公开(公告)号：US20070132005A1

公开(公告)日：2007-06-14

申请号：US11562223

申请日：2006-11-21

申请人： Young-Ho Kim ,  Yong-Tae Kim ,  Weon-Ho Park ,  Kyoung-Hwan Kim ,  Ji-Hoon Park

发明人： Young-Ho Kim ,  Yong-Tae Kim ,  Weon-Ho Park ,  Kyoung-Hwan Kim ,  Ji-Hoon Park

IPC分类号： H01L21/336

CPC分类号： H01L27/0207 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11524

摘要： An electrically erasable and programmable read only memory (EEPROM) is fabricated by forming isolation patterns defining active regions in predetermined regions of a semiconductor substrate including a memory transistor region and a selection transistor region. A gate insulating layer having tunnel regions is formed on the active regions. A first conductive layer is formed on the resultant structure having the gate insulating layer. The first conductive layer is patterned to form openings exposing top surfaces of the isolation patterns. The patterning takes place such that a distance between a selected opening and the active region adjacent the opening varies depending on the width of the isolation pattern disposed under the opening. Related EEPROM devices are also disclosed.

摘要翻译： 通过在包括存储晶体管区域和选择晶体管区域的半导体衬底的预定区域中形成限定有源区域的隔离图案来制造电可擦除和可编程只读存储器（EEPROM）。 在有源区上形成具有隧道区的栅极绝缘层。 在具有栅极绝缘层的所得结构上形成第一导电层。 图案化第一导电层以形成露出隔离图案顶表面的开口。 进行图案化，使得所选择的开口和邻近开口的有源区域之间的距离根据设置在开口下方的隔离图案的宽度而变化。 还公开了相关的EEPROM器件。

公开(公告)号：US20070019654A1

公开(公告)日：2007-01-25

申请号：US10558431

申请日：2004-05-14

申请人： Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

发明人： Sam-Chul Ha ,  Seung-Myun Baek ,  Koon-Seok Lee ,  Yong-Tae Kim

IPC分类号： H04J1/16 ,  H04L12/56

CPC分类号： H04L43/00 ,  H04L12/2803 ,  H04L12/2818 ,  H04L12/2825 ,  H04L43/0817 ,  H04L2012/2849

摘要： The present invention discloses a home network system using a living network control protocol. The home network system includes: an electric device having at least two heterogeneous function means; a network based on a predetermined protocol; and a network manager for controlling and/or monitoring the electric device through the network, the electric device including a packet processing device having one node address provided by the network manager, generating a packet having the node address, transmitting the packet to the network manager, address from the network manager, and enabling the heterogeneous function means corresponding to a command included in the packet to execute the command.

摘要翻译： 本发明公开了一种使用生活网络控制协议的家庭网络系统。 家庭网络系统包括：具有至少两个异构功能装置的电子装置; 基于预定协议的网络; 以及网络管理器，用于通过网络控制和/或监视电子设备，该电子设备包括具有由网络管理器提供的一个节点地址的分组处理设备，生成具有节点地址的分组，将分组发送到网络管理器 来自网络管理器的地址，并且启用与包括在分组中的命令相对应的异构功能装置来执行命令。

公开(公告)号：US07148110B2

公开(公告)日：2006-12-12

申请号：US11415466

申请日：2006-05-01

申请人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Yong-Tae Kim

发明人： Hee-Seog Jeon ,  Seung-Beom Yoon ,  Yong-Tae Kim

IPC分类号： H02L21/336

CPC分类号： H01L27/115 ,  H01L21/28282 ,  H01L27/11568 ,  H01L29/4232 ,  H01L29/792

摘要： In a local-length nitride SONOS device and a method for forming the same, a local-length nitride floating gate structure is provided for mitigating or preventing lateral electron migration in the nitride floating gate. The structure includes a thin gate oxide, which leads to devices having a lower threshold voltage. In addition, the local-length nitride layer is self-aligned, which prevents nitride misalignment, and therefore leads to reduced threshold voltage variation among the devices.

摘要翻译： 在本地长度的氮化物SONOS器件及其形成方法中，提供局部长度的氮化物浮栅结构，用于减轻或防止氮化物浮栅中的横向电子迁移。 该结构包括薄栅极氧化物，其导致具有较低阈值电压的器件。 此外，局部长度的氮化物层是自对准的，这防止氮化物不对准，并且因此导致器件之间的阈值电压变化降低。

公开(公告)号：US20060133174A1

公开(公告)日：2006-06-22

申请号：US11270711

申请日：2005-11-08

申请人： Seong-Il Kim ,  Yong-Tae Kim ,  Young-Hwan Kim ,  Chun-Keun Kim ,  Min-Soo Youm

发明人： Seong-Il Kim ,  Yong-Tae Kim ,  Young-Hwan Kim ,  Chun-Keun Kim ,  Min-Soo Youm

IPC分类号： G11C7/00

CPC分类号： H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/128 ,  H01L45/1675

摘要： Provided is a phase-change RAM containing a substrate, a lower electrode, a phase-change material, an upper electrode and a thermal dissipation layer, wherein the thermal dissipation layer contains an aluminum-nitride thermal dissipation layer having a high heat conductivity, and the lower electrode contains a titanium-nitride electrode which generates a great amount of heat generated using a small amount of current and has a low heat conductivity, whereby heat generated between the phase-change material and the electrode is not transferred to the interior of a device but fast dissipated to the exterior thereof, so as to enable a high speed operation using low current and improve reliability of the device.

摘要翻译： 提供了一种包含基板，下电极，相变材料，上电极和散热层的相变RAM，其中散热层包含具有高导热性的氮化铝散热层，以及 下电极含有氮化钛电极，其产生使用少量电流产生的大量热量并且具有低导热性，由此在相变材料和电极之间产生的热量不会转移到 器件，但是快速消散到其外部，以便能够使用低电流的高速操作并且提高器件的可靠性。

公开(公告)号：US20050153502A1

公开(公告)日：2005-07-14

申请号：US11025279

申请日：2004-12-29

申请人： Jae-Hwang Kim ,  Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Young-Sam Park

发明人： Jae-Hwang Kim ,  Yong-Suk Choi ,  Seung-Beom Yoon ,  Yong-Tae Kim ,  Young-Sam Park

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L29/42328

摘要： A flash memory device including a tunnel dielectric layer, a floating gate layer, an interlayer dielectric layer and at least two mold layers formed on a semiconductor substrate and a method of manufacturing the same are provided. By sequentially patterning the layers, a first mold layer pattern and a floating gate layer pattern aligned with each other are formed. Exposed portions of side surfaces of the first mold layer pattern are selectively lateral etched, thereby forming a first mold layer second pattern having grooves in its sidewalls. A gate dielectric layer is formed on the semiconductor substrate adjacent to the floating gate layer pattern. A control gate having a width that is determined by the grooves in the second mold layer pattern is formed on the gate dielectric layer. By removing the first mold layer second pattern, spacers are formed on sidewalls of the control gate. Exposed portions of the interlayer dielectric layer and the floating gate layer pattern are selectively etched, using the spacer as an etch mask to form a floating gate having a width defined by the widths of the groove and spacer.

摘要翻译： 提供一种包括隧道介电层，浮栅，层间电介质层和形成在半导体衬底上的至少两个模层的闪存器件及其制造方法。 通过顺序地图案化这些层，形成彼此对准的第一模具层图案和浮动栅极层图案。 选择性地横向蚀刻第一模具层图案的侧表面的暴露部分，从而在其侧壁中形成具有凹槽的第一模具层第二图案。 栅极电介质层形成在与浮动栅层图案相邻的半导体衬底上。 具有由第二模层图案中的凹槽确定的宽度的控制栅极形成在栅介质层上。 通过去除第一模具层第二图案，在控制门的侧壁上形成间隔物。 使用间隔物作为蚀刻掩模来选择性地蚀刻层间电介质层和浮栅层图案的暴露部分，以形成具有由沟槽和间隔物的宽度限定的宽度的浮动栅极。

公开(公告)号：US09491437B2

公开(公告)日：2016-11-08

申请号：US13992297

申请日：2011-12-07

申请人： Hong-Seok Park ,  Yong-Tae Kim ,  Jae-Jun Lee ,  Moon-Seok Jang ,  Yu-Sung Joo

发明人： Hong-Seok Park ,  Yong-Tae Kim ,  Jae-Jun Lee ,  Moon-Seok Jang ,  Yu-Sung Joo

IPC分类号： H04N21/43 ,  H04N13/00 ,  H04N21/4627 ,  H04N21/63 ,  H04N21/433 ,  H04N21/8355

CPC分类号： H04N13/189 ,  H04N21/4307 ,  H04N21/4331 ,  H04N21/4627 ,  H04N21/631 ,  H04N21/8355

摘要： A receiver is disclosed. The receiver comprises: a first receiving unit for receiving non-real-time data for constituting multimedia content; a storage unit for storing the non-real-time data; a second receiving unit for receiving real-time data for constituting multimedia content; a data processing unit which, if the real-time data has been received, detects the non-real-time data, in conjunction with the real-time data, from among the data stored in the storage unit, binds the detected non-real-time data and the received real-time data, and outputs multimedia content; and a control unit for controlling the data processing unit so as to restrict the output of the non-real-time data prior to the time of the output of the real-time data.

摘要翻译： 公开了接收机。 接收机包括：第一接收单元，用于接收用于构成多媒体内容的非实时数据; 用于存储非实时数据的存储单元; 第二接收单元，用于接收用于构成多媒体内容的实时数据; 数据处理单元，如果已经接收到实时数据，则结合实时数据，从存储在存储单元中的数据中检测非实时数据，将检测到的非真实数据 时间数据和接收到的实时数据，并输出多媒体内容; 以及控制单元，用于控制数据处理单元，以便在实时数据的输出时间之前限制非实时数据的输出。

公开(公告)号：US20120314033A1

公开(公告)日：2012-12-13

申请号：US13580861

申请日：2011-02-23

申请人： Gun-Ill Lee ,  Ha-Joong Park ,  Yong-Tae Kim ,  Houng-Sog Min ,  Sung-Bin Hong ,  Kwang-Cheol Choi

发明人： Gun-Ill Lee ,  Ha-Joong Park ,  Yong-Tae Kim ,  Houng-Sog Min ,  Sung-Bin Hong ,  Kwang-Cheol Choi

IPC分类号： G06K9/00 ,  H04N13/02

CPC分类号： H04N13/189 ,  H04N13/178 ,  H04N13/204

摘要： The present invention relates to an apparatus and a method for processing three-dimensional (3D) image data of a portable terminal, and particularly, to an apparatus and a method for enabling contents sharing and reproduction (playback) between various 3D devices using a file structure for effectively storing a 3D image obtained using a plurality of cameras, and a stored 3D related parameter, and sharing and reproduction between various 3D devices are possible using a file structure for effectively storing a 3D image (for example, a stereo image) obtained using a plurality of cameras, and a stored 3D related parameter.

摘要翻译： 本发明涉及一种用于处理便携式终端的三维（3D）图像数据的装置和方法，特别涉及一种使用文件在各种3D设备之间进行内容共享和再现（回放）的装置和方法 可以使用用于有效地存储获得的3D图像（例如，立体图像）的文件结构来有效地存储使用多个相机获得的3D图像和存储的3D相关参数以及各种3D设备之间的共享和再现的结构 使用多个摄像机和存储的3D相关参数。

公开(公告)号：US08139937B2

公开(公告)日：2012-03-20

申请号：US12443416

申请日：2007-09-21

申请人： Sung-Chang Kim ,  Bin-Yeong Yoon ,  Yong-Tae Kim ,  Geun-Yong Kim ,  Bong-Tae Kim

发明人： Sung-Chang Kim ,  Bin-Yeong Yoon ,  Yong-Tae Kim ,  Geun-Yong Kim ,  Bong-Tae Kim

IPC分类号： H04B10/08 ,  H04B10/20 ,  H04B10/04 ,  H04J14/08

CPC分类号： H04Q11/0067 ,  H04Q2011/0083

摘要： Provided is an automatic optical power control method for an optical line terminal (OLT) of a passive optical network (PON). The automatic optical power control method includes at the OLT, measuring an allowable range of the optical power allowing a normal network operation on the PON, at the OLT, setting an optimum optical signal level within the measured allowable range of the optical power, and at the OLT, adjusting a power level of a transmitter to the set optimum optical signal level. Accordingly, an appropriate power level can be selected depending on an optical distribution network (ODN) structure to drive the transmitter. Also, when the entire optical network units are deactivated, a laser of the transmitter is turned off to thereby minimize unnecessary power consumption at the OLT.

摘要翻译： 提供了一种用于无源光网络（PON）的光线路终端（OLT）的自动光功率控制方法。 自动光功率控制方法包括在OLT处，在OLT处测量允许PON上的正常网络操作的光功率的允许范围，在所测量的光功率允许范围内设置最佳光信号电平，并且在 OLT将发射机的功率电平调整到设定的最佳光信号电平。 因此，可以根据用于驱动发射机的光分配网络（ODN）结构来选择适当的功率电平。 此外，当整个光网络单元被去激活时，发射机的激光被关闭，从而最小化OLT处的不必要的功率消耗。

公开(公告)号：US08114987B2

公开(公告)日：2012-02-14

申请号：US12312889

申请日：2007-10-24

申请人： Kyung-Il Kim ,  Seung-Bum Ha ,  Jae-Hoon Jeon ,  Soon-Jeong Kwon ,  Yong-Tae Kim ,  Ji-Suk Yun

发明人： Kyung-Il Kim ,  Seung-Bum Ha ,  Jae-Hoon Jeon ,  Soon-Jeong Kwon ,  Yong-Tae Kim ,  Ji-Suk Yun

IPC分类号： C07H15/00 ,  C07H17/00 ,  C07H1/00 ,  C07H3/00 ,  C07G3/00 ,  C08B37/00

CPC分类号： C07H3/02

摘要： A method of preparing 2-deoxy-L-ribose represented by the following formula I is disclosed. The preparation method includes the steps of: treating L-arabinose with an alcohol solvent in the presence of an acid to prepare 1-alkoxy-L-arabinopyranose; allowing the prepared 1-alkoxy-L-arabinopyranose to react with acyl chloride so as to prepare 1-alkoxy-2,3,4-triacyl-L-arabinopyranose; brominating the alkoxy group of the prepared 1-alkoxy-2,3,4-triacyl-L-arabinopyranose to prepare a 1-bromo-2,3,4-triacyl compound; allowing the prepared compound to react with zinc in the presence of ethyl acetate and an organic base so as to prepare glycal; treating the glycal with an alcohol solvent in the presence of an acid to prepare 1-alkoxy-2-deoxy-3,4-diacyl-L-ribopyranose; treating the prepared 1-alkoxy-2-deoxy-3,4-diacyl-L-ribopyranose with a base to prepare 1-alkoxy-2-deoxy-L-ribopyranose; and hydrolyzing the prepared 1-alkoxy-2-deoxy-L-ribopyranose in the presence of an acid catalyst.

摘要翻译： 公开了制备由下式I表示的2-脱氧-L-核糖的方法。 该制备方法包括以下步骤：在酸存在下用醇溶剂处理L-阿拉伯糖以制备1-烷氧基-L-阿拉伯吡喃糖; 使制备的1-烷氧基-L-阿拉伯吡喃与酰氯反应，制得1-烷氧基-2,3,4-三酰基-L-阿拉伯吡喃糖; 溴化制备的1-烷氧基-2,3,4-三酰基-L-阿拉伯吡喃糖的烷氧基以制备1-溴-2,3,4-三酰基化合物; 使得制备的化合物在乙酸乙酯和有机碱的存在下与锌反应，以制备甘氨酸; 在酸的存在下用醇溶剂处理甘氨酸以制备1-烷氧基-2-脱氧-3,4-二酰基-L-吡喃糖; 用碱处理制备的1-烷氧基-2-脱氧-3,4-二酰基-L-吡喃糖，制备1-烷氧基-2-脱氧-L-吡喃糖; 并在酸催化剂存在下水解制备的1-烷氧基-2-脱氧-L-吡喃糖。

公开(公告)号：US20110316092A1

公开(公告)日：2011-12-29

申请号：US13050241

申请日：2011-03-17

申请人： Seung-Jin Yang ,  Yong-Tae Kim ,  Hyuck-Soo Yang ,  Jung-Ho Moon

发明人： Seung-Jin Yang ,  Yong-Tae Kim ,  Hyuck-Soo Yang ,  Jung-Ho Moon

IPC分类号： H01L27/112

CPC分类号： H01L27/0203 ,  H01L27/112 ,  H01L27/11253

摘要： A mask read-only memory (ROM) includes parallel doping lines of a second conductivity type formed in a substrate of a first conductivity type, a first insulation film formed on the doping lines and the substrate, conductive pads fainted on the first insulation film, a second insulation film formed on the first insulation film and the conductive pads, parallel wires formed on the second insulation film extending perpendicular to the doping lines, contact plugs formed in the first insulation film that connect the doping lines to the conductive pads, and vias formed in the second insulation film that connect the conductive pads to the wires, wherein crossings of the doping lines and the wires define memory cells, contact plugs and vias are formed in memory cells of a first type, and at least one of the contact plug and via are missing from memory cells of a second type.

摘要翻译： 掩模只读存储器（ROM）包括形成在第一导电类型的衬底中的第二导电类型的并行掺杂线，形成在掺杂线和衬底上的第一绝缘膜，位于第一绝缘膜上的导电焊盘， 形成在所述第一绝缘膜和所述导电焊盘上的第二绝缘膜，形成在垂直于所述掺杂线延伸的所述第二绝缘膜上的平行布线，形成在将所述掺杂线连接到所述导电焊盘的所述第一绝缘膜中的接触插塞，以及通孔 形成在所述第二绝缘膜中，所述第二绝缘膜将所述导电焊盘连接到所述导线，其中所述掺杂线和所述布线的交叉限定存储器单元，接触插塞和通孔形成在第一类型的存储器单元中，并且所述接触插塞 并且第二类型的存储器单元中缺少通孔。