layer has a conduction part disposed in an insulation layer and made of a magnetic metal material. The ferromagnetic film stacked on an upper side of the intermediate layer, out of ferromagnetic films constituting the magnetization fixed layer and the magnetization free layer has a perpendicular orientation part which is disposed above the conduction part and whose crystal growth direction is substantially perpendicular to a film plane, and a non-perpendicular orientation part which exists in a portion other than the perpendicular orientation part. A magnetoresistive effect element has a pair of electrodes passing a sense current in a direction perpendicular to the film plane of the magnetoresistive effect film.

摘要翻译： 自旋阀磁阻效应膜包括磁化固定层，无磁化层和插入其间的中间层。 中间层具有设置在绝缘层中并由磁性金属材料制成的导电部分。 堆叠在中间层的上侧的铁磁性膜，构成磁化固定层的铁磁性膜和不含磁化层的铁磁性膜具有垂直取向部，该垂直取向部设置在导电部的上方，晶体生长方向大致垂直于膜 平面，以及存在于除垂直取向部以外的部分的非垂直取向部。 磁阻效应元件具有一对在垂直于磁阻效应膜的膜平面的方向上通过感测电流的电极。