Method and apparatus for semiconductor wafer cleaning using high-frequency acoustic energy with supercritical fluid
    71.
    发明授权
    Method and apparatus for semiconductor wafer cleaning using high-frequency acoustic energy with supercritical fluid 有权
    用超临界流体使用高频声能的半导体晶片清洗方法和装置

    公开(公告)号:US07604011B2

    公开(公告)日:2009-10-20

    申请号:US11670631

    申请日:2007-02-02

    IPC分类号: B08B3/12 B08B7/02

    摘要: An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.

    摘要翻译: 提供了一种使用高频声能与超临界流体来执行半导体晶片(“晶片”)清洁工艺的装置和方法。 高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。 通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。 此外,晶片清洗过程受益于近零表面张力,高扩散性,高密度和化学混合能力的超临界流体性质。

    Multi-menisci processing apparatus
    72.
    发明授权
    Multi-menisci processing apparatus 失效
    多功能加工设备

    公开(公告)号:US07464719B2

    公开(公告)日:2008-12-16

    申请号:US11437891

    申请日:2006-05-18

    IPC分类号: B08B3/00 B08B7/04

    摘要: A substrate preparation apparatus is provided. The apparatus includes a housing configured to be installed in a substrate fabrication facility. The housing includes a manifold for use in preparing a wafer surface. The manifold is configured to include a first process window in a first portion of the manifold. A first fluid meniscus is capable of being defined within the first process windowl. Further included is a second process window in a second portion of the manifold. A second fluid meniscus is capable of being defined within the second process window. An arm is integrated with the housing, and the arm is coupled to the manifold, such that the arm is capable of positioning the manifold in proximity with the substrate during operation. The apparatus therefore provides for the formation of multi-menisci over the surface of a substrate using a single manifold.

    摘要翻译: 提供了基板制备装置。 该装置包括构造成安装在基板制造设备中的壳体。 壳体包括用于制备晶片表面的歧管。 歧管被配置为在歧管的第一部分中包括第一过程窗口。 第一流体弯液面能够在第一过程窗口内被定义。 还包括在歧管的第二部分中的第二处理窗口。 能够在第二过程窗口内限定第二流体弯月面。 臂与壳体一体化,并且臂联接到歧管,使得臂在操作期间能够将歧管定位在基板附近。 因此,该装置提供了使用单个歧管在基板的表面上形成多重半月板。

    METHOD AND APPARATUS FOR TRANSPORTING A SUBSTRATE USING NON-NEWTONIAN FLUID
    73.
    发明申请
    METHOD AND APPARATUS FOR TRANSPORTING A SUBSTRATE USING NON-NEWTONIAN FLUID 失效
    使用非牛顿流体运输基质的方法和装置

    公开(公告)号:US20080267721A1

    公开(公告)日:2008-10-30

    申请号:US12173661

    申请日:2008-07-15

    IPC分类号: B65G51/01

    CPC分类号: H01L21/67784 H01L21/67057

    摘要: A method for transporting a substrate is provided. In this method, a non-Newtonian fluid is provided and the substrate is suspended in the non-Newtonian fluid. The non-Newtonian fluid is capable of supporting the substrate. Thereafter, a supply force is applied on the non-Newtonian fluid to cause the non-Newtonian fluid to flow, whereby the flow is capable of moving the substrate along a direction of the flow. Apparatuses and systems for transporting the substrate using the non-Newtonian fluid also are described.

    摘要翻译: 提供了一种输送基板的方法。 在该方法中,提供了非牛顿流体,并将基底悬挂在非牛顿流体中。 非牛顿流体能够支撑基底。 此后,向非牛顿流体施加供应力以使非牛顿流体流动,由此流动能够沿着流动方向移动基底。 还描述了使用非牛顿流体输送基底的装置和系统。

    Method and apparatus for material deposition in semiconductor fabrication
    74.
    发明授权
    Method and apparatus for material deposition in semiconductor fabrication 有权
    在半导体制造中材料沉积的方法和装置

    公开(公告)号:US07358186B2

    公开(公告)日:2008-04-15

    申请号:US10735216

    申请日:2003-12-12

    IPC分类号: H01L21/44 B05C5/12

    摘要: Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

    摘要翻译: 概括地说,提供了一种在半导体晶片(“晶片”)上沉积材料的方法和装置。 更具体地,该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此,通过化学镀反应将材料沉积在晶片表面上,该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

    Method and apparatus for semiconductor wafer cleaning using high-frequency acoustic energy with supercritical fluid
    76.
    发明授权
    Method and apparatus for semiconductor wafer cleaning using high-frequency acoustic energy with supercritical fluid 有权
    用超临界流体使用高频声能的半导体晶片清洗方法和装置

    公开(公告)号:US07191787B1

    公开(公告)日:2007-03-20

    申请号:US10357664

    申请日:2003-02-03

    IPC分类号: B06B3/12

    摘要: An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.

    摘要翻译: 提供了一种使用高频声能与超临界流体来执行半导体晶片(“晶片”)清洁工艺的装置和方法。 高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。 通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。 此外,晶片清洗过程受益于近零表面张力,高扩散性,高密度和化学混合能力的超临界流体性质。

    Compliant wafer chuck
    77.
    发明授权
    Compliant wafer chuck 失效
    符合晶圆卡盘

    公开(公告)号:US07108591B1

    公开(公告)日:2006-09-19

    申请号:US10816418

    申请日:2004-03-31

    IPC分类号: B24B5/02 B24B7/04 B24B1/00

    CPC分类号: B24B37/30

    摘要: A semiconductor substrate support is provided. The semiconductor substrate support includes a chuck configured to change between a compliant state and a rigid state. An electromagnetic field source configured to apply an electromagnetic field to the chuck is included. The electromagnetic field causes the chuck to change from the compliant state to the rigid state. A method for supporting a semiconductor substrate and a system for cleaning a substrate and an apparatus are also provided.

    摘要翻译: 提供半导体衬底支撑。 半导体衬底支撑件包括构造成在柔顺状态和刚性状态之间变化的卡盘。 包括被配置为向卡盘施加电磁场的电磁场源。 电磁场使卡盘从顺从状态转变为刚性状态。 还提供了一种用于支撑半导体衬底的方法和用于清洁衬底和装置的系统。

    Chemical mechanical polishing of a metal layer with polishing rate monitoring
    78.
    发明授权
    Chemical mechanical polishing of a metal layer with polishing rate monitoring 有权
    用抛光速率监测金属层的化学机械抛光

    公开(公告)号:US06869332B2

    公开(公告)日:2005-03-22

    申请号:US10412038

    申请日:2003-04-10

    摘要: A method of chemical mechanical polishing a metal layer on a substrate in which the substrate is polished at a first polishing rate. Polishing is monitored with an eddy current monitoring system, and the polishing rate is reduced to a second polishing rate when the eddy current monitoring system indicates that a predetermined thickness of the metal layer remains on the substrate. Then polishing is monitored with an optical monitoring system, and polishing is halted when the optical monitoring system indicates that an underlying layer is at least partially exposed.

    摘要翻译: 在基板上以第一抛光速率抛光基板的化学机械抛光金属层的方法。 用涡流监测系统监测抛光,当涡流监测系统指示金属层的预定厚度保留在基板上时,抛光速率降低到第二抛光速率。 然后用光学监测系统监测抛光,并且当光学监测系统指示底层至少部分暴露时,停止抛光。

    CMP platen with patterned surface
    80.
    发明授权
    CMP platen with patterned surface 有权
    带有图案表面的CMP压板

    公开(公告)号:US06592438B2

    公开(公告)日:2003-07-15

    申请号:US09759556

    申请日:2001-01-12

    IPC分类号: B24B700

    摘要: A chemical mechanical polishing system is provided having one more polishing stations. The polishing stations include a platen and pad mounted to an upper surface of the platen. The upper surface of the platen is patterned to define a raised area and a recessed area. The raised area provides a rigid mounting surface for the pad and the recessed area provides the pad a desired degree of flexibility and compliance of the pad when brought into contact with a substrate.

    摘要翻译: 提供了具有一个以上抛光站的化学机械抛光系统。 抛光站包括安装到压板上表面的压板和衬垫。 将压板的上表面图案化以限定凸起区域和凹陷区域。 凸起区域为衬垫提供刚性的安装表面,并且凹陷区域在衬垫与衬底接触时向衬垫提供期望程度的柔性和顺应性。