DISPLAY DEVICE AND METHOD FOR MANUFACTURING A LIQUID CRYSTAL DISPLAY DEVICE
    71.
    发明申请
    DISPLAY DEVICE AND METHOD FOR MANUFACTURING A LIQUID CRYSTAL DISPLAY DEVICE 审中-公开
    用于制造液晶显示装置的显示装置和方法

    公开(公告)号:US20100033669A1

    公开(公告)日:2010-02-11

    申请号:US12536246

    申请日:2009-08-05

    IPC分类号: G02F1/1339 G02F1/13

    摘要: A display device has a pair of substrates arranged opposite to each other, a light modulation layer interposed between the pair of substrates, and spacers arranged between the pair of substrates to maintain a gap therebetween. A display area is formed by the pair of substrates, the modulation layer and the spacers, and includes a plurality of pixels arranged in rows and columns of a matrix. The spacers are arranged between adjacent pixels in the column direction so that an area density of the spacers continuously changes from an edge portion to a predetermined portion in the display area extending in the row direction.

    摘要翻译: 显示装置具有彼此相对布置的一对基板,插入在该对基板之间的光调制层和布置在该对基板之间的间隔件,以在其间保持间隙。 显示区域由一对基板,调制层和间隔物形成,并且包括排列成矩阵的行和列的多个像素。 间隔物在列方向上被布置在相邻像素之间,使得间隔物的面积密度从行方向上延伸的显示区域中的边缘部分连续地变化到预定部分。

    Liquid crystal display device having particular interval between spacer groups
    72.
    发明授权
    Liquid crystal display device having particular interval between spacer groups 有权
    液晶显示装置具有间隔组之间的特定间隔

    公开(公告)号:US07545475B2

    公开(公告)日:2009-06-09

    申请号:US11383881

    申请日:2006-05-17

    IPC分类号: G02F1/1339

    CPC分类号: G02F1/13394

    摘要: To suppress occurrence of low temperature bubbles while securing pressure resistance to external forces applied to substrates of a liquid crystal display device, a plurality of spacers disposed between the substrates are divided into a plurality of spacer groups 2, one unit of which is configured with spacers 2a, 2b allocated in close proximity to each other; and the spacer groups 2 are disposed with a density that the low temperature bubbles do not occur. Hence, the strength of the substrates increases, and in a region 10 where no spacers exist, a large deformation of the substrates by shrinkage is allowed, and a liquid crystal layer 8 is sufficiently enough shrunk even under a low temperature environment to prevent the low temperature bubbles from occurring.

    摘要翻译: 为了在确保对施加于液晶显示装置的基板的外力的耐压力的同时抑制低温气泡的发生,设置在基板之间的多个间隔件分成多个间隔件组2,一个单元构成间隔件 2a,2b彼此靠近分配; 并且隔离物组2以不发生低温气泡的密度设置。 因此,基板的强度增加,并且在不存在间隔物的区域10中,允许基板通过收缩而发生大的变形,并且即使在低温环境下也能够使液晶层8充分地收缩,以防止低的 发生温度气泡。

    THIN-FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE, CAD PROGRAM AND TRANSFER METHOD FOR THIN-FILM TRANSISTOR SUBSTRATE
    74.
    发明申请
    THIN-FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE, CAD PROGRAM AND TRANSFER METHOD FOR THIN-FILM TRANSISTOR SUBSTRATE 审中-公开
    薄膜晶体管基板,显示装置,CAD程序和薄膜晶体管基板的传输方法

    公开(公告)号:US20080061294A1

    公开(公告)日:2008-03-13

    申请号:US11937083

    申请日:2007-11-08

    IPC分类号: H01L29/04

    CPC分类号: H01L27/1266 H01L27/124

    摘要: A thin-film transistor substrate includes a pixel region where gate electrode lines are arranged on an insulating substrate sandwiching semiconductor layer patterns and a gate insulator with the insulating substrate, wherein shapes of the semiconductor patterns and the gate electrode lines are set so that a value of K obtained by the following equation is smaller than a first set value when the thin-film transistor substrate is mounted on a metal table: K=(L/Ce)×{Ca/(Ca+Cb)}×Swhere Ca represents a capacitor between each of the semiconductor layer patterns and the metal table, Cb represents a capacitor between each of the semiconductor layer patterns and the gate electrode lines, Ce represents a capacitor between each of the gate electrode lines and the metal table, L represents a length of each of the gate electrode line, and S represents a substrate surface area that one of the gate electrode lines are in charge of per unit length.

    摘要翻译: 薄膜晶体管基板包括栅极电极线布置在夹着半导体层图案的绝缘基板上的像素区域和具有绝缘基板的栅极绝缘体,其中半导体图案和栅电极线的形状被设置为使得值 当将薄膜晶体管基板安装在金属台上时,通过下式获得的K 3小于第一设定值:<?in-line-formula description =“In-line formula”end =“lead” K =(L / Ce)x {Ca /(Ca + Cb)} xS <βin-line-formula description =“In-line Formulas”end =“tail”?>其中Ca表示每个半导体 层图案和金属表,Cb表示每个半导体层图案和栅电极线之间的电容器,Ce表示每个栅电极线和金属台之间的电容器,L表示每个栅电极的长度 线,S表示基板表面积 栅极电极线之一负责每单位长度。

    Device with upper conductive element, lower conductive element, and insulating element
    75.
    发明授权
    Device with upper conductive element, lower conductive element, and insulating element 有权
    具有上导电元件,下导电元件和绝缘元件的装置

    公开(公告)号:US07161641B2

    公开(公告)日:2007-01-09

    申请号:US10963719

    申请日:2004-10-14

    IPC分类号: G02F1/136 G02F1/1343

    CPC分类号: G02F1/134363

    摘要: A liquid crystal display device comprising a pair of substrates with liquid crystal layer therebetween, a plurality of gate signal lines and a plurality of drain signal lines formed on one of the pair of substrates, at least a pixel electrode and a plurality of counter electrodes formed on the one of the pair of substrates in each pixels, at least one of the plurality of counter electrodes extend along a drain signal line overlapping to the drain signal lines with at least one of an insulation film therebetween, and the drain signal line has two or more regions which differ in distance between a surface of the drain signal line and the counter electrode.

    摘要翻译: 一种液晶显示装置,包括:一对基板,其间具有液晶层,形成在所述一对基板中的一个基板上的多个栅极信号线和多个漏极信号线,至少形成像素电极和形成的多个相对电极 在每个像素中的一对基板中的一个中,至少一个对置电极沿着与漏极信号线重叠的漏极信号线延伸,其间具有绝缘膜中的至少一个,并且漏极信号线具有两个 或更多的区域,其在漏极信号线的表面与对电极之间的距离不同。

    Semiconductor device, electronic circuit array substrate provided with the same and method of manufacturing the electronic circuit array substrate
    76.
    发明授权
    Semiconductor device, electronic circuit array substrate provided with the same and method of manufacturing the electronic circuit array substrate 有权
    半导体装置,具备该电子电路阵列基板的电子电路阵列基板以及制造该电子电路阵列基板的方法

    公开(公告)号:US07095048B2

    公开(公告)日:2006-08-22

    申请号:US10997934

    申请日:2004-11-29

    申请人: Tetsuya Kawamura

    发明人: Tetsuya Kawamura

    IPC分类号: H01L29/04 G02F1/1368

    CPC分类号: H01L27/124 G02F1/136227

    摘要: Dummy holes 36 are made for every one of display dot 5a, 5b and 5c at pixels 5 through interlayer film 33 up to gate electrode and scanning lines 11 before interlayer film 33 on glass substrate 3 is washed. When interlayer film 33 is washed, electric charges stored at semiconductor layer 21 are substantially the same in quantity as those stored at gate electrode and scanning lines 11 through dummy holes 36. Thus, electric potentials at gate electrode and scanning lines 11 are substantially equal in magnitude to those at semiconductor layer 21. This can suppress the occurrence of voltage differences imposed between gate electrode and scanning lines 11 and semiconductor layer 21.

    摘要翻译: 通过层间膜33直到栅电极和玻璃基板3上的层间膜33之间的扫描线11为止,在像素5处的显示点5a,5b和5c的每一个都形成虚拟孔36。 当层间膜33被洗涤时,存储在半导体层21处的电荷与通过虚拟孔36在栅电极和扫描线11处存储的电荷基本相同。 因此,栅极电极和扫描线11的电位与半导体层21的电位基本相同。 这可以抑制栅极与扫描线11和半导体层21之间施加的电压差的发生。

    Liquid crystal display device
    79.
    发明授权
    Liquid crystal display device 有权
    液晶显示装置

    公开(公告)号:US06340963B1

    公开(公告)日:2002-01-22

    申请号:US09448514

    申请日:1999-11-24

    IPC分类号: G09G336

    摘要: A is employed for eliminating variations of thin-film transistor threshold values to obtain enhanced on-screen displayability of high-quality images while simultaneously increasing the manufacturing yield and reliability. In a liquid crystal display device including: an active-matrix substrate having a plurality of scan electrode leads, a plurality of image signal electrode leads crossing over the plurality of scan electrode leads, scan electrode lead terminals which extend from the scan electrode leads in an effective display area thereof to one of the sides thereof, and image signal electrode terminals which extend from the image signal electrode leads in the effective display area to the other of the sides thereof neighboring upon the one side, being formed on an upper surface thereof respectively; a color filter substrate having a common electrode formed thereon; a layer of liquid crystals being sealed between the active-matrix substrate and the color filter substrate; common electrode lead terminals for connection to the common electrode; and driver circuitry including a scan electrode driver circuit and image signal electrode driver circuit for supplying the scan electrode lead terminals and image signal electrode lead terminals with more than one signal voltage for on-screen image visualization. The device further has a first electrostatic protective element for connecting a respective odd-numbered one of the image signal electrode terminals and a second electrostatic protective element for connecting a respective even-numbered one of the image signal electrode terminals. The first and second electrostatic protective leads are electrically divided into one another on the matrix substrate and electrically connected to one another by the common electrode lead terminals.

    摘要翻译: A用于消除薄膜晶体管阈值的变化,以获得高质量图像的增强的屏幕可显示性,同时提高制造产量和可靠性。 在一种液晶显示装置中,包括:具有多个扫描电极引线的有源矩阵基板,与多个扫描电极引线相交的多个图像信号电极引线,从扫描电极引线延伸的扫描电极引线端子 在其一侧的有效显示区域和从图像信号电极延伸的图像信号电极端子分别在其上表面上形成在有效显示区域中的与一侧相邻的另一侧 ; 滤色器基板,其上形成有公共电极; 在有源矩阵基板和滤色器基板之间密封一层液晶; 用于连接到公共电极的公共电极引线端子; 以及包括用于为扫描电极引线端子和图像信号电极引线端子提供多于一个信号电压的扫描电极驱动电路和图像信号电极驱动电路的驱动器电路,用于屏幕图像可视化。 该装置还具有用于连接图像信号电极端子中相应的奇数编号的第一静电保护元件和用于连接各个偶数个图像信号电极端子的第二静电保护元件。 第一静电保护引线和第二静电保护引线在矩阵基板上彼此电分割,并通过公共电极引线端子彼此电连接。

    Method of manufacturing thin film transistor
    80.
    发明授权
    Method of manufacturing thin film transistor 失效
    制造薄膜晶体管的方法

    公开(公告)号:US5397718A

    公开(公告)日:1995-03-14

    申请号:US19682

    申请日:1993-02-19

    摘要: In a method of manufacturing a thin film transistor, when impurity ions are introduced in a channel region between source and drain regions in a semiconductor layer, an insulator layer is first formed on the semiconductor layer. Then, impurity ions generated on high frequency discharge are introduced through the insulator layer into the semiconductor layer under a specified acceleration voltage. Then, the introduction depth of impurities and the amount of the impurities to be introduced in the channel region can be controlled or the threshold voltage of the thin film transistor can be controlled. This method can be applied to a large substrate.

    摘要翻译: 在制造薄膜晶体管的方法中,当在半导体层中的杂质离子被引入源极和漏极区域之间的沟道区域中时,首先在半导体层上形成绝缘体层。 然后,在规定的加速电压下,在高频放电中产生的杂质离子通过绝缘体层导入半导体层。 然后,可以控制杂质的引入深度和引入沟道区域中的杂质的量,或者可以控制薄膜晶体管的阈值电压。 该方法可以应用于大型基板。