公开(公告)号：US5397718A

公开(公告)日：1995-03-14

申请号：US19682

申请日：1993-02-19

申请人： Mamoru Furuta ,  Tetsuya Kawamura ,  Tatsuo Yoshioka ,  Hiroshi Sano ,  Yutaka Miyata

发明人： Mamoru Furuta ,  Tetsuya Kawamura ,  Tatsuo Yoshioka ,  Hiroshi Sano ,  Yutaka Miyata

IPC分类号： H01L21/3215 ,  H01L21/336 ,  H01L29/786 ,  H01L21/265

CPC分类号： H01L29/66757 ,  H01L21/32155 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678 ,  Y10S148/15

摘要： In a method of manufacturing a thin film transistor, when impurity ions are introduced in a channel region between source and drain regions in a semiconductor layer, an insulator layer is first formed on the semiconductor layer. Then, impurity ions generated on high frequency discharge are introduced through the insulator layer into the semiconductor layer under a specified acceleration voltage. Then, the introduction depth of impurities and the amount of the impurities to be introduced in the channel region can be controlled or the threshold voltage of the thin film transistor can be controlled. This method can be applied to a large substrate.

摘要翻译： 在制造薄膜晶体管的方法中，当在半导体层中的杂质离子被引入源极和漏极区域之间的沟道区域中时，首先在半导体层上形成绝缘体层。 然后，在规定的加速电压下，在高频放电中产生的杂质离子通过绝缘体层导入半导体层。 然后，可以控制杂质的引入深度和引入沟道区域中的杂质的量，或者可以控制薄膜晶体管的阈值电压。 该方法可以应用于大型基板。

公开(公告)号：US5365034A

公开(公告)日：1994-11-15

申请号：US126209

申请日：1993-09-24

申请人： Tetsuya Kawamura ,  Hiroshi Sano ,  Mamoru Furuta ,  Tatsuo Yoshioka ,  Yutaka Miyata

发明人： Tetsuya Kawamura ,  Hiroshi Sano ,  Mamoru Furuta ,  Tatsuo Yoshioka ,  Yutaka Miyata

IPC分类号： G01R31/02 ,  G01R31/302 ,  G01R31/311 ,  G02F1/13 ,  G02F1/1343 ,  G02F1/1362 ,  B23K26/02

CPC分类号： G01R31/311 ,  G02F1/1309 ,  G02F1/136259 ,  G02F2001/136254

摘要： A laser beam is irradiated and scanned on a substrate of a liquid crystal display device of an active matrix type. Pairs of electrons and holes caused by the known internal photoelectric effect are produced by irradiation of the laser beam to electrical conductive thin films including silicon layered on the substrate, and pass through a defective part of short circuit in an intersection of the plural electrical conductive thin films, and thereby a current flowing through the intersection increases and a position of the defect determined on the basis of the scanning position of the laser beam and the increase of the current.

摘要翻译： 激光束被照射并扫描在有源矩阵型的液晶显示装置的基板上。 由已知的内部光电效应引起的电子和空穴的成对是通过将激光束照射到层叠在基板上的包含硅的导电薄膜中而产生的，并且穿过多个导电薄片 膜，从而流过该交点的电流增加，并且基于激光束的扫描位置确定的缺陷的位置和电流的增加。

公开(公告)号：US5351145A

公开(公告)日：1994-09-27

申请号：US818573

申请日：1992-01-09

申请人： Yutaka Miyata ,  Mamoru Furuta ,  Tatsuo Yoshioka ,  Hiroshi Tsutsu ,  Tetsuya Kawamura

发明人： Yutaka Miyata ,  Mamoru Furuta ,  Tatsuo Yoshioka ,  Hiroshi Tsutsu ,  Tetsuya Kawamura

IPC分类号： G02F1/133 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/20 ,  G09G3/36 ,  G11C11/00 ,  G11C11/404

CPC分类号： G11C11/404 ,  G09G3/3648 ,  G09G3/3659 ,  G09G3/3677 ,  G11C11/005 ,  G02F2001/136245 ,  G09G2300/0823 ,  G09G2320/0204 ,  G09G2320/0219

摘要： An active matrix substrate includes a transparent substrate, pairs each having an n-type thin-film transistor and a p-type thin-film transistor formed on the transparent substrate, gate bus lines and source bus lines connected to the n-type and p-type transistors for controlling the n-type and p-type transistors, and pixel-corresponding electrodes controlled by the transistor pairs respectively. Drains of an n-type transistor and a p-type transistor in each of the pairs are connected to each other via a related pixel corresponding electrode. First pulses are applied to gates of the n-type transistors. Second pulses are applied to gates of the p-type transistors. There is provided a difference in phase between the first pulses and the second pulses.

摘要翻译： 有源矩阵基板包括透明基板，每个具有n型薄膜晶体管的对和形成在透明基板上的p型薄膜晶体管，栅极总线和连接到n型和p型的源极总线 用于控制n型和p型晶体管的晶体管，以及由晶体管对控制的像素对应的电极。 每对中的n型晶体管和p型晶体管的漏极通过相关的像素对应电极彼此连接。 第一脉冲施加到n型晶体管的栅极。 第二脉冲施加到p型晶体管的栅极。 提供了第一脉冲和第二脉冲之间的相位差。

公开(公告)号：US5523865A

公开(公告)日：1996-06-04

申请号：US319048

申请日：1994-10-06

申请人： Mamoru Furuta ,  Tetsuya Kawamura ,  Shigeki Maegawa ,  Yutaka Miyata

发明人： Mamoru Furuta ,  Tetsuya Kawamura ,  Shigeki Maegawa ,  Yutaka Miyata

IPC分类号： G02F1/1335 ,  G02F1/1368 ,  G02F1/136 ,  G02F1/1333

CPC分类号： G02F1/1368 ,  G02F1/133512 ,  G02F2202/104

摘要： The present invention relates to a thinfilm transistor array designed to drive an active-matrix type liquid-crystal panel to be incorporated in a liquid-crystal display device, and is to offer a thinfilm transistor array solving the conventional problems of disconnections possible between the display electrodes and the drain electrodes and short-circuits possible between the display electrodes and the data wiring. By these, high-quality images can be displayed with a high reliability can be obtained together with an improved fabrication process thereof. In order to accomplish these objectives of the invention, the display electrodes of said thinfilm transistor array are disposed between the gate insulation layer and the inter-insulation layer, and the display electrodes are connected to the drain electrodes by means of a data wiring disposed through contact holes provided through the inter-insulation layer. Furthermore, the possibility of short-circuits can be minimized by insulating and isolating the display electrodes from the data wiring by means of inter-insulation layers, so that the distance between the data wiring and the display electrode can minimized and a remarkable improvement of the displayed image quality can be obtained.

摘要翻译： 薄膜晶体管阵列技术领域本发明涉及一种薄膜晶体管阵列，其被设计成驱动有源矩阵型液晶面板并入液晶显示装置中，并提供一种薄膜晶体管阵列，其解决了在显示器之间可能的断开的常规问题 电极和漏电极以及显示电极和数据布线之间的短路。 通过这些，可以与其改进的制造工艺一起获得高可靠性的高品质图像显示。 为了实现本发明的这些目的，所述薄膜晶体管阵列的显示电极设置在栅极绝缘层和绝缘层之间，并且显示电极通过布置成穿过的数据布线连接到漏电极 通过绝缘层提供的接触孔。 此外，通过绝缘层将显示电极与数据布线绝缘和隔离，可以最小化短路的可能性，使得数据布线和显示电极之间的距离可以最小化，并且显着改善 可以获得显示的图像质量。

公开(公告)号：US5766989A

公开(公告)日：1998-06-16

申请号：US579140

申请日：1995-12-27

申请人： Shigeki Maegawa ,  Mamoru Furuta ,  Hiroshi Tsutsu ,  Tetsuya Kawamura ,  Yutaka Miyata

发明人： Shigeki Maegawa ,  Mamoru Furuta ,  Hiroshi Tsutsu ,  Tetsuya Kawamura ,  Yutaka Miyata

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/268

CPC分类号： H01L29/66757 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02686 ,  Y10S117/904 ,  Y10S148/09

摘要： A method for forming a polycrystalline semiconductor thin film according to the present invention includes the steps of: forming a semiconductor thin film partially containing microcrystals serving as crystal nuclei for polycrystallization on an insulating substrate; and polycrystallizing the semiconductor thin film by laser annealing.

摘要翻译： 根据本发明的形成多晶半导体薄膜的方法包括以下步骤：在绝缘基板上形成部分含有作为多结晶晶体的微晶的半导体薄膜; 并通过激光退火多晶化半导体薄膜。

公开(公告)号：US5591668A

公开(公告)日：1997-01-07

申请号：US402476

申请日：1995-03-13

申请人： Shigeki Maegawa ,  Tetsuya Kawamura ,  Mamoru Furuta ,  Yutaka Miyata

发明人： Shigeki Maegawa ,  Tetsuya Kawamura ,  Mamoru Furuta ,  Yutaka Miyata

IPC分类号： H01L21/268 ,  H01L21/20

CPC分类号： H01L21/2026 ,  Y10S117/904 ,  Y10S148/09 ,  Y10S148/093 ,  Y10S148/122

摘要： A laser annealing method for a semiconductor thin film for irradiating the semiconductor thin film with a laser beam having a section whose outline includes a straight-line portion, so as to change the crystallinity of the semiconductor thin film is provided, wherein the semiconductor thin film is overlap-irradiated with the laser beam while the laser beam is shifted in a direction different from a direction along the straight-line portion. A thin film semiconductor device fabricated by use of the laser annealing method is also provided.

摘要翻译： 提供一种半导体薄膜的激光退火方法，其用具有包括直线部分的截面的激光束照射半导体薄膜，以改变半导体薄膜的结晶度，其中半导体薄膜 与激光束重叠照射，同时激光束沿与沿着直线部分的方向不同的方向移动。 还提供了使用激光退火方法制造的薄膜半导体器件。

公开(公告)号：US5680190A

公开(公告)日：1997-10-21

申请号：US456563

申请日：1995-06-01

申请人： Akiko Michibayashi ,  Tetsuya Kawamura ,  Mamoru Furuta ,  Yutaka Miyata

发明人： Akiko Michibayashi ,  Tetsuya Kawamura ,  Mamoru Furuta ,  Yutaka Miyata

IPC分类号： G02F1/136 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/134309 ,  G02F1/136213 ,  G02F1/1368 ,  G02F2001/134345 ,  G02F2001/134354

摘要： A liquid crystal display apparatus includes: a liquid crystal layer; a first substrate and a second substrate interposing the liquid crystal layer therebetween; a pixel electrode and a counter electrode respectively provided on opposing faces of the first substrate and the second substrate for applying a voltage to the liquid crystal layer; and a thin-film transistor provided on the first substrate and electrically connected to the pixel electrode, the thin-film transistor including a semiconductor layer having a source region and a drain region, wherein the pixel electrode is divided into a first sub-pixel electrode and a second sub-pixel electrode; parts of the first and second sub-pixel electrodes are overlapped via an insulating layer with each other; and at least one of the first and second sub-pixel electrodes is made of the same transparent material as a material for the semiconductor layer.

摘要翻译： 液晶显示装置包括：液晶层; 在其间插入液晶层的第一基板和第二基板; 分别设置在所述第一基板和所述第二基板的相对面上的用于向所述液晶层施加电压的像素电极和对置电极; 以及薄膜晶体管，其设置在所述第一基板上并与所述像素电极电连接，所述薄膜晶体管包括具有源极区域和漏极区域的半导体层，其中，所述像素电极被分割为第一子像素电极 和第二子像素电极; 第一子像素电极和第二子像素电极的部分经由绝缘层彼此重叠; 并且第一和第二子像素电极中的至少一个由与半导体层的材料相同的透明材料制成。

公开(公告)号：US07977169B2

公开(公告)日：2011-07-12

申请号：US11704838

申请日：2007-02-09

申请人： Takashi Hirao ,  Mamoru Furuta ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu

发明人： Takashi Hirao ,  Mamoru Furuta ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu

IPC分类号： H01L21/00

CPC分类号： H01L21/02422 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02554 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/045 ,  H01L29/4908 ,  H01L29/7869 ,  H01L29/78693

摘要： A semiconductor device includes an oxide semiconductor thin film layer primarily including zinc oxide having at least one orientation other than (002) orientation. The zinc oxide may have a mixed orientation including (002) orientation and (101) orientation. Alternatively, the zinc oxide may have a mixed orientation including (100) orientation and (101) orientation.

摘要翻译： 半导体器件包括氧化物半导体薄膜层，其主要包括具有除（002）取向之外的至少一个取向的氧化锌。 氧化锌可以具有包括（002）取向和（101）取向的混合取向。 或者，氧化锌可以具有包括（100）取向和（101）取向的混合取向。

公开(公告)号：US07598520B2

公开(公告)日：2009-10-06

申请号：US11809858

申请日：2007-06-01

申请人： Takashi Hirao ,  Takahiro Hiramatsu ,  Mamoru Furuta ,  Hiroshi Furuta ,  Tokiyoshi Matsuda

发明人： Takashi Hirao ,  Takahiro Hiramatsu ,  Mamoru Furuta ,  Hiroshi Furuta ,  Tokiyoshi Matsuda

IPC分类号： H01L29/12 ,  H01L31/0256 ,  H01L27/15 ,  H01L23/62

CPC分类号： H01L29/7869 ,  H01L29/04 ,  H01L29/045 ,  H01L29/78618

摘要： A semiconductor device includes an oxide semiconductor thin film layer of zinc oxide. The (002) lattice planes of at least a part of the oxide semiconductor thin film layer have a preferred orientation along a direction perpendicular to a substrate of the semiconductor device and a lattice spacing d002 of at least 2.619 Å.

摘要翻译： 半导体器件包括氧化锌的氧化物半导体薄膜层。 氧化物半导体薄膜层的至少一部分的（002）晶格面沿着与半导体器件的衬底垂直的方向具有优选的取向，晶格间距d002至少为2.619A。

公开(公告)号：US20070187760A1

公开(公告)日：2007-08-16

申请号：US11701343

申请日：2007-02-01

申请人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

发明人： Mamoru Furuta ,  Takashi Hirao ,  Hiroshi Furuta ,  Tokiyoshi Matsuda ,  Takahiro Hiramatsu ,  Hiromitsu Ishii ,  Hitoshi Hokari ,  Motohiko Yoshida

IPC分类号： H01L27/12 ,  H01L21/84

CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

摘要： A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.

摘要翻译： 薄膜晶体管包括基板和形成在基板上并在其间形成间隙的一对源/漏电极（即源电极和漏电极）。 提供一对低电阻导电薄膜，使得每个涂覆源极/漏极之一的至少一部分。 低电阻导电薄膜在它们之间限定了间隙。 在一对低电阻导电薄膜的上表面上连续地形成氧化物半导体薄膜层，并且沿着限定在低电阻导电薄膜之间的间隙延伸以作为沟道起作用。 氧化物半导体薄膜层的侧表面和低电阻导电薄膜的相应侧表面在沟道的沟道宽度方向上彼此重合。